Study of microstructure of high stability hydrogenated amorphous silicon films by Raman scattering and infrared absorption spectroscopy

The microstructure, hydrogen bonding configurations and hydrogen content of high quality and stable hydrogenated amorphous silicon (a-Si:H) films prepared by a simple ''uninterrupted growth/annealing" plasma enhanced chemical vapor deposition technique have been investigated by Raman scattering and infrared absorption spectroscopy. The high stability a-Si:H films contain small amounts of a microcrystalline phase and not less hydrogen (10-16 at. %), particularly, the clustered phase hydrogen, Besides, the hydrogen distribution is very inhomogeneous. Some of these results are substantially distinct from those of conventional device-quality n-Si:H film or stable cr-Si:H films prepared by the other techniques examined to date. The stability of n-Si:H films appears to have no direct correlation with the hydrogen content or the clustered phase hydrogen concentration. The ideal n-Si:H network with high stability and low defect density is perhaps not homogeneous. (C) 1998 American Institute of Physics.

Photoluminescence from Ge clusters embedded in porous silicon

Visible photoluminescence (PL) and Raman spectra of Ge clusters embedded in porous silicon (PS) have been studied. The as-prepared sample shows redshifted and enhanced room temperature PL relative to reference PS. This result can be explained by the quantum confinement effect on excitons in Ge clusters and tunnel of excitons from Si units of the PS skeleton to Ge clusters. One year storage in dry air results in a pronounced decrease in PL intensity but blue-shifted in contrast to reference PS. This phenomenon correlates to the size decrease of macerated Ce clusters and occurrence of "quantum depletion" in Ge clusters. Consequently, only excitons in Si units contribute to PL. (C) 1998 American Institute of Physics.

Modelica建模软件中求强连通分量与拓扑排序算法优化的研究

Modelica语言仿真建模在科研工作中已经得到了广泛应用。它能方便地对包含机械、电子、液压、控制、热流等领域的复合物理系统进行基于组件的仿真。现有基于Modelica语言的仿真建模软件支持图形化建模和文本建模两种方式，集成了面向对象、陈述式描述、统一建模、组件重用的优势，给科研工作带来了巨大的便利。 Modelica软件仿真的过程可归结为微分代数方程(differential algebraic equation,DAE)系统的求解。在求解DAE系统时，需要对DAE系统进行约简，直到庞大的DAE系统约简为目前自动求解方法成熟的ODE系统，或约简为方程个数不多的、指标较低的DAE系统，才能使Modelica建模仿真软件具有工业上的应用价值。在约简DAE系统之前，需要对之进行预处理，根据方程之间的数据依赖关系进行拓扑排序，确定求解顺序。排序的过程对应着将DAE系统结构关联矩阵进行块状下三角(block lower triangle,BLT)变换。寻找强连通分量和拓扑排序是对DAE系统进行预处理的重要组成部分。 本文剖析了Modelica软件在仿真时的运行机制，使用几个实例来详细描述在仿真过程中，Modelica软件完成的工作。在寻找强连通分量和拓扑排序这一步，本文提出了使用Kosaraju算法的策略，对由模型得到的有向图直接使用Kosaraju算法，得出DAE系统的求解顺序。文章叙述了强连通分量的含义，并阐述了在求强连通分量时的理论依据，由此引出了Tarjan算法和Kosaraju算法，再分析和比较Tarjan算法和Kosaraju算法，对比了两种策略的优劣，并进行了实验。同时，本文分析了OpenModelica软件包的结构，修改了软件包在寻找强连通分量及拓扑排序相关模块的代码。

DISORDER POINT FOR 2D ELECTRONS IN A HALF-FILLED LANDAU-LEVEL

Short-range correlations of two-dimensional electrons in a strong magnetic field are shown to be triangular in nature well below half-filling, but honeycomb well above half-filling. The half-filling point is thus proposed, and qualitatively confirmed by three-body correlation calculations, to be a new type of disorder point where short-range correlations change character. A wavefunction study also suggests that nodes become unbound at half-filling. Evidence for incompressibility but deformability of the half-filling state earlier suggested by Fano, Ortolani and Tosatti, is also presented and found to be in agreement with recent experiments.

Si／SiNx超晶格材料的非线性光学特性

采用射频磁控反应溅射技术与热退火处理制备了Si／SiN；超晶格材料。利用吸收光谱和X射线衍射对材料进行表征。通过皮秒脉冲激光单光束Z-扫描技术研究了该材料在非共振吸收区的三阶非线性光学特性，实验结果表明，样品的非线性折射率为负值，非线性吸收属于双光子吸收。由实验数据得到材料的三阶非线性极化率实部和虚部分别为1．27×10~(-7)，1．51×10~(-8)esu，该值比体硅材料的三阶非线性极化率值大5个数量级。对材料光学非线性产生的机理进行了探讨，认为材料的非线性极化率的增加来源于材料量子限制效应的增强。

nc-Si／SiN_x超晶格薄膜实现Nd

采用射频磁控反应溅射法制备a—Si／SiN。超晶格薄膜材料，热退火后形成纳米Si晶粒。把nc—Si／SiN，薄膜作为饱和吸收体插入Nd