Nonpolar a-plane ZnO films fabricated on (302)gamma-LiAlO2 by pulsed laser deposition
Data(s) |
2007
|
---|---|
Resumo |
Nonpolar a-plane (1 1 2 0) ZnO films are fabricated on (3 0 2)gamma-LiAlO2 substrate by pulsed laser deposition. When substrate temperature is low, c-plane ZnO is dominant. As growth temperature increases to similar to 500 degrees C, pure (1 1 2 0)-oriented ZnO film can be obtained. The X-ray rocking curve of a-plane ZnO film broadens sharply when growth temperature is up to similar to 650 degrees C; such a broadening may be related to the anisotropic lateral growth rate of (1 12 0)-oriented ZnO grains. Atomic force microscopy reveals the surface morphology changes of ZnO films deposited at different temperatures. Raman spectra reveal that a compressive stress exists in the a-plane ZnO film. (C) 2007 Published by Elsevier B.V. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Zhou Shengming;Zhou Jianhua;Huang Taohua;李抒智;Zou Jun;Wang Jun;Zhang Xia;Li Xiaomin;Zhang Rong.,J. Cryst. Growth,2007,303(2):510-514 |
Palavras-Chave | #光学材料;晶体 #atomic force microscopy #substrates #X-ray diffraction #laser epitaxy #semiconducting II-VI materials |
Tipo |
期刊论文 |