Green-light-emitting ZnSe nanowires fabricated via vapor phase growth


Autoria(s): Xiang B; Zhang HZ; Li GH; Yang FH; Su FH; Wang RM; Xu J; Lu GW; Sun XC; Zhao Q; Yu DP
Data(s)

2003

Resumo

Stoichiometric ZnSe nanowires have been synthesized through a vapor phase reaction of zinc and selenium powder on the (100) silicon substrate coated with a gold film of 2 nm in thickness. The microstructures and the chemical compositions of the as-grown nanowires have been investigated by means of electron microscopy, the energy dispersive spectroscopy, and Raman spectroscopy. The results reveal that the as-grown materials consist of ZnSe nanowires with diameters ranging from 5 to 50 nm. Photoluminescence of the sample demonstrates a strong green emission from room temperature down to 10 K. This is attributed to the recombination of electrons from conduction band to the medium deep Au acceptors. (C) 2003 American Institute of Physics.

Identificador

http://ir.semi.ac.cn/handle/172111/11586

http://www.irgrid.ac.cn/handle/1471x/64763

Idioma(s)

英语

Fonte

Xiang B; Zhang HZ; Li GH; Yang FH; Su FH; Wang RM; Xu J; Lu GW; Sun XC; Zhao Q; Yu DP .Green-light-emitting ZnSe nanowires fabricated via vapor phase growth ,APPLIED PHYSICS LETTERS,2003 ,82 (19):3330-3332

Palavras-Chave #半导体物理 #PHYSICAL EVAPORATION #QUANTUM WIRES #DOTS #DEPOSITION
Tipo

期刊论文