Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer

GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AlN/Si(111) substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional (3D) mode to the 2D one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy (TEM) measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.

Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition

Mosaic structure in InN layers grown by metalorganic chemical vapor deposition at various temperatures has been investigated by X-ray diffraction (XRD). With a combination of Williamson-Hall measurement and fitting of twist angles, it was found that variation of growth temperature from 450 to 550 degrees C leads to the variation of the lateral coherence length, vertical coherence length, tilt and twist of mosaic blocks in InN films in a, respectively, monotonic way. In particular, mosaic tilt increases whereas mosaic twist decreases with elevating temperature. Atomic force microscopy shows the morphological difference of the InN nucleation layers grown at 450 and 550 degrees C. Different coalescence thickness and temperature-dependent in-plane rotation of InN nuclei are considered to account for the XRD results. (c) 2006 Elsevier B.V. All rights reserved.

Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD

The morphological evolution of GaN thin films grown on sapphire by metalorganic chemical vapor deposition was demonstrated to depend strongly on the growth pressure of GaN nucleation layer (NL). For the commonly used two-step growth process, a change in deposition pressure of NL greatly influences the growth mode and morphological evolution of the following GaN epitaxy. By means of atomic force microscopy and scanning electron microscope, it is shown that the initial density and the spacing of nucleation sites on the NL and subsequently the growth mode of FIT GaN epilayer may be directly controlled by tailoring the initial low temperature NL growth pressure. A mode is proposed to explain the TD reduction for NL grown at relatively high reactor pressure. (C) 2003 Elsevier B.V. All rights reserved.

Different transfer paths for thermally activated electrons and holes in self-organized Ge/Si(001) islands in a multilayer structure

We investigated the temperature dependence (10-250 K) of the photoluminescence (PL) emission spectrum of self-organized Ge/Si(001) islands in a multilayer structure. With elevated temperature, we find that the thermally activated holes and electrons are gathered by the Ge islands in different ways. The holes drift from the wetting layer into the islands, while the electrons, confined in Si due to type-II band alignment, leak into the Ge islands by the electrostatic interaction with the holes accumulated there. It results in an increase of the integrated intensity of island-related PL at a certain temperature range and a reduction of the phonon energy in the phonon-assisted PL of the islands by involving a type-I transition into a type-II transition. (C) 2001 American Institute of Physics.

X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures

An X-ray diffraction method, estimating the strain relaxation in an ultrathin layer, has been discussed by using kinematic and dynamical X-ray diffraction (XRD) theory. The characteristic parameter Delta Omega, used as the criterion of the strain relaxation in ultrathin layers, is deduced theoretically. It reveals that Delta Omega should be independent of the layer thickness in a coherently strained layer. By this method, we characterized our ultrathin GaNxAs1-x samples with N contents up to 5%. XRD measurements show that our GaNxAs1-x layers are coherently strained on GaAs even for such a large amount of N. Furthermore, a series of GaNxAs1-x samples with same N contents but different layer thicknesses were also characterized. It was found that the critical thickness (L-c) of GaNAs in the GaAs/GaNAs/GaAs structures determined by XRD measurement was 10 times smaller than the theoretical predictions based on the Matthews and Blakeslee model. This result was also confirmed by in situ observation of reflection high-energy electron diffraction (RHEED) and photoluminescence (PL) measurements. RHEED observation showed that the growth mode of GaNAs layer changed from 2D- to 3D-mode as the layer thickness exceeded L-c. PL measurements showed that the optical properties of GaNAs layers deteriorated rapidly as the layer thickness exceeded L-c. (C) 2000 Elsevier Science B.V. All rights reserved.

The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105

Thick GaN films were grown on sapphire in a home-made vertical HVPE reactor. Effect of nucleation treatments on the properties of GaN films was investigated, including the nitridation of sapphire, low temperature GaN buffer and MOCVD-template. Various material characterization techniques, including AFM, SEM, XRD, CL and PL have been used to assess these GaN epitaxial films. It was found that the surface of sapphire after high temperature nitridation was flat and showed high density nucleation centers. In addition, smooth Ga-polarity surface of epitaxial layer can be obtained on the nitridation sapphire placed in air for several days due to polarity inversion. This may be caused by the atoms re-arrangement because of oxidation. The roughness of N-polarity film was caused by the huge inverted taper domains, which can penetrate up to the surface. The low temperature GaN buffer gown at 650 degrees C is favorable for subsequent epitaxial film, which had narrow FWHM of 307 arcsec. The epitaxial growth on MOCVD-template directly came into quasi-2D growth mode due to enough nucleation centers, and high quality GaN films were acquired with the values of the FWHM of 141 arcsec for (002) reflections. After etching in boiled KOH, that the total etch-pit density was only 5 x 106 cm(-2) illustrated high quality of the thick film on template. The photoluminescence spectrum of GaN film on the MOCVD-template showed the narrowest line-width of the band edge emission in comparison with other two growth modes.

Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy

ZnTe thin films have been grown on GaAs(0 0 1) substrates at different temperatures with constant Zn and Te beam equivalent pressures (BEPs) by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) observation indicates that two-dimensional (2D) growth mode can be established after around one-minute three-dimensional (3D) nucleation by increasing the substrate temperature to 340 degrees C. We found that Zn desorption from the ZnTe surface is much greater than that of Te at higher temperatures, and estimated the Zn sticking coefficient by the evolution of growth rate. The Zn sticking coefficient decreases from 0.93 to 0.58 as the temperature is elevated from 320 to 400 degrees C. The ZnTe epilayer grown at 360 degrees C displays the narrowest full-width at half-maximum (FWHM) of 660 arcsec from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) measurements. The surface morphology of ZnTe epilayers is strongly dependent on the substrate temperature, and the root-mean-square (RMS) roughness diminishes drastically with the increase in temperature.

自组装InAs/GaAs量子点材料和量子点激光器

利用分子束外延技术和Stranski-Krastanow生长模式，系统研究In(Ga)As/GaAs,InAlAs/AlGaAs/GaAs,In(Ga)As/InAlAs/InP材料体系应变自组装量子点的形成和演化。通过调节实验条件，可以对量子点的空间排列及有序性进行控制，并实现了InP衬底上量子点向量子线的渡越。研制出激射波长λ=960nm，条宽100μm，腔长800μm的InAs/GaAs量子点激光器，室温连续输出功率大于1W，室温阈值电流密度218A/cm~2,0.53W室温连续工作寿命超过3000h。

Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer

Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si substrate by molecular beam epitaxy. The microstructural and compositional characteristics of the films were studied by analytical transmission electron microscopy (TEM). A SiO2 amorphous layer about 3.5 nm in thickness between the Si/ZnO interface has been identified by means of spatially resolved electron energy loss spectroscopy. Cross-sectional and plan-view TEM investigations reveal (GaN/ZnO/SiO2/Si) layers exhibiting definite a crystallographic relationship: [111](Si)//[111](ZnO)//[0001](GaN) along the epitaxy direction. GaN films are polycrystalline with nanoscale grains (similar to100 nm in size) grown along [0001] direction with about 20degrees between the (1 (1) over bar 00) planes of adjacent grains. A three-dimensional growth mode for the buffer layer and the film is proposed to explain the formation of the as-grown polycrystalline GaN films and the functionality of the buffer layer. (C) 2004 Elsevier Ltd. All rights reserved.

Optical characterization of the Ge/Si (001) islands in multilayer structure

We show that the observed temperature dependence of the photoluminescence (PL) features can be consistently explained in terms of thermally activated carrier transfer processes in a multilayer structure of the self-organized Ge/Si(001) islands. The type II (electron confinement in Si) behavior of the Ge/Si islands is verified. With elevated temperature, the thermally activated electrons and holes enter the Ge islands from the Si and from the wetting layer (WL), respectively. An involvement of the type I (spatially direct) into type II (spatially indirect) recombination transition takes place at a high temperature.

Effect of nucleating agent on the isothermal crystallization kinetics of PHBV

The crystallization behavior of PHBV, poly(beta -hydroxybutyrate-co-beta -hydrxyvalerate), with nucleating agents under isothermal conditions was investigated. A differential scanning calorimeter was used to monitor the crystallization process from the melt. During isothermal crystallization, the dependence of relative degree of crystallinity on time was described by the Avrami equation. It has been shown that the addition of BN and Tale causes a considerable increase in the overall crystallization rate of PHBV but does not influence the Avrami exponent n, mechanism of nucleation and spherulite growth mode of PHBV. A little of nucleating agent will increase the crystallization rate and decrease the fold surface free energy sigma (e), remarkably. The effect of BN is more significant than that of Talc.

内蒙古乌拉特中旗北部宝音图群研究

The Baoyintu Group, lies in Wulate-zhongqi, Inner Mongolia, is a set of medium-grade metamorphic rock series which undergoes complex deformations. It consists of pelite schist, greenschist, plagioclase amphibolite quartzite and marble. The pelite schist is the main rock type and contains the classic medium pressure metamorphic minerals. The author divided Baoyintu group into five assemblages, investigated the rock association and plotted geological section of each assemblage in this area. Based on the systemically study of structural geology, petrology, geochemistry and mineralogy, the author reconstructs the protolith, sedimentary environment and tectonic evolution, discusses the mesoscopic and microscopic structure, metamorphism, geochemistry characters and the correlation between porphyroblast growth and deformation-metamorphism. There are three phase deformations in the research area: the earliest one occurred as the Baoyintu group deformed and metamorphosed and the main structure pattern is tight fold within layers during the Dl, large scale reversed fold and two phase faults (Fl fault and F2 fault) during the D2, and superimposed fold and F3 fault during D3. The F3 trancate the Wenduermian group of Silurian. The second and third phase deformation are relate to the orogenic event of late period of early Paleozoic. According to the rock association ,characteristics of the rocks and research of geochemistry, we get some information of the sedimentary environment and tectonic evolution of Baoyintu group. The source rocks are a set of terrigenous deposits-volcanic formation which reflect the history of the tectonic setting: stable- active-restable. And there are two sedimentary cycle from first assemblage to fifth assemblage: from first assemblage to fourth assemblage is a course of progression and the fifth assemblage is a start of regression. We also get the information of the P-T-t path by studying petrographies and calculating temperature and pressure. The path is not similiat to any classic type. And the interpretation is different from the traditional opinion. The P-T-t path reflects the dynamic course of convergence and uplift, magma underplating, back-arc extension and convergence of continental margin. Applying the theory of deformation partitioning to this area, the author discuss the relationship between deformation and porphyroblast growth, and get the conclusion of the sequence of deformation and metamorphism. At the first time we measure the distribution of chemical composition within the porphyroblast by XRF, confirm the theory of deformation partitioning quantitative and get new understanding about growth phase of porphyroblast and growth mode of porphyroblast: porphyroblast grow in the manner as "rose flower", the growth is controlled by the deformation. The elements distribution in porphyroblast reflects the growth manner and indicate history of metamorphism and deformation. So, we can deduce the metmorphism and deformation from the elements distribution in porphyroblast.

The effect of straining mode on void growth

Large strain finite element method is employed to investigate the effect of straining mode on void growth. Axisymmetric cell model embedded with spherical void is controlled by constant triaxiality: loading,while plane-stress model containing a circular void is loaded by constant ratio of straining. Elastic-plastic material is used for the matrix in both cases. It is concluded that, besides the known effect of triaxiality, the straining mode which intensifies the plastic concentration around the void is also a void growth stimulator. Experimental results are cited to justify the computation results.

Investigation Of Mode Ii Crack Growth Following A Very High Speed Impact

A recoverable plate impact testing technology has been developed for studying fracture mechanisms of mode II crack. With this technology, a single duration stress pulse with submicrosecond duration and high loading rates, up to 10(8) MPam(1/2)s(-1), can be produced. Dynamic failure tests of Hard-C 60# steel were carried out under asymmetrical impacting conditions with short stress-pulse loading. Experimental results show that the nucleation and growth of several microcracks ahead of the crack tip, and the interactions between them, induce unsteady crack growth. Failure mode transitions during crack growth, both from mode I crack to mode II and from brittle to ductile fracture, were observed. Based on experimental observations, a discontinuous crack growth model was established. Analysis of the crack growth mechanisms using our model shows that the shear crack extension is unsteady when the extending speed is between the Rayleigh wave speed c(R) and the shear wave speed c(S). However, when the crack advancing speed is beyond c(S), the crack grows at a steady intersonic speed approaching root 2c(S). It also shows that the transient mechanisms, such as nucleation, growth, interaction and coalescence among microcracks, make the main crack speed jump from subsonic to intersonic and the steady growth of all the subcracks causes the main crack to grow at a stable intersonic speed.

Asymptotic analysis of plane-strain mode I steady-state crack growth in transformation toughening ceramics (II)

Based on a constitutive law which includes the shear components of transformation plasticity, the asymptotic solutions to near-tip fields of plane-strain mode I steadity propagating cracks in transformed ceramics are obtained for the case of linear isotropic hardening. The stress singularity, the distributions of stresses and velocities at the crack tip are determined for various material parameters. The factors influencing the near-tip fields are discussed in detail.