Dislocation movement in nitrogen-doped Czochralski silicon
Data(s) |
1996
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Resumo |
Dislocation movement in N-doped Czochralski silicon (Cz-Si) was surveyed by four point bend method. Dislocation movement velocities in Cz-Si doped with nitrogen, with both nitrogen and antimony, and with only antimony were investigated. The order of measured dislocation movement velocities, at 700 degrees C less than or equal to T less than or equal to 800 degrees C and under resolved stress sigma=4.1 kg/mm(2), was V-Sb.O > V-n.Sb.O>V-N.O. The experiments showed that nigtrogen doping could retard the movement of dislocations. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Wei YD; Liang JW .Dislocation movement in nitrogen-doped Czochralski silicon ,CHINESE PHYSICS LETTERS,1996,13(5):382-385 |
Palavras-Chave | #半导体材料 #VELOCITIES |
Tipo |
期刊论文 |