A small signal equivalent circuit model for resonant tunnelling diode
| Data(s) |
2006
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|---|---|
| Resumo |
We report a resonant tunneling diode (RTD) small signal equivalent circuit model consisting of quantum capacitance and quantum inductance. The model is verified through the actual InAs/In0.53Ga0.47As/AlAs RTD fabricated on an InP substrate. Model parameters are extracted by fitting the equivalent circuit model with ac measurement data in three different regions of RTD current-voltage (I-V) characteristics. The electron lifetime, representing the average time that the carriers remain in the quasibound states during the tunneling process, is also calculated to be 2.09 ps. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Ma L (Ma Long); Huang YL (Huang Ying-Long); Zhang Y (Zhang Yang); Wang LC (Wang Liang-Chen); Yang FH (Yang Fu-Hua); Zeng YP (Zeng Yi-Ping) .A small signal equivalent circuit model for resonant tunnelling diode ,CHINESE PHYSICS LETTERS,2006,23(8):2292-2295 |
| Palavras-Chave | #光电子学 #TRANSISTORS #POWER |
| Tipo |
期刊论文 |
