Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111)

We report the growth of high quality and crack-free GaN film on Si (111) substrate using Al0.2Ga0.8N/AlN stacked interlayers. Compared with the previously used single AlN interlayer, the AlGaN/AlN stacked interlayers can more effectively reduce the tensile stress inside the GaN layer. The cross-sectional TEM image reveals the bending and annihilation of threading dislocations (TDs) in the overgrown GaN film which leads to a decrease of TD density.

Geometric phase of a bipartite system with Dzyaloshinski-Moriya interaction

The Berry phase of a bipartite system described by a Heisenberg XXZ model driven by a one-site magnetic field is investigated. The effect of the Dzyaloshinski-Moriya (DM) anisotropic interaction on the Berry phase is discussed. It is found that the DM interaction affects the Berry phase monotonously. and can also cause sudden change of the Berry phase for some weak magnetic field cases. (c) 2008 Elsevier B.V. All rights reserved.

Optimal teleportation via thermal entangled states of a two-qubit Heisenberg chain

We study the optimal teleportation based on Bell measurements via the thermal states of a two-qubit Heisenberg XXX chain in the presence of the Dzyaloshinsky-Moriya (DM) anisotropic antisymmetric interaction and obtain an optimal unitary transformation. The explicit expressions of the output state and the teleportation fidelity are presented and compared with those of the standard protocol. It is shown that in this protocol the teleportation fidelity is always larger and the unit fidelity is achieved at zero temperature. The DM interaction can enhance the teleportation fidelity at finite temperatures, as opposed to the effect of the interaction in the standard protocol. Cases with other types of anisotropies are also discussed. Copyright (C) EPLA, 2009

Electron spin quantum beats and room temperature g factor in GaAsN

We report on the investigation of electron spin quantum beats at room temperature in GaAsN thin films by time-resolved Kerr rotation technique. The measurement of the quantum beats, which originate from the Larmor precession of electron spins in external transverse magnetic field, yields an accurate determination of the conduction electron g factor. We show that the g factor of GaAs1-xNx thin films is significantly changed by the introduction of a small nitrogen fraction.

Quantum critical phenomena in the XY spin chain with the Dzyaloshinski-Moriya interaction (Retracted article. See vol 80, artn 019903, 2009)

We study the effects of the Dzyaloshinski-Moriya (DM) anisotropic interaction on the ground-state properties of the Heisenberg XY spin chain by means of the fidelity susceptibility, order parameter, and entanglement entropy. Our results show that the DM interaction could influence the distribution of the regions of quantum phase transitions and cause different critical regions in the XY spin model. Meanwhile, the DM interaction has effective influence on the degree of entanglement of the system and could be used to increase the entanglement of the spin system.

Surface characterization study on SnO2 powder modified by thiourea

The SnO2 material prepared by sol-gel method was modified by thiourea solution in different concentrations (0.05, 0.1 and 0.2 mol dm(-3)). Then the structure and the average grain size of the SnO2 material were investigated by X-ray power diffraction. In order to understand the nature of the species on the SnO2 surfaces, the thermal gravimetric and differential thermal analyzer (TG-DTA) and IR spectra of these modified and unmodified sample were taken. The result indicates that the stability of oxygen adsorbed on thiourea-modified surface was improved and the amount of surface hydroxyl groups adsorbed on this grain surface was decreased. The thiourea adsorbed on SnO2 grain surface is translated to SO42- after sintered at 600 degrees C. SO42- species stabilize the resistance of the SnO2 sensor. (c) 2005 Elsevier B.V. All rights reserved.

Interplay between the Dzyaloshinskii-Moriya anisotropic antisymmetric interaction and the SWAP operation in a two-qubit Heisenberg model

The SWAP operation in a two-qubit Heisenberg model in the presence of Dzyaloshinskii-Moriya (DM) anisotropic antisymmetric interaction is investigated. 1t is shown that the SWAP operation can be implemented for some kinds of DM coupling and the influence of DM couplings is divided into different cases. The conditions of the DM coupling under which the SWAP operation is feasible are established. (C) 2007 Elsevier B.V. All rights reserved.

A study on the minority carrier diffusion length in n-type GaN films

The minority carrier diffusion length of n-type GaN films grown by metalorganic chemical vapor deposition (MOCVD) has been studied by measuring the surface photovoltaic (PV) spectra. It was found that the minority carrier diffusion length of undoped n-type GaN is considerably larger than that in lightly Si-doped GaN. However, the data suggested that the dislocation and electron concentration appear not to be responsible for the minority carrier diffusion length. It is suggested that Si doping plays an important role in decreasing the minority carrier diffusion length.

An adaptive controller for a class of nonlinear system using direction basis function

For a class of nonlinear dynamical systems, the adaptive controllers are investigated using direction basis function (DBF) in this paper. Based on the criterion of Lyapunov' stability, DBF is designed which guarantees that the output of the controlled system asymptotically tracks the reference signals. Finally, the simulation shows the good tracking effectiveness of the adaptive controller.

静态实时中间件的优先级映射问题

使用截止期单调(DM)调度算法和分布式优先级冲顶资源访问控制协议(DPCP)的实时CORBA系统中,当节点的本地优先级个数不足时,必须将多个全局优先级映射成一个本地优先级.这需要:①判定映射后任务可调度性的充分必要条件;②减少时间复杂度的映射算法.为此,推导出判定条件,确定了DGPM映射算法.该算法在保证系统可调度的前提下分配任务,或者证明映射后系统不可调度.证明了DGPM算法能调度其他直序列优先级映射算法可调度的任务和GCS集合.判定条件和算法在实际项目中得到了应用.

一种静态最少优先级分配算法

随着实时系统越来越多地应用于各种快速更新系统,尤其是各种片上系统,如PDA(personal digital assistant),PSP(play station portable)等,性价比已成为系统设计者的主要关注点.实际应用中,实时系统通常仅支持较少的优先级,常出现系统优先级数小于任务数的情况(称为有限优先级),此时,需将多个任务分配到同一系统优先级,RM(rate monotonic),DM(deadline monotonic)等静态优先级分配算法不再适用.为此,静态有限优先级分配是研究在任务集合静态优先级可调度的情况下,可否以及如何用较少或最少的系统优先级保持任务集合可调度.已有静态有限优先级分配可分为两类:固定数目优先级分配和最少优先级分配.给出了任意截止期模型下任务静态有限优先级可调度的充要条件以及不同静态有限优先级分配间转换时的几个重要性质,指出了系统优先级从低到高分配策略的优越性,定义了饱和任务组与饱和分配的概念,证明了在任务集合静态优先级可调度的情况下,最少优先级分配比固定数目优先级分配更具一般性.最后提出一种最少优先级分配算法LNPA(least-number priority assignment).与现有算法相比,LNPA适用范围更广,且复杂度较低.

Nano-Ag on vanadium dioxide. I. Localized spectrum tailoring

We report on the utilization of localized surface plasmon resonance (LSPR) of Ag nanoparticles to tailor the optical properties Of VO2 thin film. Interaction of nano-Ag with incident light yields a salient absorption band in the visible-near IR region and modifies the spectrum Of VO2 locally. The wavelength of modification occurs in a limited spectral region rather than affects the full spectrum. The wavelength of modification shows a strong dependence on the metal nanoparticle size and shifts toward the red as the particle size or the mass thickness of nano-Ag increases. Also, we found that the wavelength can be shifted into the IR further by introducing a thin layer of TiO2 onto the nano-Ag. Interestingly, with the help of LSPR effects the VO2 film exhibits an anomalous thermochromic behavior in the modification wavelength region, which may be useful in optical switching applications.

Electron injection assisted phase transition in a nano-Au-VO2 junction

The semiconductor-metal transition of vanadium dioxide (VO2) thin films epitaxially grown on C-plane sapphire is studied by depositing Au nanoparticles onto the thermochromic films forming a metal-semiconductor contact, namely, a nano-Au-VO2 junction. It reveals that Au nanoparticles have a marked effect on the reduction in the phase transition temperature of VO2. A process of electron injection in which electrons flow from Au to VO2 due to the lower work function of the metal is believed to be the mechanism. The result may support the Mott-Hubbard phase transition model for VO2.

液/液界面电化学新体系和新技术的研究

L/L界面电化学是本世纪七十年代中期发展起来的一门电学学科的新的研究领域。L/L界面上的电化学现象的研究与其它学科领域密切相关，因而越来越引起人们的重视。本论文综述了L/L界面电化学的基本理论和发展概况，然后，在此基础上，对L/L界面电化学研究的新方法，新的溶剂体系，新的转移体系等三个方面进行了系统的研究，主要结果概括如下：一、在新方法研究方面，对广泛使用的四电极L/L界面固定的电解池进行了硅烷化局部改进，解决了操作上的困难，改善了界面的不均匀性，提高了测量准确度和精密度；随后，我们又设计了三种新型悬液电解池，用于本论文的研究和分析工作。这些电解池具有构造简单，体积小，易于制做，界面可调可变，操作便捷，及易改成滴液电极和离子选择性电极等特点，这些电解池与微分脉冲伏安法和方波伏安法联用，提高了分析灵敏度，检限可达10~(-6)mot.dm~(-3)。二、在新溶剂体系的研究中，首次发现了7K/弃硫氰酸丙烯的界面，具有与水/硝基苯界面相比美的界面性能。基础电解质的电位相同。对几种典型离子的研究表明，异硫氰酸为烯可以代替硝基苯用了L/L界面研究。此外，我们采用将不同极性的溶剂相混合的方法，发现了一系列电位较宽，可以用于L/L界面研究的混合溶剂体系，结果表明，对离子转移的Δ_2~W 的主要影响不是溶剂的介电常数，而是溶剂的化学性质。三、在转移体系研究方面，发现了几十种能在L/L界面转移的新的药物体系，为进一步研究和发现更多的新体系在结构上探明了方向。在此基础上，我们采用循环伏安法，循环线性电流扫描计时电位法和微分脉冲伏安法系统地研究了五种胆碱药物离子在L/L界面的转移行为，提出了转移过程的机制为简单离子转移机制。并计算了转移参数；随后，分析了药物结构与转移行为的关系，发现聚脂结构的增加，使药物离子转移的Δ_2~W 和Δ_2~W 迁移；讨论了药物的水解反应对转移过程的影响，研究表明伴有水解反应的拟胆碱药物离子的转移过程为一律有前行化学反应的不可逆离子转移过程。同时，我们还探讨了微分伏安法和方波伏安法用于药物分析的可行性。此外，我们采用循环伏安法研究了麦迪霉素推动质子在L/L界面转移的过程，并以此为依据，建立了L/L界面电分析法检测麦迪霉素的新方法。