A 1Gb/s silicon photo-receiver in standard CMOS for 850-nm optical communication
| Data(s) |
2007
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| Resumo |
A monolithic silicon CMOS optoelectronic integrated circuit (OEIC) was designed and fabricated with standard 0.6 mu m CMOS technology. This OEIC circuit consisted of an integrated double photodiode detector (DPD) and a preamplifier. The DPD detector exhibited high bandwidth by screening the bulk-generated diffusion carriers and suppressing the slow diffusion tail effect. The preamplifier exploited the regulated cascode (RGC) configuration as the input stage of receiver, thus isolating the influence of photodiode capacitance and input parasitic capacitance on bandwidth. Testing results showed that the bandwidth of OEIC was 700MHz, indicating the bit rate of 1Gb/s was achieved. A monolithic silicon CMOS optoelectronic integrated circuit (OEIC) was designed and fabricated with standard 0.6 mu m CMOS technology. This OEIC circuit consisted of an integrated double photodiode detector (DPD) and a preamplifier. The DPD detector exhibited high bandwidth by screening the bulk-generated diffusion carriers and suppressing the slow diffusion tail effect. The preamplifier exploited the regulated cascode (RGC) configuration as the input stage of receiver, thus isolating the influence of photodiode capacitance and input parasitic capacitance on bandwidth. Testing results showed that the bandwidth of OEIC was 700MHz, indicating the bit rate of 1Gb/s was achieved. zhangdi于2010-03-29批量导入 zhangdi于2010-03-29批量导入 IEEE Electron Devices Soc. Tsinghua Univ Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China IEEE Electron Devices Soc. Tsinghua Univ |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
IEEE 345 E 47TH ST, NEW YORK, NY 10017 USA |
| Fonte |
Huang, BJ (Huang, Beiju); Zhang, X (Zhang, Xu); Liu, HJ (Liu, Haijun); Liu, JB (Liu, Jinbin); Dai, XG (Dai, Xiaoguang); Zhang, Y (Zhang, Yu); Chen, HD (Chen, Hongda) .A 1Gb/s silicon photo-receiver in standard CMOS for 850-nm optical communication .见：IEEE .2007 International Workshop on Electron Devices and Semiconductor Technology,345 E 47TH ST, NEW YORK, NY 10017 USA ,2007,198-201 |
| Palavras-Chave | #光电子学 #complementary metal-oxide-semiconductor (CMOS) |
| Tipo |
会议论文 |
