185 resultados para Quartz tungsten halogen


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The fluid flow associated with micro and meso scale devices is currently of interest. Experiments were performed to study the fluid flow in meso-scale channels. A straight flow tube was fabricated with 1.0x4.0mm^2 in rectangular cross section and 200mm in length, which was made of quartz for flow visualization and PIV measurements. Reynolds numbers were ranged from 311 to over 3105. The corresponding pressure drop was from 0.65KPa to over 16.58KPa between the inlet and outlet of the tube. The micro PIV was developed to measure the velocity distribution in the tube. A set of microscope object lens was mounted ahead of CCD camera to obtain optimized optical magnification on the CCD chip. The velocity distributions near the outlet of the tube were measured to obtain full-developed flow. A CW laser beam was focused directly on the test section by a cylinder lens to form a small light sheet. Thus, high power density of light was formed on the view region. It is very important to the experiment while the velocity of the flow reaches to a few meters per second within millimeter scale. In this case, it is necessary to reduce exposure time to microseconds for PIV measurements. In the present paper, the experimental results are compared with the classical theories.

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Thickness and component distributions of large-area thin films are an issue of international concern in the field of material processing. The present work employs experiments and direct simulation Monte Carlo (DSMC) method to investigate three-dimensional low-density, non-equilibrium jets of yttrium and titanium vapor atoms in an electron-beams physical vapor deposition (EBPVD) system furnished with two or three electron-beams, and obtains their deposition thickness and component distributions onto 4-inch and 6-inch mono-crystal silicon wafers. The DSMC results are found in excellent agreement with our measurements, such as evaporation rates of yttrium and titanium measured in-situ by quartz crystal resonators, deposited film thickness distribution measured by Rutherford backscattering spectrometer (RBS) and surface profilometer and deposited film molar ratio distribution measured by RBS and inductively coupled plasma atomic emission spectrometer (ICP-AES). This can be taken as an indication that a combination of DSMC method with elaborate measurements may be satisfactory for predicting and designing accurately the transport process of EBPVD at the atomic level.

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Porous Zr-based bulk metallic glass (PMG) with unidirectional opening pores is prepared by electrochemical etching of tungsten wires of the W/bulk metallic glass (BMG) composites. The porosity and pore size can be controlled by adjusting the tungsten wires. The PMG showed no measurable loss in thermal stability as compared to the monolithic Zr-based BMG by water quenching and is more ductile and softer than the pore-free counterpart. The specific surface area of the PMGs is calculated to be 0.65, 3.96, and 10.54 m(2)/kg for 20, 60, and 80 vol % porosity, respectively. (c) 2007 The Electrochemical Society.

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There are very strong interests in improving the high-temperature wear resistance of the y-TiAl intermetallic alloy, especially when applied as tribological moving components. In this paper, microstructure, high-temperature dry sliding wear at 600 degrees C and isothermal oxidation at 1000 degrees C on ambient air of laser clad gamma/W2C/TiC composite coatings with different constitution of Ni-Cr-W-C precursor mixed powders on TiAl alloy substrates have been investigated. The results show that microstructure of the laser fabricated composite coatings possess non-equilibrium microstructure consisting of the matrix of nickel-base solid solution gamma-NiCrAl and reinforcements of TiC, W2C and M23C6 carbides. Higher wear resistance than the original TiAl alloy is achieved in the composite coatings under high-temperature wear test conditions. However, the oxidation resistance of the laser clad gamma/W2C/TiC composite coatings is deceased. The corresponding mechanisms resulting in the above behaviors of the laser clad composite coatings are discussed. (c) 2006 Elsevier B.V. All rights reserved.

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通过对钨球垂直撞击钢靶的数值仿真,获得了模拟钨球撞击钢板的整个物理图象,并给出了多种人们所关心的侵彻过程和物理场的演化数据,仿真结果与试验数据有较好的一致性。

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The influence of water on the brittle behavior of beta-cristobalite is studied by means of molecular dynamics (MD) simulation With the TTAM potential. Crack extension of mode 1 type is observed as the crack opening is filled LIP With water. The critical stress intensity factor K-lc(MD) is used to characterize the crack extension of MD simulation. The surface energy of SiO2 covered with layers of water is calculated at temperature of 300 K. Based oil the Griffith fracture criterion, the critical stress intensity factor K-lc(Griffith) is calculated, and it is in good agreement with that of MD simulation. (C) 2008 Elsevier B.V. All rights reserved.

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提出了一种用于再生放大器中展宽光谱的双折射片的设计方法,利用这种方法设计了厚度为761微米的石英双折射片,并将其插入钛宝石再生放大器中,有效抑制了增益窄化效应,实验的结果和理论计算一致。使用设计的石英双折射片后光谱带宽由使用前的28nm展宽到了62nm,最后压缩脉冲为23fs。

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根据石英晶体双折射率的色散特性,对石英波片的偏光干涉谱进行了理论分析和数值模拟,提出了一种石英波片延迟量和厚度的偏光干涉标定法。即由偏光干涉谱,可以得出石英波片在200~2000 nm宽光谱范围内的延迟量;通过对长波段的偏光干涉谱极值波长的精确判断,可以准确地计算出该石英波片的厚度。利用Lambda 900 紫外可见近红外分光光度计对一片石英波片的偏光干涉谱进行了测量。在波长精度为0.1 nm的情况下,测量的厚度精度为0.1 μm。误差分析结果表明,通过提高光谱的最小分辨力及选择较长的光谱波段进行测量计算

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提出一种精确测量波片相位延迟的方法。将待测波片置于起偏器和检偏器之间,转动待测波片和检偏器至不同的位置并探测输出的光强,得到波片的相位延迟。采用光源调制技术和解调技术,抑制了连续光所无法克服的背景光干扰和电子噪声的干扰;将光路分为测量光路和参考光路,采用软件除法技术,消除了光源波动的影响,从而实现波片相位延迟的精确测量。详细分析了影响测量精度的误差因素,主要有光源波长变化、温度变化、入射角倾斜、转台转角误差和光源波动,计算了1064 nm波长时厚度为0.52 mm的λ/4多级结晶石英波片产生的相位延迟误差

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基于石英晶体的旋光特性,我们提出利用石英晶体平凸透镜和偏振片来实现线偏振光的空间强度整形,通过控制入射光的偏振方向可以方便地改变输出激光的空间强度分布。

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SrBi2Ta2O9 (SBT) thin films on quartz substrates were prepared by use of the pulsed-laser deposition technique. The nonlinear refractive indices, n(2), Of the SBT films were measured by use of z-scan techniques with picosecond pulses. Large negative nonlinear refractive indices of 3.84 and 3.58 cm(2)/GW were obtained for the wavelengths 532 nm and 1.064 mum, respectively. The two-photon absorption coefficient was determined to be 7.3 cm/GW for 532 nm. The limiting behavior of SBT thin film on a quartz substrate was investigated in an f/5 defocusing geometry by use of 38-ps-duration, 532-nm, 1.064-mum. laser excitation. (C) 2001 Optical Society of America.

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报道了利用声光振幅调制锁模的方法,在激光二极管端面抽运Nd:YVO4激光器上获得320MHz高重复频率脉冲列的实验结果。实验采用平一平腔结构,腔长452mm,耦合输出镜透过率为3.6%。所用声光介质为熔融石英晶体,以铌酸锂作换能器,在驱动功率4.5W时,对1064nm波长衍射效率为50,相应的调制深度为0.31。在最佳锁模状态下,激光二极管抽运功率为3.5W,此时激光平均输出功率为15mw。示波器记录脉冲宽度680ps,实测光束质量因子M^2小于1.5。并在实验基础上对激光器工作的稳定性进行了分析,结果表

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研究了一种侧面抽运双包层光纤的方法,从被剥除了外包层、端面为350μm×400μm的D型双包层光纤内包层上切下长度为3mm的一段柱体,并胶合在相同的双包层光纤内包层的侧面上,构成了柱体-光纤侧面耦合器。半导体激光器的抽运光从该柱体的一端入射并通过它耦合进入双包层光纤的内包层,实验测得耦合器最大耦合效率为85%。该方法适用于输出功率为数瓦的光纤激光器和放大器的侧面抽运。

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Ce3+ ions were introduced into the Er3+/Yb3+ -codoped TeO2-WO3-ZnO glasses, and the effect of Ce3+ on the emission properties at 1.5 mu m band and the upconversion luminescence of Er3+ in the glasses was investigated. With the increasing of Ce3+ concentration, the emission intensity of Er3+ at 1.5 mu m band increases firstly, and then decreases. The optimal doping concentration of Ce3+ is about 2.07 x 10(20)/cm(3). As for the Er3+ emission at 1.5-mu m band, the fluorescence lifetime decreases a little from 3.4ms to 3.0ms, while the full width at half maximum (FWHM) hardly changes with the increase of Cc 3+ concentration. Due to the effective cross relaxation between Ce3+ and Er3+ : Er3+ (I-4(11/2)) + Ce3+ (F-2(5/2)) -> Er3+ (I-4(13/2)) + Ce3+ (F-2(7/2)), the upconversion emission intensity of Er3+ is reduced greatly. But when Ce3+ -doping concentration is too high, the other cross relaxation between Ce3+ and Er3+ : Er3+ (4I(13/2)) + Ce3+ (F-2(5/2)) -> Er3+ (I-4(15/2)) + Ce3+ (F-2(7/2)) happens, which depopulates the I-4(13/2) level of Er3+ and results in the decrease of the emission intensity and fluorescence lifetime of Er3+ at 1.5 mu m band.

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制备了用于离子交换法制备光波导器件的掺铒碲-钨-钠玻璃基质。应用扎得-奥菲而特(Judd—Ofelt)理论计算了玻璃样品的三个强度参量,由强度参量计算了Er^3+离子的自发跃迁几率、荧光分支比等光谱参量;应用麦克库玻(McCumber)理论,计算了Er^3+离子在1.5μm的受激发射截面,荧光测试发现Er^3+离子的荧光半峰全宽可达65nm。比较了Er^3+离子在不同玻璃基质中的光谱特性。结果表明,Er^3+离子在碲-钨-钠玻璃中具有较高的受激发射截面和较宽的荧光半峰全宽,可以用于宽带光波导器件的制备。