Electro-optic modulation of light propagating near the optic axis with any polarization in uniaxial crystals

The electro-optic effect in uniaxial crystals for light propagating near the optic axis with any polarization has been analyzed. The passive and the electrically induced birefringences and the rotation of polarization direction in crystals have been calculated, and the conoscopic interference figures under orthogonal polariscopes for different polarizer directions have been plotted. The extinction areas caused by the rotation of polarization direction in crystals change with the polarizer direction, but the two heads of the induced optical axes do not vary, which are always on the induced principal axis with bigger refractive index. The directions of polariscopes are always extinction, and the +/- 45 degrees directions with polarizer are always complete transmission. The conoscopic interference figures for LiNbO3 crystals have been demonstrated experimentally by rotating polariscopes directions, which accord with the theoretically calculating plots. (c) 2006 Elsevier GmbH. All rights reserved.

Red laser-induced domain inversion in MgO-doped lithium niobate crystals

A laser beam at wavelength 647 nm is focused on a sample of 5 mol% MgO-doped lithium niobate crystal for domain inversion by a conventional external electric field. In this case, a reduction of 36% in the electric field required for domain nucleation (nucleation field) is observed. To the best of our knowledge, it is the longest wavelength reported for laser-induced domain inversion. This extends the spectrum of laser inducing, and the experimental results are helpful to understand the nucleation dynamics under laser illumination. The dependence of nucleation fields on intensities of laser beams is analysed in experiments.

Invertible dark-center diffraction of the metal film induced by femtosecond laser

We found reversible dark-center diffraction of the transmitted probe beam passing through the chromium film. which is induced by the pump femtosecond laser. The dark-center diffraction of I he transmitted probe beam appears and disappears with and without the pump beam. A view of diffractive optics with binary phase plate is put forward, which explains the reversible dark-center diffractive optical phenomenon. The pre-ablated hole on the metal film can be regarded as a uniform light filed without phase modulation, the Surrounding Circular part around the pre-ablated hole can be regarded as "phase modulated". Therefore, this diffraction optic view might be helpful for us to understand the phase change of the metal film introduced by the femtosecond laser pulse. (C) 2008 Elsevier B.V, All rights reserved.

Prism coupling of ultrashort light pulses into waveguides

We discuss coupling of ultrashort light pulses into waveguides by use of a prism waveguide coupler configuration. Theoretical analysis indicates that an extra loss induced by the short coherence times of ultrashort pulses, which has a strong effect on the reflected light and the optimum coupling condition, appears in the waveguide. Numerical simulations show that the reflectance strongly depends on the coherence times of ultrashort pulses. A method for realizing optimum coupling by compensating for the extra loss is proposed as well in this paper. A preliminary experiment of employing ultrashort pulses with different coherence times was carried out, and good agreement between theory and experiment was obtained. (c) 2006 Optical Society of America.

Nanosecond nonlinear absorption in Au and Ag nanoparticles precipitated glasses induced by a femtosecond laser

We obtain Au and Ag nanoparticles precipitated in glasses by irradiation of focused femtosecond pulses, and investigate the nonlinear absorptions of the glasses by using Z-scan technique with ns pulses at 532 nm. We observe the saturable absorption behavior for An nanoparticles precipitated glasses and the reverse saturable ones for Ag ones. We also obtain, by fitting to the experimental results in the light of the local field effect near and away from the surface plasmon resonance, chi(m)((3)) = 4.5 x 10(-7) and 5.9 x 10(-8) esu for m the imaginary parts of the third-order susceptibilities for Au and Ag nanoparticles, respectively. The nonlinear response of Au nanoparticles in the glass samples arises mainly from the hot-electron contribution and the saturation of the interband transitions near the surface plasmon resonance, whereas that of Ag nanoparticles in the glass samples from the interband transitions. These show that the obtained glasses can be used as optoelectronic devices suiting for different demands. (c) 2005 Elsevier B.V. All rights reserved.

Thermal stress-induced birefringence in borate glass irradiated by femtosecond laser pulses

Thermal stress-induced birefringence in borate glass which has been irradiated by 800-nm femtosecond laser pulses is observed under cross-polarized light. Due to the high temperature and pressure formed in the focal volume, the material at the edge of the micro-modified region is compressed between the expanding region and the unheated one, then stress emerges. Raman spectroscopy is used to investigate the stress distribution in the micro-modified region and indicates the redistributions of density and refractive index by Raman peak shift. We suggest that this technique can develop waveguide polarizers and Fresnel zone plates in integrated optics.

Light histories influence the impacts of solar ultraviolet radiation on photosynthesis and growth in a marine diatom, Skeletonema costatum

Phytoplanktonic species acclimated to high light are known to show less photoinhibition. However, little has been documented on how cells grown under indoor conditions for decades without exposure to UV radiation (UVR, 280-400 nm) would respond differently to solar UVR compared to those in situ grown under natural solar radiation. Here, we have shown the comparative photosynthetic and growth responses to solar UVR in an indoor-(IS) and a naturally grown (WS) Skeletonema costatum type. In short-term experiment (<1 day), phi(PSII) and photosynthetic carbon fixation rate were more inhibited by UVR in the IS than in the WS cells. The rate of UVR-induced damages of PSII was faster and their repair was significantly slower in IS than in WS. Even under changing solar radiation simulated for vertical mixing, solar UVR-induced higher inhibition of photosynthetic rate in IS than in WS cells. During long-term (10 days) exposures to solar radiation, the specific growth rate was much lower in IS than WS at the beginning, then increased 3 days later to reach an equivalent level as that of WS. UVR-induced inhibition of photosynthetic carbon fixation in the IS was identical with that of WS at the end of the long-term exposure. The photosynthetic acclimation was not accompanied with increased contents of UV-absorbing compounds, indicating that repair processes for UVR-induced damages must have been accelerated or upgraded. (C) 2008 Elsevier B.V. All rights reserved.

Microcystin-RR-induced apoptosis in tobacco BY-2 cells

Our previous studies showed that microcystin-RR could induce oxidative damage in plant cells as they do with animal cells. However, whether microcystin can induce plant cell apoptosis is still unknown. In this study, the morphological changes of tobacco BY-2 suspension cells exposed to microcystin-RR were observed under light microscopy and transmission electron microscopy, and apoptosis was clearly distinguished by intense perinuclear chromatin margination, condensation of nuclear chromatin after 6d exposure of 50 mg/L (about 50 mu M) microcystin-RR. We also found that microcystin-RR can induce tobacco cell apoptosis in a dose- and time-dependent manner with flow cytometry analysis. Our study provides the first evidence that microcystins can induce plant cell apoptosis. (c) 2006 Elsevier Ltd. All rights reserved.

Growth of Potamageton maackianus under low-light stress in eutrophic water

Decline of submersed macrophytes in Lake Donghu of China with the progress of eutrophication is assumedly due to low light stress by algae blooming. I conducted a laboratory experiment to study the impact of low-light stress on the growth of Potamogeton maackianus A. Been, a dominant submersed macrophyte of the lake before the 1970s. Plants were grown for six weeks in aquaria with Lake Donghu sediment and enriched water. Light delivered to aquaria was adjusted to simulate the typical Lake Donghu light intensities that exist at several water depths from 0.6m to 1.7m. Biomass growth of the plant was inversely related to light intensity at the simulated depths of greater than or equal to 1.0m (r = 0.96, p < 0.05, n=6) and was negative at the depths of greater than or equal to 1.4m. These results indicate that photosynthetic light saturation and compensation points of the plant in Lake Donghu should be ca. 0,9m and ca. 1.5m depths, respectively. Chlorophyll content, growth of main shoot, total shoot lengths and density of the plant all peaked at 1.2-1.3m simulated depths. These results indicate that P. maackianus responds to low light stress primarily by elongation of shoots, and increase of density. Its biomass growth and nutrient uptake rate did not correlate with the accelerated shoot growth. Below the light intensities of water deeper than 1.2-1.3m, shoot growth rate decreased. The flexible tolerant strategy of P. maackianus to low-light stress suggests that the disappearance of this plant from the lake was not mainly due to eutrophication-induced low-light stress.

Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices

To form low-resistance Ohmic contact to p-type GaN, InGaN/GaN multiple quantum well light emitting diode wafers are treated with boiled aqua regia prior to Ni/Au (5 nm/5 nm) film deposition. The surface morphology of wafers and the current-voltage characteristics of fabricated light emitting diode devices are investigated. It is shown that surface treatment with boiled aqua regia could effectively remove oxide from the surface of the p-GaN layer, and reveal defect-pits whose density is almost the same as the screw dislocation density estimated by x-ray rocking curve measurement. It suggests that the metal atoms of the Ni/Au transparent electrode of light emitting diode devices may diffuse into the p-GaN layer along threading dislocation lines and form additional leakage current channels. Therefore, the surface treatment time with boiled aqua regia should not be too long so as to avoid the increase of threading dislocation-induced leakage current and the degradation of electrical properties of light emitting diodes

Fabrication and optical characterization of GaN-based nanopillar light emitting diodes

InGaN/GaN-multiple-quantum-well-based light emitting diode ( LED) nanopillar arrays with a diameter of approximately 200nm and a height of 700nm are fabricated by inductively coupled plasma etching using Ni self-assembled nanodots as etching mask. In comparison to the as-grown LED sample an enhancement by a factor of four of photoluminescence ( PL) intensity is achieved after the fabrication of nanopillars, and a blue shift and a decrease of full width at half maximum of the PL peak are observed. The method of additional wet etching with different chemical solutions is used to remove the etch-induced damage. The result shows that the dilute HCl ( HCl:H2O=1:1) treatment is the most effective. The PL intensity of nanopillar LEDs after such a treatment is about 3.5 times stronger than that before treatment.

Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry

The well-width dependence of in-plane optical anisotropy (IPOA) in (001) GaAs/AlxGa1-xAs quantum wells induced by in-plane uniaxial strain and interface asymmetry has been studied comprehensively. Theoretical calculations show that the IPOA induced by in-plane uniaxial strain and interface asymmetry exhibits much different well-width dependence. The strain-induced IPOA is inversely proportional to the energy spacing between heavy- and light-hole subbands, so it increases with the well width. However, the interface-related IPOA is mainly determined by the probability that the heavy- and light-holes appear at the interfaces, so it decreases with the well width. Reflectance difference spectroscopy has been carried out to measure the IPOA of (001) GaAs/AlxGa1-xAs quantum wells with different well widths. Strain- and interface-induced IPOA have been distinguished by using a stress apparatus, and good agreement with the theoretical prediction is obtained. The anisotropic interface potential parameters are also determined. In addition, the energy shift between the interface- and strain-induced 1H1E reflectance difference (RD) structures, and the deviation of the 1L1E RD signal away from the prediction of the calculation model have been discussed.

Study on Frequency Coherence Properties of Light Beams

This paper presents a new concept of frequency coherence in the frequency-time domain to describe the field correlations between two lightwaves with different frequencies. The coherence properties of the modulated beams from lightwave sources with different spectral widths and the modes of Fabry-Wrot (FP) laser are investigated. It is shown that the lightwave and its corresponding sidebands produced by the optical intensity modulation are perfectly coherent. The measured linewidth of the beat signal is narrow and almost identical no matter how wide the spectral width of the beam is. The frequency spacing of the adjacent FP modes is beyond the operation frequency range of the measurement instruments. In our experiment, optical heterodyne technique is used to investigate the frequency coherence of the modes of FP laser by means of the frequency shift induced by the optical intensity modulation. Experiments show that the FP modes are partially coherent and the mode spacing is relatively fixed even when the wavelength changes with ambient temperature, bias current and other factors. Therefore, it is possible to generate stable and narrow-linewidth signals at frequencies corresponding to several mode intervals of the laser.

A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes

The electroluminescence efficiency at room temperature and low temperature (15 K) in a wide-narrow-well InGaN/GaN light-emitting diode with a narrow last well (1.5 nm) and a narrow next-to-last barrier (5 nm) is investigated to study the efficiency droop phenomenon. A reduced droop in the wide wells and a reduced droop at low temperatures reveals that inferior hole transportation ability induced Auger recombination is the root for the droop at high excitation levels.

Improved performance in organic light emitting diodes with a mixed electron donor-acceptor film involved in hole injection

Organic light emitting diodes using a mixed layer of electron acceptor 3, 4, 9, 10 perylenetetracarboxylic dianhydride and electron donor copper phthalocyanine (PTCDA:CuPc) on indium tin oxide (ITO) anodes were fabricated. The device properties were found to be strongly dependent on the thickness of the PTCDA:CuPc film: both the power efficiency and the driving voltage of the device were optimized with a thickness of PTCDA:CuPc ranging from 10 to 20 nm. As compared to the conventional ITO/CuPc hole injection structure, the ITO/PTCDA:CuPc hole injection structure could remarkably enhance both the luminance and the power efficiencies of devices. A mechanism of static-induced, very efficient hole-electron pairs generation in mixed PTCDA:CuPc films was proposed to explain the experimental phenomena. The structural and optical properties of PTCDA:CuPc film were examined as well. (c) 2007 American Institute of Physics.