Recent progresses of Si-based photonics in chinese main land

Si-based photonic materials and devices, including SiGe/Si quantum structures, SOI and InGaAs bonded on Si, PL of Si nanocrystals, SOI photonic crystal filter, Si based RCE (Resonant Cavity Enhanced) photodiodes, SOI TO (thermai-optical) switch matrix were investigated in Institute of Serniconductors, Chinese Academy of Sciences. The main results in recent years are presented in the paper. The mechanism of PL from Si NCs embedded in SiO2 matrix was studied, a greater contribution of the interface state recombination (PL peak in 850 similar to 900 nm) is associated with larger Si NCs and higher interface state density. Ge dots with density of order of 10(11) cm(-2) were obtained by UHV/CVD growth and 193 nm excimer laser annealing. SOI photonic crystal filter with resonant wavelength of 1598 nm and Q factor of 1140 was designed and made. Si based hybrid InGaAs RCE PD with eta of 34.4% and FWHM of 27 nut were achieved by MOCVD growth and bonding technology between InGaAs epitaxial and Si wafers. A 16x16 SOI optical switch matrix were designed and made. A new current driving circuit was used to improve the response speed of a 4x4 SOI rearrangeable nonblocking TO switch matrix, rising and failing time is 970 and 750 ns, respectively.

Si-based optoelectronic devices and their attractive applications

The semiconductor photonics and optoelectronics which have a great significance in the development of advanced high technology of information systems will be discussed in this paper. The emphasis will be put on the recent research carried out in our laboratory in enhanced luminescence from low dimensional materials such as SiGe/Si and Er-doped Si-rich SiO2/Si and Er-doped SixNy/Si. A ring shape waveguide structure, used to promote the effective absorption coefficient in PIN photodetector for 1.3 mu m wavelength and a resonant cavity enhanced structure, used to improve the quantum efficiency and response in heterostructure photo-transistor (HPT), are also proposed in this paper.

On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J

We have explored the shared-layer integration fabrication of an resonant-cavity-enhanced p-i-n photodector (RCE- p-i-n-PD) and a single heterojunction bipolar transistor (SHBT) with the same epitaxy grown layer structure. MOCVD growth of the different layer structure for the GaAs based RCE- p-i-n-PD/SHBT require compromises to obtain the best performance of the integrated devices. The SHBT is proposed with super-lattice in the collector, and the structure of the base and the collector of the SHBT is used for the RCE. Up to now, the DC characteristics of the integrated device have been obtained.

Recent progresses of SOI-based photonic devices - art. no. 60201R

SOI (Silicon on Insulator) based photonic devices, including stimulated emission from Si diode, RCE (Resonant Cavity Enhanced) photodiode with quantum structure, MOS (Metal Oxide Semiconductor) optical modulator with high frequency, SOI optical matrix switch and wavelength tunable filter are reviewed in the paper. The emphasis will be played on our recent results of SOI-based thermo-optic waveguide matrix switch with low insertion loss and fast response. A folding re-arrangeable non-blocking 4x4 matrix switch with total internal reflection (TIR) mirrors and a first blocking 16 x 16 matrix were fabricated on SOI wafer. The extinction ratio and the crosstalk are better. The insertion loss and the polarization dependent loss (PDL) at 1.55 mu m increase slightly with longer device length and more bend and intersecting waveguides. The insertion losses are expected to decrease 2-3 dB when anti-reflection films are added in the ends of the devices. The rise and fall times of the devices are 2.1 mu s and 2.3 mu s, respectively.

A GaAs-Based MOEMS Tunable RCE Photodetector with Single Cantilever Beam

A GaAs-based micro-opto-electro-mech anical-systems(MOEMS) tunable resonant cavity enhanced(RCE)photodetector with a continuous tuning range of 31nm under a 6V tuning voltage is demonstrated. The single cantilever beam structure is adopted for this MOEMS tunable RCE photodetector. The maximum and minimum peak quantum efficiency during the tuning are 36.9 % and 30. 8 %, respectively. The maximum and minimum full-width-at-halfmaximum (FWHM) are 20nm and 14nm,respectively. The dark current density is 7.46A/m2 without bias.

1.55-μm Si-based MOEMS optical tunable filter

A prototype 1.55-μm Si-based micro-opto-electro-mechanical-systems (MOEMS) tunable filter is fabricated, employing surface micromachining technology. Full-width-at-half-maximum (FWHM) of the transmission spectrum is 23 nm. The tuning range is 30 nm under 50-V applied voltage. The device can be readily integrated with resonant cavity enhanced (RCE) detector and vertical cavity surface emitting laser (VCSEL) to fabricate tunable active devices.

Si-based optoelectronic devices and their attractive applications

The semiconductor photonics and optoelectronics which have a great significance in the development of advanced high technology of information systems will be discussed in this paper. The emphasis will be put on the recent research carried out in our laboratory in enhanced luminescence from low dimensional materials such as SiGe/Si and Er-doped Si-rich SiO2/Si and Er-doped SixNy/Si. A ring shape waveguide structure, used to promote the effective absorption coefficient in PIN photodetector for 1.3 mu m wavelength and a resonant cavity enhanced structure, used to improve the quantum efficiency and response in heterostructure photo-transistor (HPT), are also proposed in this paper.

Resonant mode analysis in toroidal cavities with elliptic cross-sections

Resonant cavity modes in a torus with elliptical cross section are studied by means of a direct variational method. The nonlinear effects of toroidicity and ellipticity on the frequency of the basic mode are analyzed simply and systematically without the restriction of linear theory. It is shown that the toroidicity effect on the m = 0 transverse magnetic mode is less-than-or-equal-to 11%. The frequency of the mode shifts approximately 11-29% when the elongation of the cross section changes from 1 to 2. The effects of toroidicity and ellipticity differ for each resonant mode.

Array for 980nm Vertical Cavity Surface Emitting Diodes and Detectors

Both the vertical cavity surface emitting diodes and detectors are fabricated by using the epitaxial wafer with resonant cavity structure. Their characteristics are analyzed. The light emitters have high spectral purity of 4.8nm and high electroluminescence intensity of 0.7mW while injection current is 50mA. A 1*16 array of surface emitting light device is tested on line by probes and then used for module. The light detectors have wavelength selectivity and space selectivity. The required difference in input mirror reflectivity between emitters and detectors can easily be achieved though varying the numbers of top DBR period by etching.

Tunability of resonant wavelength by Fabry-Perot microcavity in organic light-emitting diodes

Distributed Bragg reflectors (DBR) with different reflection wavelengths were designed, and were used to fabricate microcavity organic light-emitting diodes (OLEDs) based on tris(8-hydroxyquinoline)-aluminum (Alq(3)) as the emitter and N, N'-di(naphthalene-1-yl)-N, N'-diphenyl-benzidine (NPB) as the hole-transporting layer. The microcavity was composed of DBR dielectric mirror and metal electrode aluminum (Al) mirror. Some effects of vertical optical Fabry-Perot microcavity on spontaneous emission in OLEDs were investigated. Spectral narrowing, enhancement of emitting intensity and anglular dependence of emission were observed due to the microcavity effect. It was found experimentally that the utilization of DBR is a better method to adjust the emissive mode in the resonant cavity in OLEDs well. Thus the realization of different color light emission becomes possible by the combination of carefully designed microcavity and electroluminescent organic semiconductors in a single LED.

基于偏振度检测的光纤电流传感方案

本文提出了一种将光学谐振腔中多次来回反射所产生的法拉第旋转积累效应转化为光学信号偏振度变化的光纤电流传感方案。这种方案的主要优点是可以克服环境等因素的扰动带来偏振态变化所产生的影响。文中对所提出方案的特性进行了简单的理论分析和模拟计算，并给出了相应的实验结果验证。

室温下稳定的多波长掺铒光纤激光器的研究

通过在线形谐振腔中引入一段缠绕在压电陶瓷上的单模光纤作为正弦相位调制器，使得激射波长的损耗不固定，抑制由于掺铒光纤的均匀展宽效应引起的模式竞争，从而避免了在室温下不稳定的单波长激射，实现了多波长掺铒光纤激光器的稳定输出。为了获得平坦的多波长输出，在谐振腔里使用了一个损耗峰位于1530nm处的长周期光纤光栅，以获得较为平坦的增益谱。通过两个3dB耦合器制成的反射型梳状滤波器的滤波作用，实验中观察到稳定的多波长激射，相邻波长间隔约为0．45nm。中心9个波长的输出功率平坦度为10dB，边模抑制比大于25dB。

频率分辨光学开关法测量飞秒脉冲

阐述了频率分辨光学开关法测量飞秒脉冲的原理，详细分析了模式尺寸效应和非线性效应对飞秒脉冲测量的影响。构建了一台用于飞秒脉冲测量的二次谐波-频率分辨光学开关装置，利用该装置对谐振腔输出的飞秒脉冲及压缩后的脉冲进行了测量。得到了飞秒脉冲的时间宽度及光谱宽度、电场及其相位在时域和频域的详细信息。谐振腔直接输出脉冲的时间宽度为56 fs，光谱宽度为27 nm，时间带宽积为0.686，算法中的最小误差为0.001792。脉冲压缩后的测量结果为27 fs，光谱宽度为92 nm，时间带宽积为1.27，算法误差为0.00

机载测深激光雷达千赫兹全固态激光器设计及特性研究

将千赫兹高功率全固态Nd：YAG激光器的增益介质当作厚透镜处理，使用矩阵的方法对等效热透镜腔进行分析。采用多条半导体激光列阵侧向紧凑抽运结构设计，提高了增益介质光抽运的均匀性。根据实际抽运功率，通过模拟计算，设计了平凸非稳腔。选择的凸面全反镜的最佳曲率半径有效地补偿了增益介质热透镜效应，激光器实现了动态稳腔运转，激光脉冲能量输出斜度效率大于13％，光束发散角优于1.3mrad。

激光二极管端面抽运Nd∶YVO_4板条激光器及其热效应

激光器中激光介质采用板条状几何结构可以极大地降低它的热效应,但仍然需要进一步分析其影响,进而优化激光器效率。利用有限元分析方法分析了部分端面抽运的混合腔板条激光器中激光介质的热效应,计算的热透镜焦距与实测结果基本相符。分析了热效应对模式匹配的影响,分析结果对于优化激光器效率、改进谐振腔设计具有一定的参考价值。并在分析的基础上进行了混合腔实验,抽运功率为110 W时,获得连续输出激光功率41.5 W,光-光转换效率约38%,斜效率达58.8%,M2因子为非稳腔方向M2x=1.59,稳定腔方向M2y=1.55。