101 resultados para Spectrum Analysis, Raman
Resumo:
Raman scattering measurements have been performed in diluted magnetic semiconductor Ga1-xMnxAs prepared by Mn-ion implantation, deposition, and post-annealing technique. It is found that the Raman spectrum measured from the implanted surface of the sample shows some new weak modes in addition to the GaAs-like modes which are observed from the unimplanted surface. The new vibrational modes observed are assigned to MnAs-like modes. The coupled LO-phonon plasmon mode, and Mn and As related vibrational modes caused by Mn-ion implantation, deposition, and post-annealing are also observed. Furthermore, the GaAs-like modes are found to be shifted by approximately 4 cm(-1) in the lower frequency side, compared with those observed from the unimplanted surface.
Resumo:
This paper describes the design and fabrication process of a two-dimensional GaAs-based photonic crystal nanocavity and analyzes the optical characterization of cavity modes at room temperature. Single InAs/InGaAs quantum dots (QDs) layer was embedded in a GaAs waveguide layer grown on an Al0.7Ga0.3As layer and GaAs substrate. The patterning of the structure and the membrane release were achieved by using electron-beam lithography, reaction ion etching, inductively coupled plasma etching and selective wet etching. The micro-luminescence spectrum is recorded from the fabricated nanocavities, and it is found that some high-order cavity modes are clearly observed besides the lowest-order resonant mode is exhibited in spite of much high rate of nonradiative recombination. The variance of resonant modes is also discussed as a function of r/a ratio and will be used in techniques aimed to improve the probability of achieving spectral coupling of a single QD to a cavity mode.
Resumo:
Experimental investigations of nondegenerate ultrabroadband chirped pulse optical parametric amplification have been carried out. The general mathematical expressions for evaluating parametric bandwidth, gain and gain bandwidth for arbitrary three-wave mixing parametric amplifiers are presented. In our experiments, a type-I noncollinear phase-matched optical parametric amplifier based on lithium triborate, which was pumped by a 5-ns second harmonic pulses from a Q-switched Nd:YAG operating at 10 Hz, seeded by a 14-fs Ti:sapphire laser at 800 nm, was presented. The 0.85 nJ energy of input chirped signal pulse with 57-FWHM has been amplified to 3.1 muJ at pump intensity 3 GW/cm(2), the corresponding parametric gain reached 3.6 x 10(3), the 53 nm-FWHM gain spectrum bandwidth of output signal has been obtained. The large gain and broad gain bandwidth, which have been confirmed experimentally, provide great potentials to amplify efficiently the broad bandwidth femtosecond light pulses to generate new extremes in power, intensity, and pulse duration using optical parametric chirped pulse amplifiers pumped by powerful nanosecond systems.
Resumo:
An automatic step adjustment (ASA) method for average power analysis (APA) technique used in fiber amplifiers is proposed in this paper for the first time. In comparison with the traditional APA technique, the proposed method has suggested two unique merits such as a higher order accuracy and an ASA mechanism, so that it can significantly shorten the computing time and improve the solution accuracy. A test example demonstrates that, by comparing to the APA technique, the proposed method increases the computing speed by more than a hundredfold under the same errors. By computing the model equations of erbium-doped fiber amplifiers, the numerical results show that our method can improve the solution accuracy by over two orders of magnitude at the same amplifying section number. The proposed method has the capacity to rapidly and effectively compute the model equations of fiber Raman amplifiers and semiconductor lasers. (c) 2006 Optical Society of America
Resumo:
A novel Nd3+-doped lead fluorosilicate glass (NPS glass) is prepared by a two-step melting process. Based on the absorption spectrum a Judd-Ofelt theory analysis is made. The emission line width of NPS glass is 44.2nm. The fluorescence decay lifetime of the 4F3/2 level is 586±20μsec, and the stimulated emission cross-section is 0.87×10-20cm2 at 1056nm. A laser oscillation is occurred at 1062nm when pumped by 808nm Diode Laser. The slope efficiency is 23.7% with a 415mJ threshold. It is supposed that NPS glass is a good candidate for using in ultra-short pulse generation and amplification by the broad emission bandwidth and long fluorescence lifetime.
Resumo:
Recently, we reported successful growth of high-quality GaAs/Si epilayers by using a very thin amorphous Si film as buffer layer. In this paper, the impurity properties of this kind of GaAs/Si epilayers have been studied by using PL spectrum, SIMS and Hall measurement. Compared to a typical PL spectrum of the GaAs/Si epilayers grown by conventional two-step method, a new peak was observed in our PL spectrum at the energy of 1.462 eV, which is assigned to the band-to-silicon acceptor recombination. The SIMS analysis indicates that the silicon concentration in this kind of GaAs/Si epilayers is about 10(18) cm(-3). But its carrier concentration (about 4 x 10(17) cm(-3)) is lower than the silicon concentration. The lower carrier concentration in this kind of GaAs/Si epilayer can be interpreted both as the result of higher compensation and as the result of the formation of the donor-defect complex. We also found that the high-quality and low-Si-concentration GaAs/Si epilayers can be regrown by using this kind of GaAs/Si epilayer as substrate. The FWHM of the X-ray (004) rocking curve from this regrowth GaAs epilayer is 118 '', it is much less than that of the first growth GaAs epilayer (160 '') and other reports for the GaAs/Si epilayer grown by using conventional two-step method (similar to 200 '').
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A new method using an atomic-resonance filter and deconvolution techniques has been developed to acquire high-resolution spectra of atmospheric Rayleigh-Mie scattering. In the deconvolution process, the difficulty of the undetermined division 0/0 is overcome by a fitting method. Preliminary laboratory experimental results on 90-deg scattering show that with a signal-to-noise ratio of 20, the scattered Rayleigh-Mie spectrum may be retrieved in agreement with the theoretical analysis.
Resumo:
The results of second-order Raman-scattering experiments on n- and p-type 4H-SiC are presented,covering the acoustic and the optical overtone spectral regions.Some of the observed structures in the spectra are assigned to particular phonon branches and the points in the Brillouin zone from which the scattering originates.There exists a doublet at 626/636cm-1 with energy difference about 10cm-1 in both n- and p-type 4H-SiC,which is similar to the doublet structure with the same energy difference founded in hexagonal GaN,ZnO, and AlN.The cutoff frequency at 1926cm-1 of the second-order Raman is not the overtone of the A1(LO) peak of the n-type doping 4H-SiC,but that of the undoping one.The second-order Raman spectrum of 4H-SiC can hardly be affected by doping species or doping density.
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The theoretical analysis and experimental measurement on the angle dependence of quantum efficiency of GaAs based resonant cavity enhanced (RCE) photodetector is presented. By changing the angle of incoming light, about 40mn wavelength variation of peak quantum efficiency has been experimentally obtained. The peak quantum efficiency and optical bandwidth at different mode corresponding to different angle incidence have been characterized with different absorption dependence on wavelength. The convenient angle tuning of resonant mode will be helpful to relax the strict constraint of RCE photodetector to light source with narrow emission spectrum while especially applied in space optical detections and communications.
Resumo:
Raman scattering measurement has been used to study the residual strains in the thin 3C-SiC/Si(001) epilayers with a variation of film thickness from 0.1 to 1.2 mu m. which were prepared by chemical vapor deposition (CVD)growth. Two methods have been exploited to figure our the residual strains and the exact LO bands. The final analyzing results show that residual strains exist in the 3C-SiC epilayers. The average stress is 1.3010 GPa, and the relative change of the lattice constant is 1.36 parts per thousand. Our measurements also show that 3C-SiC phonons are detectable even for the samples with film thickness in the range of 0.1 to 0.2 mu m. (C) 2000 Published by Elsevier Science S.A. All rights reserved.
Resumo:
A three-dimensional linear instability analysis of thermocapillary convection in a fluid-porous double layer system, imposed by a horizontal temperature gradient, is performed. The basic motion of fluid is the surface-tension-driven return flow, and the movement of fluid in the porous layer is governed by Darcy's law. The slippery effect of velocity at the fluid-porous interface has been taken into account, and the influence of this velocity slippage on the instability characteristic of the system is emphasized. The new behavior of the thermocapillary convection instability has been found and discussed through the figures of the spectrum.
Resumo:
Irradiation efect in three carbon allotropes C60, diamond and highly oriented pyrolytic graphite (HOPG) induced by 170 keV B ions, mainly including the process of the damage creation, is investigated by means of Raman spectroscopy technique. The diferences on irradiation sensitivity and structural stability for C60, HOPG and diamond are compared. The analysis results indicate that C60 is the most sensitive for B ions irradiation,diamond is the second one and the structure of HOPG is the most stable under B ion irradiation. The damage cross sections ? of C60, diamond and HOPG deduced from the Raman spectra are 7.78×10−15 , 6.38×10−15 and1.31 × 10−15cm2, respectively.
Resumo:
The 4d photoabsorption spectra of I2+, I3+, and I4+ have been obtained in the 70-127 eV region with the dual laser-produced plasma technique at time delays ranging from 400 to 520 ns. With decreasing time delay, the dominant contribution to the spectra evolves from the I2+ to the I4+ ions, and each spectrum contains discrete 4d-nf transitions and a broad 4d-epsilon f shape resonance, which are identified with the aid of multiconfiguration Hartree-Fock calculations. The excited states decay by direct autoionization involving 5s or 5p electrons, and rates for the different processes and resulting linewidths were calculated. With increasing ionization, the 4d-epsilon f shape resonance become intense and broader in going from I2+ to I3+, and then vanishes at I5+. In addition, the discrete structure of the calculated spectrum of each ion gradually approaches the corresponding shape resonance position. Based on the assumption of a normalized Boltzmann distribution among the excited states and a steady-state collisional-radiative model, we reproduced spectra which are in good agreement with experiment.
Resumo:
Durango apatite was irradiated with energetic U ions of 2.64 GeV and Kr ions of 2.1 GeV, with and without simultaneous exposure to a pressure of 10.5 GPa. Analysis by confocal Raman spectroscopy gives evidence of vibrational changes being marginal for fluences below 5x10(11) ions/cm(2) but becoming dominant when increasing the fluence to 8x10(12) ions/cm(2). Samples irradiated with U ions experience severe strain resulting in crystal cracking and finally breakage at high fluences. These radiation effects are directly linked to the formation of amorphous tracks and the fraction of amorphized material increasing with fluence. Raman spectroscopy of pressurized irradiated samples shows small shifts of the band positions with decreasing pressure but without a significant change of the Gruneisen parameter. Compared to irradiations at ambient conditions, the Raman spectra of apatite irradiated at 10.5 GPa exhibit fewer modifications, suggesting a higher radiation stability of the lattice by the pressure applied.
Resumo:
The phase evolution of yttrium oxide and lanthanum oxide doped zirconia (Y2O3-ZrO2 and La2O3-ZrO2, respectively) from their tetragonal to monoclinic phase has been studied using UV Raman spectroscopy, visible Raman spectroscopy and XRD. UV Raman spectroscopy is found to be more sensitive at the surface region while visible Raman spectroscopy and XRD mainly give the bulk information. For Y2O3-ZrO2 and La2O3-ZrO2, the transformation of the bulk phase from the tetragonal to the monoclinic is significantly retarded by the presence of yttrium oxide and lanthanum oxide. However, the tetragonal phase in the surface region is difficult to stabilize, particularly when the stabilizer's content is low. The phase in the surface region can be more effectively stabilized by lanthanum oxide than yttrium oxide even though zirconia seemed to provide more enrichment in the surface region of the La2O3-ZrO2 sample than the Y2O3-ZrO2 sample, based on XPS analysis. The surface structural tension and the enrichment of the ZrO2, component in the surface region of ZrO2-Y2O3 and ZrO2-La2O3 might be the reasons for the striking difference between the phase change in the surface region and the bulk. Accordingly, the stabilized tetragonal surface region can significantly prevent the phase transition from developing into the bulk when the stabilizer's content is high.