Native oxided AlAs current blocking layer for AIGaInP high brightness light emitting diodes

Native Oxide AlAs layer were employed to block the current injection from the tup anode. The luminous intensity exceeded 75 mcd of the LED chip with native oxide AlAs layer sandwiched 5 mu m AlGaAs current spreading layer under 20 mA current injection. Electrical and optical properties the LED chip and plastically sealed lamp were measured. Aging of the LED chip and lamp were performed under 70 degrees C and room temperature, Experiment results shown that there is no apparent effect of the native oxided AlAs layer and the process on the reliability of the LED devices.

Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes

A novel coupled distributed Bragg reflector (DBR) with double thickness periods was theoretically analyzed based on the spontaneous radiation properties of high brightness AlGaInP light emitting diodes(LED). Several important factors were considered including spontaneous radiation angle distribution, absorption and FTR of DBR. Calculation results showed that the optimum optical thickness of single layer of the DBR deviates from 1/4 lambda. AIGaInP high brightness light emitting diodes both with Al0.5Ga0.5As/AlAs coupled DBR and with conventional DBR were fabricated by metalorganic chemical vapor deposition(MOCVD). X-ray double crystal diffraction and reflection spectrum were employed to determine the thickness and reflectivity of the DBR. It was found that reflectivity of coupled DBR is less sensitive to incident angle than conventional DBR, higher external quantum efficiency of light emitting diodes with coupled DBR was obtained than that with conventional DBR.

High brightness AlGaInP orange light emitting diodes

Orange AlGaInP high brightness light emitting diodes (LEDs) were fabricated by low pressure metalorganic chemical vapor deposition(LP-MOCVD) technology. AlGaInP double heterojunction structure was used as active layer. 15 pairs of Al0.5Ga0.5As/AlAs distributed Bragg reflector and 7 mu m Al0.8Ga0.2As current spreading layer were employed to reduce the absorption of GaAs substrate and upper anode respectively. At 20mA the LEDs emitting wavelength was between 600-610nm with 18.3nm FWHM, 0.45mW radiation power and 1.7% external quantum efficiency. Brightness of the LED chips and LED lamps with 15 degrees viewing angle(2 theta(1/2)) reached 30mcd and 1000mcd respectively.

Enhancing the Performance of the Organic Light-emitting Device (OLED) by Thermal Treatment

A comparative study on the annealing of the ITO substrates and the organic layers were conducted on Organic light-emitting device (OLED). We fabricated four devices with the structure of Al/Alq(3)/TPD: PVK/NiO/ITO/Glass, and investigated the effect of heat on device performance by selectively annealing. When the TPD: PVK layers were annealed at 90 degrees C with 30 min annealing time and the ITO substrates were annealed at 300 degrees C with a constant annealing time (100 min). We find the OLED shows obvious performance improvement in brightness and current efficiency, which is attributable to the fact that annealing reduces defects and improves the interface structures of the organics and the organic/ITO interfaces. On the other hand, an appropriate annealing would slow the transportation of the hole, thus finally leads to more balanced electron and hole.

Solution-processable highly efficient yellow- and red-emitting phosphorescent organic light emitting devices from a small molecule bipolar host and iridium complexes

A bipolar transport compound, 2,5-bis(4-(9-(2-ethylhexyl)-9H-carbazol-3-yl) phenyl)-1,3,4-oxadiazole (CzOXD), incorporating both electron-and hole-transport functionalities, was synthesized and fully characterized by H-1 NMR, C-13 NMR, elemental analysis and mass spectrometry. Its thermal, electrochemical, electronic absorption and photoluminescent properties were studied

Red-light-emitting iridium complexes with hole-transporting 9-arylcarbazole moieties for electrophosphorescence efficiency/color purity trade-off optimizationE

The synthesis, structures, photophysics, electrochemistry and electrophosphorescent properties of new red phosphorescent cyclometalated iridium(III) isoquinoline complexes, bearing 9-arylcarbazolyl chromophores, are reported. The functional properties of these red phosphors correlate well with the results of density functional theory calculations

Red-Light-Emitting Iridium Complexes with Hole-Transporting 9-Arylcarbazole Moieties for Electrophosphorescence Efficiency/ Color Purity Trade-off Optimization

The synthesis, structures, photophysics, electrochemistry and electrophosphorescent properties of new red phosphorescent cyclometalated iridium(III) isoquinoline complexes, bearing 9-arylcarbazolyl chromophores, are reported. The functional properties of these red phosphors correlate well with the results of density functional theory calculations. The highest occupied molecular orbital levels of these complexes are raised by the integration of a carbazole unit to the iridium isoquinoline core so that the hole-transporting ability is improved in the resulting complexes relative to those with I-phenylisoquinoline ligands. All of the complexes are highly thermally stable and emit an intense red light at room temperature with relatively short lifetimes that are beneficial for highly efficient organic light-emitting diodes (OLEDs).

Cross-linkable aromatic amines as materials for insoluble hole-transporting layers in light-emitting devices

A series of cross-linkable aromatic amines has been synthesized by the multi-step synthetic rout. Full characterization of their structure by H-1 NMR-, IR- and mass spectrometry is presented. The synthesized materials were examined by various techniques including differential scanning calorimetry, thermogravimetry, UV and electron photoemission spectrometry.

Highly efficient white organic light-emitting devices based on a multiple-emissive-layer structure

Characteristics of white organic light-emitting devices based on phosphor sensitized fluorescence are improved by using a multiple-emissive-layer structure, in which a phosphorescent blue emissive layer is sandwiched between red and green&yellow ones. In this device, bis[(4,6-difluorophenyl)-pyridinato-N,C-2] (picolinato), bis(2,4-diphenyl-quinoline) iridium (III) acetylanetonate, fac bis (2-phenylpyridine) iridium, and 5,6,11,12-tetraphenylnaphthacene are used as blue, red, green, and yellow emitters, respectively.

A Dithienylbenzothiadiazole Pure Red Molecular Emitter with Electron Transport and Exciton Self-Confinement for Nondoped Organic Red-Light-Emitting Diodes

An amorphous photoluminescent material based on a dithienylbenzothiadiazole structure has been used for the fabrication of organic red-light-emitting diodes. The synergistic effects of the electron-transport ability and exciton confinement of the emitting material allow for the fabrication of efficient pure-red-light-emitting devices without a hole blocker.

Solution-Processible Red Iridium Dendrimers based on Oligocarbazole Host Dendrons: Synthesis, Properties, and their Applications in Organic Light-Emitting Diodes

A series of novel red-emitting iridium dendrimers functionalized with oligocarbazole host dendrons up to the third generation (red-G3) have been synthesized by a convergent method, and their photophysical, electrochemical, and electroluminescent properties have been investigated. In addition to controlling the intermolecular interactions, oligocarbazole-based dendrons could also participate in the electrochemical and charge-transporting process. As a result, highly efficient electrophosphorescent devices can be fabricated by spin-coating from chlorobenzene solution in different device configurations.

Undercut structure fabricated by complementary-structure micropatterning technique for the passive-matrix display of organic light-emitting diodes

This paper reports a new patterning method, the complementary-structure micropatterning (CSMP) technique, to fabricate the undercut structures for the passive-matrix display of organic light-emitting diodes (OLEDs). First, the polyvinylpyrrolidone (PVP) stripe patterns with a trapeziform cross-section were formed by micromolding in capillaries. Then the photoresist was spin coated on the substrate with the patterned PVP stripes and developed in water.

The role of molybdenum oxide as anode interfacial modification in the improvement of efficiency and stability in organic light-emitting diodes

It has been experimentally found that molybdenum oxide (MoO3) as the interfacial modification layer on indium-tin-oxide (ITO) in organic light-emitting diodes (OLEDs) significantly improves the efficiency and lifetime. In this paper, the role of MoO3 and MoO3 doped N,N '-di(naphthalene-1-yl)-N,N '-diphenyl-benzidine (NPB) as the interface modification layer on ITO in improvement of the efficiency and stability of OLEDs is investigated in detail by atomic force microscopy (AFM), polarized optical microscopy, transmission spectra, ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS).

A soluble nonionic surfactant as electron injection material for high-efficiency inverted bottom-emission organic light emitting diodes

A soluble nonionic surfactant, polyethylenimine 80% ethoxylated (PEIE) solution, was used as the electron injection material in inverted bottom-emission organic light emitting diodes (OLEDs). The transparent PEIE film was formed on indium-tin-oxide cathode by simple spin-coating method and it was found that the electron injection was greatly enhanced. The devices with PEIE electron injection layer had achieved significant enhancement in luminance and efficiency. The maximum luminance reached 47 000 cd/m(2), and the maximum luminance efficiency and power efficiency arrived at 19.7 cd/A and 10.6 lm/W, respectively.