132 resultados para epididymis tail


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Microcystin-LR, a specific and potent hepatotoxin, was tested for its effects oil loach embryo-larval and juvenile development, The results of this study showed that loach embryos were more sensitive when exposed to microcystin-LR at a later than at an earlier stage of development, Juveniles were far less sensitive to MC-LR than were embryos and larvae. Mortality and developmental abnormality were proven to be dose-dependent and to be stage-specific sensitive. Among the abnormal changes noted were: pericardial edema and tubular heart, bradycardia, homeostasis, poor yolk resumption. small head, curved body and tail, and abnormal hatching, Liver and heart were the main targets of microcystin-LR toxicity. Ultrastructural analysis documented a complex set of sublethal effects of microcystin-LR on loach hepatocytes, chiefly including morphological alteration in nuclear and RER of loach liver cells. fit addition, microcystin-LR was lethal to loach juvenile in the subacute (7 days) exposure (LC50) = 593.3 mug/l). (C) 2002 Elsevier Science Ltd. All rights reserved.

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Penaeid shrimp is the natural host of White Spot Syndrome Virus (WSSV) that can cause high mortality in the infected hosts. Attempts to obtain sufficient amounts of purified intact WSSV for characterization have been unsuccessful. Using crayfish, Cambarus clarkii as a proliferation system, a large amount of infectious WSSV was reproduced and intact WSSV viral particles were purified with a new isolation medium by ultra-centrifugation. Purified WSSV particles were very sensitive to organic solvents and the detergent, Triton X-100. The size of the rod-shape, somewhat elliptical, intact WSSV was 110-130 x 260-350 mm with a long, tail-like envelope extension. The naked viral nucleocapsid was about 80 x 350 nm, and it possessed 15 spiral and cylindrical helices composed of 14 globular capsomers along its long axis, and a 'ring' structure at one terminus. Distinct WSSV genome DNA patterns were obtained when the purified genomic dsDNA of WSSV was digested with five different restriction enzymes (HindIII, XhoI, B(BamHI, SalI, and SacI). In addition, at least 13 major and distinct protein bands could be observed when purified intact WSSV viruses were separated by SDS-PAGE followed by Coomassie Brilliant R-250 staining. The estimated molecular weights of these proteins were 190, 84, 75, 69, 68, 58, 52, 44, 28, 27.5, 23, 19, and 16 kD, respectively. Both the 44 and 190 kD proteins were easily removed if the hemolymph from the: WSSV infected crayfish was transiently treated with 1%, Triton X-100 before it was subjected to gradient centrifugation, indicating that both of them are located on the surface of the viral envelope. These characteristics are consistent with WSSV isolated from the penaeid shrimp. (C) 2001 Elsevier Science B.V. All rights reserved.

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The transcriptional onset of hGH-transgene in fish was studied in the following three cases: the first is in MThGH-transgenic F-4 common carp (Cyprinus carpio) embryos, the second is in nuclear-transferred embryos supported by the transgenic F-4 embryonic nuclei, and the third is in nuclear-transferred embryos supported by the transgenic F-4 tail-fin nuclei. RT-PCR results show that the hGH-transgene initiates its transcriptional activity from early-gastrula stage, the early blastula stage and even 16-cell stage in the first, second and third cases, respectively. it looks like that fish egg cytoplasm could just offer a very restricted reprogramming on transcriptional activity of specific gene in differentiated cell nuclei by nuclear transplantation.

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Si-doped ZnO can be synthesized on the surface of the early grown Zn2SiO4 nanostructures and form core/ shell coaxial heterostructure nanobelts with an epitaxial orientation relationship. A parallel interface with a periodicity array of edge dislocations and an inclined interface without dislocations can be formed. The visible green emission is predominant in PL spectra due to carrier localization by high density of deep traps from complexes of impurities and defects. Due to band tail localization induced by composition and defect fluctuation, and high density of free-carriers donated by doping, especially the further dissociation of excitons into free-carriers at high excitation intensity, the near-band-edge emission is dominated by the transition of free-electrons to free-holes, and furthermore, exhibits a significant excitation power-dependent red-shift characteristic. Due to the structure relaxation and the thermalization effects, carrier delocalization takes place in deep traps with increasing excitation density. As a result, the green emission passes through a maximum at 0.25I(0) excitation intensity, and the ratio of the violet to green emission increases monotonously as the excitation laser power density increases. The violet and green emission of ZnO nanostructures can be well tuned by a moderate doping and a variation in the excitation density.

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Electron mobility limited by nitrogen vacancy scattering was taken into account to evaluate the quality of n-type GaN grown by metal-organic vapor phase epitaxy. Two assumptions were made for this potential for the nitrogen vacancy (1) it acts in a short range, and (2) does not diverge at the vacancy core. According to the above assumptions, a general expression to describe the scattering potential U(r) = - U-0 exp[- (r/beta)(n)], (n = 1, 2,...,infinity) was constructed, where beta is the potential well width. The mobilities for n = 1, 2, and infinity were calculated based on this equation, corresponding to the simple exponential, Gaussian and square well scattering potentials, respectively. In the limiting case of kbeta << 1 (where k is the wave vector), all of the mobilities calculated for n = 1, 2, and infinity showed a same result but different prefactor. Such difference was discussed in terms of the potential tail and was found that all of the calculated mobilities have T-1/2 temperature and beta(-6) well width dependences. A mobility taking account of a spatially complicate scattering potential was studied and the same temperature dependence was also found. A best fit between the calculated results and experimental data was obtained by taking account of the nitrogen vacancy scattering. (C) 2002 Elsevier Science Ltd. All rights reserved.

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Temperature-dependent photoluminescence measurements have been carried out in zinc-blende InGaN epilayers grown on GaAs substrates by metalorganic vapor-phase epitaxy. An anomalous temperature dependence of the peak position of the luminescence band was observed. Considering thermal activation and the transfer of excitons localized at different potential minima, we employed a model to explain the observed behavior. A good agreement between the theory and the experiment is achieved. At high temperatures, the model can be approximated to the band-tail-state emission model proposed by Eliseev et al. [Appl. Phys. Lett. 71, 569 (1997)]. (C) 2001 American Institute of Physics.

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In situ ultra high vacuum scanning probe microscopy (SPM) and low-temperature :photoluminescence (PL) studies have been performed on Si-doped self-organized InAs/GaAs quantum dots samples to investigate the Si doping effects. Remarkably, when Si is doped in the sample, according to the SPM images, more small dots are formed when compared with images from undoped samples. On the PL spectra, high-energy band tail which correspond to the small dots appear, with increasing doping concentration, the integral intensity of the high-energy band tail account for the whole peak increase too. We relate this phenomenon to a model that takes the Si atom as the nucleation center for QDs formation. (C) 1999 Elsevier Science B.V. All rights reserved.

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A monolithic silicon CMOS optoelectronic integrated circuit (OEIC) was designed and fabricated with standard 0.6 mu m CMOS technology. This OEIC circuit consisted of an integrated double photodiode detector (DPD) and a preamplifier. The DPD detector exhibited high bandwidth by screening the bulk-generated diffusion carriers and suppressing the slow diffusion tail effect. The preamplifier exploited the regulated cascode (RGC) configuration as the input stage of receiver, thus isolating the influence of photodiode capacitance and input parasitic capacitance on bandwidth. Testing results showed that the bandwidth of OEIC was 700MHz, indicating the bit rate of 1Gb/s was achieved.

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Three types of defects, namely defect I, defect 11, defect 111, in the 4H-SiC homoepilayer were investigated by micro-raman scattering measurement. These defects all originate from a certain core and are composed of (1) a wavy tail region, (11) two long tails, the so called comet and (111) three plaits. It was found that there are 3C-SiC inclusions in the cores of defect 11 and defect III and the shape of inclusion determines the type of defect II or defect III. If the core contains a triangle-shaped inclusion, the defect III would be formed; otherwise, the defect 11 was formed. No inclusion was observed in the core of the defect I. The mechanisms of these defects are discussed.

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本文针对难度最大的两类命名实体(地名和机构名)在条件随机场框架下首次引入了小规模的常用尾字特征.实验表明,该特征与词类特征具有一定的互补性,联合使用可以以较小的训练代价显著提高专有名词的识别性能,特别是机构名的识别精度.该系统在我国863简体命名实体识别评测语料上专名(人名、地名和机构名)总体F1值达踞.76%,超过当年最佳系统8.63个百分点.在SIGHAN 2006命名实体识别语料上的结果也居于前列.

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以过氧化二异丙苯(DCP)为引发剂,甲基丙烯酸缩水甘油醋(GMA)为活性单体对HIPS进行熔融接枝,制得了功能化的高抗冲苯乙烯(HIPS-g-GMA)。比较HIPS-g-GMA和纯的HIPS的红外谱图,可以看到在HIPS-g-GMA的谱图上出现了一个新的吸收峰,即1730cm~(-1)处的C=O的伸缩振动吸收峰,它为接枝的GMA中的醋基基团的特征峰,因此可以确定GMA己经接枝到HIPS上。能谱分析也提供了相似的结论。同时研究了单体浓度和DCP用量对产物接枝率的影响。用化学滴定方法测定了接枝物的接枝率。随着GMA量的增加,接枝率也随之增加,当GMA用量超过14%时,接枝率趋于平缓;接枝率随DCP量增加而增加。采用DSC、SEM, WAXD, DMA及力学性能等方法和手段研究PBTIHIPS和PBT/HIPS-g-GMA二元共混体系的结晶、形态结构、动态力学性能及力学性能随组成的变化。当PBT为分散相,在增容体系中的PBT出现了分级结晶现象,结晶温度降低,这是由于分散相更为精细的结果。DMA结果表明,在PBTIHIP S-g-GMA体系中由于发生了化学反应,有接枝共聚物生成,体系中两个聚合物的Tg松弛均出现了较明显的降低,增容后体系的力学性能有显著提高。采用DSC, SEM, DMA及力学性能等方法和手段研究PBT/HIPS/HIPS-g-GMA三元共混体系的结构与性能。结果表明PBT无论是分散相还是连续相,HIPS-g-GMA的作用表现为:(1)对PBTIHIPS体系的熔融和结晶行为产生了明显的影响,使PBT的结晶速率变慢,结晶度降低,结晶尺寸分布变宽,结晶完善性变差;(2)改善了共混体系的相容性。未增容体系的形态结构为锐型界面,分散相粒子同基材相连接处清晰缝隙表明两组分间界面粘接很差,为典型的不相容两相形态结构;而加入功能化接枝物的体系的分散相粒子明显变小且分布均匀,甚至难以分辨两相结构的界面;(3)提高了体系的力学性能。在多官能团单体存在下,辐照对PBTIHIPS产生影响。(1)对共混体系的熔融和结晶行为产生影响,使共混体系中的PBT的熔点降低,熔程变宽,结品度下降,结晶速率变慢,结晶尺寸分布变宽,结晶完善性变差;(2)辐射引发多官能团单体反应,使体系的两个Tg松弛发生内移,表明体系的相容性得到改善;(3)当PBT为连续相时,辐射引发的多官能团单体反应对体系的形态结构影响不如化学增溶剂HIPS-g-GMA的效果显著,含有TMPTA的体系的形态结构要好于TAIL o当PBT为分散相,体系的形态结构变化很大,分散相尺寸明显变下小,且分布均匀;(4)辐射改性能提高PBT为分散相的共混体系的力学性能。利用DSC研究了不同成核剂对生物降解聚合物PHBV的结晶性能的彩响。结果表明:(1)添加的成核剂均能影响PHBV的结晶和熔融行为,提高PHBV的结晶速率和使PHBV的结晶更加完美;(2)所有的成核剂均能降低PHBV的结晶自由能;(3)成核剂对PHBV的影响依次为BN, talc, Tb_2O_3和La_2O_3。

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为解决供体器官的不足,以细胞移植为基础的替代疗法已成为治疗不可逆肝 脏疾病新的希望。 肝前体(干)细胞(Hepatic progenitor cellS,HPCs)和 胚胎干细胞(embryoic stem cells, ES)由于其特殊的细胞特性已成为细胞替 代治疗理想的种源细胞。 然而一方面包括人在内的灵长类动物的正常成体肝来 源的HPCs 的分离依然是很困难的;另一方面,ES 细胞来源的肝细胞和胆管细胞 的生成效率依旧很低。因此有必要建立稳定的高效的灵长类动物HPCs 细胞分离 培养体系及ES 细胞的肝细胞或胆管细胞分化体系以满足供体细胞的不足;这种 体系的建立还有利于研究肝细胞生物学如分化机制、自我更新机制等方面的重要 基础问题。 本研究以猕猴为实验模型,研究了正常成体肝来源的猕猴HPCs 分离、纯化 的条件,系统地鉴定了猕猴HPCs 的细胞特性和体内、外分化潜能,并评价了体 内移植效果。 同时以rES 为材料,建立了rES 高效分化为限定性内胚层 (definitive endoderm cells, DE)和胆管上皮细胞的分化体系。主要实验结 果包括:1): FBS、EGF、HGF 及rat tail collagen (鼠尾胶原)是分离培养正 常成体猕猴来源的肝上皮前体细胞(rhesus monkey liver epithelial progenitor cells, mLEPCs)所必需的,mLEPCs 在此培养体系中至少可以扩增20 代或5 个月以上,并仍然保持原有的细胞特性;mLEPCs 呈现典型的上皮细胞形 态,并表达HPCs 细胞特有的表达模式即同时表达肝细胞和胆管细胞相关基因 (ALB,APOH,CX43,IB4)或蛋白(CK7,CK8,CK18);在适宜的分化体系下, mLEPCs 可分化为功能性的肝细胞,形成具有胆管上皮细胞的胆管样结构,并能 转分化形成肌肉样细胞、肌样成纤维细胞及少突样细胞;移植入肝损伤的免疫抑 制的小鼠体内后,mLEPCs 能参与受体肝组织的再生,并能分化成ALB 阳性的肝 细胞;体内定位发现mLEPCs 与胆管区的细胞有相似的免疫原性,提示mLEPCs 可能来源于胆管区。2):rES 在高浓度的acitvin A(100ng/ml)和低浓度的血 清(1%)单层诱导体系下可定向分化得到高比率的限定性内胚层细胞(definitive endoderm cells,DE 细胞)(约80%); 高比率的DE 细胞的得到还与rES 细胞的接种密度相关;BMP4 和FGF1 可诱导DE 细胞高效向胆管上皮细胞分化(约90%), 但并不能得到肝细胞;而Notch 信号通路可维持DE 细胞的存活,并决定着DE 细胞向胆管细胞分化,在Notch 信号通路失活的情形下,即使存在BMP4 和FGF1 都不能促使DE 细胞向胆管细胞分化。 本实验首次成功建立了正常猕猴成体肝HPCs 分离培养体系,证实了分离得 到的猕猴肝上皮前体细胞不但具有正常HPCs 的增殖活力和参与受体肝组织的再 生能力,而且还具有三个胚层的分化潜能,这一结果将为以HPCs 为基础的细胞 替代治疗人类肝脏疾病的实现提供了可能,并首次证明了HPCs 也可以像某些少 数成体干细胞一样具有三个胚层得分化潜能。 此外,本研究建立了rES 高效定 向分化为DE 细胞和胆管细胞的分化体系,这一方法的建立将促进灵长类动物的 DE 细胞的发育机制研究,同时也可为高比率的内胚层功能细胞(如胰岛细胞、 肝细胞、肺细胞)的获得提供丰富的种源细胞和平台。

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Ultraviolet and X-ray photoemission spectroscopies (UPS and XPS) have been employed to SnO2 and its interface with P-type a-SiCx:H. The HeI valence band spectra of SnO2 show that the valence band maximum (VBM) shifts from 4.7 eV to 3.6 eV below the Fermi level (E(F)), and the valence band tail (VBT) extends up to the E(F), as a consequence of H-plasma treatments. The work function difference between SnO2 and P a-SiCx:H is found to decrease from 0.98 eV to 0.15 eV, owing to the increase of the work function of the treated SnO2. The reduction of SnO2 to metallic Sn is also observed by XPS profiling, and it is found that this leads to a wider interfacial region between the treated SnO2 and the successive growth of P a-SiCx:H.

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The effect of metastable defects caused by light soaking and carrier injection on the transport of carriers in undoped a-Si:H has been investigated by a junction recovery technique. The experiments show that after light soaking or carrier injection the product of mu-p-tau-p decreases, but no detectable change in the distribution of shallow valence band tail states was found.

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Optical properties of ordered Ga0.5In0.5P epitaxial layers grown by metalorganic vapor phase epitaxy are investigated by photoluminescence (PL) in a temperature range of 10-200 K using excitation power densities between 0.35 W/cm(2) and 20 W/cm(2). It is found that the intensity of the highest-energy PL peak of the ordered Ga0.5In0.5P epilayer decreases first, then increases and finally goes down again with increasing temperature. A model of ordered Ga0.5In0.5P epitaxial layers is proposed, in which the ordered Ga0.5In0.5P epilayer is regarded as a type-II quantum well structure with band-tail states, and the dependence of PL spectra on the temperature and excitation intensity is reasonably explained. (C) 1995 American Institute of Physics.