A Wide-Band High-Linearity Down-Conversion Mixer for Cable Receptions

We analyze a wide-band,high-linearity down-conversion mixer for cable receptions that is implemented in 0. 35μm SiGe BiCMOS technology. The bandwidth of the RF （radio frequency） input covers the range from 1 to 1.8GHz. The measured input power at the - 1dB compression point of the mixer reaches ＋ 14.23dBm. The highest voltage conversion gain is 8. 31dB, while the lowest noise figure is 19.4dB. The power consumed is 54mW with a 5V supply. The test result of the down-conversion mixer is outlined.

Monolithically Integrated Optoelectronic Receivers Implemented in 0. 25μm MS/RF CMOS

A monolithically integrated optoelectronic receiver is presented. A silicon-based photo-diode and receiver circuits are integrated on identical substrates in order to eliminate the parasitics induced by hybrid packaging. Implemented in the present deep sub-micron MS/RF （mixed signal, radio frequency） CMOS,this monolithically OEIC takes advantage of several new features to improve the performance of the photo-diode and eventually the whole OEIC.

High-mobility Ga-polarity GaN achieved by NH3-MBE

GaN epilayers were grown on (0001) sapphire substrates by NH3-MBE and RF-MBE (radio frequency plasma). The polarities of the epilayers were investigated by in-situ RHEED, chemical solution etching and AFM surface examination. By using a RF-MBE grown GaN layer as template to deposit GaN epilayer by NH3-MBE method, we found that not only Ga-polarity GaN films were repeatedly obtained, but also the electron mobility of these Ga-polarity films was significantly improved with a best value of 290 cm(2)/V.s at room temperature. Experimental results show it is an easy and stable way for growth of high quality Ga-polarity GaN films.

Modification of ZnO films under high energy Xe-ion irradiations

ZnO films were deposited on (100) Si substrate by radio frequency magnetron sputtering. These films were irradiated at room temperature with 308 MeV Xe-ions to a fluence of 1.0 x 10(12), 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2). Then the samples were investigated using RBS, XRD, FESEM and PL analyses. The obtained experimental results showed that the deposited ZnO films were highly c-axis orientated and of high purity, 308 MeV Xe-ion irradiations could not change the c-axis oriented. The topography and PL properties of the ZnO films varied with increasing the Xe-ion irradiation fluence. For 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2) irradiated samples, surface cracks were observed. Furthermore, it was found that the 1.0 x 10(14) Xe/cm(2) irradiated sample exhibiting the strongest PL ability. The modification of structure and PL properties induced by 308 MeV Xe-ion irradiations were briefly discussed. (C) 2008 Elsevier B.V. All rights reserved.

Beam dynamics design of an RFQ for a planned accelerator, which uses a direct plasma injection scheme

To meet the requirements of providing high-intensity heavy ion beams the direct plasma injection scheme (DPIS) was proposed by a RIKEN-CNS-TIT collaboration. In this scheme a radio frequency quadrupole (RFQ) was joined directly with the laser ion source (LIS) without a low-energy beam transport (LEBT) line. To find the best design of the RFQ that will have short length, high transmission efficiency and small emittance growth, beam dynamics designs with equipartitioning design strategy and with matched-only design strategy have been performed, and a comparison of their results has also been done. Impacts of the input beam parameters on transmission efficiency are presented, too. (C) 2008 Elsevier B.V. All rights reserved.

Structural and PL properties of Cu-doped ZnO films

Cu-doped ZnO films with hexagonal wurtzite structure were deposited on silicon (1 1 1) substrates by radio frequency (RF) sputtering technique. An ultraviolet (UV) peak at similar to 380nm and a blue band centered at similar to 430nm were observed in the room temperature photoluminescent (PL) spectra. The UV emission peak was from the exciton transition. The blue emission band was assigned to the Zn interstitial (Zn-i) and Zn vacancy (V-Zn) level transition. A strong blue peak (similar to 435 nm) was observed in the PL spectra when the alpha(Cu) (the area ratio of Cu-chips to the Zn target) was 1.5% at 100 W, and ZnO films had c-axis preferred orientation and smaller lattice mismatch. The influence of alpha(Cu) and the sputtering power on the blue band was investigated.

A Particle-in-cell scheme of the RFQ in the SSC-Linac

A 52 MHz Radio Frequency Quadrupole (RFQ) linear accelerator (linac) is designed to serve as an initial structure for the SSC-Linac system (injector into Separated Sector Cyclotron). The designed injection and output energy are 3.5 keV/u and 143 keV/u, respectively. The beam dynamics in this RFQ have been studied using a three-dimensional Particle-In-Cell (PIC) code BEAMPATH. Simulation results show that this R,FQ structure is characterized by stable values of beam transmission efficiency (at least 95%) for both zero-current mode and the space charge dominated regime. The beam accelerated in the RFQ has good quality in both transverse and longitudinal directions, and could easily be accepted by Drift Tube Linac (DTL). The effect of the vane error and that of the space charge on the beam parameters have been studied as well to define the engineering tolerance for RFQ vane machining and alignment.

Study on shunt impedance and voltage distribution of 4-rod RFQ cavity

A high current RFQ (radio frequency quadrupole) is being studied at the Institute of Modern Physics, CAS for the direct plasma injection scheme. Shunt impedance is air important parameter when designing a 4-rod RFQ cavity, it reflects the RF efficiency of the cavity, and has a direct influence on the cost of the structure. Voltage distribution of a RFQ cavity has an effect on beam transmission, and particles would be lost if the actual voltage distribution is not as what, it should be. The influence of cell length, stern thickness and height on Shunt impedance and voltage distribution have been studied, in particular the effect of projecting electrodes has been investigated in detail.

Drift distance survey in direct plasma injection scheme for high current beam production

In a laser ion source, plasma drift distance is one of the most important design parameters. Ion current density and beam pulse width are defined by plasma drift distance between a laser target and beam extraction position. In direct plasma injection scheme, which uses a laser ion source and a radio frequency quadrupole linac, we can apply relatively higher electric field at beam extraction due to the unique shape of a positively biased electrode. However, when we aim at very high current acceleration such as several tens of milliamperes, we observed mismatched beam extraction conditions. We tested three different ion current at ion extraction region by changing plasma drift distance to study better extraction condition. In this experiment, C6+ beam was accelerated. We confirmed that matching condition can be improved by controlling plasma drift distance.

The Compact Pulsed Hadron Source: A Design Perspective

During the past. decades, large-scale national neutron sources have been developed in Asia, Europe, and North America. Complementing such efforts, compact hadron beam complexes and neutron sources intended to serve primarily universities and industrial institutes have been proposed, and some have recently been established. Responding to the demand in China for pulsed neutron/proton-beam platforms that are dedicated to fundamental and applied research for users in multiple disciplines from materials characterization to hadron therapy and radiography to accelerator-driven sub-critical reactor systems (ADS) for nuclear waste transmutation, we have initiated the construction of a compact, yet expandable, accelerator complex-the Compact Pulsed Hadron Source (CPHS). It consists of an accelerator front-end (a high-intensity ion source, a 3-MeV radio-frequency quadrupole linac (RFQ), and a 13-MeV drift-tube linac (DTL)), a neutron target station (a beryllium target with solid methane and room-temperature water moderators/reflector), and experimental stations for neutron imaging/radiography, small-angle scattering, and proton irradiation. In the future, the CPHS may also serve as an injector to a ring for proton therapy and radiography or as the front end to an ADS test facility. In this paper, we describe the design of the CPHS technical systems and its intended operation.

CSRm高频系统控制器

HIRFL-CSR（Heavy Ion Research Facility at LanZhou-Cooling Storage Ring兰州重离子冷却储存环）是国家重大科学工程，其控制系统是一个庞大的系统，由许多分控制系统组成，高频系统是其重要组成部分之一。加速器的加速过程都是由高频系统来完成的。由于高频控制系统的控制对象就是高频腔体，控制系统的稳定性和输出频率的精确性将直接影响到加速器系统的正常工作，而对于高频系统的状态回读又直接决定了对于高频系统的远程监控能力，所以高频控制系统的设计非常重要。本设计基于现场可编程逻辑门阵列FPGA和数字信号专用处理器DSP搭建， 一方面可以完成从控制中心远程控制高频腔体，另一方面也可以完成对于当前状态的读取，所经过的通道也是多样化的，包括CPCI总线通信，CANBUS总线通信或者是485总线通信。本文的内容包括了1>对于高频控制系统控制对象的分析以及各种控制参数要求。2>组成此系统的硬件部分分析选择以及硬件系统的搭建过程。3>对FPGA和DSP进行程序设计的过程和方法。本文的价值不仅在于对高频系统的控制上，对于其他数据采集系统，远程控制系统以及总线通信和数据分析算法上也有着参考价值

SFC200KW高频发射机控制系统改造

本文全面论述了一个基于PROFIBUS现场的总线分布式控制系统的设计、开发、调试过程，详细介绍了控制系统的结构和软硬件设计。论文从SFC200KW高频发射机控制需求出发，阐明了控制系统的开发背景、基本结构的建立、硬件接口电路的设计方案、控制算法的设计思想以及上下位机控制程序的实现。论文分四大部分，首先介绍SFC200KW高频发射机控制系统的现状，阐明进行SFC200KW高频发射机控制系统改造的必要性和采用现场总线分布式控制系统的优势。第二部分介绍控制系统改造的相关技术。第三部分结合PROF工BUS和FCS控制系统理论详细介绍了新SFC200KW高频发射机控制系统的结构，包括主控器PLC实时控制、系统抗干扰特性、电平转换接口等。第四部分结合SFC200KW高频发射机控制算法，下位机PLC编程语言，介绍了控制系统软件的设计和开发。上位机监控程序采用W工NCC组态软件完成友好的人机交互界面开发。通过对该控制系统的改造，满足了工程对控制部分可靠性、实时性和稳定性的需求。实现了对SFC200KW高频发射机远程控制，运行参数实时采集，故障实时保护和报警记录，运行参数归档和打印等功能。达到了改造的目的。

CSR数字射频系统的同步算法研究与应用

本文要解决CSR控制系统中扮制信号同步传送问题。HIRFL_CSR(Heavy Ion Research Facility at LanKZhou-Cooling StorageRing兰州重离子冷却储存环）是国家九八爪大科学工程之一，它的控制是一个非常庞大而复杂的系统，它由多个子系统构成，各个子系统之间的协调同步是HIRFL-CSR运行的关键，也是HIRFL-CSR从控制系统的核心问题之一。。CSR工程的同步系统包括环内各设备之间的同步，环与门前端务器的同步等等。同步系统的实现应该在保证协调同步的雄础上，还要保证整个控制系统的稳定性，实时性，准确性和抗干扰性。本文的披个解决方案是建立在直按序列扩频通信技术上的。扩频通信系统可以增强控制信一号的抗干扰性，完成f言号的可靠传输。在信号发送端，进行恭带信号的载波调制，然后经过pN码的扩频调制，进入信道传输；在接收端，先进行四码的解扩一，然后进行载波信号的解调，还原为发送端的信号。在整个过程中保证CSI又控制信号的同步，包括载波同步，位同步和群同步。本文主要工作和研究内容是CSR系统中的载波同步传输算法的不开究，设计和实现。主要工作包括（1）不叶究控制洁号在通信算法中的性能，在算法分析的基础上，使用MATLAB实现模拟控制信号通信过程，同时进行传送信号分析和噪声功率分析，测试可行性:(2)在仿真可行的情况下，把整个通信过程全部或者部分写为可以执行的C或者汇编代码，在TMS323C6711DSK板进行程序调试；（3）把可执；行的释序下我到以TrAG为接口白如醚件协尔32C6713DSP模块，实现在CSR系统中控制信号的传送。本文目的是解决控制信号的同步通愉问题，对于该问题的传输分析和同步实现以及提出的下一步研究，在C双控制I具有很重要的意义，同时也对于类似问题的解决有重要价值。

A plasma sputtering decoration route to producing thickness-tunable ZnO/TiO2 core/shell nanorod arrays

We report a radio frequency magnetron sputtering method for producing TiO2 shell coatings directly on the surface of ZnO nanorod arrays. ZnO nanorod arrays were firstly fabricated on transparent conducting oxide substrates by a hydrothermal route, and subsequently decorated with TiO2 by a plasma sputtering deposition process. The core/shell nanorods have single-crystal ZnO cores and anatase TiO2 shells. The shells are homogeneously coated onto the whole ZnO nanorods without thickness change. This approach enables us to tailor the thickness of the TiO2 shell for desired photovoltaic applications on a one-nanometer scale. The function of the TiO2 shell as a blocking layer for increasing charge separation and suppression of the surface recombination was tested in dye-sensitized solar cells. The enhanced photocurrent and open-circuit voltage gave rise to increased photovoltaic efficiency and decreased dark current, indicating successful functioning of the TiO2 shell.

The effects of shell characteristics on the current-voltage behaviors of dye-sensitized solar cells based on ZnO/TiO2 core/shell arrays

The ZnO/TiO2 core/shell structure was formed through deposition of a TiO2 coating layer on the hydrothermally fabricated ZnO nanorod arrays through radio frequency magnetron sputtering. The effects of the TiO2 shell's characteristics on the current-voltage behaviors of the core/shell-based dye-sensitized solar cells (CS-DSSC) were investigated. As the rates of injection, transfer, and recombination of electrons of such CS-DSSC were affected significantly by the crystallization, morphology, and continuity of the TiO2 shells, the photovoltaic efficiency was accordingly varied remarkably. In addition, the efficiency was further improved by enhancing the surface area in the core/shell electrode.