Single-mode condition for silicon rib waveguides with trapezoidal cross-section

Single-mode condition for silicon rib waveguides with trapezoidal cross-section was obtained using a numerical method based on imaginary-distance beam propagation method with non-uniform discretization. Both quasi-transverse-electric and quasi-transverse-magnetic modes were investigated. Simulated single-mode condition is given by a modified equation. Comparison with reported results shows that the Marcatili's method is in a better agreement with our results. (C) 2003 Elsevier B.V. All rights reserved.

The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer

The V/III ratio in the initial growth stage of metalorganic chemical vapor deposition has an important influence on the quality of a GaN epilayer grown on a low-temperature AIN buffer layer and c-plane sapphire substrate. A weaker yellow luminescence, a narrower half-width of the X-ray diffraction peak, and a higher electron mobility result when a lower V/III ratio is taken. The intensity of in situ optical reflectivity measurements indicates that the film surface is rougher at the beginning of GaN growth, and a longer time is needed for the islands to coalesce and for a quasi-two dimensional mode growth to start. A comparison of front- and back-illuminated photoluminescence spectra confirms that many threading dislocations are bent during the initial stage, leading to a better structural quality of the GaN layer. (C) 2007 Elsevier B.V. All rights reserved.

Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition

In this paper. we investigate the influences of the initial nitridation of sapphire substrates on the optical and structural characterizations in GaN films. Two GaN samples with and without 3 min nitridation process were investigated by photoluminescence (PL) spectroscopy in the temperature range of 12-300 K and double-crystal X-ray diffraction (XRD). In the 12 K PL spectra of the GaN sample without nitridation, four dominant peaks at 3.476, 3.409 3.362 and 3.308 eV were observed, which were assigned to donor bound exciton, excitons bound to stacking faults and extended structural defects. In the sample with nitridation, three peaks at 3.453, 3.365. and 3.308 eV were observed at 12 K, no peak related to stacking faults. XRD results at different reflections showed that there are more stacking faults in the samples without nitridation.

Statistical investigation on morphology development of gallium nitride in initial growth stage

Morphology of Gallium Nitride (GaN) in initial growth stage was observed with atomic force microscopy (AFM) and scanning electron microscopy (SEM), It was found that the epilayer developed from islands to coalesced film. Statistics based on AFM observation was carried out to investigate the morphology characteristics. It was found that the evolution of height distribution could be used to describe morphology development. Statistics also clearly revealed variation of top-face growth rate among islands. Indium-doping effect on morphology development was also statistically studied. The roughening and smoothing behavior in morphology development was explained. (C) 2002 Elsevier Science B.V. All rights reserved.

A geometrical model of GaN morphology in initial growth stage

Based on morphology observed by atomic force microscopy, a geometrical model was proposed in order to explain the statistical results obtained from morphology observation on GaN in initial growth stage. Four parameters were introduced to describe the morphology characteristics in this model. Least-square fitting of height distribution was performed. The height distribution derived from the model agreed well with that obtained from experimental records. It was also found that the model should be further advanced to understand the growth of GaN in initial growth stage. (C) 2002 Elsevier Science BY. All rights reserved.

Indium doping effect on GaN in the initial growth stage

Three minutes' growth was carried out to investigate the indium-doping effect on initially grown GaN. Indium-doped and undoped samples were grown by low-pressure metalorganic vapor phase epitaxy. Atomic force microscope observation revealed that In-doping modified the morphology of the nuclei. Indium-doping also enhanced wetting between the buffer and nuclei layers, which was also supported by optical transmission. Photoluminescence suggested that indium-doping obviously enhanced band-edge related emission even in the nucleation stage. X-ray diffraction performed on samples grown for 20 minutes indicated improvement of the crystalline quality through indium-doping. The mechanism of the indium-doping effect was discussed.

Ion bombardment as the initial stage of diamond film growth

It is believed that during the initial stage of diamond film growth by chemical-vapor deposition (CVD), ion bombardment is the main mechanism in the bias-enhanced-nucleation (BEN) process. To verify such a statement, experiments by using mass-separated ion-beam deposition were carried out, in which a pure carbon ion beam, with precisely defined low energy, was selected for investigating the ion-bombardment effect on a Si substrate. The results are similar to those of the BEN process, which supports the ion-bombardment-enhanced-nucleation mechanism. The formation of sp(3) bonding is based on the presumption that the time of stress generation is much shorter than the duration of the relaxation process. The ion-bombarded Si is expected to enhance the CVD diamond nucleation density because the film contains amorphous carbon embedded with nanocrystalline diamond and defective graphite. (C) 2001 American Institute of Physics.

Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition

We present some results on the effect of initial buffer layer on the crystalline quality of Cubic GaN epitaxial layers grown on GaAs(100) substrates by metalorganic chemical vapor deposition. Photoluminescence and Hall measurements were performed to characterize the electrical and optical properties of cubic GaN. The crystalline quality subsequently grown high-temperature (HT) cubic GaN layers strongly depended on thermal effects during the temperature ramping process after low temperature (LT) growth of the buffer layers. Atomic force microscope (AFM) and reflection high-energy electron diffraction (RHEED) were employed to investigate this temperature ramping process. Furthermore, the role of thermal treatment during the temperature ramping process was identified. Using the optimum buffer layer, the full width at half maxim (FWHM) at room temperature photoluminescence 5.6 nm was achieved. To our knowledge, this is the best FWHM value for cubic GaN to date. The background carrier concentration was as low as 3 x 10(13) cm(-3). (C) 2000 Published by Elsevier Science S.A. All rights reserved.

Investigation of the polyetherketone guest-host DR1/PEK-c polymer films by real-time monitoring of the second-harmonic generation

The real-time monitoring of the second-harmonic generation (SHG) was used to optimize the poling condition and to study the nonlinear optical (NLO) properties of the polyetherketone (PEK-c) guest-host polymer films. The high second-order NLO coefficient chi(33)((2)) = 11.02 pm/v measured at 1.064 mu m was achieved when the weight percent of DR1 guest in the polymer system is 20%. The NLO activity of the poled DR1/PEK-c polymer film can maintain more than 80% of its initial value when temperature is under 100 degrees C, and the normalized second-order NLO coefficient can maintain more than 85% after 2400 s at 80 degrees C. (C) 2000 Elsevier Science Ltd. All rights reserved.

Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition

We have investigated the growth of GaN buffers by metalorganic chemical vapor deposition (MOCVD) on GaAs (100) substrates. Atomic force microscope (AFM) and reflection high-energy electron diffraction (RHEED) were employed to study the dependence of the nucleation on the growth temperature, growth rate, annealing effect, and growth time. A two-step growth sequence must be used to optimize and control the nucleation and the subsequent growth independently. The size and distribution of islands and the thickness of buffer layers have a crucial role on the quality of GaN layers. Based on the experimental results, a model was given to interpret the formation of hexagonal-phase GaN in the cubic-phase GaN layers. Using an optimum buffer layer, the strong near-band emission of cubic GaN with full-width at half maximum (FWHM) value as small as 5.6 nm was observed at room temperature. The background carrier concentration was estimated to be in the range of 10(13) similar to 10(14) cm(-3).

The Deposition and Burning Characteristics During Slagging Co-Firing Coal and Wood: Modeling and Numerical Simulation

Numerical analysis was used to study the deposition and burning characteristics of combining co-combustion with slagging combustion technologies in this paper. The pyrolysis and burning kinetic models of different fuels were implanted into the WBSF-PCC2 (wall burning and slag flow in pulverized co-combustion) computation code, and then the slagging and co-combustion characteristicsespecially the wall burning mechanism of different solid fuels and their effects on the whole burning behavior in the cylindrical combustor at different mixing ratios under the condition of keeping the heat input samewere simulated numerically. The results showed that adding wood powder at 25% mass fraction can increase the temperature at the initial stage of combustion, which is helpful to utilize the front space of the combustor. Adding wood powder at a 25% mass fraction can increase the reaction rate at the initial combustion stage; also, the coal ignitability is improved, and the burnout efficiency is enhanced by about 5% of suspension and deposition particles, which is helpful for coal particles to burn entirely and for combustion devices to minimize their dimensions or sizes. The results also showed that adding wood powder at a proper ratio is helpful to keep the combustion stability, not only because of the enhancement for the burning characteristics, but also because the running slag layer structure can be changed more continuously, which is very important for avoiding the abnormal slag accumulation in the slagging combustor. The theoretic analysis in this paper proves that unification of co-combustion and slagging combustion technologies is feasible, though more comprehensive and rigorous research is needed.

Determination of appropriate condition on replacing methane from hydrate with carbon dioxide

This paper is intended to determine the appropriate conditions for replacing CH4 from NGH with CO2. By analyzing the hydration equilibrium graphs and geotherms, the HSZs of NGH and CO2 hydrate, both in permafrost and under deep sea, were determined. Based on the above analysis and experimental results, it is found that to replace CH4 from NGH with gaseous CO2, the appropriate experimental condition should be in the area surrounded by four curves: the geotherm, (H-V)(CO2), (L-V)(CO2) and (H-V)(CH4), and to replace CH4 from NGH with liquid CO2, the condition should be in the area surrounded by three curves: (L-V)(CO2), (H-L)(CO2) and (H-V)CH4. For conditions in other areas, either CO2 can not form a hydrate or CH4 can release little from its hydrate, which are not desirable results.

Study on methane hydration process in a semi-continuous stirred tank reactor

The methane hydration process is investigated in a semi-continuous stirred tank reactor. Liquid temperatures and reaction rates without stirrer are compared with those occurring with stirrer, while at the same time better stirring conditions of the methane hydration process are given by the experiments. Some basic data of fluid mechanics, for example, stirring Reynolds number, Froucle number and stirrer power, are calculated during the methane hydration process, which can be applied to evaluate stirrer capacity and provide some basic data for a scaled up reactor. Based on experiment and calculations in this work, some conclusions are drawn. First, the stirrer has great influence on the methane hydration process. Batch stirring is helpful to improve the mass transfer and heat transfer performances of the methane hydration process. Second, induction time can be shortened effectively by use of the stirrer. Third, in this paper, the appropriate stirring velocity and stirring time were 320 rpm and 30 min, respectively, at 5.0 MPa, for which the storage capacity and reaction time were 159.1 V/V and 370 min, respectively. Under the condition of the on-flow state, the initial stirring Reynolds number of the fluid and the stirring power were 12,150 and 0.54 W, respectively. Fourth, some suggestions, for example, the use of another type of stirrer or some baffles, are proposed to accelerate the methane hydration process. Comparing with literature data, higher storage capacity and hydration rate are achieved in this work. Moreover, some fluid mechanics parameters are calculated, which can provide some references to engineering application.