112 resultados para DENTAL ALLOYS


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Although metalorganic vapor phase epitaxy (MOVPE) is generally regarded as a non-equillibrium process, it can be assumed that a chemical equilibrium is established at the vapor-solid interface in the diffusion limited region of growth rate. In this paper, an equilibrium model was proposed to calculate the relation between vapor and solid compositions for II-VI ternary alloys. Metastable alloys in the miscibility gap may not be obtained when the growth temperature is lower than the critical temperature of the system. The influence of growth temperature, reactor pressure, input VI/II ratio, and input composition of group VI reactants has been calculated for ZnSSe, ZnSeTe and ZnSTe. The results are compared with experimental data for the ZnSSe and ZnSTe systems.

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The electronic properties of wide-energy gap zinc-blende structure GaN, A1N, and their alloys Ga(1-x)A1(x)N are investigated using the empirical pseudopotential method. Electron and hole effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at Gamma and those of the conduction band at Gamma and X are obtained for GaN and AIN, respectively. The energies of Gamma, X, L conduction valleys of Ga(1-x)A1(x)N alloy versus Al fraction x are also calculated. The information will be useful for the design of lattice mismatched heterostructure optoelectronic devices based on these materials in the blue light range application. (C) 1995 American Institute of Physics.

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The electronic properties of wide energy gap zinc-blende structure GaN, AlN and their alloys Ga1-xAlxN are investigated using the empirical pseudopotential method. Electron and hole Effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at Gamma and those of the conduction band at Gamma and X are obtained. The energies of Gamma, X, L conduction valleys of Ga1-xAlxN alloy versus Al fraction x are also calculated. The information will be useful for the design of lattice mismatched heterostructure optoelectronic devices in the blue light range.

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Carrier recombination dynamics in AlInGaN alloy has been studied by photoluminescence (PL) and time-resolved photoluminescence (TRPL). The fast redshift of PL peak energy is observed and well fitted by a physical model considering the thermal activation and transfer processes. This result provides evidence for the exciton localization in the quantum dot (QD)-like potentials in our AlInGaN alloy. The TRPL signals are found to be described by a stretched exponential function of exp[(-t/tau)(beta)], indicating the presence of a significant disorder in the material. The disorder is attributed to a randomly distributed quantum dots or clusters caused by indium fluctuations. By studying the dependence of the dispersive exponent 8 on the temperature and emission energy, we suggest that the exciton hopping dominate the diffusion of carriers localized in the disordered quantum dots. Furthermore, the localized states are found to have OD density of states up to 250 K, since the radiative lifetime remains almost unchanged with increasing temperature.

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\Si1-yCy alloys with carbon composition of 0.5 at.% were successfully grown on n-Si(100) substrate by solid phase epitaxy recraystallization. The result was presented in this paper. With the help of the SiO2 capping layer, rather uniform carbon profile in amorphous Si layer was obtained by dual-energy implantation. Since ion-flow was small and implantation time was long enough, the emergency of beta-SiC was avoided and the dynamic annealing effect was depressed. The pre-amorphization of the Si substrate increased the fraction of the substitutions carbon and the two-step annealing reduced point defects. As a result, Si1-yCy alloys with high quality was recrystallized on Si substrate.

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We have measured photoluminescence of ZnSxTe1-x alloys (x > 0.7) at 300 K and under hydrostatic pressure up to 7 GPa. The spectra contain only a broad emission band under excitation of the 406.7 nm line. Its pressure coefficients are 47, 62 and 45 meV/GPa for x = 0.98, 0.92 and 0.79 samples, which are about 26%, 7% and 38% smaller than that of the band gap in the corresponding alloys. The Stokes shifts between emission and absorption of the bands were calculated by fitting the pressure dependence of the emission intensity, being 0.29, 0.48 and 0.13 eV for the three samples, respectively. The small pressure coefficient and large Stokes shift indicate that the emission band observed in our samples may correspond to the Te isoelectronic center in the ZnSxTe1-x alloy.

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National Natural Science Foundation of China [40771205]; National Science Fund for Distinguished Young Scholars [40625002]; Chinese Academy of Sciences [KZCX2-YW-315]

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To find the pathologic cause of the children's dental fluorosis in southwestern China, diet structure before the age of 6 and prevalence rate of dental fluorosis (DF) of 405 children were investigated, and the fluorine and arsenic content of several materials were determined. The prevalence rate of DF of children living on roasted corn before the age of 6 is 100% with nearly 95% having the mild to severe DF; while that of children living on non-roasted corn or rice is less than 5% with all having very mild DF. The average fluorine and arsenic concentration are 20.26 mg/kg and 0.249 mg/kg in roasted corn, which are about 16 times and 35 times more than in non-roasted corn, respectively. The average fluorine concentration is 78 mg/kg in coal, 1116 mg/kg in binder clay and 313 mg/kg in briquette (coal mixed with clay). The average arsenic concentration of coal is 5.83 mg/kg, the binder clay is 20.94 mg/kg, with 8.52 mg/kg in the briquette. Living on roasted corn and chili is the main pathologic cause of endemic fluorosis in southwestern China. The main source of fluorine and arsenic pollution of roasted corn and chill is the briquette of coal and binder clay. (C) 2010 Elsevier B.V. All rights reserved.

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The microstructures and mechanical properties of Mg-6Zn-5Al-4Gd-1RE (RE = Ce or Y) alloys were investigated. The addition of Ce or Y obviously refines the grain size for the Mg-6Zn-5Al-4Gd-based alloy, while the Y element has a better refining effect. The Ce and Y show different grain-refining mechanisms: Ce addition mostly promotes the growth of secondary dendrite, while Y addition mainly increases the heterogeneous nucleation sites.

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Ti45Zr30Ni25Yx (x = 1, 3, 5 and 7) alloys were prepared by melt-spinning at wheel velocity of 20 m s(-1). The effect of additive Y on phase structure and electrochemical performance of melt-spun alloys was investigated. Ti45Zr30Ni25Yx melt-spun alloys were composed of I-phase and amorphous phase. T

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The Mg-3Al-3RE alloys (RE, the cerium-rich or the yttrium-rich misch metal) were smelted in a resistance furnace under the protective flux from the Mg-RE master alloys and pure magnesium ingots. The microstructure and mechanical properties of samples prepared by steel mould casting method were investigated.

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Dry sliding tests were performed on as-cast magnesium alloys Mg97Zn1Y2 and AZ91 using a pin-on-disc configuration. Coefficients of friction and wear rates were measured within a load range of 20-380 and 20-240 N at a sliding velocity of 0.785 m/s. X-ray differactometer, scanning electron microscopy, tensile testing machine were used to characterize the microstructures and mechanical properties of Mg97Zn1Y2 alloy and AZ91 alloy. Worn surface morphologies of Mg97Zn1Y2 and AZ91 were examined using scanning electron microscopy.

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Ti-based icosahedral quasicrystalline phase (I-phase) exhibited excellent hydrogen storage property for special structure. Unfortunately, the application as the negative electrode material of the nickel-metal hydride batteries was limited due to the poor electrochemical kinetics. Meanwhile, rare-earth element was beneficial to the electrochemical properties of Ti, Zr-based alloy.