Synthesis and luminescence characteristics of LiMgAlF6:Ln(3+) (Ln = Ce, Eu, Tb)

By solid state reaction, LiMgAlF6 and LiMgAlF6:Ln(3+) are synthetized with the ratio 120/100/110 of LiF/MgF2/AlF3, at 1008 K, in high-purity Ar stream. Their crystal structure which belongs to hexagonal system are determined by X-Ray-Diffraction (XRD). Luminescence characteristics of Ce3+, Eu3+, Tb3+ and sensitization of Ce3+ to Tb3+ in LiMgAlF6 are studied. It is shown that the sensitization of Ce3+ to Tb3+ is efficient and a bright green emission is observed.

IMPROVEMENT OF SELECTIVITY WITH NUMERICAL DERIVATIVE TECHNIQUES IN INDUCTIVELY COUPLED PLASMA ATOMIC EMISSION-SPECTROMETRY

One of the most attractive features of derivative spectrometry is its higher resolving power. In the present power, numerical derivative techniques are evaluated from the viewpoint of increase in selectivity, the latter being expressed in terms of the interferent equivalent concentration (IEC). Typical spectral interferences are covered, including flat background, sloped background, simple curved background and various types of line overlap with different overlapping degrees, which were defined as the ratio of the net interfering signal at the analysis wavelength to the peak signal of the interfering line. the IECs in the derivative spectra are decreased by one to two order of magnitudes compared to those in the original spectra, and in the most cases, assume values below the conventional detection limits. The overlapping degree is the dominant factor that determines whether an analysis line can be resolved from an interfering line with the derivative techniques. Generally, the second derivative technique is effective only for line overlap with an overlapping degree of less than 0.8. The effects of other factors such as line shape, data smoothing, step size and the intensity ratio of analyte to interferent on the performance of the derivative techniques are also discussed. All results are illustrated with practical examples.

STUDY ON DEPOSITION POTENTIALS OF LITHIUM AND SODIUM-IONS AND DEPOLARIZATION IN BINARY CHLORIDE

Deposition potentials of Lithium and Sodium ions have been measured in binary chloride systems (LiCl-KCl, NaCl-KCl) by I-V curve method, to provide a theoretical base for preparing high purity Al-Li alloy by electrolysis in molten salt. The changes of free energy and enthalpy were calculated in terms of depolarization values on Al cathode. Thermodynamic meaning of depolarization was discussed in details and the empirical relation between binary alloy type and depolarization type was proposed. It is shown for the first time that the presence of a third element in Al-Li alloy can strengthen depolarization of Li ion at Al alloy cathode and give foundation for preparing high purity Al-Li-M ternary alloy. The effect of LiCl concentration on deposition potentials of Li ion at Al cathode in KCl-LiCl melt was studied and average active coefficient of LiCl was obtained.

The preparation and bioactivity research of agaro-oligosaccharides

Agaro-oligosaccharides were hydrolytically obtained from agar using hydrochloric acid, citric acid, and cationic exchange resin (solid acid). The FT-IR and NMR data showed that the hydrolysate has the structure of agaro-oligomers. Orthogonal matrix method was applied to optimize the preparation conditions based on alpha-naphthylamine end-labeled HPLC analysis method. The optimal way for oligosaccharides with different degree of polymerization (DP) was achieved by using solid acid degradation, which could give high yield and avoid solution neutralization process. Agaro-oligosaccharides with high purity were consequently obtained by activated carbon column isolation. Furthermore, the antioxidant and alpha-glucosidase inhibitory activity of three fractions were also investigated. The result indicated that 8% ethanol-eluted fraction showed highest activity against alpha-glucosidase with IC50 of 8.84 mg/mL, while 25% ethanol-eluted fraction possessed excellent antioxidant ability.

Isolation of the main light-harvesting chlorophyll a/b-protein complex from thylakoid membranes of marine alga, Bryopsis corticulans by a direct method

The main chlorophyll a/b light-harvesting complex (LHC 11) has been isolated directly from thylakoid membranes of marine green alga (Bryopsis corticulans Setch.) by two consecutive runs of anion exchange and gel-filtration chromatography. LHC 11 proteins in the membrane extracts treated with 3% n-Octyl-b-D-glucopyranoside (OG) obtained specific binding ability on Q Sepharose column, and thus were isolated from the thylakoid membranes in a highly selective fraction. The monomeric, trimeric and oligomeric subcomplexes of LHC 11 have been obtained by fractionation of the LHC 11 mixes with sucrose density gradient ultracentrifugation. The SDS-PAGE analysis of peptide composition and absorption spectrum showed that LHC 11 monomers, trimers and oligomers prepared through this work were intact and in high purity. Our report is the first to show that it is possible to purify LHC If directly from thylakoid membranes without extensively biochemical purification.

Graphitic nanofilaments as novel support of Ru-Ba catalysts for ammonia synthesis

A novel graphitic-nanofilament-(GNF-) supported Ru-Ba catalyst is prepared and used in ammonia synthesis reaction. The Ru-Ba/GNFs catalyst shows remarkably high activity and stability for ammonia synthesis, which can be attributed to high purity and graphitization of GNFs with unique structure. TEM micrographs of the Ru-Ba/GNFs catalysts show that Ru metal particles uniformly disperse on the outer wall of GNFs, and the particles become bigger than that before ammonia synthesis reaction after 50 h of operation at 500degreesC and 7.0 MPa, probably due to the Ru crystals covered by promoter and support materials and/or sintering of Ru crystals. (C) 2002 Elsevier Science (USA).

1.55 mu m Ge islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror

A 1.55 mum Ge islands resonant-cavity-enhanced (RCE) detector with high-reflectivity bottom mirror was fabricated by a simple method. The bottom mirror was deposited in the hole formed by anisotropically etching in a basic solution from the back side of the sample with the buried SiO2 layer in silicon-on-insulator substrate as the etch-stop layer. Reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2-1.65 mum. The peak responsivity of the RCE detector at 1543.8 nm is 0.028 mA/W and a full width at half maximum of 5 nm is obtained. Compared with the conventional p-i-n photodetector, the responsivity of RCE detector has a nearly threefold enhancement. (C) 2004 American Institute of Physics.

Comparison between double crystals X-ray diffraction micro-Raman measurement on composition determination of high Ge content Si1_xGex layer epitaxied on Si substrate

It is important to acquire the composition of Si1-xGex layer, especially that with high Ge content, epitaxied on Si substrate. Two nondestructive examination methods, double crystals X-ray diffraction (DCXRD) and micro-Raman measurement, were introduced comparatively to determine x value in Si1-xGex: layer, which show that while the two methods are consistent with each other when x is low, the results obtained from double crystals X-ray diffraction are not credible due to the large strain relaxation occurring in Si1-xGex layers when Ge content is higher than about 20%. Micro-Raman measurement is more appropriate for determining high Ge content than DCXRD.

Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors

Current-based microscopic defect analysis method such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current have been developed over the years at Brookhaven National Laboratory (BNL) for the defect characterizations on heavily irradiated (Phi(n) >= 10(13) n/cm(2)) high-resistivity (>= 2 k Omega cm) Si sensors/detectors. The conventional DLTS method using a capacitance transient is not valid on heavily irradiated high-resistivity Si sensors/detectors. A new optical filling method, using lasers with various wavelengths, has been applied, which is more efficient and suitable than the traditional voltage-pulse filling. Optimum defect-filling schemes and conditions have been suggested for heavily irradiated high-resistivity Si sensors/detectors. (c) 2006 Published by Elsevier Ltd.

Comparative study of the structural properties of nanocrystalline Ge : H plasma deposited onto the cathode and the anode using high hydrogen dilutions

Nanocrystalline Ge:H thin films were deposited simultaneously on both electrodes of a conventional capacitively coupled reactor for plasma enhanced chemical vapor deposition using highly H-2 diluted GeH4 as the source gas. The structure of the films was investigated by Raman scattering and X-ray diffraction as a function of substrate temperature, H-2 dilution, and r.f. power. The hydrogen concentrations and bonding configurations were determined by infrared absorption spectroscopy. For anodic deposition, the preferred crystallographic orientation and film crystallinity depend rather strongly on the deposition parameters. This dependence can be explained by changing surface mobilities of adsorbed precursors due to changes in the hydrogen coverage of the growing surface. Cathodic deposition is much less sensitive to variations in the deposition parameters. It generally results in films of high crystallinity with randomly oriented crystallizes. Some possible mechanisms for these differences between anodic and cathodic deposition are discussed. (C) 1999 Elsevier Science S.A. All rights reserved.

Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors

Current-based microscopic defect analysis method such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current have been developed over the years at Brookhaven National Laboratory (BNL) for the defect characterizations on heavily irradiated (Phi(n) >= 10(13) n/cm(2)) high-resistivity (>= 2 k Omega cm) Si sensors/detectors. The conventional DLTS method using a capacitance transient is not valid on heavily irradiated high-resistivity Si sensors/detectors. A new optical filling method, using lasers with various wavelengths, has been applied, which is more efficient and suitable than the traditional voltage-pulse filling. Optimum defect-filling schemes and conditions have been suggested for heavily irradiated high-resistivity Si sensors/detectors. (c) 2006 Published by Elsevier Ltd.

High resistance AlGaAs/GaAs quantum cascade detectors grown by solid source molecular beam epitaxy operating above liquid nitrogen temperature

This work was supported by the National Research Projects of China (grant numbers are 60525406, 60736031, 60806018, 60906026, 2006CB604903, 2007AA03Z446 and 2009AA03Z403, 10990100, respectively). The authors would like to thank P Liang, Y Hu, H Sun, X L Zhang, B J Sun, H L Zhen and N Li for their help in processing and characterization.

Array for 980nm Vertical Cavity Surface Emitting Diodes and Detectors

Both the vertical cavity surface emitting diodes and detectors are fabricated by using the epitaxial wafer with resonant cavity structure. Their characteristics are analyzed. The light emitters have high spectral purity of 4.8nm and high electroluminescence intensity of 0.7mW while injection current is 50mA. A 1*16 array of surface emitting light device is tested on line by probes and then used for module. The light detectors have wavelength selectivity and space selectivity. The required difference in input mirror reflectivity between emitters and detectors can easily be achieved though varying the numbers of top DBR period by etching.