A Novel Power Supply Solution of a Passive RFID Transponder

This paper presents a power supply solution for fully integrated passive radio-frequency identification(RFID) transponder IC,which has been implemented in 0.35μm CMOS technology with embedded EEPROM from Chartered Semiconductor.The proposed AC/DC and DC/DC charge pumps can generate stable output for RFID applications with quite low power dissipation and extremely high pumping efficiency.An analytical model of the voltage multiplier,comparison with other charge pumps,simulation results,and chip testing results are presented.

A Wide-Band High-Linearity Down-Conversion Mixer for Cable Receptions

We analyze a wide-band,high-linearity down-conversion mixer for cable receptions that is implemented in 0. 35μm SiGe BiCMOS technology. The bandwidth of the RF （radio frequency） input covers the range from 1 to 1.8GHz. The measured input power at the - 1dB compression point of the mixer reaches ＋ 14.23dBm. The highest voltage conversion gain is 8. 31dB, while the lowest noise figure is 19.4dB. The power consumed is 54mW with a 5V supply. The test result of the down-conversion mixer is outlined.

Monolithically Integrated Optoelectronic Receivers Implemented in 0. 25μm MS/RF CMOS

A monolithically integrated optoelectronic receiver is presented. A silicon-based photo-diode and receiver circuits are integrated on identical substrates in order to eliminate the parasitics induced by hybrid packaging. Implemented in the present deep sub-micron MS/RF （mixed signal, radio frequency） CMOS,this monolithically OEIC takes advantage of several new features to improve the performance of the photo-diode and eventually the whole OEIC.

High-mobility Ga-polarity GaN achieved by NH3-MBE

GaN epilayers were grown on (0001) sapphire substrates by NH3-MBE and RF-MBE (radio frequency plasma). The polarities of the epilayers were investigated by in-situ RHEED, chemical solution etching and AFM surface examination. By using a RF-MBE grown GaN layer as template to deposit GaN epilayer by NH3-MBE method, we found that not only Ga-polarity GaN films were repeatedly obtained, but also the electron mobility of these Ga-polarity films was significantly improved with a best value of 290 cm(2)/V.s at room temperature. Experimental results show it is an easy and stable way for growth of high quality Ga-polarity GaN films.

PERFORMANCE OF DOUBLE SIDEBAND MODULATED PROBE WAVE IN BOTDA DISTRIBUTED FIBER SENSOR

We report on the performance of double sideband (DSB) modulated probe wave in Brillouin optical time domain analysis (BOTDA) distributed fiber sensor. Compared to single sideband (SSB)modulation, along the sensing fiber the pump depletion of DSB modulation is remarkably suppressed in time domain and also has a relatively narrower Brillouin gain spectrum in frequency domain. Both the theoretical simulation and the experimental results demonstrate that the DSB modulation provides potentially longer sensing distance and higher accuracy in measurement than the SSB modulation in the BOTDA distributed fiber sensor system.

Distributed Temperature Sensing System Based on Rayleigh Scattering BOTDA

A distributed temperature sensor based on Rayleigh scattering Brillouin optical time domain analysis (Rayleigh-BOTDA) is proposed in this paper. The sensor uses Rayleigh backscattering effect of microwave modulated pulse base sidebands as probe wave and a high sensitive photon counting detector for Brillouin signal intensity detection. Compared with a conventional BOTDA system, the Rayleigh-BOTDA effectively suppresses polarization-induced signal fluctuation resulting in improved signal intensity. The experimental scheme presented is simplified by using a single laser with one-end access. The temperature accuracy of the new sensing system was demonstrated as 1 degrees C on spatial resolution of 3 m.

Modification of ZnO films under high energy Xe-ion irradiations

ZnO films were deposited on (100) Si substrate by radio frequency magnetron sputtering. These films were irradiated at room temperature with 308 MeV Xe-ions to a fluence of 1.0 x 10(12), 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2). Then the samples were investigated using RBS, XRD, FESEM and PL analyses. The obtained experimental results showed that the deposited ZnO films were highly c-axis orientated and of high purity, 308 MeV Xe-ion irradiations could not change the c-axis oriented. The topography and PL properties of the ZnO films varied with increasing the Xe-ion irradiation fluence. For 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2) irradiated samples, surface cracks were observed. Furthermore, it was found that the 1.0 x 10(14) Xe/cm(2) irradiated sample exhibiting the strongest PL ability. The modification of structure and PL properties induced by 308 MeV Xe-ion irradiations were briefly discussed. (C) 2008 Elsevier B.V. All rights reserved.

Beam dynamics design of an RFQ for a planned accelerator, which uses a direct plasma injection scheme

To meet the requirements of providing high-intensity heavy ion beams the direct plasma injection scheme (DPIS) was proposed by a RIKEN-CNS-TIT collaboration. In this scheme a radio frequency quadrupole (RFQ) was joined directly with the laser ion source (LIS) without a low-energy beam transport (LEBT) line. To find the best design of the RFQ that will have short length, high transmission efficiency and small emittance growth, beam dynamics designs with equipartitioning design strategy and with matched-only design strategy have been performed, and a comparison of their results has also been done. Impacts of the input beam parameters on transmission efficiency are presented, too. (C) 2008 Elsevier B.V. All rights reserved.

Structural and PL properties of Cu-doped ZnO films

Cu-doped ZnO films with hexagonal wurtzite structure were deposited on silicon (1 1 1) substrates by radio frequency (RF) sputtering technique. An ultraviolet (UV) peak at similar to 380nm and a blue band centered at similar to 430nm were observed in the room temperature photoluminescent (PL) spectra. The UV emission peak was from the exciton transition. The blue emission band was assigned to the Zn interstitial (Zn-i) and Zn vacancy (V-Zn) level transition. A strong blue peak (similar to 435 nm) was observed in the PL spectra when the alpha(Cu) (the area ratio of Cu-chips to the Zn target) was 1.5% at 100 W, and ZnO films had c-axis preferred orientation and smaller lattice mismatch. The influence of alpha(Cu) and the sputtering power on the blue band was investigated.

A Particle-in-cell scheme of the RFQ in the SSC-Linac

A 52 MHz Radio Frequency Quadrupole (RFQ) linear accelerator (linac) is designed to serve as an initial structure for the SSC-Linac system (injector into Separated Sector Cyclotron). The designed injection and output energy are 3.5 keV/u and 143 keV/u, respectively. The beam dynamics in this RFQ have been studied using a three-dimensional Particle-In-Cell (PIC) code BEAMPATH. Simulation results show that this R,FQ structure is characterized by stable values of beam transmission efficiency (at least 95%) for both zero-current mode and the space charge dominated regime. The beam accelerated in the RFQ has good quality in both transverse and longitudinal directions, and could easily be accepted by Drift Tube Linac (DTL). The effect of the vane error and that of the space charge on the beam parameters have been studied as well to define the engineering tolerance for RFQ vane machining and alignment.

Study on shunt impedance and voltage distribution of 4-rod RFQ cavity

A high current RFQ (radio frequency quadrupole) is being studied at the Institute of Modern Physics, CAS for the direct plasma injection scheme. Shunt impedance is air important parameter when designing a 4-rod RFQ cavity, it reflects the RF efficiency of the cavity, and has a direct influence on the cost of the structure. Voltage distribution of a RFQ cavity has an effect on beam transmission, and particles would be lost if the actual voltage distribution is not as what, it should be. The influence of cell length, stern thickness and height on Shunt impedance and voltage distribution have been studied, in particular the effect of projecting electrodes has been investigated in detail.

Drift distance survey in direct plasma injection scheme for high current beam production

In a laser ion source, plasma drift distance is one of the most important design parameters. Ion current density and beam pulse width are defined by plasma drift distance between a laser target and beam extraction position. In direct plasma injection scheme, which uses a laser ion source and a radio frequency quadrupole linac, we can apply relatively higher electric field at beam extraction due to the unique shape of a positively biased electrode. However, when we aim at very high current acceleration such as several tens of milliamperes, we observed mismatched beam extraction conditions. We tested three different ion current at ion extraction region by changing plasma drift distance to study better extraction condition. In this experiment, C6+ beam was accelerated. We confirmed that matching condition can be improved by controlling plasma drift distance.

The Compact Pulsed Hadron Source: A Design Perspective

During the past. decades, large-scale national neutron sources have been developed in Asia, Europe, and North America. Complementing such efforts, compact hadron beam complexes and neutron sources intended to serve primarily universities and industrial institutes have been proposed, and some have recently been established. Responding to the demand in China for pulsed neutron/proton-beam platforms that are dedicated to fundamental and applied research for users in multiple disciplines from materials characterization to hadron therapy and radiography to accelerator-driven sub-critical reactor systems (ADS) for nuclear waste transmutation, we have initiated the construction of a compact, yet expandable, accelerator complex-the Compact Pulsed Hadron Source (CPHS). It consists of an accelerator front-end (a high-intensity ion source, a 3-MeV radio-frequency quadrupole linac (RFQ), and a 13-MeV drift-tube linac (DTL)), a neutron target station (a beryllium target with solid methane and room-temperature water moderators/reflector), and experimental stations for neutron imaging/radiography, small-angle scattering, and proton irradiation. In the future, the CPHS may also serve as an injector to a ring for proton therapy and radiography or as the front end to an ADS test facility. In this paper, we describe the design of the CPHS technical systems and its intended operation.

CSRm高频系统控制器

HIRFL-CSR（Heavy Ion Research Facility at LanZhou-Cooling Storage Ring兰州重离子冷却储存环）是国家重大科学工程，其控制系统是一个庞大的系统，由许多分控制系统组成，高频系统是其重要组成部分之一。加速器的加速过程都是由高频系统来完成的。由于高频控制系统的控制对象就是高频腔体，控制系统的稳定性和输出频率的精确性将直接影响到加速器系统的正常工作，而对于高频系统的状态回读又直接决定了对于高频系统的远程监控能力，所以高频控制系统的设计非常重要。本设计基于现场可编程逻辑门阵列FPGA和数字信号专用处理器DSP搭建， 一方面可以完成从控制中心远程控制高频腔体，另一方面也可以完成对于当前状态的读取，所经过的通道也是多样化的，包括CPCI总线通信，CANBUS总线通信或者是485总线通信。本文的内容包括了1>对于高频控制系统控制对象的分析以及各种控制参数要求。2>组成此系统的硬件部分分析选择以及硬件系统的搭建过程。3>对FPGA和DSP进行程序设计的过程和方法。本文的价值不仅在于对高频系统的控制上，对于其他数据采集系统，远程控制系统以及总线通信和数据分析算法上也有着参考价值

SFC200KW高频发射机控制系统改造

本文全面论述了一个基于PROFIBUS现场的总线分布式控制系统的设计、开发、调试过程，详细介绍了控制系统的结构和软硬件设计。论文从SFC200KW高频发射机控制需求出发，阐明了控制系统的开发背景、基本结构的建立、硬件接口电路的设计方案、控制算法的设计思想以及上下位机控制程序的实现。论文分四大部分，首先介绍SFC200KW高频发射机控制系统的现状，阐明进行SFC200KW高频发射机控制系统改造的必要性和采用现场总线分布式控制系统的优势。第二部分介绍控制系统改造的相关技术。第三部分结合PROF工BUS和FCS控制系统理论详细介绍了新SFC200KW高频发射机控制系统的结构，包括主控器PLC实时控制、系统抗干扰特性、电平转换接口等。第四部分结合SFC200KW高频发射机控制算法，下位机PLC编程语言，介绍了控制系统软件的设计和开发。上位机监控程序采用W工NCC组态软件完成友好的人机交互界面开发。通过对该控制系统的改造，满足了工程对控制部分可靠性、实时性和稳定性的需求。实现了对SFC200KW高频发射机远程控制，运行参数实时采集，故障实时保护和报警记录，运行参数归档和打印等功能。达到了改造的目的。