Long-term (1956-1999) dynamics of phosphorus in a shallow, subtropical Chinese lake with the possible effects of cyanobacterial blooms

This paper describes the long-term dynamics of phosphorus concentrations in both the lake water and the sediment in a subtropical Chinese lake, Lake Donghu. The total phosphorus (TP) concentration in the lake water experienced an upward trend from the 1950s, and peaked in 1983/1984, but declined obviously afterwards. From the 1950s to the 1990s, TP content in the upper 10 cm sediment of the lake increased steadily from 0.307 to 1.68 mg Pg DW-1 at Station I and from 0.151 to 0.89 mg Pg DW-1 at Station II, respectively. The TP increase in the lake water before mid-1980s was mainly attributed to the massive input of sewage P. The outbreak of cyanobacterial blooms coincided with the peaks of TP and Orthophosphate (PO4-P) in the water in mid-1980s, and the maximum TP of the water reached as high as 1.349 mg/1 at Station I and 0.757 mg/l at Station II (in 1984), respectively. The declines of TP and PO4-P in the water after mid-1980s was coincident with the disappearance of cyanobacterial bloom. (C) 2001 Elsevier Science Ltd. All rights reserved.

Budgets and dynamics of nitrogen and phosphorus in a shallow, hypereutrophic lake in China

Budgets and dynamics of nitrogen and phosphorus in Lake Donghu were investigated from Oct. 1997 to Sept. 1999. The water residence time was estimated to be 89 days in 1997-1998 and 124 days in 1998-1999. The total external loadings were 53 g N m(-2) yr(-1) and 3.2 g P m(-2) yr(-1) in 1997-1998, and 42 g N m(-2) yr(-1) and 3.1 g P m(-2) yr(-1) in 1998-1999. On average, about 80% of nitrogen and phosphorus input was from sewage outlets, while the rest was from land runoff and precipitation. Ammonium ion was the most abundant form of inorganic nitrogen in the sewage. The nutrient output was mainly through water outflow and fish catch. The percentages of nutrients in fish were estimated to be 7.8%-11.2% for nitrogen and 47.6%- 49.6% for phosphorus. Lake Donghu has a very high nutrient retention (63% for nitrogen and 79% for phosphorus) mainly due to its closure and long water residence time. Sedimentation is an important nutrient retention mechanism in this lake. Using mass balance method, we estimated that denitrification of Lake Donghu involves about 50% of the retained nitrogen. Lake Donghu is rich in inorganic nitrogen and phosphorus and showed great seasonal variation.

Growth of Chlorella vulgaris in cultures with low concentration dimethoate as source of phosphorus

The growth response of Chlorella vulgaris to low concentration of dimethoate, an organophosphorus pesticide, was studied. Results show that cell density, protein content, chlorophyll pigment and alkaline phosphatase activity were all increased, which indicates that low concentration dimethoate can accelerate growth of Chlorella vulgaris. (C) 1997 Elsevier Science Ltd.

ROLE OF PHOSPHORUS CYCLING IN ALGAL METABOLISM AND ALGAL SUCCESSION IN LAKE DONGHU, CHINA

The role of phosphorus cycling in algal metabolism was studied in a shallow lake, Donghu, in Wuhan using the methods of measuring cell quota C, N and P, and calculating nutrients uptake rate by algal photosynthesis. The mean daily phosphorus uptake rate of phytoplankton varied between 0.04-0.11 and 0.027-0.053 g/m2/d in station I and station II respectively. The turnover time of phosphorus in phytoplankton metabolism ranged from 0.75-5.0 days during 1979-1986. The available P was 0.176 (+/- 0.156) g/m3 (mean +/- SD) in 1982 and 0.591 (+/- 0.24) g/m3 in 1986. The relationship between P/B ratio (Y) and TP (X: mg/l) was described by the following regression equation Y = 1.163 + 0.512logX (r = 0.731, P < 0.001). The dynamics of algal biomass and algal species succession were monitored as the indicators of environmental enrichment. The small-sized algae have replaced the blue-green algae as the dominant species during 1979-1986. The small-sized algae include Merismopedia glauca, Cryptomonas ovata, Cryptomonas erosa, several species Cyclotella. There has been drastic decrease in algal biomass and an obvious increase in P/B ratio. A nutrient competition hypothesis is proposed to explain the reason of the disappearance of blue-green algae bloom. The drastic change in algal size and the results in high P/B ratio (reaching a maximum mean daily ratio of 1.09 in 1986) may suggest a transition of algal species from K-selection to r-selection in Lake Donghu.

Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences

Photo luminescence (PL) spectroscopy has been used to study InP annealed in phosphorus and iron phosphide ambiences. Noticeable PL emissions related with thermally induced defects have been detected in undoped InP annealed in iron phosphide ambience. Origins of the PL emissions have been discussed. (c) 2004 Elsevier Ltd. All rights reserved.

Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC

High-dose ion implantation of phosphorus into 4H-SiC (0001) has been investigated with three different ion fluxes ranging from 1.0 to 4.0 x 10(12) P(+)cm(-2.)s(-1) and keeping the implantation dose constant at 2.0 x 10(15) P(+)cm(-2). The implantations are performed at room temperature and subsequently annealed at 1500 degrees C. Photoluminescence and Raman scattering are employed to investigate the implantation-induced damages and the residual defects after annealing. The electrical properties of the implanted layer are evaluated by Hall effect measurements on the sample with a van der Pauw configuration. Based on these results, it is revealed that the damages and defects in implanted layers can be greatly reduced by decreasing the ion flux. Considering room temperature implantation and a relatively low annealing temperature of 1500 degrees C, a reasonably low sheet resistance of 106 Omega/square is obtained at ion flux of 1.0 x 10(12) P(+)cm(-2.)s(-1) with a donor concentration of 4.4 x 10(19)cm(-3).

Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances

Microdefects originating from impurity-dislocation interactions in undoped InP that had been annealed in phosphorus and iron phosphide ambiances have been studied using optical microscopy. The electrical uniformity of the annealed wafer is improved by removing impurity aggregation around dislocations and by eliminating impurity striations in the annealing process. Compared to as-grown Fe-doped semi-insulating (SI) material, SI wafers obtained by annealing undoped InP in iron phosphide ambiances have better uniformity. This is attributed to the avoidance of Fe aggregation around dislocations and dislocation clusters, Fe precipitation and impurity striations, and is related to the use of a low concentration of Fe in the annealed material. The influence of Fe diffusion on the migration of dislocations in the annealing process has been studied and reviewed. (C) 2003 Elsevier B.V. All rights reserved.

Effects of 9-cyanoanthracene and anthracene adsorption on the photoluminescence of porous silicon

The photoluminescence of porous silicon can be modified sensitively by surface adsorption of different kinds of molecules. A quite different effects of 9-cyanoanthracene and anthracene adsorption on the photoluminescence of porous silicon were observed. The adsorption of 9-cyanoanthracene induced the photoluminescence enhancement, while anthracene adsorption resulted in photoluminescent quenching. An explanation of the interaction of adsorbates with surface defect sites of porous silicon was suggested and discussed. (C) 1998 Elsevier Science S.A.

THE ADSORPTION OF O2 ON FESI SURFACES

The initial adsorption stages and the interaction of oxygen on FeSi surfaces have been studied as a function of exposure and annealing temperature using a variety of techniques including HREELS, AES, LEED, XPS and UPS. O2 was found to adsorb dissociatively on the FeSi surfaces at room temperature. The whole adsorption process can be divided into four stages. Heating promotes the oxidation of Si, and a thin SiO2 overlayer is formed on the surface when annealed at 450-degrees-C, while all FeOx species are reduced. Models for adsorbed atomic O on the FeSi(100) surface exposed to different oxygen exposures have been put forward to account for the observed experimental results.