Exciton states of vertically stacked self-assembled InAs quantum disks in an axial magnetic field

We have studied the exciton states of vertically stacked self-assembled quantum disks within the effective mass approximation. The ground energies of a heavy-hole and a light-hole excitons as functions of the vertical disk separation are presented and discussed. The transition energy of a heavy-hole ground-state exciton is calculated and compared with the experimental data. The binding energies are discussed in terms of the probability of ground wave function. The ground energies of a heavy-hole and a light-hole excitons as functions of the applied axial magnetic field are calculated and the effect of disk size (radius of disks) on exciton energies is discussed. (c) 2006 Elsevier B.V. All rights reserved.

Study of nucleation positions of InAs islands on stripe-patterned GaAs(100) substrate

By combination of prepatterned substrate and self-organized growth, InAs islands are grown on the stripe-patterned GaAs (100) substrate by solid soul-cc molecular beam epitaxy. Four [011] stripe-patterned substrates different in pitch, depth, and sidewall angle, respectively, are used in this work. The surface morphology obtained by atomic force microscopy shows that the InAs quantum dots can be formed either on the ridge or on the sidewall of the stripes near the bottom, depending on the structure of the stripes on the patterned substrate. The mechanism determining the nucleation position of the InAs dots is discussed. The optical properties of the InAs dots on the patterned substrates are also investigated by photo luminescence. (c) 2005 Elsevier B.V. All rights reserved.

Magnetism and photoluminescence in manganese-gallium oxide nanowires with monoclinic and spinel structures

Manganese-gallium oxide nanowires were synthesized via in situ Mn doping during nanowire growth using a vapor phase evaporation method. The microstructure and composition of the products were characterized via transmission electron microscopy (TEM), field emission scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy. The field and temperature dependence of the magnetization reveal the obvious hysteresis loop and large magnitude of Curie-Weiss temperature. The photoluminescence of the manganese-gallium oxide nanowires were studied in a temperature range between 10 and 300 K. A broad green emission band was observed which is attributed to the T-4(1)-(6)A(1) transition in Mn2+ (3d(5)) ions. (c) 2005 Elsevier B.V. All rights reserved.

Size evolution and optical properties of self-assembled InAs quantum dots on different matrix

InAs quantum dots have been grown by solid source molecular beam epitaxy on different matrix to investigate the effect on the structure and optical properties. High density of 1.02 x 10(11) cm(-2) of InAs islands on In0.15Ga0.85As and In0.15Al0.85As underlying layer has been achieved. Atomic force microscopy and photoluminescence spectra show the size evolution of InAs islands on In0.15Ga0.85As underlying layer. A strong 1.3 mum photoluminescence from InAs islands on In0.15Ga0.85As underlying layer and with InGaAs strain-reduced layer has been obtained. Single-mirror light emitting diode structures with InAs quantum dots capped by InGaAs grown on InGaAs layer as active layer were fabricated and the corresponding radiative efficiency was deduced to be as high as 20.5%. Our results provide important information for optimizing the epitaxial structures of 1.3 mum wavelength quantum dots devices. (C) 2003 Elsevier B.V. All rights reserved.

Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE

Surface morphology and optical properties of 1.3 mum self-organized InGaAs/GaAs quantum dots structure grown by molecular beam epitaxy have been investigated by atomic force microscopy and photoluminescence measurements. It has been shown that the surface morphology evolution and emission wavelengths of InGaAs/GaAs QDs can be controlled effectively via cycled monolayer deposition methods due to the reduction of the surface strain. Our results provide important information for optimizing the epitaxial parameters for obtaining 1.3 mum long wavelength emission quantum dots structures. (C) 2002 Elsevier Science B.V. All rights reserved.

Transport properties through quantum dot in a vertical electric field

The transport properties through a quantum dot are calculated using the recursion method. The results show that the electric fields can move the conductive peaks along the high- and low-energies. The electric field changes the intensity of conductance slightly. Our theoretical results should be useful for researching and making low-dimensional semiconductor optoelectronic devices. (C) 2002 Elsevier Science B.V. All rights reserved.

Lasing of CdSSe quantum dots in glass spherical microcavity

Glass spherical microcavities containing CdSSe semiconductor quantum dots (QDs) of a few microns in diameter are fabricated using a physical method. When a single glass microspherical cavity is excited by a laser beam at room temperature, very strong and sharp whispering gallery modes are shown on the background of PL spectra of CdSSe QDs, which confirms that coupling between the optical emission of embedded QDs and spherical cavity modes is realized. For a glass microsphere only 4.6 mum in diameter, it was found that the energy separation is nearly up to 26 nm both for TE and TM modes. With the increasing excitation intensity, the excitation intensity dependence of the emission intensity is not linear in the double-logarithmic scale. Above the threshold value, the linewidths of resonance modes become narrower. The lasing behavior is achieved at relatively low excitation intensity at room temperature. High optical stability and low threshold value make this optical system promising in visible microlaser applications. (C) 2002 Elsevier Science B.V. All rights reserved.

Structural, optical and intraband absorption properties of vertically aligned In0.32Ga0.68As/GaAs quantum dots superlattices

The self-organization growth of In0.32Ga0.68As/GaAs quantum dots (QDs) superlattices is investigated by molecular beam epitaxy. It is found that high growth temperature and low growth rate are favorable for the formation of perfect vertically aligned QDs superlattices. The aspect ratio (height versus diameter) of QD increases from 0.16 to 0.23 with increase number of bi-layer. We propose that this shape change play a significant role to improve the uniformity of QDs superlattices. Features in the variable temperature photoluminescence characteristics indicate the high uniformity of the QDs. Strong infrared absorption in the 8-12 mum was observed. Our results suggest the promising applications of QDs in normal sensitive infrared photodetectors. (C) 2001 Elsevier Science B.V. All rights reserved.

Electronic characteristics of InAs self-assembled quantum dots

Deep-level transient spectroscopy and photoluminescence studies have been carried out on structures containing self-assembled InAs quantum dots formed in GaAs matrices. The use of n- and p-type GaAs matrices allows us to study separately electron and hole levels in the quantum dots by the deep-level transient spectroscopy technique. From analysis of deep-level transient spectroscopy measurements it follows that the quantum dots have electron levels 130 meV below the bottom of the GaAs conduction band and heavy-hole levels at 90 meV above the top of the GaAs valence band. Combining with the photoluminescence results, the band structures of InAs and GaAs have been determined. (C) 2000 Elsevier Science B.V. All rights reserved.

Room-temperature microwave oscillation in AlAs/GaAs superlattices

Room-temperature microwave (MW) oscillations are observed in GaAs/AlAs (10 nm/2 nm) doped weakly coupled superlattices (SLs) in the first plateau of the I-V curve. Oscillations induced by sequential resonant tunneling are detected in a temperature range from 15 to 300 K by applying DC bias on the Si, diodes. The temperature dependence of current at small fixed bias voltage is also measured. Through analysis, it is found that the dominant transport mechanisms are sequential resonant tunneling and phonon-assisted tunneling when the temperature is below 300 K. The low bias voltage at which oscillations are realized is helpful to restrain thermionic emission through the X valley of AlAs barriers in the room-temperature transport. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

Numerical evaluation of energy loss rate for hot carriers in quantum wells

Using the Frohlich potential associated with realistic optical phonon modes in quantum well systems, the energy loss rates of hot electrons, holes, and electron-hole pairs are calculated, with special emphasis on the effects of carrier density, hot phonon population, quantum well width, and phonon dispersion on the hot-carrier relaxation process in quasi-two-dimensional systems. (C) 1998 Academic Press Limited.

Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density

We have investigated temperature dependent photoluminescence of both buried and surface self-assembled InAs/GaAs quantum dots with an areal density up to similar to 10(11)/cm(2). Different from the buried quantum dots, the peak energy of surface quantum dots shows a blueshift relative to the bulk material variation from 15 to 130K. Besides the line width and the integrated intensity both first decrease and then increase in this temperature interval. The observed phenomena can be explained by carrier trapping effects by some shallow localized centers near the surface quantum dots.

多粒度多维度软件过程度量和改进方法研究

随着软件对社会各领域、各层次的渗透，软件逐渐转变为一种对社会团体、 甚至对社会公众的服务，软件的规模越来越大、用户需求越来越多、功能和性能 要求也越来越复杂。因此，对软件的可用性、可靠性、可信性等质量要求不断提 高。伴随着软件业的逐渐发展，软件过程技术逐渐被应用于软件产品的开发当中。 “质量形成于产品的生产过程”这一理念逐渐被软件组织所接受。其核心思想体 现在通过对软件过程的策划、控制和改进来保证软件产品的质量，进而提高软件 组织的经营业绩。软件过程度量作为软件过程管理和过程改进的关键活动，越来 越为软件组织所重视。 通过实施过程管理，能够刻画项目或过程目标的满足程度，找到造成过程 或产品重大偏差的根本原因，进而实施过程改进。然而，在软件过程度量实施期 间，软件组织面对不同的软件开发过程、众多的过程性能度量指标、复杂的统计 分析方法，既要考虑量化管理方法的合理性和复杂程度，又要权衡量化管理的实 施成本，这使得实施有效的过程度量充满挑战。本文基于经验软件工程方法，提 出一种多粒度多维度软件过程度量框架，以及实现该框架的关键技术：软件过程 性能基线的建立和维护方法；同时介绍了该框架下的软件项目进度量化控制模 型，支持软件组织实施有效的过程管理和改进。 本文的主要贡献包括： 提出了一种多粒度多维度软件过程度量框架(Multi-granularity Multi-dimensional software Process Measurement Framework，M2-PMF)，该框架通 过综合考虑软件过程管理和改进的必要信息所属的特征维度和软件组织的过程 管理粒度，自底向上的通过实体层、度量分析层和目标层指导软件组织建立一套 可以覆盖软件全生命周期的、开放的、支持过程改进的综合指标体系和模型。支 持软件组织裁减和定制确定环境下的度量体系，清晰了解其软件过程能力和性 能，提高软件组织对软件过程的控制能力，保障软件开发过程和软件产品的质量。 提出了基于统计分析的过程性能基线的建立和改进方法（Baseline – Statistic - Refinement， BSR），该方法可以有效地建立和维护过程性能基线，支持软件 组织从定性管理提升到定量管理。该方法应用波动图，在过程尚不稳定、数据样 本不足的情况下尽可能多的获得过程改进信息，识别过程改进机会，确定过程改 进途径，帮助软件组织高效地改进其过程中明显的弱项。在过程逐步稳定之后， 利用控制图、排列图、因果图、散点图等统计工具，分析过程性能，建立过程性 多粒度多维度软件过程度量和改进方法研究 ii 能基线，并不断精化。 在M2-PMF 框架下，提出了基于统计过程控制（Statitical Process Control， SPC）和挣值管理（Earned Value Management，EVM）的项目进度量化控制模型 SEVM，该方法通过对项目进度指数的统计控制，分析其稳定性，并通过估算模 型，根据项目当前挣值数据推算项目总进度偏差，并加以控制。支持软件组织对 项目进度进行量化控制，提高了项目按期交付的可能性。 最后，介绍了本文提出的过程度量框架和量化管理方法在国内多家软件组 织中的实际应用。应用案例表明，本文的方法和模型具有广泛的适应性和高度的 可操作性。应用本文方法能够对项目进行有效的估算、度量和控制，进而提高产 品质量并改善客户满意度。

Magnetic frustration induced quantum phase transitions in the S=1/2 vertically asymmetric diamond chain

This work was supported by the National Basic Research Program of China (973 Program) grant No. G2009CB929300 and the National Natural Science Foundation of China under Grant Nos. 60521001 and 60776061.

Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE

Surface morphology and optical properties of 1.3 mum self-organized InGaAs/GaAs quantum dots structure grown by molecular beam epitaxy have been investigated by atomic force microscopy and photoluminescence measurements. It has been shown that the surface morphology evolution and emission wavelengths of InGaAs/GaAs QDs can be controlled effectively via cycled monolayer deposition methods due to the reduction of the surface strain. Our results provide important information for optimizing the epitaxial parameters for obtaining 1.3 mum long wavelength emission quantum dots structures. (C) 2002 Elsevier Science B.V. All rights reserved.