Experimental study on tunable external cavity photodetectors

In this paper, an experiment on tunable resonant cavity enhanced (RCE) photodetector with external cavity is reported. It is the first time to realize a tunable RCE photodetector in China. A tuning range about 10 nm has been obtained and further extension is expected. Corresponding theoretical analysis and discussions are presented. (C) 2000 Elsevier Science B.V. All rights reserved.

Cavity-enhanced photoluminescence of SiGe/Si multiquantum wells grown on silicon-on-insulator substrate

Sharp and strong room-temperature photoluminescence (PL) of the Si0.59Ge0.41/Si multiquantum wells grown on the silicon-on-insulator substrate is investigated. The cavity formed by the mirrors at the surface and the buried SiO2 interface enhances the PL emission and has a wavelength-selective effect on the luminescence. The peak position is consistent with the simulation result and independent of the exciting power, which indicates a strong cavity effect on the room-temperature PL. (C) 2004 American Institute of Physics.

Resonant cavity based compact efficient antireflection structures for photonic crystals

We propose an effective admittance ( EA) method to design antireflection structures for two-dimensional photonic crystals (PCs). We demonstrate that a compact and efficient antireflection structure, which is difficult to obtain by the conventional admittance matching method, can be readily designed by the EA method. The antireflection structure consists of an air slot resonant cavity that is constructed only with the materials that constitute the PC. Compared with a bare PC, the reflection from a PC with an antireflection structure is reduced by two orders of magnitude over a wide bandwidth. To confirm the presented EA method, finite-difference time-domain (FDTD) simulations are performed, and the results from the FDTD and the EA method are in good agreement.

1.55-μm Si-based MOEMS optical tunable filter

A prototype 1.55-μm Si-based micro-opto-electro-mechanical-systems (MOEMS) tunable filter is fabricated, employing surface micromachining technology. Full-width-at-half-maximum (FWHM) of the transmission spectrum is 23 nm. The tuning range is 30 nm under 50-V applied voltage. The device can be readily integrated with resonant cavity enhanced (RCE) detector and vertical cavity surface emitting laser (VCSEL) to fabricate tunable active devices.

Si-based optoelectronic devices and their attractive applications

The semiconductor photonics and optoelectronics which have a great significance in the development of advanced high technology of information systems will be discussed in this paper. The emphasis will be put on the recent research carried out in our laboratory in enhanced luminescence from low dimensional materials such as SiGe/Si and Er-doped Si-rich SiO2/Si and Er-doped SixNy/Si. A ring shape waveguide structure, used to promote the effective absorption coefficient in PIN photodetector for 1.3 mu m wavelength and a resonant cavity enhanced structure, used to improve the quantum efficiency and response in heterostructure photo-transistor (HPT), are also proposed in this paper.

1.3 mu m GaInNAs/GaAs quantum well lasers and photodetectors

The growth of GalnNAs/GaAs quantum well (QW) has been investigated by solid-source molecular beam epitaxy (MBE). N was introduced by a dc-active plasma source. Highest N concentration of 2.6% in GaInNAs/GaAs QW was obtained, corresponding to the photoluminescence peak wavelength of 1.57 mum at 10K. The nitrogen incorporation behavior in MBE growth and the quality improvement of the QW have been studied in detail. 1.3 mum GaInNAs/GaAs SQW laser and MQW resonant-cavity enhanced photodetector have been achieved.

Si-based optoelectronic devices and their attractive applications

The semiconductor photonics and optoelectronics which have a great significance in the development of advanced high technology of information systems will be discussed in this paper. The emphasis will be put on the recent research carried out in our laboratory in enhanced luminescence from low dimensional materials such as SiGe/Si and Er-doped Si-rich SiO2/Si and Er-doped SixNy/Si. A ring shape waveguide structure, used to promote the effective absorption coefficient in PIN photodetector for 1.3 mu m wavelength and a resonant cavity enhanced structure, used to improve the quantum efficiency and response in heterostructure photo-transistor (HPT), are also proposed in this paper.

RCE photodiodes at wavelength band of 1.06 μm

Resonant cavity enhancement (RCE) typed optical detector and modulator which operating at wavelength band of 1.06 μm is reported. The peak quantum efficiency of detector is reasonably high as 50% without bias, and the photocurrent contrast ratio of modulator is 3.6 times at -3.5 V as compared to 0 V. The incident angle dependence of RCE device's photoelectric response is investigated carefully.

Resonant mode analysis in toroidal cavities with elliptic cross-sections

Resonant cavity modes in a torus with elliptical cross section are studied by means of a direct variational method. The nonlinear effects of toroidicity and ellipticity on the frequency of the basic mode are analyzed simply and systematically without the restriction of linear theory. It is shown that the toroidicity effect on the m = 0 transverse magnetic mode is less-than-or-equal-to 11%. The frequency of the mode shifts approximately 11-29% when the elongation of the cross section changes from 1 to 2. The effects of toroidicity and ellipticity differ for each resonant mode.

1064nm RCE探测器光电响应特性分析

对1064nm谐振腔增强型（RCE）光电探测器（PD）的光电响应特性进行了分析研究．利用MBE生长技术得到有源区分别为量子阱和量子点的1064nm RCE探测器的外延片，并对制作的探测器进行了各种光电特性测试．结果表明量子阱结构的RCE探测器量子效率峰值达到57％，谱线半宽6～7nm，峰值波长1059nm；而量子点结构的RCE探测器量子效率峰值达到30％，谱线半宽5nm，峰值波长1056nm．通过分析量子效率和吸收系数之间的关系，对两种结构器件的吸收进行了比较，发现虽然量子点探测器的吸收小，但通过合理设计共振腔等方法也可以达到较高的量子效率．两种结构的器件都有很好的I-V特性．

Array for 980nm Vertical Cavity Surface Emitting Diodes and Detectors

Both the vertical cavity surface emitting diodes and detectors are fabricated by using the epitaxial wafer with resonant cavity structure. Their characteristics are analyzed. The light emitters have high spectral purity of 4.8nm and high electroluminescence intensity of 0.7mW while injection current is 50mA. A 1*16 array of surface emitting light device is tested on line by probes and then used for module. The light detectors have wavelength selectivity and space selectivity. The required difference in input mirror reflectivity between emitters and detectors can easily be achieved though varying the numbers of top DBR period by etching.

Tunability of resonant wavelength by Fabry-Perot microcavity in organic light-emitting diodes

Distributed Bragg reflectors (DBR) with different reflection wavelengths were designed, and were used to fabricate microcavity organic light-emitting diodes (OLEDs) based on tris(8-hydroxyquinoline)-aluminum (Alq(3)) as the emitter and N, N'-di(naphthalene-1-yl)-N, N'-diphenyl-benzidine (NPB) as the hole-transporting layer. The microcavity was composed of DBR dielectric mirror and metal electrode aluminum (Al) mirror. Some effects of vertical optical Fabry-Perot microcavity on spontaneous emission in OLEDs were investigated. Spectral narrowing, enhancement of emitting intensity and anglular dependence of emission were observed due to the microcavity effect. It was found experimentally that the utilization of DBR is a better method to adjust the emissive mode in the resonant cavity in OLEDs well. Thus the realization of different color light emission becomes possible by the combination of carefully designed microcavity and electroluminescent organic semiconductors in a single LED.

The effect of chromium on sulfur resistance of Pd/HY-Al2O3 catalysts for aromatic hydrogenation

Sulfur is a major poison to noble metal catalysts for deep aromatic hydrogenation in the petroleum refining industry. In order to study the sulfur resistance of Pd-based catalysts, a series of Pd, Cr, and PdCr catalysts supported on HY-Al2O3 were studied by NH3-TPD, pyridine-adsorption IR, TPR, IR spectra of adsorbed CO, and toluene hydrogenation in the presence of 3000 ppm sulfur as thiophene under the following conditions: 533-573 K, 4.2 MPa, and WHSV 4.0 h(-1). Cr has no influence on the acidity of the catalysts. TPR patterns and in situ IR spectra of adsorbed CO revealed a strong interaction between Cr and Pd, and the frequency shift of linear bonded CO on Pd indicates that the electron density of Pd decreases with the increase of the Cr/Pd atomic ratio. The catalytic performance of Pd, Cr, and PdCr catalysts shows that the sulfur resistance of Pd is strongly enhanced by Cr, and the activity reaches its maximum when the Cr/Pd atomic ratio equals 8. The active phase model "Pd particles decorated by Cr2O3" is postulated to explain the behavior of PdCr catalysts. (C) 2001 Academic Press.

基于偏振度检测的光纤电流传感方案

本文提出了一种将光学谐振腔中多次来回反射所产生的法拉第旋转积累效应转化为光学信号偏振度变化的光纤电流传感方案。这种方案的主要优点是可以克服环境等因素的扰动带来偏振态变化所产生的影响。文中对所提出方案的特性进行了简单的理论分析和模拟计算，并给出了相应的实验结果验证。

室温下稳定的多波长掺铒光纤激光器的研究

通过在线形谐振腔中引入一段缠绕在压电陶瓷上的单模光纤作为正弦相位调制器，使得激射波长的损耗不固定，抑制由于掺铒光纤的均匀展宽效应引起的模式竞争，从而避免了在室温下不稳定的单波长激射，实现了多波长掺铒光纤激光器的稳定输出。为了获得平坦的多波长输出，在谐振腔里使用了一个损耗峰位于1530nm处的长周期光纤光栅，以获得较为平坦的增益谱。通过两个3dB耦合器制成的反射型梳状滤波器的滤波作用，实验中观察到稳定的多波长激射，相邻波长间隔约为0．45nm。中心9个波长的输出功率平坦度为10dB，边模抑制比大于25dB。