Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer

A Ge layer with a pitting surface can be obtained when the growth temperature is lowered to 290 degrees C. On the low temperature Ge buffer layer with pits, high quality Ge layer was grown at 600 degrees C with a threading dislocation density of similar to 1x10(5)cm(-2). According to channeling and random Rutherford backscattering spectrometry spectra, a chi(min) value of 10% and 3.9% was found, respectively, at the Ge/Si interface and immediately under the surface peak. The root-mean-square surface roughness of Ge film was 0.33nm.

Growth and characterization of semi-insulating GaN films grown by MOCVD

High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arc-min, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 degrees C was measured to be approximate 10(9) and 10(6) Omega(.)cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.

Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy

ZnTe thin films have been grown on GaAs(0 0 1) substrates at different temperatures with constant Zn and Te beam equivalent pressures (BEPs) by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) observation indicates that two-dimensional (2D) growth mode can be established after around one-minute three-dimensional (3D) nucleation by increasing the substrate temperature to 340 degrees C. We found that Zn desorption from the ZnTe surface is much greater than that of Te at higher temperatures, and estimated the Zn sticking coefficient by the evolution of growth rate. The Zn sticking coefficient decreases from 0.93 to 0.58 as the temperature is elevated from 320 to 400 degrees C. The ZnTe epilayer grown at 360 degrees C displays the narrowest full-width at half-maximum (FWHM) of 660 arcsec from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) measurements. The surface morphology of ZnTe epilayers is strongly dependent on the substrate temperature, and the root-mean-square (RMS) roughness diminishes drastically with the increase in temperature.

Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy

ZnTe epilayers were grown on GaAs(0 0 1) substrates by molecular beam epitaxy (MBE) at different VI/II beam equivalent pressure (BEP) ratios (R-VI/II) in a wide range of 0.96-11 with constant Zn flux. Based on in situ reflection high-energy electron diffraction (RHEED) observation, two-dimensional (2D) growth mode can be formed by increasing the R-VI/II to 2.8. The Te/Zn pressure ratios lower than 4.0 correspond to Zn-rich growth state, while the ratios over 6.4 correspond to Te-rich one. The Zn sticking coefficient at various VI/II ratios are derived by the growth rate measurement. The ZnTe epilayer grown at a R-VI/II of 6.4 displays the narrowest full-width at half-maximum (FWHM) of double-crystal X-ray rocking curve (DCXRC) for (0 0 4) reflection. Atomic force microscopy (AFM) characterization shows that the grain size enlarges drastically with the R-VI/II. The surface root-mean-square (RMS) roughness decreases firstly, attains a minimum of 1.14 nm at a R-VI/II of 4.0 and then increases at higher ratios. It is suggested that the most suitable R-VI/II be controlled between 4.0 and 6.4 in order to grow high-quality ZnTe epitaxial thin films.

DETERMINATION OF SURFACE-ROUGHNESS OF INP (001) WAFERS BY X-RAY-SCATTERING

The surface roughness of polished InP (001) wafers were examined by x-ray reflectivity and crystal truncation rod (CTR) measurements. The root-mean-square roughness and the lateral correlation scale were obtained by both methods. The scattering intensities in the scans transverse to the specular reflection rod were found to contain two components. A simple surface model of surface faceting is proposed to explain the experimental data. The sensitivities of the two methods to the surface structure and the role of the resolution functions in the CTR measurements are discussed.

X-RAY-SCATTERING FROM A ROUGH-SURFACE AND DAMAGED LAYER OF POLISHED WAFERS

Theoretical and experimental investigations were performed to show the application of x-ray crystal truncation rod scattering combined with x-ray reflectivity in the measurements of surface roughness and near-surface damage of mechanochemically polished wafers. By fitting the measured crystal truncation rod curves it has been shown that polished wafers are divided into three parts -irregular steps on the surface, a damaged thin layer beneath the surface and a perfect bulk. The results show that the root mean square of the surface roughness of mechanochemically polished Fe-doped and/or S-doped InP wafers is one to two atom layers, and that the lateral correlation length of the surface roughness is about 3000-7500 Angstrom. The thickness of the damaged region is found to be about 1000 atom layers.

MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC

AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with a high-mobility GaN thin layer as a channel are grown on high resistive 6H-SiC substrates by metalorganic chemical vapor deposition. The HEMT structure exhibits a typical two-dimensional electron gas (2DEG) mobility of 1944cm2/(V · s) at room temperature and 11588cm2/(V· s) at 80K with almost equal 2DEG concentrations of about 1.03 × 1013 cm-2 High crystal quality of the HEMT structures is confirmed by triple-crystal X-ray diffraction analysis. Atomic force microscopy measurements reveal a smooth AlGaN surface with a root-mean-square roughness of 0. 27nm for a scan area of 10μm × 10μm. HEMT devices with 0.8μm gate length and 1.2mm gate width are fabricated using the structures. A maximum drain current density of 957mA/mm and an extrinsic transconductance of 267mS/mm are obtained.

40 Gbits/s all-optical clock recovery for degraded signals using an amplified feedback laser

All-optical clock recovery for the return-to-zero modulation format is demonstrated experimentally at 40 Gbits/s by using an amplified feedback laser. A 40 GHz optical clock with a root-mean-square (rms) timing jitter of 130 fs and a carrier-to-noise ratio of 42 dB is obtained. Also, a 40 GHz optical clock with timing jitter of 137 fs is directly recovered from pseudo-non-return-to-zero signals degraded by polarization-mode dispersion (PMD). No preprocessing stage to enhance the clock tone is used. The rms timing jitter of the recovered clock is investigated for different values of input power and for varying amounts of waveform distortion due to PMD.

Gound State Properties of Nuclei in (295)118 alpha-Decay Chain

The properties of nuclei belonging to the alpha-decay chain of superheavy element (295)118 have been studied in the framework of axially deformed relativistic mean field (RMF) theory with the parameter set of NL-Z2 in the blocked BCS approximation. Some ground state properties such as binding energies, deformations, and alpha-decay energies Q(alpha) have been obtained and agree well with those from finite-range droplet model (FRDM). The single-particle spectra of nuclei in (295)118 alpha-decay chain show that the shell gaps present obviously nucleon number dependence. The root-mean-square (rms) radii of proton, neutron and matter distributions change slowly from (283)112 to (295)118 but dramatically from (279)110 to (283)112, which may be due to the subshell closure at Z = 110 in (279)110. The alpha-decay half-lives in (295)118 decay chain are evaluated by employing the cluster model and the generalized liquid drop model (GLDM), and the overall agreement is found when they are compared with the known experimental data. The alpha-decay lifetimes obtained from the cluster model are slightly larger than those of GLDM ones. Finally, we predict the alpha-decay half-lives of Z = 118, 116, 114, 112 isotopes using the cluster model and GLDM, which also indicate these two models can corroborate each other in studies on superheavy nuclei. The results from GLDM are always lower than those obtained from the cluster model.

Annealing effects in silicon implanted with helium

Silicon samples were implanted with helium and analyzed by atomic force microscopy (AFM) and Raman spectroscopy before and after annealing in the range of 523-1273 K. After annealing at 523 K, the amorphous area induced by He-ion implantation at room temperature was partially recovered and grain sizes became larger. The surface morphology was analyzed through AFM measurements and it was observed that root mean square of the surface roughness alters upwards and then downwards with annealing temperature. (C) 2008 Elsevier B.V. All rights reserved.

Configuration of the valence neutrons of B-17

The reaction cross section of B-17 on C-12 target at (43.7 +/- 2.4) MeV/u has been measured at the Radioactive Ion Beam Line in Lanzhou (RIBLL). The root-mean-square matter radius (R-rms) was deduced to be (2.92 +/- 0.10) fm, while the R-rms of the core and the valence neutron distribution are 2.28 fm and 5.98 fm respectively. Assuming a "core plus 2n" structure in B-17, the mixed configuration of (2s(1/2)) and (1d(5/2)) of the valence neutrons is studied and the s-wave spectroscopic factor is found to be (80 +/- 21)%.

基于SHAW模型的黄土高原半干旱区农田土壤水分动态模拟

黄土高原半干旱区土壤蒸发强烈,准确地掌握土壤水分动态对于旱地农业水分管理至关重要。应用基于物理基础的一维水热耦合SHAW(The Simultaneous Heat and Water)模型,模拟了陕西子洲岔巴沟流域1964~1967年土壤水分和土壤蒸发的动态特征,以及神木六道沟流域2006年坡地和梯田土壤水分变化。结果表明,除表层土壤水分模拟结果偏差较大,其他土层模拟值与实测值基本吻合,模拟期土壤水分模拟的相对平均绝对误差(Relatively Mean Absolutely Error,RMAE)为5.2%~11.4%。1964~1967年土壤累积蒸发量模拟值与实测值平均相对偏差为0.8%~6.1%,土壤蒸发的模拟值与实测值较为一致。因此,SHAW模型可以用于黄土高原半干旱区农田土壤水分动态规律研究。

Validating MODIS-derived land surface evapotranspiration with in situ measurements at two AmeriFlux sites in a semiarid region

Reducing uncertainties in the estimation of land surface evapotranspiration (ET) from remote-sensing data is essential to better understand earth-atmosphere interactions. This paper demonstrates the applicability of temperature-vegetation index triangle (T-s-VI) method in estimating regional ET and evaporative fraction (EF, defined as the ratio of latent heat flux to surface available energy) from MODIS/Terra and MODIS/Aqua products in a semiarid region. We have compared the satellite-based estimates of ET and EF with eddy covariance measurements made over 4 years at two semiarid grassland sites: Audubon Ranch (AR) and Kendall Grassland (KG). The lack of closure in the eddy covariance measured surface energy components is shown to be more serious at MODIS/Aqua overpass time than that at MODIS/Terra overpass time for both AR and KG sites. The T-s-VI-derived EF could reproduce in situ EF reasonably well with BIAS and root-mean-square difference (RMSD) of less than 0.07 and 0.13, respectively. Surface net radiation has been shown to be systematically overestimated by as large as about 60 W/m(2). Satisfactory validation results of the T-s-VI-derived sensible and latent heat fluxes have been obtained with RMSD within 54 W/m(2). The simplicity and yet easy use of the T-s-VI triangle method show a great potential in estimating regional ET with highly acceptable accuracy that is of critical significance in better understanding water and energy budgets on the Earth. Nevertheless, more validation work should be carried out over various climatic regions and under other different land use/land cover conditions in the future.

Sol-gel deposition and luminescence properties of LiYF4 : Tb3+ thin films

Tb3+-doped LiYF4 films were deposited on quartz glass by a simple sol-gel method. X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), photoluminescence spectra, and lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 300 degrees C and fully crystallized at 400 degrees C. AFM and FESEM images of singly coated LiY0.95Tb0.05F4 annealed at 400 degrees C indicated that the film is uniform and crack-free films with average grain size of 90 nm, root mean square roughness of 11 nm and thickness of 120 nm. The doped Tb3+ ions showed its characteristic emission in crystalline LiYF4 films, i.e., D-5(3), F--7(4)J (J = 6, 5, 4, 3) emissions. The optimum doping concentration of the Tb3+ was determined to be 5.0 mol% of Y3+ in LiYF4 films.

Pechini sol-gel deposition and luminescent properties of SrLa1-xRExGa3O7 (RE = Eu, Tb) phosphor films

SrLa1-xRExGa3O7 (RE = EU3+, Tb3+) phosphor films were deposited on quartz glass substrates by a simple Pechim sol-gel method. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), atomic force microscopy, field-emission scanning electron microscopy, photoluminescence spectra, and lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 700 degrees C and crystallized fully at 900 degrees C. The results of FNR spectra were in agreement with those of XRD. Uniform and crack-free films annealed at 900 degrees C were obtained with average grain size of 80 nm, root mean square roughness of 46 nm and thickness of 130 nm The RE ions showed their characteristic emission in crystalline SrLa1-xRExGa3O7 films, i.e., Eu3+ D-0-F-7(J) (J = 0, 1, 2, 3, 4), Tb3+5D4 -(7) F-J (J = 6, 5, 4, 3) emissions, respectively. The optimum concentrations (x) of Eu3+ and Tb3+ were determined to be 50, and 80 mol% in SrLa(1-x)RE(x)GGa(3)O(7) films, respectively.