InAs quantum dots in InAlAs matrix on (001)InP substrates grown by molecular beam epitaxy

InAs quantum dots grown on InAlAs lattice-matched to (0 0 1) InP substrates by molecular beam epitaxy are investigated by double-crystal X-ray diffraction, photoluminescence and transmission electron microscopy. The growth process is found to follow the Stranski-Krastanow growth mode. The islands formation is confirmed by the TEM measurements. Strong radiative recombination from the quantum dots and the wetting layer is observed, with room temperature PL emission in the 1.2-1.7 mu m region, demonstrating the potential of the InAs/InAlAs QDs for optoelectronic device applications. (C) 1998 Elsevier Science B.V. All rights reserved.

Ordered InAs quantum dots in InAlAs matrix on (001) InP substrates grown by molecular beam epitaxy

InAs self-organized quantum dots in InAlAs matrix lattice-matched to exactly oriented (001) InP substrates were grown by solid source molecular beam epitaxy (MBE) using the Stranski-Krastanow mode. Preliminary characterizations have been performed using photoluminescence and transmission electron microscopy. The geometrical arrangement of the quantum dots is found to be strongly dependent on the amount of coverage. At low deposition thickness. InAs QDs are arranged in chains along [1(1) over bar0$] directions. Luminescence from the quantum dots and the wetting layer consisting of quantum wells with well widths of 1, 2, and 3 monolayers is observed. (C) 1998 American Institute of Physics.

An Improved Selective Area Growth Method in Fabrication of Electroabsorption Modulated Laser

An improved selective area growth (SAG) method is proposed to better the fabrication and performance of the Electroabsorption modulated laser The typical threshold current of the EML is 18mA, and the output power is 5.6mW at EAM facet.

Photoluminescence mechanism of Si nanocrystals embedded in SiO2 matrix

The interface state recombination effect from the quantum confinement effect in PL signals from the SRO material system was studied. The results show that the larger the size of Si NCs, the more beneficial for the interface state recombination process to surpass the quantum confinement process, in support of Qin's model.

Strong red light emission from silicon nanocrystals embedded in SIO2 matrix

In this study, silicon nanocrystals embedded in SiO2 matrix were formed by conventional plasma enhanced chemical vapor deposition (PECVD) followed by high temperature annealing. The formation of silicon nanocrystals (nc-Si), their optical and micro-structural properties were studied using various experimental techniques, including Fourier transform infrared spectroscopy, micro-Raman spectra, high resolution transmission electron microscopy and x-ray photoelectron spectroscopy. Very strong red light emission from silicon nanocrystals at room temperature (RT) was observed. It was found that there is a strong correlation between the PL intensity and the substrate temperature, the oxygen content and the annealing temperature. When the substrate temperature decreases from 250degreesC to RT, the PL intensity increases by two orders of magnitude.

Behavior of Pentacene Initial Nucleation on Various Dielectrics and Its Effect on Carrier Transport in Organic Field-Effect Transistor

The influence of dielectric surface energy on the initial nucleation and the growth of pentacene films as well as the electrical properties of the pentacene-based field-effect transistors are investigated. We have examined a range of organic and inorganic dielectrics with different surface energies, such as polycarbonate/SiO2, polystyrene/SiO2, and PMMA/SiO2 bi-layered dielectrics and also the bare SiO2 dielectric. Atomic force microscopy measurements of sub-monolayer and thick pentacene films indicated that the growth of pentacene film was in Stranski-Kranstanow growth mode on all the dielectrics. However, the initial nucleation density and the size of the first-layered pentacene islands deposited on different dielectrics are drastically influenced by the dielectric surface energy. With the increasing of the surface energy, the nucleation density increased and thus the average size of pentacene islands for the first mono-layer deposition decreased. The performance of fabricated pentacene-based thin film transistors was found to be highly related to nucleation density and the island size of deposited Pentacene film, and it had no relationship to the final particle size of the thick pentacene film. The field effect mobility of the thin film transistor could be achieved as high as 1.38 cm(2)/Vs with on/off ratio over 3 x 10(7) on the PS/SiO2 where the lowest surface energy existed among all the dielectrics. For comparison, the values of mobility and on/off ratio were 0.42 cm(2)/Vs and 1 x 10(6) for thin film transistor deposited directly on bare SiO2 having the highest surface energy.

Broadband short-range surface plasmon structures for absorption enhancement in organic photovoltaics

We theoretically demonstrate a polarization-independent nanopatterned ultra-thin metallic structure supporting short-range surface plasmon polariton (SRSPP) modes to improve the performance of organic solar cells. The physical mechanism and the mode distribution of the SRSPP excited in the cell device were analyzed, and reveal that the SRSPP-assisted broadband absorption enhancement peak could be tuned by tailoring the parameters of the nanopatterned metallic structure. Three-dimensional finite-difference time domain calculations show that this plasmonic structure can enhance the optical absorption of polymer-based photovoltaics by 39% to 112%, depending on the nature of the active layer (corresponding to an enhancement in short-circuit current density by 47% to 130%). These results are promising for the design of organic photovoltaics with enhanced performance.

The role of molybdenum oxide as anode interfacial modification in the improvement of efficiency and stability in organic light-emitting diodes

It has been experimentally found that molybdenum oxide (MoO3) as the interfacial modification layer on indium-tin-oxide (ITO) in organic light-emitting diodes (OLEDs) significantly improves the efficiency and lifetime. In this paper, the role of MoO3 and MoO3 doped N,N '-di(naphthalene-1-yl)-N,N '-diphenyl-benzidine (NPB) as the interface modification layer on ITO in improvement of the efficiency and stability of OLEDs is investigated in detail by atomic force microscopy (AFM), polarized optical microscopy, transmission spectra, ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS).

Origin of negative differential resistance and memory characteristics in organic devices based on tris(8-hydroxyquinoline) aluminum

Negative differential resistance (NDR) and memory phenomenon have been realized in current-voltage (I-V) characteristics of indium tin oxide/tris(8-hydroxyquinoline) aluminum/aluminum devices. The I-V curves have been divided into three operational regions that are associated with different working regimes of the devices: (i) bistable region, (ii) NDR region, and (iii) monotonic region. The bistable region disappeared after a couple of voltage sweeps from zero to a positive voltage. The bistable nature can be reinstated by applying a suitable negative voltage.

Improved electron injection in organic light-emitting devices with a lithium acetylacetonate [Li(acac)]/aluminium bilayer cathode

Lithium acetylacetonate [Li(acac)] covered with aluminium was used as an efficient electron injection layer in organic light-emitting devices (OLEDs) consisting of NPB as the hole transport layer and Alq(3) as the electron transport and light emitting layer, resulting in lower turn- on voltage and increased current efficiency. The turn- on voltage (the voltage at a luminance of 1 cd m(-2)) was decreased from 5.5 V for the LiF/Al and 4.4 V for Ca/Al to 4.0 V for Li(acac)/Al, and the device current efficiency was enhanced from 4.71 and 5.2 to 7.0 cd A(-1). The performance tolerance to the layer thickness of Li(acac) is also better than that of the device with LiF. LiF can only be used when deposited as an ultra- thin layer because of its highly insulating nature, while the Li(acac) can be as thick as 5 nm without significantly affecting the EL performance. We suppose that the free lithium released from Li(acac) improves the electron injection when Li(acac) is covered with an Al cathode.

Online study of the formation of PA6 droplets in PP matrix under shear flow

Breakup process of polyamide 6 (PA6) in polypropylene (PP) matrix under shear flow was online studied by using a Linkam CSS 450 stage equipped with optical microscopy. Both tip streaming and fracture breakup modes of PA6 droplets were observed in this study. It was reported that the droplet would break up by tip streaming model when the radio of the droplet phase viscosity to the matrix phase viscosity (n(r) = n(d)/n(m)) is smaller than 0.1 (Taylor, Proc R Soc London A 1934, 146, 501; Grace, Chem Eng Commun 1982, 14, 225; Bartok and Mason, J Colloid Sci 1959, 14, 13; Rumscheidt and Mason, J Colloid Sci 1961, 16, 238; de Bruijn, Chem Eng Sci 1993, 48, 277). However, the tip streaming model was observed even when the viscosity ratio was much greater than 0.1 (n(r) = 1.9). In this study for the tip streaming mode, small droplets were ruptured from the tip of the mother droplet. On the other hand, the mother droplet was broken into two or more daughter droplets with one or several satellite droplets between them for the fracture mode. It was found that PA6 droplet was much elongated at first, and then broke up via tip streaming or fracture to form daughter droplets or small satellite droplets with the shape of fiber or ellipse.

Polyaniline-coated carbon particles and their electrode behavior in organic carbonate electrolyte

In an attempt to increase the interface stability of carbon used in Li-ion batteries, a thin conducting polyaniline (PANI) film was fabricated on the surface of carbon by in situ chemical polymerization. The chemical and electrochemical properties of the composite material were characterized using X-ray diffraction, Raman spectroscopy, scanning electron microscope, cyclic voltammetry, and electrochemical impedance spectroscopy. It was confirmed that the PANI film has an obvious effect on the morphology and the electrochemical performance of carbon. The results could be attributed to the electronic and electrochemical activity of the conducting PANI films.

Negative differential resistance effect in organic devices based on an anthracene derivative

The authors observed a negative differential resistance (NDR) in organic devices consisting of 9,10-bis-(9,9-diphenyl-9H-fluoren-2-yl)-anthracene (DPFA) sandwiched between Ag and indium tin oxide electrodes. The large NDR shown in current-voltage characteristics is reproducible, resulting in that the organic devices can be electrically switched between a high conductance state (on state) and a low conductance state (off state). It can be found that the currents at both on to off states are space-charge limited and attributed to the electron traps at the Ag/DPFA interface. The large and reproducible NDR makes the devices of tremendous potential in low power memory and logic circuits.