提高能量密度的超衍射极限激光光束相位补偿技术

定义了激光光束衍射远场光斑压缩前后的能量比以及能量密度比来衡量超衍射极限激光光束的质量。通过利用反向传递算法设计了合适的补偿相位板，不但对准直放大的单一横模激光光束进行小于光学衍射极限的发散度的压缩，同时又保证光束能量集中于压缩后的远场衍射主瓣中，使压缩后的远场衍射光斑的能量密度增加。给出了相应的实例。这一结论不但解决了光学超分辨中光束压缩与能量损失不可避免这一矛盾，而且为发散度小且能量密度高的超衍射极限激光光束的实验工作以及该类光束的实际应用提供了理论基础。

单块晶体集成的N×N纵横开关网络及其控制算法

设计了一种单块晶体集成的n×n纵横开关(Crossbar)网络。通过综合考虑晶体的双折射和全内双反射现象,以及晶体的电光效应,将构成n×n纵横开关网络的所有单元器件都集成到一块具有电光效应的双折射晶体上。同时,给出了该网络的控制算法,通过对开关工作状态的控制,可以实现任意输入输出通道之间的无阻塞连接。这种单块晶体集成的纵横开关网络具有能量损耗低、无阻塞、易安装、抗干扰等优点,适合于全光网络发展的需要。

Defect analysis in Czochralski-grown Yb : FAP crystal

Growth-induced defects in Yb:FAP crystals grown by the Czochralski method have been investigated by optical microscopy, chemical etching, scanning electron microscopy (SEM) and energy-dispersive spectroscopy (EDS). Anisotropic etching features have been observed on two FAP crystal planes: (0001) and (1010). The shape of etch pits on the (0001) plane is hexagonal, while the etch pits on the (1010) plane have a variety of irregular shapes. It is also found that the density of etch pit varies along the boule. Based on the experimental observations, the formation mechanisnis of growth defects are discussed, and methods for reducing the growth-induced defect concentration is proposed. (c) 2005 Elsevier B.V. All rights reserved.

Yb：Ca5（PO4）3F激光晶体的生长缺陷

采用提拉法生长了质量优异的Yb：Ca5（PO4）2F（Yb：FAP）晶体。运用化学腐蚀，光学显微镜、扫描电子显微镜以及能量散射光谱仪观察了该晶体中的生长条纹和包裹物等宏观缺陷，以及晶体的位错腐蚀形貌、位错密度及其分布情况，同时观察了晶体中亚晶界的形态。由晶体中位错的径向变化以及生长条纹可知：晶体在生长过程中为微凸界面生长。高温下CaF2的挥发造成了在晶体生长后期熔体中组分偏离化学计量比，出现组分过冷，形成包裹物。且位错密度显著增加。Yb：FAP晶体的各向异性使得晶体在（10 10）面的位错蚀坑形状、大小以

Metrical dental analysis on golden monkey (Rhinopithecus roxellana)

Dental variation in the Chinese golden monkey (Rhinopithecus roxellana) is here evaluated by univariate, bivariate, and multivariate analyses. Allometric analyses indicate that canines and P3s are positively, but other dimensions negatively scaled to mandible and maxilla, and to body size. With the exception of the mesiodistal dimensions of I-1 and M-3, and the buccolingual dimension of Pq, mandibular dental variables show similar scaling relative to body size. Analysis of residuals shows that males have significantly larger canine, P-3 and buccolingual dimensions of the postcanine teeth (M-2 and M-3) than females. A significant difference in shape between the sexes is found in the buccolingual dimension of the upper teeth, but not in the mandible. Unlike the situation in some other species, Female golden monkeys do nor exhibit relatively larger postcanine teeth than males, in fact, the reverse is true, especially for M(2)s and M(3)s. The fact that most of the dental variables show low negative allometry to body size might be related a cold environment that has led to the development of larger body size with I-educed energy loss. When the raw data are examined by Discriminant Function Analysis the sexes are clearly distinguishable.

Growth and feed utilization in two strains of gibel carp, Carassius auratus gibelio: paternal effects in a gynogenetic fish

Gibel carp (Carassius auratus gibelio Bloch) is a natural gynogenetic fish which requires sperm of the same or related species to activate egg development. The eggs of one gibel carp were divided into two batches. One batch was 'fertilized' with sperm from gibel carp (strain DD), and the other 'fertilized' with sperm from red common carp (Cyprinus carpio red variety) (strain DR). The juveniles were transferred to the laboratory 36 days post-hatch. Triplicate groups of each strain were fed a formulated diet at either 3% or satiation ration for 8 weeks. At both the restricted and satiation rations, specific growth rate was significantly higher in strain DR than in strain DD. At the 3% ration, there was no significant difference in feeding rate or feed conversion efficiency between the two strains. At the satiation ration, strain DR had a significantly lower feeding rate but higher feed conversion efficiency than strain DD. At the satiation ration, strain DR had a significantly lower intake protein, but higher recovered protein than strain DD. There was no significant difference in faecal protein loss between the two strains. At the 3% ration, strain had no significant effects on intake protein, faecal protein or recovered protein. Neither faecal energy loss nor recovered energy was affected by strain or ration. At both the 3% and satiation ration, final body contents of dry matter and lipid were significantly lower in strain DR than strain DD, while there was no significant difference in protein and energy content between the two strains at either ration level. The results suggested that gibel carp 'fertilized' with sperm of common carp grew faster than those 'fertilized' with sperm of gibel carp through increased feed conversion efficiency and protein retention.

Growth and feed utilization by F-4 human growth hormone transgenic carp fed diets with different protein levels

The F-4 generation of human growth hormone (hGH) transgenic red common carp Cyprinus carpio had significantly higher growth rates than the non-transgenic controls. Protein and energy intakes were significantly higher in the transgenic carp than in the controls fed the 20% protein diet, but were not different between the two strains fed diets with 30 and 40% protein. Faecal protein loss, as a proportion of protein intake, was significantly lower in the transgenics than in the controls fed diets with 20 and 30% protein, but was not different between the two strains Fed diet with 40% protein. Faecal energy loss, as a proportion of energy intake, was significantly lower in the transgenics than in the controls fed diet with 20% protein, but was not different between the two strains fed diets with 30 and 40% protein. Recovered protein, as a proportion of protein intake, was significantly higher in the transgenics than in the controls fed all diets, whereas recovered energy was significantly higher in the transgenic fish fed the 40% protein diet. For fish fed each diet, the transgenics had significantly higher body contents of dry matter and protein, but lower contents of lipid than the controls. It was concluded that transgenics were more efficient in utilizing dietary protein than the controls. it a lower dietary protein level; transgenics achieved higher growth rates mainly by increasing feed intake; at higher levels of dietary protein, transgenics achieved higher growth rates mainly through a higher energy conversion efficiency. (C) 1998 The Fisheries Society of the British Isles.

Optical properties of UO2 and PuO2

We perform first-principles calculations of electronic structure and optical properties for UO2 and PuO2 based on the density functional theory using the generalized gradient approximation (GGA) + U scheme. The main features in orbital-resolved partial density of states for occupied f and p orbitals, unoccupied d orbitals, and related gaps are well reproduced compared to experimental observations. Based on the satisfactory ground-state electronic structure calculations, the dynamical dielectric function and related optical spectra, i.e., the reflectivity, adsorption coefficient, energy-loss, and refractive index spectrum, are obtained. These results are consistent with the available experiments.

Crack-free InAlGaN quaternary alloy films grown on Si(111) substrate by metalorganic chemical vapor deposition

Crack-free In0.08Al0.25Ga0.67N quaternary films, with and without thick (> 1.5 mum) high-temperature-GaN (HTGaN) interlayer, have been grown on Si(1 1 1) substrates by a low-pressure metalorganic chemical vapor deposition (MOCVD) system. Mole fractions of In and Al in quaternary alloy layers are determined by Energy dispersive spectroscopy (EDS) and Rutherford backscattering spectrometry (RBS), which are recorded as similar to8% and similar to25-27%, respectively. High-resolution X-ray diffraction (HRXRD) and room temperature photoluminescence (RT-PL) results evidence the film's single crystal structure and the existence of local In- and/or Al-rich regions. Compared with GaN film grwon on Si(1 1 1) substrate, no crack is observed in the quaternary ones. Two explanations are proposed. First, mismatch-induced strain is relaxed significantly due to gradual changes of In concentration. Second, the weak In-N bond is likely to break when the sample is cooled down to the room temperature, which is expected to favor the releasing of thermal stress. (C) 2004 Elsevier B.V. All rights reserved.

Influence of longitudinal electric field on the hot-phonon effect in quantum wells

Using the Huang-Zhu model [K. Huang and B.-F. Zhu, Phys. Rev. B 38, 13377 (1988)] for the optical phonons and associated carrier-phonon interactions in semiconductor superlattices, the effects of longitudinal electric field on the energy-loss rates (ELRs) of hot carriers as well as on the hot-phonon effect (HPE) in GaAs/AlAs quantum wells (QWs) are studied systematically. Contributions of various bulklike and interface phonons to the hot-carrier relaxation are compared in detail, and comprehensively analyzed in relation to the intrasubband and intersubband scatterings for quantum cascade lasers. Due to the broken parity of the electron (hole) states in the electric field, the bulklike modes with antisymmetric potentials are allowed in the intrasubband relaxation processes, as well as the modes with symmetric potentials. As the interface phonon scattering is strong only in narrow wells, in which the electric field affects the electron (hole) states little, the ELRs of hot carriers through the interface phonon scattering are not sensitive to the electric field. The HPE on the hot-carrier relaxation process in the medium and wide wells is reduced by the electric field. The influence of the electric field on the hot-phonon effect in quantum cascade lasers is negligible. When the HPE is ignored, the ELRs of hot electrons in wide QWs are decreased noticeably by the electric field, but slightly increased by the field when considering the HPE. In contrast with the electrons, the ELRs of hot holes in wide wells are increased by the field, irrespective of the HPE. (c) 2006 American Institute of Physics.

Green-light-emitting ZnSe nanowires fabricated via vapor phase growth

Stoichiometric ZnSe nanowires have been synthesized through a vapor phase reaction of zinc and selenium powder on the (100) silicon substrate coated with a gold film of 2 nm in thickness. The microstructures and the chemical compositions of the as-grown nanowires have been investigated by means of electron microscopy, the energy dispersive spectroscopy, and Raman spectroscopy. The results reveal that the as-grown materials consist of ZnSe nanowires with diameters ranging from 5 to 50 nm. Photoluminescence of the sample demonstrates a strong green emission from room temperature down to 10 K. This is attributed to the recombination of electrons from conduction band to the medium deep Au acceptors. (C) 2003 American Institute of Physics.

Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures

Confirmation of quantum dot lasing have been given by photoluminescence and electro-luminescence spectra. Energy levels of QD laser are distinctively resolved due to band filling effect, and the lasing energy of quantum dot laser is much lower than quantum well laser. The energy barrier at InAs/GaAs interface due to the built-in strain in self-organized system has been determined experimentally by deep level transient spectroscopy (DLTS). Such barrier has been predicted by previous theories and can be explained by the apexes appeared in the interface between InAs and GaAs caused by strain.

Determination of the interdiffusion coefficients of liquid Zn and Sn using Ta/Zn-Sn/Si trilayers

In this paper we present a new method for measuring diffusion coefficients in liquid metals under convection-less conditions with solid/liquid-liquid/solid trilayer. The advantage of this kind of trilayer is that effects from gravity-induced convection and Marangoni-convection can be omitted, so that the diffusion coefficient is determined more accurately. The Ta/Zn-Sn/Si trilayer were prepared with a multi-target ion-beam sputtering deposition technique and annealed in an electric furnace under an argon atmosphere. The interdiffusion of liquid zinc and tin at 500 degrees degree C was investigated. The diffusion concentration profiles were determined by energy dispersive spectroscopy. The interdiffusion coefficients range from 1.0x10(-6)cm(2)/s to 2.8x10(-6)cm(2)/s, which is less than previous values measured by capillary reservoir technique under 1g-environment where various convection exist. The precise interdiffusion coefficients of liquid zinc and tin result from the removing of disturbances of various kinds of convection.

Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots

The energy barrier at InAs/GaAs interface due to the built-in strain in self-organized system has been determined experimentally. Such a barrier has been predicted by previous theories. From the deep-level transient spectroscopy (DLTS) measurements, we have obtained the electron and hole energy levels of quantum dots E-e(QD-->GaAs) = 0.13 eV and E-h(QD-->GaAs) = 0.09 eV relative to the bulk unstrained GaAs band edges E-c and E-v. DLTS measurements have also provided evidence to the existence of the capture barriers of quantum dots for electron E-eB = 0.30 eV and hole E-hB = 0.26 eV. The barriers can be explained by the apexes appearing in the interface between InAs and GaAs caused by strain. Combining the photoluminescence results, the band structures of InAs and GaAs have been determined.

Comparison of cooling rates for hot carriers in GaAs AlAs quantum wells based on macroscopic and microscopic phonon models

By using three analytical phonon models in quantum wells-the slab model, the guided-mode model, and the improved version of the Huang-Zhu model [Phys. Rev. B 38, 13 377 (1998)], -and the phonon modes in bulk, the energy-loss rates of hot carriers due to the Frohlich potential scattering in GaAs/AlAs multiple quantum wells (MQW's) are calculated and compared to those obtained based on a microscopic dipole superlattice model. In the study, a special emphasis is put on the effects of the phonon models on the hot-carrier relaxation process when taking the hot-phonon effect into account. Our numerical results show that, the calculated energy-loss rates based on the slab model and on the improved Huang-Zhu model are almost the same when ignoring the hot-phonon effect; however, with the hot phonon effect considered, the calculated cooling rate as well as the hot phonon occupation number do depend upon the phonon models to be adopted. Out of the four analytical phonon models investigated, the improved Huang-Zhu model gives the results most close to the microscopic calculation, while the guided-mode model presents the poorest results. For hot electrons with a sheet density around 10(12)/cm(2), the slab model has been found to overestimate the hot-phonon effect by more than 40% compared to the Huang-Zhu model, and about 75% compared to the microscopic calculation in which the phonon dispersion is fully included. Our calculation also indicates that Nash's improved version [J. Lumin. 44, 315 (1989)] is necessary for evaluating the energy-loss rates in quantum wells of wider well width, because Huang-Zhu's original analytical formulas an only approximately orthogonal for optical phonons associated with small in-plane wave numbers. [S0163-1829(99)08919-5].