Enhancing the Performance of the Organic Light-emitting Device (OLED) by Thermal Treatment

A comparative study on the annealing of the ITO substrates and the organic layers were conducted on Organic light-emitting device (OLED). We fabricated four devices with the structure of Al/Alq(3)/TPD: PVK/NiO/ITO/Glass, and investigated the effect of heat on device performance by selectively annealing. When the TPD: PVK layers were annealed at 90 degrees C with 30 min annealing time and the ITO substrates were annealed at 300 degrees C with a constant annealing time (100 min). We find the OLED shows obvious performance improvement in brightness and current efficiency, which is attributable to the fact that annealing reduces defects and improves the interface structures of the organics and the organic/ITO interfaces. On the other hand, an appropriate annealing would slow the transportation of the hole, thus finally leads to more balanced electron and hole.