Ultrabroad infrared luminescence from Bi-doped aluminogermanate glasses

We report ultrabroad infrared luminescence from Bi-doped aluminogermanate glasses. The infrared luminescence almost covers the whole low loss wavelength region (1200-1650 nm) of silica glass fiber when excited by a diode laser at 980 nm. The full width at half maximum (FWHM) of the luminescence is 510 nm. The luminescence peak can be divided into three Gaussian peaks, and the fluorescence lifetime of the three emissions are 297 mu s, 470 mu s and 1725 mu s, respectively. These fluorescence properties indicate that the glasses are promising material for broadband optical amplifiers. (C) 2007 Elsevier Ltd. All rights reserved.

稀土离子掺杂的多组分玻璃光纤

abstract {Rare earth ions doped multi-component glass fibers have important application in broad band fiber amplifier and up-conversion fiber lasers. In this paper, the mechanism and the progress of study on rare earth ions doped multi-component glass fibers in broad band fiber amplifier and up-conversion fiber lasers are introduced and reviewed. The questions and the applications of rare earth ions doped multi-component glass fibers in the future are also prospected. Based on the present research progress, it is suggested to further study the tellurite and bismuth glasses, which are used as fiber materials in broad band fiber amplifier. To up-conversion fiber laser, it is still need to further investigate novel glasses, which has low phonon energy and good physical and chemical properties.}

SiO2 对Bi2O3-B2O3 玻璃体系光学、热学及结构的 影响

Glasses with compositions 50Bi2O3-xB2O3- (50-x)SiO2(x=0, 10, 20, 30, 40, 50) in mol% have been prepared by using a normal melt-quench technique. The effect of SiO2 addition on thermal stability, optical properties and structural characteristic on Bi2O3-B2O3 glass were systematically investigated by using XRD, DTA, ultraviolet-visible transmittance spectra, midinfrared transmittance spectra and Raman spectra. The experimental results demonstrate that, with the addition of SiO2, thermal stability of glass samples has been obviously improved. Once the amount of SiO2 is too much, the glass samples tend to be phase seperation which results in the decrease of thermal stability. With increasing SiO2 content, the UV cutoff edge firstly shifts to short-wave band and then shifts to long-wave band, and the transmittance of mid-infrared has been greatly improved. With substitution of SiO2 for B2O3, the [BO3] triangles and [BO4] tetrahedral groups are gradually replaced by [SiO4]. [BiO6] octahedral and [SiO4] tetrahedral units are connected forming a vibrational mode of Bi-O-Si. The physical chemistry and optical performance of Bi2O3-B2O3 glass were greatly improved by addition of SiO2.

Intense frequency upconversion luminescence in Yb3+/Tm3+-codoped oxychloride germanate glasses

Yb3+/Tm3+-codoped oxychloride germanate glasses for developing potential upconversion lasers have been fabricated and characterized. Structural properties were obtained based on the Raman spectra analysis, indicating that PbCl2 plays an important role in the formation of glass network and has an important influence on the maximum phonon energies of host glasses. Intense blue and weak red emissions centered at 477 and 650 nm, corresponding to the transitions (1)G(4) -> H-3(6) and (1)G(4) -> H-3(4), respectively, were observed at room temperature. With increasing PbCl2 content, the intensity of blue (477 nm) emission increases significantly, while the red (650 nm) emission increases slowly. The results indicate that PbCl2 has more influence on the blue emissions than the red emission in oxychloride germanate glasses. The possible upconversion mechanisms are discussed and estimated. Intense blue upconversion luminescence indicates that these oxychloride germanate glasses can be used as potential host material for upconversion lasers. C (c) 2005 Springer Science + Business Media, Inc.

Frequency upconversion fluorescence emission of Er3+-doped oxychloride germanate glass

Frequency upconversion fluorescence property of Er3+-doped oxychloride germanate glass is investigated. Intense green and red emissions centred at 525, 546, and 657nm, corresponding to the transitions H-2(11/2) -> I-4(15/2), S-4(3/2) -> 4I(15/2), and F-4(9/2) -> I-4(15/2), respectively, were simultaneously observed at room temperature. The quadratic dependence of the 525, 546, and 657nm emissions on excitation power indicates that a two-photon absorption process occurs under 975nm laser diode (LD) excitation. The Raman spectrum investigation indicates that oxychloride germanate glass has the maximum phonon energy at similar to 805 cm(-1). The thermal stability of this oxychloride germanate glass is evaluated by differential scanning calorimetry, and thermal stability factor Delta T (Delta T = T-x-T-g) is 187 degrees C. Intense upconversion luminescence and good thermal stability indicate that Er3+-doped oxychloride germanate glass is a promising upconversion laser material.

Upconversion emission in Er3+ doped novel bismuthate glass

Novel Er3+-doped bismuth lead strontiam glass was fabricated and characterized, and the absorption spectrum and upconversion spectrum of the glass were studied. The Judd-Ofelt intensity parameters Omega(t)(t = 2, 4, 6) were found to be Omega(2) = 3.27 x 10(-20) cm(2), Omega(4) = 1.15 x 10(-20) cm(2), and Omega(6) = 0.38 x 10(-20) cm(2). The oscillator strength, the spontaneous transition probabilities, the fluorescence branching ratios, and excited state lifetimes were also measured and calculated. The upconversion emission intensity varies with the power of infrared excitation intensity. A plot of log I-up vs log I-IR yields a straight line with slope 1.86, 1.88 and 1.85, corresponding to 525, 546, and 657 nm emission bands, respectively, which indicates that a two-photon process for the red and green emission.

熔制条件对铋酸盐玻璃性质的影响

采用传统的玻璃熔融法制备了组成为60Bi2O3-20B2O3-15SiO2-5La2O3(mol%)的铋酸盐玻璃， 系统研究了不同工艺过程对玻璃性能的影响. 分析了样品ICP的成分，扫描电镜，X-射线衍射谱， 差热分析和紫外-可见-近红外透过光谱测试. 结果表明：使用刚玉坩埚能提高玻璃的抗析晶稳定性 和透过率，陶瓷坩埚和白金坩埚均受到严重腐蚀，玻璃组分也随之发生很大变化. 当熔制温度从1 100 ℃变化到1 300 ℃时，玻璃的颜色从浅黄色变到深红棕色. 尤其是白金粒子被腐蚀进入玻璃液 后，玻璃中很容易形成纳米颗粒或者团聚形成胶体粒子，在玻璃中形成色散源，加深玻璃的颜色， 降低透过率. 1 300 ℃下，白金粒子起到晶核剂的作用，生成Bi2Pt2O7和BiB3O6晶相，导致玻璃失透.

Effects of thermal treatment on broadband near-infrared emission from Bi-doped chalcohalide glasses

GeGaSKBr glass with Bi ions as emission centers were fabricated. An intense emission centered at around 1230 nm with the width of more than 175 nm was observed by 808 nm photo-excitation of the glass. Lower quenching rate and thermal treatment promote micro-crystallization process, thus strengthening the emission. Crown Copyright (c) 2008 Published by Elsevier Ltd. All rights reserved.

Broadband infrared luminescence from Li2O-Al2O3-ZnO-SiO2 glasses doped with Bi2O3

The broadband emission in the 1.2 similar to 1.6 mu m region from Li2O-Al2O3-ZnO-SiO2 ( LAZS) glass codoped with 0.01mol.% Cr2O3 and 1.0mol.% Bi2O3 when pumped by the 808nm laser at room temperature is not initiated from Cr4+ ions, but from bismuth, which is remarkably different from the results reported by Batchelor et al. The broad similar to 1300nm emission from Bi2O3-containing LAZS glasses possesses a FWHM ( Full Width at Half Maximum) more than 250nm and a fluorescent lifetime longer than 500 mu s when excited by the 808nm laser. These glasses might have the potential applications in the broadly tunable lasers and the broadband fiber amplifiers. (c) 2005 Optical Society of America.

GeO2 : Bi, M (M = Ga, B) glasses with super-wide infrared luminescence

Broadband infrared luminescence covering the optical telecommunication wavelength region of 0, E and S bands was observed in GeO2: Bi, M (M = Ga, B) glasses prepared by conventional melting-quenching technique. The luminescence with a maximum at around 1320 nm possesses a full width at half maximum larger than 300 nm and mean fluorescent lifetime longer than 500 mus when excited by an 808 nm-laser. These glasses may have potential applications in widely tunable laser and super-broadband optical amplifier for the optical communications. (C) 2005 Elsevier B.V. All rights reserved.

超宽带光纤放大器用的新型掺铋发光材料

最近，一种新型的掺铋发光材料引起了人们的关注。这种发光材料有长的荧光寿命（τ＞200μs），在800nm激光激发下发射波长在1200～1600nm区间的超宽带荧光（荧光半高宽FWHM＞200nm），其发光性质与以往文献中报道的Bi^3＋或Bi^2＋掺杂的发光材料的性质截然不同；光发射截面（σem）是光掺铒光纤放大器玻璃（EDFAG）的2～3倍，其σem×FWHM值是EDFAG的10倍左右，σem×τ值是掺Ti^3＋蓝宝石的3倍左右。

化学修饰铋膜电极检测重金属镉

随着我国工业的快速发展，环境污染日益严重，其中重金属已经成为最主要的污染物 之一。重金属具有分布广泛、半衰期长等特点，因而对人们的生产生活危害巨大。镉作为 一种常见的重金属污染物，它能够引发废用性萎缩、肾功能衰竭和感染等疾病，因此对环 境中存在的痕量镉的进行检测显得极为重要。传统的痕量分析方法包括光谱分析法和色谱 分析法，但这两方法所使用的仪器比较笨重，操作过程复杂，因而不适于在线分析。电化 学分析方法因其快速、便携、价格低廉、灵敏度高等特点而受到了人们的广泛关注，其中 较为常用的阳极溶出伏安法已经在镉离子等重金属离子的现场快速高灵敏检测中发挥了 重要作用。然而传统阳极溶出法中使用的汞电极因具有毒性而被许多国家禁止使用，所以 寻找汞电极的替代电极成为近年来的阳极溶出技术的研究热点。铋膜电极因具有类似汞电 极的分析性能且环境友好而受到了广泛重视，特别是各种化学修饰方法使得铋膜电极的性 能得到了显著提高。但是目前铋膜电极仍存在稳定性低、抗干扰能力差等问题，这些不足 严重制约了该类电极在重金属的阳极溶出分析中的应用。本文旨在通过新的化学修饰方法 解决铋膜电极应用中的瓶颈问题，发展具有优异分析性能的化学修饰铋膜电极应用于镉离 子等重金属离子的阳极溶出分析。本文的主要研究内容包括： l）以阳极溶出法测定镉离子为例，研究了化学修饰铋膜电极的响应特性，考察了富 集时间、富集电位、铋离子浓度、离子载体浓度和Nafion 浓度等实验条件对检测灵敏度的 影响。 2）将离子载体引入铋膜电极与Nafion 结合使用，研究了镉离子在该电极上的阳极溶 出响应，并探讨了铜、铅、铟三种金属离子对镉离子检测选择性的影响。将这种改良后的 化学修饰铋膜电极用于实际海水样品的检测，所得结果与ICP-MS 的测量结果基本一致。 3）将四氟硼酸钠引入铋膜电极与离子载体、碳纳米管结合使用，研究了镉离子在该 电极上的阳极溶出响应，考察了铜、铅、铟离子对镉离子测定的影响。 4）考察了电解富集和开路电位富集两种富集方式对电极灵敏度和选择性的影响。 实验表明：通过预富集，在未除氧的溶液中即可得到显著的镉离子溶出电流峰，且背 景噪音低；加入离子载体后，电极对目标金属有良好的选择性，可以在复杂基体条件下测 定重金属离子镉；电解富集条件下电极的的灵敏度较高，而开路电位富集条件下电极的选 择性较好。这种环保的无汞化学修饰电极为海水中重金属污染物的检测提供了新的手段。

Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method

Er/Bi codoped SiO2 thin films were prepared by sol-gel method and spin-on technology with subsequent annealing process. The bismuth silicate crystal phase appeared at low annealing temperature while vanished as annealing temperature exceeded 1000 degrees C, characterized by X-ray diffraction, and Rutherford backscattering measurements well explained the structure change of the films, which was due to the decrease of bismuth concentration. Fine structures of the Er3+-related 1.54 mu m light emission (line width less than 7 nm) at room temperature was observed by photoluminescence (PL) measurement. The PL intensity at 1.54 gm reached maximum at 800 degrees C and decreased dramatically at 1000 degrees C. The PL dependent annealing temperature was studied and suggested a clear link with bismuth silicate phase. Excitation spectrum measurements further reveal the role of Bi3+ ions for Er3+ ions near infrared light emission. Through sol-gel method and thermal treatment, Bi3+ ions can provide a perfect environment for Er3+ ion light emission by forming Er-Bi-Si-O complex. Furthermore, energy transfer from Bi3+ ions to Er3+ ions is evidenced and found to be a more efficient way for Er3+ ions near infrared emission. This makes the Bi3+ ions doped material a promising application for future erbium-doped waveguide amplifier and infrared LED

Growth of CeO2 : Bi12SiO20 crystals in multi-position furnace(II) - Space growth experiment

Ce-doped Bi12SiO20 single crystal with size of phi10mm x 40mm was successfully grown in space on board of the spacecraft Shenzhou No.3. The surface morphology of space-grown crystal is different from that of ground-grown crystal The space- and ground-grown crystals were measured by X-ray rocking curves, absorption spectra and micro-Raman spectra. The results show that the quality of Ce-deped crystal grown in space is better than that of the ground-grown one. The effect of doping on optical properties of BSO grown in space is evident in comparison with the ground-grown crystal.

V5+-doped Bi3.4Yb0.6Ti3O12 fatigue resistant ferroelectric thin films

In this paper, a serial of Bi3.4Yb0.6Ti3-xVxO12 (BYTV) thin film with different V5+ contents were deposited on Pt/Ti/SiO2/Si substrates by chemical solution deposition (CSD). The crystallized phase and electrical properties of the films were investigated using X-ray diffraction, polarization hysteresis loops, leakage current-voltage, and fatigue test. From our experimental results, it can be found that the ferroelectric properties can be improved greatly using V5+-doped in Bi3.4Yb0.6Ti3O12 (BYT) thin film, compared with the reported BYT thin film. The remanent polarization was enhanced and excellent leakage current characteristic with 10(-11)A at the bias voltage of 4V, which is much lower than the BYT thin film or some reported bismuth layer-structure ferroelectric films. Fatigue test shows that the fabricated films have good anti-fatigue characteristic after 10(10) switching cycles. (c) 2008 Published by Elsevier B.V.