Electronic structures of the zinc-blende GaN/Ga1-xAlxN compressively strained superlattices and quantum wells

The electronic structures of the zinc-blende GaN/Ga0.85Al0.15N compressively strained superlattices and quantum wells are investigated using a 6 x 6 Hamiltonian model (including the heavy hole, light hole and spin-orbit splitting band). The energy bands, wavefunctions and optical transition matrix elements are calculated. It is found that the light hole couples with the spin-orbit splitting state even at the k=0 point, resulting in the hybrid states. The heavy hole remains a pure heavy hole state at k=0. The optical transitions from the hybrid valence states to the conduction states are determined by the transitions of the light hole and spin-orbit splitting states to the conduction states. The transitions from the heavy hole, light hole and spin-orbit splitting states to the conduction states obey the selection rule Delta n=0. The band structures obtained in this work will be valuable in designing GaN/GaAlN based optoelectronic devices. (C) 1996 Academic Press Limited

Optical gain in zinc-blende GaN/Ga1-xAlxN strained quantum well laser

Based on the valence subbands of the zinc-blende GaN/Ga0.85Al0.15N strained quantum wells obtained by a 6x6 Hamiltonian (including heavy hole, light hole and spin-orbit splitting band), optical gain and radiative current density are calculated for the strained quantum well laser structures. The compressive strain in the GaN well region strongly depresses the TM mode optical gain and enhances the TE mode optical gain.

First-principles investigation of the electronic structure and magnetism of eskolaite

The electronic structure and magnetism of eskolaite are studied by using first-principles calculations where the on-site Coulomb interaction and the exchange interaction are taken into account and the LSDA+U method is used.The calculated energies of magnetic configurations are very well fitted by the Heisenberg Hamiltonian with interactions in five neighbour shells; interaction with two nearest neighbours is found to be dominant. The Neel temperature is calculated in the spin-3/2 pair-cluster approximation. It is found that the measurements are in good agreement with for the values of U and J that are close to those obtained within the constrained occupation method.The band gap is of the Mott-Hubbard type.

Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μmpolarization Indepent Semiconductor Optical Amplifier

The theoretical optimization of tensile strained InGaAsP/InGaAsP MQW for 1.5μm window polarization-independent semiconductor optical amplifier is reported. The valence-band structure of the MQw is calculated by using K·P method, in which 6×6 Luttinger effective-mass Hamiltonian is taken into account. LThe polarization dependent optical gain is calculated with various well width, strain, and carrier density.

Design and fabrication of polarization-insensitive 1550 mm semiconductor optical amplifiers

Polarization-insensitive semiconductor optical amplifiers (SOA's) with tensile-strained multi-quantum-wells as actice regions are designed and fabricated. The 6x6 Luttinger-Kohn model and Bir-Pikus Hamiltonian are employed to calculate the valence subband structures of strained quantum wells, and then a Lorentzian line-shape function is combined to calculate the material gain spectra for TE and TM modes. The device structure for polarization insensitive SOA is designed based on the materialde gain spectra of TE and TM modes and the gain factors for multilayer slab waveguide. Based on the designed structure parameters, we grow the SOA wafer by MOCVD and get nearly magnitude of output power for TE and TM modes from the broad-area semiconductor lasers fabricated from the wafer.

Electronic structure and optical property of semiconductor nanocrystallites

Semiconductor nanostructures show many special physical properties associated with quantum confinement effects, and have many applications in the opto-electronic and microelectronic fields. However, it is difficult to calculate their electronic states by the ordinary plane wave or linear combination of atomic orbital methods. In this paper, we review some of our works in this field, including semiconductor clusters, self-assembled quantum dots, and diluted magnetic semiconductor quantum dots. In semiconductor clusters we introduce energy bands and effective-mass Hamiltonian of wurtzite structure semiconductors, electronic structures and optical properties of spherical clusters, ellipsoidal clusters, and nanowires. In self-assembled quantum dots we introduce electronic structures and transport properties of quantum rings and quantum dots, and resonant tunneling of 3-dimensional quantum dots. In diluted magnetic semiconductor quantum dots we introduce magnetic-optical properties, and magnetic field tuning of the effective g factor in a diluted magnetic semiconductor quantum dot. (C) 2004 Elsevier B.V. All rights reserved.

Energy band and acceptor binding energy of GaN and AlxGa1-xN

The hole effective-mass Hamiltonian for the semiconductors of wurtzite structure is established, and the effective-mass parameters of GaN and AlxGa1-xN are given. Besides the asymmetry in the z and x, y directions, the linear term of the momentum operator in the Hamiltonian is essential in determining the valence band structure, which is different from that of the zinc-blende structure. The binding energies of acceptor states are calculated by solving strictly the effective-mass equations. The binding energies of donor and acceptor for wurtzite GaN are 20 and 131, 97 meV, respectively, which are inconsistent with the recent experimental results. It is proposed that there are two kinds of acceptors in wurtzite GaN. One kind is the general acceptor such as C, substituting N, which satisfies the effective-mass theory, and the other includes Mg, Zn, Cd etc., the binding energy of which deviates from that given by the effective-mass theory. Experimentally, wurtzite GaN was grown by the MBE method, and the PL spectra were measured. Three main peaks are assigned to the DA transitions from the two kinds of acceptor. Some of the transitions were identified as coming from the cubic phase of GaN, which appears randomly within the predominantly hexagonal material. The binding energy of acceptor in ALN is about 239, 158 meV, that in AlxGa1-xN alloys (x approximate to 0.2) is 147, 111 meV, close to that in GaN. (C) 2000 Published by Elsevier Science S.A. All rights reserved.

Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films

We present the theoretical results of the electronic band structure of wurtzite GaN films under biaxial strains in the (11 (2) over bar2)-plane The calculations are performed by the kappa p perturbation theory approach through using the effective-mass Hamiltonian for an arbitrary direction The results show that the transition energies decrease with the biaxial strains changing from -0 5% to 0 5% For films of (11 (2) over bar2)-plane, the strains are expected to be anisotropic in the growth plane Such anisotropic strains give rise to valence band mixing which results in dramatic change in optical polarisation property The strain can also result in optical polarisation switching phenomena Finally, we discuss the applications of these properties to the (11 (2) over bar2) plane GaN based light emitting diode and lase diode

超对称电磁相互作用系统的BRST量子化及其正则Ward恒等式

运用Becchi-Rouet-Stora-Tyutin路径积分量子化方法对超对称电磁相互作用系统进行了量子化.在相空间中化简了超对称电磁相互作用系统Hamiltonian量,进而使该系统的量子化被化简.构造体系的BRST生成元,得到了系统的BRST变换;给出了有效作用量,得到了Green函数生成泛函;构造了体系的规范生产元,并得到了系统的规范对称变换.最后,基于正则系统的Noether定理,给出了规范变换的Ward-Takahashi恒等式,进而讨论了正规顶角和传播子的关系,给出了正规顶角和传播子的两个关系式.

周期轨道与求迹公式-可积系统

选择二维无关联四次振子系统作为理论模型来验证Berry-Tabor公式的有效性 .在有理环面上积分Hamiltonian运动方程得到一系列的周期轨道 ,细致构造有理环面附近的轨道得到能量面上的曲率 ,并应用Berry -Tabor求迹公式经过Fourier变换得到的作用量函数 ,在作用量S <3 0的区间上 ,与得到的相应量子作用量函数进行了比较 ,其结果的一致性验证了求迹公式的有效性 .最后 ,对量子作用量函数RQM(S ,E) -S图上经典周期轨道作用量处出现的δ峰进行了讨论

可积系统——求迹公式和逆谱分析(英文)

研究了二维无关联四次振子系统 ,有理环面上积分 Hamiltonian运动方程给出了系统一系列周期轨道和经典物理量 ,使用半经典近似下的 Berry- Tabor求迹公式 ,得到了半经典的态密度 .应用 Fourier变换分析了每条周期轨道对态密度的贡献 ,并与量子态密度的 Fourier变换结果比较证实了半经典求迹公式的有效性

Low-lying states of heavy nuclei within the nucleon pair approximation

In this article we perform systematic calculations on low-lying states of 33 nuclei with A=202-212, using the nucleon pair approximation of the shell model. We use a phenomenological shell-model Hamiltonian that includes single-particle energies, monopole and quadrupole pairing interactions, and quadrupole-quadrupole interactions. The building blocks of our model space include one J=4 valence neutron pair, and one J=4,6,8 valence proton pair, in addition to the usual S and D pairs. We calculate binding energies, excitation energies, electric quadrupole and magnetic dipole moments of low-lying states, and E2 transition rates between low-lying states. Our calculated results are reasonably consistent with available experimental data. The calculated quadrupole moments and magnetic moments, many of which have not yet been measured for these nuclei, are useful for future experimental measurements.

BRST quantization and canonical Ward identity of the supersymmetric electromagnetic interaction system

According to the method of path integral quantization for the canonical constrained system in Becchi-Rouet-Stora-Tyutin scheme, the supersymmetric electromagnetic interaction system was quantized. Both the Hamiltonian of the supersymmetric electromagnetic interaction system in phase space and the quantization procedure were simplified. The BRST generator was constructed, and the BRST transformations of supersymmetric fields were gotten; the effective action was calculated, and the generating functional for the Green function was achieved; also, the gauge generator was constructed, and the gauge transformation of the system was obtained. Finally, the Ward-Takahashi identities based on the canonical Noether theorem were calculated, and two relations between proper vertices and propagators were obtained.

A novel approach to isoscaling: The role of the order parameter m = N-f-Z(f)/A(f)

Isoscaling is derived within a recently proposed modified Fisher model where the free energy near the critical point is described by the Landau O(m(6)) theory. In this model m = N-f-Z(f)/A(f) is the order parameter, a consequence of (one of) the symmetries of the nuclear Hamiltonian. Within this framework we show that isoscaling depends mainly on this order parameter through the 'external (conjugate) field' H. The external field is just given by the difference in chemical potentials of the neutrons and protons of the two sources. To distinguish from previously employed isoscaling relationships, this approach is dubbed: m-scaling. We discuss the relationship between this framework and the standard isoscaling formalism and point out some substantial differences in interpretation of experimental results which might result. These should be investigated further both theoretically and experimentally. (C) 2010 Elsevier B.V. All rights reserved.

二维无关联振子系统的量子化及能谱中长程关联的理论分析

量子经典对应是人们一直关心的基本问题．早期的WKB量子论及其推广EBK理论分别给出了一维及多维可积系统周期轨道的作用量量子化条件，但是，这些理论都没有明确的给出周期轨道与量子能级之间的对应关系．另一方面，近年来，人们在数值计算中发现量子能谱中存在着与周期轨道有紧密联系的长程关联，但是目前对长程关联的研究大多局限于数值计算，其背后的动力学原因有待进一步的探讨。应用二维无关联振子系统具有的标度不变性，对量子态密度进行Fourier变换，得到二维无关联振子系统的回归函数．另一方面，在有理环面上积分Hamiltonian运动方程，数值计算给出二维无关联四次振子系统的半经典回归谱。对二维无关联四次振子系统的量子回归谱和经典回归谱进行比较，量子和经典回归谱中的峰(显示了能级之间存在着长程关联)的位置大致一定验证了Berry-Tabor求迹公式的有效性。从可积系统的Be：rry-Tabor公式出发，导出了二维可积系统周期轨道作用量量子化条件，考虑有理环面上周期轨道必须满足的周期性条件，找到了量子能级与经典周期轨道之间的对应关系．这一对应关系表明，二维无关联振子系统的一组能级与一组周期轨道之间存在着一一对应关系。这组能级对应的周期轨道具有相同的拓扑，但每条周期轨道对应的系统能量等于它所对应的量子能级。进一步的，我们用二维无关联振子系统的量子经典对应关系去分析量子能谱中的长程关联。分析表明，当二维无关联振子系统回归函数中的作用量取某一系统能量下某一周期轨道的作用量的值时，那些与这一周期轨道拓扑相同的周期轨道对应的量子能级对回归函数的贡献相干。这些具有相同拓扑的周期轨道对应的量子能级间存在着长程关联。