159 resultados para zinc oxide films


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Gd2O3 thin films were deposited on Si (100) substrates at 650degreesC by a magnetron sputtering system under different Ar/O-2 ratios of 6:1, 4:1 and 2:1. The effect of the oxygen concentration on the properties of oxide thin films was investigated by X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy and capacitance-voltage (C-V)measurement. X-ray diffraction shows that the structure of oxide films changed from the monoclinic Gd2O3 phase to cubic Gd2O3 phase when the oxygen concentration increased. According to C-V measurement, the dielectric constant value of the samples deposited at different Ar/O-2 ratios is about 12. (C) 2004 Elsevier B.V. All rights reserved.

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This work demonstrates the condition optimization during liquid phase deposition (LPD) Of SiO2/GaAs films. LPD method is further applied to form Al2O3 films on semiconductors with poison-free materials. Proceeding at room temperature with inexpensive equipment, LPD of silica and alumina films is potentially serviceable in microelectronics and related spheres.

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Arrays of vertically well-aligned ZnO nanorod-nanowall junctions have been synthesized on an undoped ZnO-coated silicon substrate by a carbothermal reduction and vapour phase transport method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) show that the nanostructures are well-oriented with the c-axis perpendicular to the substrate. The room temperature photoluminescence (PL) spectrum of the as-prepared ZnO nanostructure reveals a dominant near-band-edge (NBE) emission peak and a weak deep level (DL) emission, which demonstrates its good optical properties. Temperature-dependent PL spectra show that both the intensity of NBE and DL emissions increased with decreasing temperature. The NBE emission at 3.27 eV is identified to originate from the radiative free exciton recombination. The possible growth mechanism of ZnO nanorod-nanowall junctions is also proposed.

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A modified solution method, successive ionic layer adsorption and reaction(SILAR), was applied to prepare transparent zinc oxide(ZnO) film on glass substrate at (125±5) ℃ in mixed ion precursor solution. The surface morphology and crystallizations of films were analyzed by field emission scanning microscopy(FESEM) and X-ray diffraction(XRD), respectively. The optical properties of the films were studied by ultraviolet visible(UV-Vis)spectroscopy. The results show that the obtained samples are polycrystallin...中文文摘:采用一种改进的液相成膜技术——连续离子层吸附与反应(SILAR)法,用锌氨络离子[Zn(NH3)4]2+溶液作为独立的前驱体溶液,以载玻片为衬底,在(125±5)℃的温度下沉积出致密、透明的ZnO薄膜。分别用冷场发射型扫描电镜(FESEM)和X射线衍射(XRD)分析了薄膜样品的表面形貌和结晶状态,用紫外-可见分光光度计(UV-Vis spectroscopy)研究了薄膜样品的发光性能。结果表明:获得样品为六角纤锌矿结构的多晶薄膜材料沿[002]方向择优生长;样品表面均匀、致密,厚度约为550nm;在可见光波段具有高的透射率(>80%)。

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Submicrometer zinc oxide (ZnO) with different morphologies including spindle-like, pencil-like, branch rod-like and frizzy flower-like shapes, have been hydrothermally synthesized in mixed solvents of ethanol and water at 140 degrees C. It was found that the volumes of added ammonia, surfactant (cetyltrimethylammonium bromide, CTAB), and mixed solvent play crucial roles in morphological control of ZnO nanostructures. Increasing the volume of ammonia added to the reaction system, the shape of ZnO evolves from spindle into branch rod-like. Synergetic influence between CTAB and ammonia can only be observed at high concentration of ammonia.

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With the presence of biopolymer-sodium alginate as additive, Eu-doped ZnO (zinc oxide) urchins consisting of nanorods were synthesized through a hydrothermal route. X-ray diffraction pattern makes evident the absence of phase other than wurtzite ZnO. Upon excited by 325 nm xenon laser, such nanostructured Eu-doped ZnO urchins emit white light, which originates from the luminescence of ZnO and the intra-4f transitions of Eu3+ ions. Besides acting as stabilizing agent, sodium alginate may also sensitize the Eu3+ ions in the nanostructures and facilitate the energy transfer from the host to Eu3+ ions. (c) 2006 American Institute of Physics.

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ZnO and ZnO: Zn powder phosphors were prepared by the polyol-method followed by annealing in air and reducing gas, respectively. The samples were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), X-ray photoelectron spectra (XPS), electron paramagnetic resonance (EPR), and photoluminescence (PL) and cathodoluminescence ( CL) spectra, respectively. The results indicate that all samples are in agreement with the hexagonal structure of the ZnO phase and the particle sizes are in the range of 1-2 mu m. The PL and CL spectra of ZnO powders annealed at 950 degrees C in air consist of a weak ultraviolet emission band ( similar to 390 nm) and a broad emission band centered at about 527 nm, exhibiting yellow emission color to the naked eyes. When the sample was reduced at the temperatures from 500 to 1050 degrees C, the yellow emission decreased gradually and disappeared completely at 800 degrees C, whereas the ultraviolet emission band became the strongest. Above this temperature, the green emission ( similar to 500 nm) appeared and increased with increasing of reducing temperatures.

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Many efforts have been made in fabricating three-dimensional (3D) ordered zinc oxide (ZnO) nanostructures due to their growing applications in separations, sensors, catalysis, bioscience, and photonics. Here, we developed a new synthetic route to 3D ZnO-based hollow microspheres by a facile solution-based method through a water-soluble biopolymer (sodium alginate) assisted assembly from ZnO nanorods. The products were characterized by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, selected area electron diffraction, and X-ray photoelectron spectroscopy. Raman and photoluminescence spectra of the ZnO-based hollow microspheres were obtained at room temperature to investigate their optical properties. The hollow microspheres exhibit exciting emission features with a wide band covering nearly all the visible region. The calculated CIE (Commission Internationale d'Eclairage) coordinates are 0.24 and 0.31, which fall at the edge of the white region (the 1931 CIE diagram). A possible growth mechanism of the 3D ZnO superstructures based on typical biopolymer-crystal interactions in aqueous solution is tentatively proposed, which might be really interesting because of the participation of the biopolymer.

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Regular zinc oxide (ZnO) tetrapods with a flat plane have been obtained on Si(1 0 0) substrate via the chemical vapour deposition approach. The x-ray diffraction result suggests that these tetrapods are all single crystals with a wurtzite structure that grow along the (0 0 0 1) direction and corresponding electron backscatter diffraction analysis reveals the crystal orientation of growth and exposed surface. Furthermore, we find some ZnO tetrapods with some legs off and the angles between every two legs are measured with the aid of scanning electron microscopy and image analysis, which benefit to reveal the structure of ZnO tetrapods joint. The structure model and growth mechanism of ZnO tetrapods are proposed. Besides, the stable model of the interface was obtained through the density-functional theory calculation and the energy needed to break the twin plane junction was calculated as 5.651 J m(-2).

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Density functional theory (DFT) calculations were employed to explore the gas-sensing mechanisms of zinc oxide (ZnO) with surface reconstruction taken into consideration. Mix-terminated (10 (1) over bar0) ZnO surfaces were examined. By simulating the adsorption process of various gases, i.e., H-2, NH3, CO, and ethanol (C2H5OH) gases, on the ZnO (10 (1) over bar0) surface, the changes of configuration and electronic structure were compared. Based on these calculations, two gas-sensing mechanisms were proposed and revealed that both surface reconstruction and charge transfer result in a change of electronic conductance of ZnO. Also, the calculations were compared with existing experiments.

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This study focuses on mechanism of ceramic coating on Al-Si alloys with bulk primary Si using plasma electrolytic oxidation (PEO) technology. Al-Si alloys with 27-32% Si in weight were used as substrates. The morphologies, composition and microstructure of PEO coatings were investigated by scanning electron microscopy (SEM) with energy dispersive X-ray system (EDX). Results showed that the PEO process had four different stages. The effect of bulk Si is greatly on the morphology and composition of coatings at first three stages. Anodic oxide films formed on Al and Si phases, respectively. When the voltage exceeded 40 V, glow appeared and concentrated on the localized zone of interface of Al and Si phase. Al-Si-O compounds formed and covered on the dendrite Si phase surface, and the coating on bulk Si, which was silicon oxide, was rougher than that on other phase. If the treatment time was long enough, the coatings with uniform surface morphologies and elements distribution will be obtained but the microstructure of inner layer is looser due to the bulk Si.

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利用射频磁控溅射法室温下在Si(100)衬底上制备了N掺杂的TiO2薄膜,并且采用x射线衍射(XRD)、X射线光电子能谱(XPS)和透射光谱对薄膜进行了表征。XRD结果表明在纯Ar和N2(33.3%)/Ar气氛下制备的TiO2-xNx薄膜均为单一的金红石相,薄膜结晶性良好,呈高度(211)择优取向,而在N2(50.0%)/Ar下制备的薄膜结晶性明显变差;对于N掺杂的TiO2薄膜,XPS表明部分N原子进入TiO2晶格,并且以N—Ti—O、N—O键以及间隙式N原子形式存在;透射光谱表明掺N后的TiO2薄膜吸收边发生了红移。

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We investigate mechanisms of laser induced damage thresholds (LIDTs) of multi-layer dielectric gratings (AIDG,). It is found that the laser damage thresholds of MDGs and unstructured dielectric multi-layer coatings (the substrate of MDG) are 3.15J/cm(2) and 9.32 J/cm(2), respectively, at 1064nm (12ns) with the Littrow angle 51.2 degrees and the TEM00 mode. The laser-induced damage mechanism of multi-layer dielectric is presented with the analysis of the following factors: The dominant factor is the pollution on the corrugated surface, which is induced by the complex manufacture process of multi-layer dielectric gratings; another is the electric field distribution along the corrugated surface. The third reason is due to the reduction in stoichiometry of oxide films, resulting from the manufacture process of etching.

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Ta2O5薄膜采用传统的电子束蒸发方法沉积在BK7基底上。文中对SiO2保护层和退火对Ta2O5薄膜的激光损伤阈值的不同影响进行了研究。结果表明,SiO2保护层不会影响薄膜内的电场分布,薄膜微结构和微缺陷密度,但是会使薄膜的吸收稍微增大;而退火对降低薄膜的微缺陷密度和吸收较有效。SiO2保护层和退火都有利于提高Ta2O5薄膜的抗激光损伤能力,并且退火对提高阈值的影响更为明显。此外,采用SiO2保护层和退火结合的方法,获得了具有最大激光损伤阈值的薄膜。

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We have investigated the magnetic properties of Co-doped zinc oxide (ZnO) film deposited on silicon substrate by magnetron sputtering. Co ions have a valence of 2+ and substitute for Zn sites in the lattice. By using a chemical etching method, an extrinsic ferromagnetism was demonstrated. The observed ferromagnetism is neither associated with magnetic precipitates nor with contamination, but originates from the silicon/silicon oxide interface. This interface ferromagnetism is characterized by being temperature independent and by having a parallel magnetic anisotropy. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2989128]