A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes
| Data(s) |
2009
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|---|---|
| Resumo |
The electroluminescence efficiency at room temperature and low temperature (15 K) in a wide-narrow-well InGaN/GaN light-emitting diode with a narrow last well (1.5 nm) and a narrow next-to-last barrier (5 nm) is investigated to study the efficiency droop phenomenon. A reduced droop in the wide wells and a reduced droop at low temperatures reveals that inferior hole transportation ability induced Auger recombination is the root for the droop at high excitation levels. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Ding, K (Ding, K.); Zeng, YP (Zeng, Y. P.); Wei, XC (Wei, X. C.); Li, ZC (Li, Z. C.); Wang, JX (Wang, J. X.); Lu, HX (Lu, H. X.); Cong, PP (Cong, P. P.); Yi, XY (Yi, X. Y.); Wang, GH (Wang, G. H.); Li, JM (Li, J. M.) .A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes ,APPLIED PHYSICS B-LASERS AND OPTICS,OCT 2009 ,97(2):465-468 |
| Palavras-Chave | #光电子学 |
| Tipo |
期刊论文 |
