Nonpolar a-plane ZnO films fabricated on (302)gamma-LiAlO2 by pulsed laser deposition


Autoria(s): Zhou Shengming; Zhou Jianhua; Huang Taohua; 李抒智; Zou Jun; Wang Jun; Zhang Xia; Li Xiaomin; Zhang Rong
Data(s)

2007

Resumo

Nonpolar a-plane (1 1 2 0) ZnO films are fabricated on (3 0 2)gamma-LiAlO2 substrate by pulsed laser deposition. When substrate temperature is low, c-plane ZnO is dominant. As growth temperature increases to similar to 500 degrees C, pure (1 1 2 0)-oriented ZnO film can be obtained. The X-ray rocking curve of a-plane ZnO film broadens sharply when growth temperature is up to similar to 650 degrees C; such a broadening may be related to the anisotropic lateral growth rate of (1 12 0)-oriented ZnO grains. Atomic force microscopy reveals the surface morphology changes of ZnO films deposited at different temperatures. Raman spectra reveal that a compressive stress exists in the a-plane ZnO film. (C) 2007 Published by Elsevier B.V.

Identificador

http://ir.siom.ac.cn/handle/181231/5933

http://www.irgrid.ac.cn/handle/1471x/12441

Idioma(s)

英语

Fonte

Zhou Shengming;Zhou Jianhua;Huang Taohua;李抒智;Zou Jun;Wang Jun;Zhang Xia;Li Xiaomin;Zhang Rong.,J. Cryst. Growth,2007,303(2):510-514

Palavras-Chave #光学材料;晶体 #atomic force microscopy #substrates #X-ray diffraction #laser epitaxy #semiconducting II-VI materials
Tipo

期刊论文