Welding of Al alloy plates using a novel high-average-power pulsed CO2 laser

A novel high-average-power pulsed CO2 laser with a unique electrode structure is presented. The operation of a 5-kW transverse-flow CO2 laser with the preionized pulse-train switched technique results in pulsation of the laser power, and the average laser power is about 5 kW. The characteristic of this technique is switching the preionized pulses into pulse trains so as to use the small preionized power (hundreds of watts) to control the large main-discharge power (tens of kilowatts). By this means, the cost and the complexity of the power supply are greatly reduced. The welding of LF2, LF21, LD2, and LY12 aluminum alloy plates has been successfully achieved using this laser. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Welding of Al alloy plates using a novel high-average-power pulsed CO2 laser

A novel high-average-power pulsed CO2 laser with a unique electrode structure is presented. The operation of a 5-kW transverse-flow CO2 laser with the preionized pulse-train switched technique results in pulsation of the laser power, and the average laser power is about 5 kW. The characteristic of this technique is switching the preionized pulses into pulse trains so as to use the small preionized power (hundreds of watts) to control the large main-discharge power (tens of kilowatts). By this means, the cost and the complexity of the power supply are greatly reduced. The welding of LF2, LF21, LD2, and LY12 aluminum alloy plates has been successfully achieved using this laser. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Epitaxial growth of ZnO films on (100) and (001) gamma-LiAlO2 substrates by pulsed laser deposition

Structural and optical properties were investigated for ZnO films grown on (100) and (001) gamma-LiAlO2 (LAO) substrates by pulsed laser deposition method. According XRD results, it is intuitionistic that (100) LAO is suitable for fabricating high quality ZnO film, while (001) LAO is unsuitable. The FWHM of XRD, stress in film and FWHM of UV PL spectra for ZnO films on (100) LAO show a decreasing with increasing substrate temperature from 300 to 600 degrees C. ZnO film fabricated at 600 degrees C has the greatest grain size, the smallest stress (0.47 Gpa) and PL FWHM value (similar to 85 meV). This means that the substrate temperature of 600 degrees C is optimum for ZnO film deposited on (100) LAO. Moreover, it was found that the UV PL spectra intensity of ZnO film is not only related to the grain size and stoichiometric, but also depends on the stress in the film.

Epitaxial growth of ZnO thin films on LiGaO2 substrates by pulsed-laser deposition

Lattice-matched (Delta(a/a) = 1.8-3.4%) (001) LiGaO2 substrates have been employed for the first time to grow ZnO thin films by pulsed-laser deposition at 350-650 degrees C with oxygen partial pressure of 20Pa. XRD shows that a highly c-axis-oriented ZnO film can be deposited on (001) LiGaO2 substrate at 500 degrees C. AFM images reveal the surfaces of as-deposited ZnO films are smooth and root-mean-square values are 6.662, 5.765 and 6.834 nm at 350, 500 and 650 degrees C, respectively. PL spectra indicate only near-band-edge UV emission appears in the curve of ZnO film deposited at 500 degrees C. The deep-level emission of ZnO film deposited at 650 degrees C probably results from Li diffusion into the film. All the results illustrate substrate temperature plays a pretty important role in obtaining ZnO film with a high quality on LiGaO2 substrate by pulsed-laser deposition. (c) 2006 Elsevier B.V. All rights reserved.

Growth and properties of ZnO thin film on beta-Ga2O3(100) substrate by pulsed laser deposition

Zinc oxide (ZnO) thin films were grown on the beta-Ga2O3 (100) substrate by pulsed laser deposition (PLD). X-ray diffraction (XRD) indicated that the ZnO films are c-axis oriented. The optical and electrical properties of the films were investigated. The room temperature Photoluminescence (PL) spectrum showed a near band emission at 3.28 eV with two deep level emissions. Optical absorption indicated a visible exciton absorption at room temperature. The as-grown films had good electrical properties with the resistivities as low as 0.02 Omega cm at room temperature. Thus, beta-Ga2O3 (100) substrate is shown to be a suitable substrate for fabricating ZnO film. (c) 2006 Elsevier B.V. All rights reserved.

Optical properties of ZnO thin film on gamma-LiAlO2 substrate grown by pulsed laser deposition

Optical properties were investigated of ZnO thin films grown oil (100) gamma-LiAlO2 (LAO) substrates by pulsed laser deposition method. C-axis oriented ZnO film was grown oil (100) LAO substrate at the substrate temperature of 550 degrees C. The transmittances of the films were over 85%. Peaks attributed to excitons were seen in the absorption spectra, indicating that the thin films have high crystallinity. Photoluminescence spectra were observed at room temperature; the peak at 550 urn is ascribed to oxygen vacancies in the ZnO films caused by the diffusion of Li from the substrate into the film during deposition. (c) 2005 Elsevier B.V. All rights reserved.

Comparison of ZnO films grown on before- and after-vapor transport equilibration (VTE) LiAlO2 substrates by pulsed laser deposition (PLD)

About Phi 45 mm LiAlO2 single crystal was grown by Czochralski (Cz) technique. However, the full-width at half-maximum (FWHM) value was high to 116.9 arcsec. After three vapor transport equilibration (VTE) processes, we can obtain high-quality LiAlO2 slice with the FWHM value of 44.2 arcsec. ZnO films were fabricated on as-grown slices and after-VTE ones by pulsed laser deposition (PLD). It was found that ZnO films on the two slices have similar crystallinity, optical transmittance and optical band gap at room temperature. These results not only show that LAO substrate is suitable for ZnO growth, but also prove that the crystal quality of LAO substrate slightly affects the structural and optical properties of ZnO film.

Deposition of Au/TiO2 film by pulsed laser

Au nanoparticles, which were photoreduced by a Nd:YAG laser in HAuCl4 solution containing TiO2 colloid and accompanied by the TiO2 particles, were deposited on the substrate surface. The film consisting of Au/TiO2 particles was characterized by the absorption spectra, scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis. The adhesion between the film and substrate was evaluated by using adhesive tape test. It was found that the presence of TiO2 dramatically enhanced the adhesion strength between the film and the substrate, as well as the deposition rate of film. The mechanism for the deposition of Au/TiO2 film was also discussed. (c) 2005 Elsevier B.V. All rights reserved.

Structural, morphological and optical properties of ZnO thin films grown on gamma-LiAlO2 substrate by pulsed laser deposition

ZnO thin films were deposited on the substrates of (100) gamma-LiAlO2 at 400, 550 and 700 degrees C using pulsed laser deposition (PLD) with the fixed oxygen pressure of 20 Pa, respectively. When the substrate temperature is 400 degrees C, the grain size of the film is less than 1 mu m observed by Leitz microscope and measured by X-ray diffraction (XRD). As the substrate temperature increases to 550 degrees C, highly-preferred c-orientation and high-quality ZnO film can be attained. While the substrate temperature rises to 700 degrees C, more defects appears on the surface of film and the ZnO films become polycrystalline again possibly because more Li of the substrate diffused into the ZnO film at high substrate temperature. The photoluminescence (PL) spectra of ZnO films at room temperature show the blue emission peaks centered at 430 nm. We suggest that the blue emission corresponds to the electron transition from the level of interstitial Zn to the valence band. Meanwhile, the films grown on gamma-LiAlO2 (LAO) exhibit green emission centered at 540 nm, which seemed to be ascribed to excess zinc and/or oxygen vacancy in the ZnO films caused by diffusion of Li. from the substrates into the films during the deposition.

Nonpolar a-plane ZnO films fabricated on (302)gamma-LiAlO2 by pulsed laser deposition

Nonpolar a-plane (1 1 2 0) ZnO films are fabricated on (3 0 2)gamma-LiAlO2 substrate by pulsed laser deposition. When substrate temperature is low, c-plane ZnO is dominant. As growth temperature increases to similar to 500 degrees C, pure (1 1 2 0)-oriented ZnO film can be obtained. The X-ray rocking curve of a-plane ZnO film broadens sharply when growth temperature is up to similar to 650 degrees C; such a broadening may be related to the anisotropic lateral growth rate of (1 12 0)-oriented ZnO grains. Atomic force microscopy reveals the surface morphology changes of ZnO films deposited at different temperatures. Raman spectra reveal that a compressive stress exists in the a-plane ZnO film. (C) 2007 Published by Elsevier B.V.

Room-temperature cw and pulsed operation of a diode-end-pumped Tm:YAP laser

We report the continuous-wave and acousto-optical Q-switched operation of a diode-end-pumped Tm:YAP laser. Continuous-wave output power of 3.5 W at 1.99 mu m was obtained under the absorbed pump power of 14 W. Under Q-switched laser operation, the average output power increased from 1.57 W to 2.0 W, with an absorbed pump power of 12.6 W, as the repetition rate increased from 1 kHz to 10 kHz. The maximum Q-switched pulse energy was 1.57 mJ with a repetition rate of 1 kHz. The minimum pulse width was measured to be about 80 ns, corresponding to a peak power of 19.6 kW.

Effects of brominated flame retardants and brominated dioxins on steroidogenesis in H295R human adrenocortical carcinoma cell line

Brominated flame retardants (BFRs) and brominated dioxins are emerging persistent organic pollutants that are ubiquitous in the environment and can be accumulated by wildlife and humans. These chemicals can disturb endocrine function. Recent studies have demonstrated that one of the mechanisms of endocrine disruption by chemicals is modulation of steroidogenic gene expression or enzyme activities. In this study, an in vitro assay based on the H295R human adrenocortical carcinoma cell line, which possesses most key genes or enzymes involved in steroidogenesis, was used to examine the effects of five bromophenols, two polybrominated biphenyls (PBBs 77 and 169), 2,3,7,8-tetrabromodibenzo-p-dioxin, and 2,3,7,8-tetrabromodibenzofuran on the expression of 10 key steroidogenic genes. The H295R cells were exposed to various BFR concentrations for 48 h, and the expression of specific genescytochrome P450 (CYP11A, CYP11B2, CYP17, CYP19, and CYP21), 3 beta-hydroxysteroid dehydrogenase (3PHSD2), 17 beta-hydroxysteroid dehydrogenase (17 beta HSD1 and 17 beta HSD4), steroidogenic acute regulatory protein (StAR), and 3-hydroxy-3-methylglutaryl coenzyme A reductase (HMGR)-was quantitatively measured using real-time polymerase chain reaction. Cell viability was not affected at the doses tested. Most of the genes were either up- or down-regulated, to some extent, by BFR exposure. Among the genes tested, 3PHSD2 was the most markedly up-regulated, with a range of magnitude from 1.6- to 20-fold. The results demonstrate that bromophenol, bromobiphenyls, and bromodibenzo-p-dioxin/furan are able to modulate steroidogenic gene expression, which may lead to endocrine disruption.