Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition

In this paper, about 30 mu m thick B-doped polycrystalline silicon (poly-Si) thin films were deposited on quartz substrates, n-type single crystalline silicon wafers and p(++)-type poly-Si ribbons by a rapid thermal chemical vapour deposition system in a temperature range from 1000 to 1150 degrees C. Activation energy measurement and room temperature/temperature dependent Hall effect measurement were performed on the poly-Si thin films prepared on the former two kinds of substrates, respectively. It seems that the electrical properties of as-prepared poly-Si thin films could be qualitatively explained by Seto's grain boundary (GB) trapping theory although there is a big difference between our samples and Seto's in gain size and film thickness etc. The experimental results reconfirm that GB itself is a kind of most effective recombination center with trapping level near the midgap and trapping state density in the order of 1012 cm(-2) magnitude. Electron beam induced current measurements on the poly-Si thin films prepared on the poly-Si ribbons also show that severe recombination occurs at the positions of GBs. (c) 2005 Elsevier B.V All rights reserved.

Magnetic properties of silicon doped with gadolinium

The magnetic semiconductor GdxSi1-x was prepared by low-energy dual ion-beam epitaxy. GdxSi1-x shows excellent magnetic properties at room temperature. A high magnetic moment of 10 mu(B) per Gd atom is observed. The high atomic magnetic moment is interpreted as being a result of the RKKY mechanism. The indirect exchange interaction between ions is strong at large distances due to the low state density of the carriers in the magnetic semiconductor.

Magnetic properties and rectifying behaviour of silicon doped with gadolinium

The magnetic/nonmagnetic p-n junction was prepared by implanting gadolinium into the n-type silicon with low-energy dual-ion-beam epitaxy technology. The magnetic layer GdxSi1-x shows excellent magnetic properties at room temperature. High magnetic moment 10mu(B) per Gd atom is observed, which is interpreted by RKKY mechanism. Magnetic/nonmagnetic p-n junctions show rectifying behaviour, but no magnetoresistance is observed.

Photoluminescence and microstructure of the Erbium-Doped hydrogenated amorphous SiOx(0 < x < 2)

The hydrogenated amorphous SiOx films (a-SiOx:H) with various oxygen contents have been prepared using plasma enhanced chemical vapor deposition technique. The films were implanted with erbium and annealed by rapid thermal annealing. An intense photoluminescence (PL) of Er at 1.54 mum has been observed at 77 K and at room temperature. The PL intensity depends strongly on both the oxygen content of the film and the rapid thermal annealing temperature and reaches its maximum if the ratio of O/Si in the film is approximately equal to 1.0 at 77 K and to 1.76 at room temperature. The microstructure of the film also has strong influences on the PL intensity. The PL intensity at 250 K is slightly more than a half of that at 15 K. It means that the temperature quenching effect of the PL intensity is very weak.

Dislocation movement in nitrogen-doped Czochralski silicon

Dislocation movement in N-doped Czochralski silicon (Cz-Si) was surveyed by four point bend method. Dislocation movement velocities in Cz-Si doped with nitrogen, with both nitrogen and antimony, and with only antimony were investigated. The order of measured dislocation movement velocities, at 700 degrees C less than or equal to T less than or equal to 800 degrees C and under resolved stress sigma=4.1 kg/mm(2), was V-Sb.O > V-n.Sb.O>V-N.O. The experiments showed that nigtrogen doping could retard the movement of dislocations.

Energy transfer between silicon-oxygen-related defects and Yb3+ in transparent glass ceramics containing Ba2TiSi2O 8 nanocrystals

We report on the conversion of near-ultraviolet radiation of 250-350 nm into near-infrared emission of 970-1100 nm in Yb3+-doped transparent glass ceramics containing Ba2TiSi2O8 nanocrystals due to the energy transfer from the silicon-oxygen-related defects to Yb3+ ions. Efficient Yb3+ emission (F-2(5/2)-> F-2(7/2)) was detected under the excitation of defects absorption at 314 nm. The occurrence of energy transfer is proven by both steady state and time-resolved emission spectra, respectively, at 15 K. The Yb2O3 concentration dependent energy transfer efficiency has also been evaluated, and the maximum value is 65% for 8 mol % Yb2O3 doped glass ceramic. These materials are promising for the enhancement of photovoltaic conversion efficiency of silicon solar cells via spectra modification.

Strong visible up-conversion emissions and thermometric applications of Er3+-Yb3+ codoped Al2O3 prepared by the sol-gel method

The Er3+-Yb3+ codoped Al2O3 has been prepared by the sol-gel method using the aluminium isopropoxide [Al(OC3H7)(3)]-derived Al2O3 sols with addition of the erbium nitrate [Er(NO3)(3) center dot 5H(2)O] and ytterbium nitrate [Yb(NO3)(3) center dot 5H(2)O]. The phase structure, including only two crystalline types of doped Al2O3 phases, theta and gamma, was obtained for the 1 mol% Er3+ and 5 mol% Yb3+ codoped Al2O3 at the sintering temperature of 1,273 K. By a 978 nm semiconductor laser diodes excitation, the visible up-conversion emissions centered at about 523, 545, and 660 nm were obtained. The temperature dependence of the green up-conversion emissions was studied over a wide temperature range of 300-825 K, and the reasonable agreement between the calculated temperature by the fluorescence intensity ratio (FIR) theory and the measured temperature proved that Er3+-Yb3+ codoped Al2O3 plays an important role in the application of high temperature sensor.

铒离子浓度对掺Er^3＋碲酸盐玻璃的Judd-Ofelt理论参数的影响

制备了四种不同铒离子掺杂浓度的碲酸盐玻璃，通过测定吸收光谱计算了吸收谱线的振子强度，根据Judd-Ofelt理论计算了不同浓度下Er^3＋离子发光光谱的强度参数Ω（i=2，4，6），计算了自发辐射电偶和磁偶跃迁概率、辐射寿命、荧光分支比等参数，讨论了Er^3＋离子浓度变化对以上这些参数的影响。测试了Er^3＋：^4I13／2→^4I15／2跃迁对应的荧光光谱和Er^3＋：^4I13／2能级荧光寿命。最后应用McCumber理论计算了玻璃中Er^3＋：^4I13／2→^4I15／2跃迁对应的受激发射截面大小

具有高机械强度的掺Er^3＋：TeO2-Nb2O5玻璃的光谱性质研究

熔制了掺铒碲铌玻璃样品（100-X）TeO2-XNb2O5（X=5，10，15，20mol％），测试了其密度、折射率、转变温度、析晶温度、维氏机械强度、吸收光谱、荧光光谱、荧光寿命等参量。利用Judd-Ofelt和McCumber理论分别计算了铒离子强度参量Ωt（t=2，4，6）和受激发射截面σcmi的大小，研究了掺铒碲铌玻璃样品光谱参量对Nb2O5成分的依赖性，并与典型的碲锌钠玻璃（75TeO2-20ZnO-5Na2O）在热学、机械强度、光谱性质和放大品行四个方面进行了比较．

掺Er^3＋碲酸盐玻璃热稳定性的改进

制备了掺Er^3+-TeO2-ZnO-Na2O-Nb2O5和TeO2-PbO-B2O3系统玻璃，测定了玻璃的热稳定性和吸收光谱，在碲-锌-钠多组分玻璃中具有不同的玻璃转变温度Tg和开始析晶温度Tx，按照Hruby’s参数HR=(Tx-Tg)／(T1-Tc)；(Tx-Tg)越大则玻璃稳定性越好，在TeO2-ZnO-Na2O系统玻璃中ZnO含量增加则(Tx-Tg)增大，加入少量(小于10％(摩尔分数))Nb2O5，PbO使(Tx-Tg)变大，玻璃的热稳定性变好。

Effect of network modifiers on spectroscopic properties of erbium-doped phosphate glasses

The integrated absorption cross section Sigma(abs), I peak emission cross section sigma(cmi), Judd-Ofeld intensity parameters Omega(iota) ( t = 2,4,6), and spontaneous emission probability A(R) of Er3+ ions were determined for Erbium doped alkali and alkaline earth phosphate glasses. It is found the compositional dependence of sigma(emi) 5 almost similar to that of Sigma(abs), which is determined by the sum, of Omega(1) (3 Omega(2) + 10 Omega(4) + 21 Omega(6)). In addition, the compositional dependence of Omega(1) was studied in these glass systems. As a result, compared with. Omega(4) and Omega(6) the Omega(2) has a stronger compositional dependence on the ionic radius and content of modifers. The covalency of Er-O bonds in phosphate glass is weaker than that in silicate glass, germanate glass, aluminate glass, and tellurate glass, since Omega(6) of phosphate glass is relatively large. A(R) is affected by the covalency of the Er3+ ion sites and corresponds to the Omega(6) value.

TeO2-ZnO-Na2O-K2O玻璃中Er^3＋离子掺杂浓度对其发光及荧光寿命的影响

测量了不同掺杂浓度下Er^3+离子在碲酸盐玻璃中的吸收光谱、发射光谱和Er^3+离子的荧光寿命，计算了Er^3+离子的发射截面σc，分析了Er^3+离子掺杂浓度对其发光强度和荧光寿命的影响．结果表明，Er^3+离子掺杂浓度较低时，对其荧光强度和荧光寿命没有显著的影响；掺杂浓度高时，出现了浓度猝灭效应，使Er^3+离子荧光光强度降低，荧光寿命下降．实验确定了掺杂浓度最优值，同时对浓度猝灭机制进行了分析．

Cr^3＋，Yb^3＋，Er^3＋共掺磷酸盐铒玻璃转镜调Q激光性质研究

研究了Cr^3＋，Yb^3＋，Er^3＋共掺磷酸盐铒玻璃转镜调Q激光性质．三种Er2O3掺杂浓度的激光实验结果表明，在Er2O3名义掺杂浓度为0．5wt％时，玻璃的综合激光性质最好，重复频率为0．1Hz时，它的激光阈值功率为14．5mJ，最大输出能量为9．6mJ，斜率效率为0．55％．在同种实验条件下，比较了Cr14和Kigre公司生产的QE-7S激光性质参数，实验表明，前者激光阈值功率稍低，而后者的斜率效率和最大输出功率略高．

Influences of radiation trapping on spectroscopic properties of Er3+-doped fluorophosphate glasses

Fluorophosphate glasses with different contents of ErF3 were prepared. Due to the radiation trapping of Er, concentration dependence of the fluorescence lifetime is subject to distortion, and the stimulated-emission cross section calculated by the Fuchtbauer-Ladenburg equation is underestimated. The influence of radiation trapping on the measured fluorescence lifetime and width are investigated quantitatively. By comparing the intensity ratio of the 1556-1532 nm peak in the fluorescence spectrum with that in the stimulated-emission cross-section spectrum obtained according to the McCumber theory, the distortion ratio of fluorescence spectrum due to radiation trapping is obtained. An empirical way to quantitatively evaluate the influences of radiation trapping on fluorescence lifetime and width is proposed. (c) 2007 Optical Society of America.