Micro-raman investigation of defects in a 4H-SiC homoepilayer

Three types of defects, namely defect I, defect 11, defect 111, in the 4H-SiC homoepilayer were investigated by micro-raman scattering measurement. These defects all originate from a certain core and are composed of (1) a wavy tail region, (11) two long tails, the so called comet and (111) three plaits. It was found that there are 3C-SiC inclusions in the cores of defect 11 and defect III and the shape of inclusion determines the type of defect II or defect III. If the core contains a triangle-shaped inclusion, the defect III would be formed; otherwise, the defect 11 was formed. No inclusion was observed in the core of the defect I. The mechanisms of these defects are discussed.

Three types of defects, namely defect I, defect 11, defect 111, in the 4H-SiC homoepilayer were investigated by micro-raman scattering measurement. These defects all originate from a certain core and are composed of (1) a wavy tail region, (11) two long tails, the so called comet and (111) three plaits. It was found that there are 3C-SiC inclusions in the cores of defect 11 and defect III and the shape of inclusion determines the type of defect II or defect III. If the core contains a triangle-shaped inclusion, the defect III would be formed; otherwise, the defect 11 was formed. No inclusion was observed in the core of the defect I. The mechanisms of these defects are discussed.

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II VI Inc.; III Vs Review.; Cree Inc.; Compound Semicond.; Dow Corning Compound Semicond Solut.; LPE.; Norstel AB.; SemiSouth.; SiCED.; SiCrystal.; Surface Technol Syst plc.

Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China

II VI Inc.; III Vs Review.; Cree Inc.; Compound Semicond.; Dow Corning Compound Semicond Solut.; LPE.; Norstel AB.; SemiSouth.; SiCED.; SiCrystal.; Surface Technol Syst plc.