Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates

Initial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in situ scanning tunneling microscopy. Comparison is made between growth on nominally flat and vicinal substrate surfaces and the results reveal characteristic differences between the two. Ex situ transmission electron microscopy (TEM) and X-ray diffraction (XRD) rocking curve measurements of the films show lower density of defects and better structural quality of the vicinal film. We suggest the improved structural quality of the vicinal film is related to the characteristic difference in its initial stage nucleation and coalescence proccsses than that of the flat film.

The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy

Single crystal GaN films have been grown on to an Al2O3 coated (001)Si substrate in a horizontal-type low-pressure MOVPE system. A thin Al2O3 layer is an intermediate layer for the growth of single crystal GaN on to Si although it is only an oriented polycrystal him as shown by reflection high electron diffraction. Moreover, the oxide was not yet converted to a fully single crystal film, even at the stage of high temperature for the GaN overlayer as studied by transmission electron microscopy. Double crystal X-ray diffraction showed that the linewidth of (0002) peak of the X-ray rocking curve of the 1.3 mu m sample was 54 arcmin and the films had heavy mosaic structures. A near band edge peaking at 3.4 eV at room temperature was observed by photoluminescence spectroscopy. (C) 1998 Elsevier Science B.V. All rights reserved.

Wurtzite GaN epitaxial growth on a Si(001) substrate using gamma-Al2O3 as an intermediate layer

Wurtzite GaN films have been grown on (001) Si substrates using gamma-Al2O3 as an intermediate layer by low pressure (similar to 76 Torr) metalorganic chemical vapor deposition. Reflection high energy electron diffraction and double crystal x-ray diffraction measurements revealed that the thin gamma-Al2O3 layer of "compliant" character was an effective intermediate layer for the GaN film grown epitaxially on Si. The narrowest linewidth of the x-ray rocking curve for (0002) diffraction of the 1.3 mu m GaN sample was 54 arcmin. The orientation relationship of GaN/gamma-Al2O3/Si was (0001) GaN parallel to(001) gamma-Al2O3 parallel to(001) Si, [11-20] GaN parallel to[110] gamma-Al2O3 parallel to[110] Si. The photoluminescence measurement for GaN at room temperature exhibited a near band-edge peak of 365 nm (3.4 eV). (C) 1998 American Institute of Physics.

Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition

Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get high quality 4H-SiC epilayers. Homoepitaxial growth of 4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates purchased from Cree is performed at a typical temperature of 1500 degrees C with a pressure of 40 Torr by using SiH4+C2H4+H-2 gas system. The surface morphologies and structural and optical properties of 4H-SiC epilayers are characterized with Nomarski optical microscope, atomic force microscopy (AFM), x-ray diffraction, Raman scattering, and low temperature photoluminescence (LTPL). The background doping of 32 pm-thick sample has been reduced to 2-5 x 10(15) cm(-3). The FWHM of the rocking curve is 9-16 arcsec. Intentional N-doped and B-doped 4H-SiC epilayers are obtained by in-situ doping of NH3 and B2H6, respectively. Schottky barrier diodes with reverse blocking voltage of over 1000 V are achieved preliminarily.

Growth and characterization of semi-insulating GaN films grown by MOCVD

High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arc-min, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 degrees C was measured to be approximate 10(9) and 10(6) Omega(.)cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.

Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy

ZnTe epilayers were grown on GaAs(0 0 1) substrates by molecular beam epitaxy (MBE) at different VI/II beam equivalent pressure (BEP) ratios (R-VI/II) in a wide range of 0.96-11 with constant Zn flux. Based on in situ reflection high-energy electron diffraction (RHEED) observation, two-dimensional (2D) growth mode can be formed by increasing the R-VI/II to 2.8. The Te/Zn pressure ratios lower than 4.0 correspond to Zn-rich growth state, while the ratios over 6.4 correspond to Te-rich one. The Zn sticking coefficient at various VI/II ratios are derived by the growth rate measurement. The ZnTe epilayer grown at a R-VI/II of 6.4 displays the narrowest full-width at half-maximum (FWHM) of double-crystal X-ray rocking curve (DCXRC) for (0 0 4) reflection. Atomic force microscopy (AFM) characterization shows that the grain size enlarges drastically with the R-VI/II. The surface root-mean-square (RMS) roughness decreases firstly, attains a minimum of 1.14 nm at a R-VI/II of 4.0 and then increases at higher ratios. It is suggested that the most suitable R-VI/II be controlled between 4.0 and 6.4 in order to grow high-quality ZnTe epitaxial thin films.

Growth of GaAs on Si by using a thin Si film as buffer layer

We report a novel technique for growing high-quality GaAs on Si substrate. The process involves deposition of a thin amorphous Si film prior to the conventional two-step growth. The GaAs layers grown on Si by this technique using metalorganic chemical vapor deposition exhibit a better surface morphology and higher crystallinity as compared to the samples gown by conventional two-step method. The full width at half maximum (FWHM) of the x-ray (004) rocking curve for 2.2 mu m thick GaAs/Si epilayer grown by using this new method is 160arcsec. The FWHM of the photoluminescence spectrum main peak for this sample is 2.1 meV. These are among the best results reported so far. In addition, the mechanism of this new growth method was studied using high-resolution transmission electron microscopy.

Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes

Studies on first GaN-based blue-violet laser diodes(LDs) in China mainland are reported.High quality GaN materials as well as GaN-based quantum wells laser structures are grown by metal-organic chemical vapor deposition method.The X-ray double-crystal diffraction rocking curve measurements show the full-width half maximum of 180" and 185" for (0002) symmetric reflection and (10(-1)2) skew reflection,respectively.A room temperature mobility of 850cm2/(V·s) is obtained for a 3μm thick GaN film.Gain guided and ridge geometry waveguide laser diodes are fabricated with cleaved facet mirrors at room temperature under pulse current injection.The lasing wavelength is 405.9nm.A threshold current density of 5kA/cm2 and an output light power over 100mW are obtained for ridge geometry waveguide laser diodes.

Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth

Argon gas, as a protective environment and carrier of latent heat, has an important effect on the temperature distribution in crystals and melts. Numeric simulation is a potent tool for solving engineering problems. In this paper, the relationship between argon gas flow and oxygen concentration in silicon crystals was studied systematically. A flowing stream of argon gas is described by numeric simulation for the first time. Therefore, the results of experiments can be explained, and the optimum argon flow with the lowest oxygen concentration can be achieved. (C) 2002 Elsevier Science B.V. All rights reserved.

Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates

Initial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in situ scanning tunneling microscopy. Comparison is made between growth on nominally flat and vicinal substrate surfaces and the results reveal characteristic differences between the two. Ex situ transmission electron microscopy (TEM) and X-ray diffraction (XRD) rocking curve measurements of the films show lower density of defects and better structural quality of the vicinal film. We suggest the improved structural quality of the vicinal film is related to the characteristic difference in its initial stage nucleation and coalescence proccsses than that of the flat film.

Linear spatio-temporal instability analysis of ice growth under a falling water film

A linear spatio-temporal stability analysis is conducted for the ice growth under a falling water film along an inclined ice plane. The full system of linear stability equations is solved by using the Chebyshev collocation method. By plotting the boundary curve between the linear absolute and convective instabilities (AI/CI) of the ice mode in the parameter plane of the Reynolds number and incline angle, it is found that the linear absolute instability exists and occurs above a minimum Reynolds number and below a maximum inclined angle. Furthermore, by plotting the critical Reynolds number curves with respect to the inclined angle for the downstream and upstream branches, the convectively unstable region is determined and divided into three parts, one of which has both downstream and upstream convectively unstable wavepackets and the other two have only downstream or upstream convectively unstable wavepacket. Finally, the effect of the Stefan number and the thickness of the ice layer on the AI/CI boundary curve is investigated.

Thermokinetic investigation of effect of temperature on optimum NaCl concentration for petroleum bacterial growth

The power-time curves of growth of three strains of petroleum bacteria at different NaCl concentrations at 40.0 and 50.0 degreesC have been determined by using a 2277 Thermometric Thermal Activity Analyser. An equation of a power-time curve, ln[alphaP(K)/P(t) - 1] = ln[(alphaK - N-0)/N-0] - alphakt, was established based on the generalized logistic equation, where P(t) is the thermal power at time t, K the carrying capacity, P-K = P0K, P-0 the thermal power of one cell, N-0 the bacterial population at time zero, alpha = (k - D)/k. The method of four observed points with the same time interval was used to calculate the value of P-K. The growth rate constant k and the death rate constant D were calculated. The NaCl concentration of optimum growth rate of petroleum bacteria at 40.0 and 50.0 degreesC, respectively, have been obtained according to the curves k - D versus NaCl concentration, which are 0.26, 0.54 and 0.57 mol l(-1) for B-1, B-2 and B-3, respectively, at 50.0 degreesC, 0.26, 0.55 and 0.56 mol l(-1) for B-1, B-2 and B-3, respectively, at 40.0 degreesC. The results indicated that the effect of temperature on NaCl concentration of optimum growth rate was small. (C) 2002 Elsevier Science B.V. All rights reserved.

Environmental Kuznets Curve for SO_2 Emissions in China

This study examines the link between the economic growth and the environmental quality. Based on a panel data set, a N-shaped Environmental Kuzents Curve has been found for the sample period: a cubic relationship between per capita GDP and emissions of sulphur dioxide (SO2). We also find that energy consumption is an important determinant of environmental degradation. The empirical results suggest that we should promote environmental protection as soon as possible.

Feeding level-scaled retention efficiency, growth and energy partitioning of a marine detritivorous fish, redlip mullet (Liza haematocheila T. & S.)

The effects of feeding level on growth, retention efficiency, faeces production and energy partitioning of redlip mullet were studied. A practical diet was used and fed at six levels from starvation, 1%, 2%, 3%, 4% of body weight (BW) to satiation for 3 weeks. The temperature was kept at 24 +/- 1 degrees C. Reducing the feeding amount resulted in significantly lower weight gain, and retention efficiency was significantly affected by feeding levels and attained the maximum at maximum feeding intake. Feeding 2% BW was the minimum required for fish to maintain growth. Fish carcass composition under different feeding levels could be divided into three groups: (1) starvation and FL1; (2) FL2 and FL3 and (3) FL4 and satiation, with significant differences among the groups but no differences in the groups except that ash content remained at constant value. Body composition of fish of group 2 was close to initial fish. The thermal-unit coefficient was 0.0381 at satiation, and significantly increased with increasing feeding levels. In order to accurately estimate basal metabolism (HeE), another trial on the relationship between HeE (kJ) and BW (g) was carried out. An exponential curve as HeE=0.1255BW(0.8386) explained this relationship. Intake energy (IE) increased from 11.30 to 63.08 kJ per fish, matching with different feeding levels. Energy allocated to growth of IE decreased with reducing feeding amount. There was a linear relationship between metabolism energy and retention energy in percentage.

Modeling of protein adsorption in membrane affinity chromatography

For the design of affinity membranes, protein adsorption in membrane affinity chromatography (MAC) was studied by frontal analysis. According to fast mass transfer, small thickness of affinity membranes and high affinity between the protein and the ligand, an ideal adsorption (IA) model was proposed for MAC and was used together with equilibrium-dispersive (E-D) model to describe the adsorption of bovine serum albumin (BSA) onto cellulose diacetate/polyethyleneimine (CA/PEI) blend membranes with and without Cu2+ chelating. E-D model was found to better describe the initial region of experimental breakthrough curves. The influence of axial dispersion was revealed and it showed the importance of design of the module to homogenously distribute feed solution. IA model was found to be better for the whole experimental breakthrough curve. According to it, the capacity of affinity membranes and the specificity of the interaction are of equal importance for the design of affinity membranes. An optimum feed concentration was also found in the operation of MAC. The discrepancy between experimental optimum feed concentrations and predicted ones from IA model may be due to the ignorance of some experimental effects such as axial dispersion.