双调Q开关热退偏补偿全固态激光器

为了有效地补偿激光二极管(LD)侧向抽运1000 Hz重复率电光调Q Nd:YAG激光器棒状增益介质内存在的热致双折射损耗，设计了一种新颖的双调Q晶体开关复合谐振腔结构。实验结果表明，设计的双调Q晶体开关结构Nd:YAG激光器输出激光脉冲能量比单调Q晶体开关结构的非补偿腔输出能量提高了56%，当侧面抽运半导体激光器输出功率达到450 W时，激光输出达到30 mJ/pulse，输出光束偏振度优于10:1，激光脉冲宽度约14 ns。并获得6.7%的光-光转换效率。通过对双调Q开光激光谐振腔进行建模，并用求解速

采用国产双包层光纤的声光调Q激光器

实验报道采用我国自行设计的大模场掺镱双包层光纤，利用简单声光调Q装置，成功实现调Q运转；在1－50kHz调制频率下获得了百纳秒的调Q脉冲，其输出光束质量因子大约为2。当重复频率为1kHz时，获得了脉冲宽度为132ns，能量0.93mJ。同时实验中观察到的调Q脉冲常出现一点锁模现象，针对这一现象进行了讨论。

边缘泵浦被动调Q的Nd：YAG薄片激光器

文中报道了一台采用激光二极管部分边缘泵浦方式的高功率薄片激光器，晶体尺寸是1 mm×10 mm×60 mm。Cr4+：YAG被用来作为被动调Q晶体，在重复频率高于10kHz时，获得了脉宽10ns，平均功率70W，斜线效率为36\%的激光输出。通过控制泵浦光束直径的大小，我们在厚度方向得到了近似衍射极限的光束输出。整个激光器结构紧凑，大小为60 mm×174 mm×150 mm。

A Q-swicthed all-solid-state single-longitudinal-mode laser with adjustable pulse-width and high repetition rate

A single-longitudinal-mode (SLM) laser-diode pumped Nd: YAG laser with adjustable pulse width is developed by using the techniques of pre-lasing and changing polarization of birefingent crystal. The Q-switching voltage is triggered by the peak of the pre-lasing pulse to achieve the higher stability of output pulse energy. The output energy of more than 1 mJ is obtained with output energy stability of 3% (rms) at 100 Hz. The pulse-width can be adjusted from 30 ns to 300 ns by changing the Q-switching voltage. The probability of putting out single-longitudinal-mode pulses is almost 100%. The laser can be run over four hours continually without mode hopping.

Passive Q-switching of short-length Tm3+-doped silica fiber lasers by polycrystalline Cr2+:ZnSe microchips

We demonstrate passive Q-switching of short-length double-clad Tm3+-doped silica fiber lasers near 2 mu m pumped by a laser diode array (LDA) at 790 nm. Polycrystalline Cr2+:ZnSe microchips with thickness from 0.3 to 1 mm are adopted as the Q-switching elements. Pulse duration of 120 ns, pulse energy over 14 mu] and repetition rate of 53 kHz are obtained from a 5-cm long fiber laser. As high as 530 kHz repetition rate is achieved from a 50-cm long fiber laser at similar to 10-W pump power. The performance of the Q-switched fiber lasers as a function of fiber length is also analyzed. (c) 2008 Elsevier B.V. All rights reserved.

Cr^3＋，Yb^3＋，Er^3＋共掺磷酸盐铒玻璃转镜调Q激光性质研究

研究了Cr^3＋，Yb^3＋，Er^3＋共掺磷酸盐铒玻璃转镜调Q激光性质．三种Er2O3掺杂浓度的激光实验结果表明，在Er2O3名义掺杂浓度为0．5wt％时，玻璃的综合激光性质最好，重复频率为0．1Hz时，它的激光阈值功率为14．5mJ，最大输出能量为9．6mJ，斜率效率为0．55％．在同种实验条件下，比较了Cr14和Kigre公司生产的QE-7S激光性质参数，实验表明，前者激光阈值功率稍低，而后者的斜率效率和最大输出功率略高．

上转换效应对Er3+-Yb3+共掺磷酸盐玻璃被动调Q 激光输出的影响

To study the effects of upconversion in Erbium, a set of rate equations that simulates the performance of the passively Q-switched Er:Yb:glass laser with a Co²⁺:MgAl2O4 saturable absorber was set up. The dynamics of the Er³⁺ excited state and the effect of upconversion on the passively Q-switched laser are obtained through numerical simulation of the model. It is found that the impact ratios of upconversion effect on the peak power of the passively Q-switched laser pluse and the repetition rate are both decreased with the increase of pump power.

Cr,Yb:YAG晶体的自调Q激光性能

用光纤耦合激光二极管抽运Cr,Yb:YAG晶体获得了1.03 μm的自调Q激光输出,输出的调Q脉冲非常稳定,抽运阈值功率为680 mW,脉冲宽度为3.3 ns,获得的平均功率为156 mW,斜率效率为18.5%。随着抽运功率的增大,重复频率成线性增长,而脉宽略有减少,单脉冲能量和峰值功率都始终呈增大趋势。光束质量因子M2为1.17。

激光二极管抽运Na，Yb共掺CaF2晶体自调Q激光特性的研究

利用激光二极管（LD）抽运新型Na．Yb共掺CaF2（Na．Yb：CaF2）晶体，获得了1．05μm的自调Q激光输出。利用透射率1％的耦合输出镜，得到最低激光输出的抽运阈值功率仅为70mW。在透射率为2％的输出镜条件下，得到最大输出激光功率为390mw，此时激光的斜度效率达到20%。实验详细记录了自调Q脉冲的周期和宽度随抽运功率的变化关系，随着抽运功率的增加，自调Q脉冲的周期和宽度呈指数衰减。同时，还采用单棱镜进行光谱调谐实验，获得了1036～1059nm的自调Q激光调谐输出。

Passive Q-switching modelocked Yb3+-doped fibre laser with GaAs absorber grown at low temperature

GaAs absorber was grown at low temperature (550degreesC) by metal organic chemical vapour deposition (MOCVD) and was used as an output coupler with which we realized Q-switching modelocked Yb3+-doped fibre laser. The shortest period of the envelope of the Q-switched modelocking is about 3mus. The modelocking threshold is 4.27W and the highest average output pulse power is 290 mW. The modelocking frequency is 12 MHz.

Simultaneous Q switching and mode locking with narrow envelope width in a microchip Nd : YVO4 laser with a composite semiconductor absorber

By using a composite semiconductor absorber and an output coupler, we demonstrated a Q-switched and mode-locked diode-pumped microchip Nd:YVO4 laser. With a 350-mu m-thick crystal, the width of the Q-switched envelope was as short as 12 ns; the repetition rate of the mode-locked pulses inside the Q-switched pulse was more than 10 GHz. The average output power was 335 mW at a maximum pump power of 1.6 W. Q-switched envelope widths of 21 and 31 ns were also achieved with crystals 0.7 and 1.0 mm thick, respectively.

Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs

We reported a passive Q-switched diode laser pumped Yb:YAG microchip laser with an ion-implanted semi-insulating GaAs wafer. The wafer was implanted with 400-keV As^(+) in the concentration of 10^(16) ions/cm^(2). To decrease the non-saturable loss, we annealed the ion-implanted GaAs at 500 oC for 5 minutes and coated both sides of the ion-implanted GaAs with antireflection (AR) and highreflection (HR) films, respectively. Using GaAs wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse.

Passive Q-Switching in a Flash-Lamp Pumped Nd∶YAG Laser with Ion-Implanted GaAs Wafer

A passive Q-switched flash-lamp-pumped Nd:YAG laser with the ion-implanted semi-insulating GaAs water is reported．The wafer is implanted with 400keV As~+ ions in the concentration of 10~(16)cm~(-2). Using GaAs wafer as an absorber and an output coupler．62ns pulse duration of single pulse is obtained.

Laser drilling improving circuit board manufacturing

We reported here a novel technique for laser high speed drillings on Printed Circuit Boards (PCBs). A CNC solid laser based system is developed to drill through and blind vias as an alternative to mechanical drilling. The system employs an Acousto-Optic Q-switched Nd: YAG laser, a computer control system and an X-Y moving table which can handle up to 400 x 400 mm PCB. With a special designed cavity the laser system works in a pulsed operation in order to generate pulses with width down to 0.5 mu s and maximum peak power over 10kW at 10k repetition rate. Delivered by an improved optical beam transforming system, the focused laser beam can drill hobs including blind vias on PCBs with diameter in the range of 0.1 - 0.4 mm and at up to 300 - 500 vias per second (depending on the construction of PCBs). By means of a CNC X-Y moving system, laser pulses with pulse-to-pulse superior repeatability can be fired at desired location on a PCBs with high accuracy. This alternative technology for drilling through or blind vias on PCBs or PWBs (printed wiring boards) will obviously enhance the capability to printed boards manufacturing.

Laser action from 1,3,5,7-tetramethyl-2,6-diethyl-8-n-propyl pyrromethene-BF2

We measured spectroscopic and laser action properties of a novel 8-position substituted pyrromethene-BF2, namely 1,3,5,7-tetramethyl-2,6-diethyl-8-n-propyl pyrromethene-BF2 complex. The laser action was performed with the corresponding dye solution in ethanol, which was placed in a Littman-type laser cavity pumped by the second harmonic of a Q-switched Nd:YAG laser. The spectroscopic measurements clearly indicated that the corresponding dye solution in ethanol exhibited intense absorption in the visible spectral region with large fluorescence quantum yield. It possesses rather low triplet-triplet absorption in the spectral region 460-550 nm and almost negligible triplet-triplet absorption in the lasing spectral region. As a consequence, it lases nearly as efficiently as commercially available benchmark laser dyes such as Rhodamine-6G and outperformed them in wavelength tunability in our laser cavity and pump geometry. (C) 2002 Optical Society of America.