Design of NRAs having higher aperture opening ratio and autocorrelation compression ratio by means of a global optimization method

When noises considerations are made, nonredundant arrays (NRAs) are endowed with many advantages which other arrays e.g., uniformly redundant arrays (URAs) do not possess in applications of coded aperture imaging. However, lower aperture opening ratio limits the applications of NRA in practice. In this paper, we present a computer searching method based on a global optimization algorithm named DIRECT to design NRAs. Compared with the existing NRAs e.g., Golay's NRAs, which are well known and widely used in various applications, NRAs found by our method have higher aperture opening ratio and auto correlation compression ratio. These advantages make our aperture arrays be very useful for practical applications especially for which of aperture size are limited. Here, we also present some aperture arrays we found. These aperture arrays have an interesting property that they belong to both NRA and URA. (C) 2006 Elsevier GmbH. All rights reserved.

Structure and residual stress in gamma-LiAlO2, layer fabricated by vapor transport equilibration on (0001)sapphire

gamma-LiAlO2 layers with a highly preferred (1 0 0) orientation were prepared by vapor transport equilibration (VTE) technique on (0 0 0 1) sapphire substrate. Microststructure of the gamma-LiAlO2 layers was studied by XRD and SEM. In the temperature range from 750 to 1100 degrees C, the residual stress in the gamma-LiAlO2 layers varied from tensile to compressive with the increase of VTE temperature, and the critical point of the change between tensile and compressive stress is around 975 degrees C. (c) 2005 Elsevier B.V. All rights reserved.

Y2O3 stabilized ZrO2 thin films deposited by electron-beam evaporation: Optical properties, structure and residual stresses

This paper describes the preparation and the characterization Of Y2O3 stabilized ZrO2 thin films produced by electric-beam evaporation method. The optical properties, microstructure, surface morphology and the residual stress of the deposited films were investigated by optical spectroscopy, X-ray diffraction (XRD), scanning probe microscope and optical interferometer. It is shown that the optical transmission spectra of all the YSZ thin films are similar with those of ZrO2 thin film, possessing high transparency in the visible and near-infrared regions. The refractive index of the samples decreases with increasing of Y2O3 content. The crystalline structure of pure ZrO2 films is a mixture of tetragonal phase and monoclinic phase, however, Y2O3 stabilized ZrO2 thin films only exhibit the cubic phase independently of how much the added Y2O3 content is. The surface morphology spectrum indicates that all thin films present a crystalline columnar texture with columnar grains perpendicular to the substrate and with a predominantly open microporosity. The residual stress of films transforms tensile from compressive with the increasing Of Y2O3 molar content, which corresponds to the evolutions of the structure and packing densities. (C) 2008 Elsevier Ltd. All rights reserved.

Some new bounds on eigenvalues of the Hadamard product and the Fan product of matrices

Let A and B be nonsingular M-matrices. A lower bound on the minimum eigenvalue q(B circle A(-1)) for the Hadamard product of A(-1) and B, and a lower bound on the minimum eigenvalue q(A star B) for the Fan product of A and B are given. In addition, an upper bound on the spectral radius rho(A circle B) of nonnegative matrices A and B is also obtained. These bounds improve several existing results in some cases and the estimating formulas are easier to calculate for they are only depending on the entries of matrices A and B. (C) 2009 Elsevier Inc. All rights reserved.

Residual plastids of bleached mutants of Euglena gracilis and their effects on the expression of nucleus-encoded genes

Bleached mutants of Euglena gracilis were obtained by treatment with ofloxacin (Ofl) and streptomycin (Sm) respectively. As shown by electron microscopy, the residual plastids contain prothylakoids in an Ofl mutant, and the highly developed and tightly stacked membranous structure found in cells of two Sm, mutants. Nine genes of the plastid genome were examined with PCR, showing that ribosomal protein genes and most other plastid genes were lost in all but one Sm mutant. Using differential display and RT-PCR, it was shown that chloroplast degeneration could cause changes in transcription of certain nucleus-encoded genes during heterotrophic growth in darkness.

MOBILITY AND TRANSFER OF RESIDUAL HEXACHLOROCYCLOHEXANE (HCH) IN AQUATIC ENVIRONMENT

An investigation was carried out to study the mobility and transfer of HCH-residues in Yanjia lake, Hubei, China, from 1990-1993. By sampling at different locations, the horizontal distribution of HCH-residues was determined; by sampling at different depths in the same location, the vertical mobility of HCH-residues and its penetration were measured. The vertical profiles of HCH-residues in sediment showed a gradient distribution, which was reduced with the increase in depth. This was very similar in shape to the organic carbon and nitrogen content profiles. The penetration of HCH-residues was measured as 60cm approximately. Meanwhile, water, sediment (0-12cm), benthos and benthic fish collected from the lake were analyzed to determine the transfer of HCH-residues along aquatic food chain. The BCF values of HCH-residues indicated that the bioaccumulation of HCH-residues in freshwater food chain still exsisted in spite of the banning of HCH since 1983. The maxium BCF value of HCH-residues in the liver samples of 5-year-old common carp was up to 61966 (calculated by beta-HCH).

A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er3+ ions

This paper compares the properties of silicon oxide and nitride as host matrices for Er ions. Erbium-doped silicon nitride films were deposited by a plasma-enhanced chemical-vapour deposition system. After deposition, the films were implanted with Er3+ at different doses. Er-doped thermal grown silicon oxide films were prepared at the same time as references. Photoluminescence features of Er3+ were inspected systematically. It is found that silicon nitride films are suitable for high concentration doping and the thermal quenching effect is not severe. However, a very high annealing temperature up to 1200 degrees C is needed to optically activate Er3+ which may be the main obstacle to impede the application of Er-doped silicon nitride.

Gallium antisite defect and residual acceptors in undoped GaSb

Undoped Ga-Sb samples were investigated by positron lifetime spectroscopy (PAS) and the coincident Doppler broadening (CDB) technique. PAS measurement indicated that there were monovacancy-type defects in undoped Ga-Sb samples, which were identified to be predominantly Ca vacancy (V-Ga) related defects by combining the CDB measurements. After annealing of these samples at 520 C, positron shallow trapping have been observed and should be due to Ga-Sb defects. Undoped Ga-Sb is intrinsically p-type having a residual carrier density of 10(16)-10(17) cm(-3). And the Ga-Sb antisite defects are stable in the (0), (1-) and (2-) charge states and act as a double acceptor. Thus, we infer that Ga-Sb antisite defects are the acceptor contributing to the p-type conduction for undoped samples. (C) 2004 Elsevier B.V All rights reserved.

Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence

Positron lifetime, photoluminescence (PL), and Hall measurements were performed to study undoped p-type gallium antimonide materials. A 314 ps positron lifetime component was attributed to Ga vacancy (V-Ga) related defect. Isochronal annealing studies showed at 300 degreesC annealing, the 314 ps positron lifetime component and the two observed PL signals (777 and 797 meV) disappeared, which gave clear and strong evidence for their correlation. However, the hole concentration (similar to2x10(17) cm(-3)) was observed to be independent of the annealing temperature. Although the residual acceptor is generally related to the V-Ga defect, at least for cases with annealing temperatures above 300 degreesC, V-Ga is not the acceptor responsible for the p-type conduction. (C) 2002 American Institute of Physics.

Investigation of Residual Donor Defects in Undoped and Fe-Doped LEC InP

The free electron concentration of as-grown liquid encapsulated Czochralski (LEC) InP measured by Hall effect is much higher than the concentration of net donor impurity determined by glow discharge mass spectroscopy. Evidence of the existence of a native donor hydrogen-indium vacancy complex in LEC undoped and Fe-doped InP materials can be observed with infrared absorption spectra. The concentration increase of the donor complex correlates with the increase of ionized deep acceptor iron impurity Fe~(2+) concentration in Fe-doped semi-insulating (SI) InP. These results indicate that the hydrogen-indium vacancy complex is an important donor defect in as-grown LEC InP, and that it has significant influence on the compensation in Fe-doped SI InP.