STUDIES ON INTERFACIAL PHENOMENA OF POLYCRYSTALLINE HG1-XCDXTE THIN-FILM ELECTRODE POLYSULFIDE REDOX SOLUTION

Electrode capacitance and photocurrent spectra of electrodeposited polycrystalline Hg1-xCdxTe thin films of varying (1-x) were measured in polysulfide redox solution, hence the flatband potentional PHI(fb) and the bandgap E(g) of Hg1-xCdxTe thin films obtained. It was of interest to find out that only the location of conduction band E(c) shifts negatively with increasing (1-x) while the valence band E(v), is almost constant. The experimental open circuit photovoltage V0 is smaller than theoretical value V(max) calculated through flatband potential PHI(fb), therefore there is a possibility of promoting the experimental open circuit photovoltage.

DETERMINATION OF THE RATE-CONSTANT OF A CATALYTIC REACTION USING A PARALLEL INCIDENT SPECTROELECTROCHEMICAL CELL

The possibility of determining the rate constant of a catalytic reaction using a parallel incident spectroelectrochemical cell was investigated in this work. Various spectroelectrochemical techniques were examined, including single-potential-step chronoabsorptometry, single-potential-step open-circuit relaxation chronoabsorptometry and double-potential-step chronoabsorptometry. The values determined for the kinetics of the ferrocyanide-ascorbic acid system are in agreement with the reported values. The parallel incident method is much more sensitive than the normal transmission method and can be applied to systems which have smaller molar absorptivities, larger rate constants or lower concentrations.

ELECTROCHEMICAL-BEHAVIOR OF YTTRIUM ION IN LICL-KCL-NACL EUTECTIC MELT

The electrochemical reduction of yttrium ion on a molybdenum electrode in a LiCl-KCl-NaCl eutectic melt at 723 K was found to be almost reversible and to proceed by a one-step three electron reaction. The diffusion coefficient D of the Y(III) ion was measured to be (3.3 +/- 0.4) x 10(-6) cm2 s-1 by cyclic voltammetry, (5.0 +/- 0.9) x 10(-6) cm2 s-1 by the rotating disk electrode method, and (7.1 +/- 0.7) x 10(-6) cm2 s-1 by chronopotentiometry. The D values obtained by the latter two methods are in fairly good agreement with each other. The rather low D value obtained by cyclic voltammetry might be attributed to the fact that yttrium metal can dissolve slightly in the chloride melt. The standard potential of Y(III)/Y(0) couple was determined to be (-3.174 +/- 0.006) V (vs. Cl2/Cl-) by open-circuit potentiometry, (-3.15 +/- 0.02) V (vs. Cl2/Cl-) by the rotating disk electrode method and (-3.16 +/- 0.02) V (vs. Cl2/Cl) by chronopotentiometry. These three values are in good agreement with each other. Several types of Ni-Y intermetallic compounds were found to be formed on a nickel electrode.

SPECTROELECTROCHEMISTRY WITH CYLINDRICAL CARBON-FIBER MICROELECTRODES

Transmittance spectroelectrochemistry can be performed using a group of cylindrical microelectrodes. A dependence of absorbance on electrolytic charge during the potential step was derived. The rate constant of catalytic reaction of the ferrocyanide-ascorbic acid system was determined using single potential step-open circuit relaxation chronoabsorptometry. This is the first report that the reaction can still be considered as a pseudo-first-order reaction when the concentration of ascorbic acid is close to and even slightly lower than the concentration of ferrocyanide. The determined rate constant is in agreement with the reported value. The reason is that the diffusion of ascorbic acid toward electrode surface is contractive and the diffusion of the electrogenerated ferricyanide from the electrode surface to the bulk of solution is expansive.

Effect of Process Conditions on Microstructure and Corrosion Resistance of Cold-Sprayed Ti Coatings

Ti and Ti alloys can be applied to steels as a protective coating in view of its excellent resistance to corrosive environment. Cold spraying, as a new coating technique, has potential advantages in fabrication of Ti coating in comparison with conventional thermal spraying techniques. In this study, Ti coatings were prepared on carbon steel substrates by cold spraying via controlling the process conditions. The microstructure of coatings was observed by SEM. The porosity of coatings was estimated by image analysis and the bond strength was tested for comparison of the process conditions. Potentiodynamic polarization and open-circuit potential (OCP) measurements were performed to understand the corrosion behavior of the coatings. The SEM examination shows that the coatings become more compact with the increases of pressure and temperature of driving gas. The potentiodynamic polarization curves indicate that the coating which has lower porosity has lower corrosion current. The polarization and OCP measurement reveal that cold-sprayed Ti coating can provide favorable protection to carbon steel substrate. The polishing treatment of coating surface polishes the rough outer layer including the small pores as well as decreases the actual surface area of the coating, leading to the considerable improvement of corrosion resistance.

Circuit design and simulation of a CMOS-based preamplifier for brain neural signals

A novel CMOS-based preamplifier for amplifying brain neural signal obtained by scalp electrodes in brain-computer interface (BCI) is presented in this paper. By means of constructing effective equivalent input circuit structure of the preamplifier, two capacitors of 5 pF are included to realize the DC suppression compared to conventional preamplifiers. Then this preamplifier is designed and simulated using the standard 0.6 mu m MOS process technology model parameters with a supply voltage of 5 volts. With differential input structures adopted, simulation results of the preamplifier show that the input impedance amounts to more than 2 Gohm with brain neural signal frequency of 0.5 Hz-100 Hz. The equivalent input noise voltage is 18 nV/Hz(1/2). The common mode rejection ratio (CMRR) of 112 dB and the open-loop differential gain of 90 dB are achieved.

Characterization and expression analysis of Paralichthys olivaceus voltage-dependent anion channel (VDAC) gene in response to virus infection

Voltage-dependent anion channel (VDAC, also known as mitochondrial porin) is acknowledged to play an important role in stress-induced mammalian apoptosis. In this study, Paralichthys olivaceus VDAC (PoVDAC) gene was identified as a virally induced gene from Scophthalmus Maximus Rhabdovirus (SMRV)-infected flounder embryonic cells (FEC). The full length of PoVDAC cDNA is 1380 bp with an open reading frame of 852 bp encoding a 283 amino acid protein. The deduced PoVDAC contains one alpha-helix, 13 transmembrane beta-strands and one eukaryotic mitochondrial porin signature motif. Constitutive expression of PoVDAC was confirmed in all tested tissues by real-time PCR. Further expression analysis revealed PoVDAC mRNA was upregulated by viral infection. We prepared fish antiserum against recombinant VDAC proteins and detected the PoVDAC in heart lysates from flounder as a 32 kDa band on western blot. Overexpression of PoVDAC in fish cells induced apoptosis. Immunofluoresence localization indicated that the significant distribution changes of PoVDAC have occurred in virus-induced apoptotic cells. This is the first report on the inductive expression of VDAC by viral infection, suggesting that PoVDAC might be mediated flounder antiviral immune response through induction of apoptosis. (c) 2007 Elsevier Ltd. All rights reserved.

Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector

The unexpected decrease in measured responsivity observed in a specific GaN Schottky barrier photodetector (PD) at high reverse bias voltage was investigated and explained. Device equivalent transforms and small signal analysis were performed to analyse the test circuit. On this basis, a model was built which explained the responsivity decrease quantitatively. After being revised by this model, responsivity curves varying with bias voltage turned out to be reasonable. It is proved that the decrease is related to the dynamic parallel resistance of the photodiode. The results indicate that with a GaN Schottky PD, the choice of load resistance is restricted according to the dynamic parallel resistance of the device to avoid responsivity decay at high bias voltage.

Novel hybrid voltage controlled ring oscillators using single electron and MOS transistors

This paper proposes two kinds of novel hybrid voltage controlled ring oscillators (VCO) using a single electron transistor (SET) and metal-oxide-semiconductor (MOS) transistor. The novel SET/MOS hybrid VCO circuits possess the merits of both the SET circuit and the MOS circuit. The novel VCO circuits have several advantages: wide frequency tuning range, low power dissipation, and large load capability. We use the SPICE compact macro model to describe the SET and simulate the performances of the SET/MOS hybrid VCO circuits by HSPICE simulator. Simulation results demonstrate that the hybrid circuits can operate well as a VCO at room temperature. The oscillation frequency of the VCO circuits could be as high as 1 GHz, with a -71 dBc/Hz phase noise at 1 MHz offset frequency. The power dissipations are lower than 2 uW. We studied the effect of fabrication tolerance, background charge, and operating temperature on the performances of the circuits.

Rate-equation-based circuit model of high-speed semiconductor lasers

Based oil rare equations of semiconductor laser, a symbolically-defined model for optical transmission system performance evaluation and network characterization in both time- and frequency domains is presented. The steady-state and small-signal characteristics, such as current-photon density curve, current-voltage curve, and input impedance, call be predicted from this model. Two important dynamic characteristics, second-order harmonic distortion and two-tone third-order intermodulation products, are evaluated under different driving conditions. Experiments show that the simulated results agree well with the published data. (c) 2007 Wiley Periodicals, Inc.

A small signal equivalent circuit model for resonant tunnelling diode

We report a resonant tunneling diode (RTD) small signal equivalent circuit model consisting of quantum capacitance and quantum inductance. The model is verified through the actual InAs/In0.53Ga0.47As/AlAs RTD fabricated on an InP substrate. Model parameters are extracted by fitting the equivalent circuit model with ac measurement data in three different regions of RTD current-voltage (I-V) characteristics. The electron lifetime, representing the average time that the carriers remain in the quasibound states during the tunneling process, is also calculated to be 2.09 ps.

A novel fast lock-in phase-locked loop frequency synthesizer with direct frequency presetting circuit

This paper proposes a novel, fast lock-in, phase-locked loop (PLL) frequency synthesizer. The synthesizer includes a novel mixed-signal voltage-controlled oscillator (VCO) with a direct frequency presetting circuit. The frequency presetting circuit can greatly speed up the lock-in process by accurately the presetting oscillation frequency of the VCO. We fully integrated the synthesizer in standard 0.35 mu m, 3.3 V complementary metal-oxide-semiconductors (CMOS) process. The entire chip area is only 0.4 mm(2). The measured results demonstrate that the synthesizer can speed up the lock-in process significantly and the lock-in time is less than 10 mu s over the entire oscillation frequency range. The measured phase noise of the synthesizer is -85 dBc/Hz at 10 kHz offset. The synthesizer avoids the tradeoff between the lock-in speed and the phase noise/spurs. The synthesizer monitors the chip temperature and automatically compensates for the variation in frequency with temperature.

Nanoelectronic Circuit Architectures Based on Single-Electron Turnstiles

Single-electron devices (SEDs) have ultra-low power dissipation and high integration density, which make them promising candidates as basic circuit elements of the next generation VLSI circuits. In this paper, we propose two novel circuit single-electron architectures: the single-electron simulated annealing algorithm (SAA) circuit and the single-electron cellular neural network (CNN). We used the MOSFET-based single-electron turnstile [1] as the basic circuit element. The SAA circuit consists of the voltage-controlled single-electron random number generator [2] and the single-electron multiple-valued memories (SEMVs) [3]. The random-number generation and variable variations in SAA are easily achieved by transferring electrons using the single-electron turnstile. The CNN circuit used the floating-gate single-electron turnstile as the neural synapses, and the number of electrons is used to represent the cells states. These novel circuits are promising in future nanoscale integrated circuits.

A novel DC-DC charge pump circuit for passive RFID transponder

This paper presents a low-voltage, high performance charge pump circuit suitable for implementation in standard CMOS technologies. The proposed charge pump has been used as a part of the power supply section of fully integrated passive radio frequency identification(RFID) transponder IC, which has been implemented in a 0.35-um CMOS technology with embedded EEPROM offered by Chartered Semiconductor. The proposed DC/DC charge pump can generate stable output for RFID applications with low power dissipation and high pumping efficiency. The analytical model of the voltage multiplier, the comparison with other charge pumps, the simulation results, and the chip testing results are presented.

A CMOS front-end circuit for SONET OC-96 receiver

An optical receiver front-end for SONET OC-96 receivers was analyzed and designed in 0.18 mu m CMOS process. It consists of a transimpedance amplifier (TIA) and a limiting amplifier (LA). The TIA takes a fully differential configuration, and regulated cascode (RGC) input stage is implemented. The LA was realized by five cascaded identical gain stages with active inductor load. The TIA achieved 4.2GHz bandwidth for 0.5pF photodiode (PD) capacitance and 1.2k 0 transimpedance gain. The LA achieved 5.4GHz bandwidth and 29dB voltage gain. The optical sensitivity is -19dBm at 5-Gb/s for a bit-error rate of 10(-12), and it dissipates 45.5mW for I.8V supply.