94 resultados para Cu-based alloys


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Zr48.5Cu46.5Al5 bulk metallic glass (BMG) composites with diameters of 3 and,4 mm were prepared through suction casting in an arc melting furnace by modulating the alloy composition around the monothetic BMG composition of the high glass forming ability. Microstructural characterization reveals that the composites contain micron-sized CuZr phase with martensite structure, as well as nano-sized Zr2Cu crystalline particles and Cu10Zr7 plate-like phase embedded in an amorphous matrix. Room temperature compression tests showed that the composites exhibited significant strain hardening and obvious plastic strain of 7.7% for 3 nun and 6.4% for 4 nun diameter samples, respectively.

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Zr49Cu46Al5 and Zr48.5Cu46.5Al5 bulk metallic glasses(BMGs) with diameter of 5 mm were prepared through water-cooled copper mold casting. The phase structures of the two alloys were identified by X-ray diffractometry(XRD). The thermal stability was examined by differential scanning calorimetry(DSC). Zr49Cu46Al5 alloy shows a glass transition temperature, T, of about 689 K, an crystallization temperature, T-x, of about 736 K. The Zr48.5Cu46.5Al5 alloy shows no obvious exothermic peak. The microstructure of the as-cast alloys was analyzed by transmission electron microscopy(TEM). The aggregations of CuZr and CuZr2 nanocrystals with grain size of about 20 nm are observed in Zr49Cu46Al5 nanocrystalline composite, while the Zr48.5Cu46.5Al5 alloy containing many CuZr martensite plates is crystallized seriously. Mechanical properties of bulk Zr49Cu46Al5 nanocrystalline composite and Zr48.5Cu46.5Al5 alloy measured by compression tests at room temperature show that the work hardening ability of Zr48.5Cu46.5Al5 alloy is larger than that of Zr48.5Cu46.5Al5 alloy.

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La57.6Al17.5(Cu,Ni)(24.9) and La64Al14(Cu,Ni)(22) bulk metallic glasses (BMGs) were prepared by copper-mould casting method. Plastic deformation behavior of the two BMGs at various loading rates was studied by nanoindentation. The results showed that the La57.6Al17.5(Cu,Ni)(24.9) BMG with a glass transition temperature of 423 K exhibited prominent serrated flow at low loading rates, whereas less pronounced serrated flow at high rates during nanoindentation. In contrast, the La64Al14(Cu,Ni)(22) BMG with a glass transition temperature of 401 K exhibited prominent serrated flow at high loading rates. The different rate dependency of serrated flow in the two La-based BMGs is related to the different glass transition temperature, and consequently the degree of viscous flow during indentation at room temperature. A smoother flow occurs in the alloy with relatively lower glass transition temperature, due to the relaxation of stress concentration.

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Experimental trials of autogenous deep penetration welding between dissimilar cast Ni-based superalloy K418 and alloy steel 42CrMo flat plates with 5.0 mm thickness were conducted using a 3 kW continuous wave (CW) Nd:YAG laser. The influences of laser output power, welding velocity and defocusing distance on the morphology, welding depth and width as well as quality of the welded seam were investigated. Results show that full keyhole welding is not formed on both K4.18 and 42CrMo side, simultaneously, due to the relatively low output power. Partial fusion is observed on the welded seam near 42CrMo side because of the large disparity of thermal-physical and high-temperature mechanical properties of these two materials. Tile rnicrohardness of the laser-welded joint was also examined and analyzed. It is suggested that applying negative defocusing in the range of Raylei length can increase the welding depth and improve tile coupling efficiency of the laser materials interaction. (c) 2007 Elsevier Ltd. All rights reserved.

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Molecular dynamics (MD) simulations are carried out to analyze the diffusion bonding at Cu/Al interfaces. The results indicate that the thickness of the interfacial layer is temperature-dependent, with higher temperatures yielding larger thicknesses. At temperatures below 750 K, the interface thickness is found to increase in a stepwise manner as a function of time. At temperatures above 750 K, the thickness increases rapidly and smoothly. When surface roughness is present, the bonding process consists of three stages. In the first stage, surfaces deform under stress, resulting in increased contact areas. The second stage involves significant plastic deformation at the interface as temperature increases, resulting in the disappearance of interstices and full contact of the surface pair. The last stage entails the diffusion of atoms under constant temperature. The bonded specimens show tensile strengths reaching 88% of the ideal Cu/Al contact strength. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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The microstructure of Nd_{60}Al_{10}Ni_{10}Cu_{20-x}Fex (x = 0, 5, 7, 10, 15, 20) alloys can change from homogeneous phase to a composite structure consisting of amorphous phase plus clusters or nanocrystals by adjusting the Fe content. The effect of microstructure on the plastic deformation behavior in this alloy system is studied by using nanoindentation. The alloys with homogeneous amorphous structure exhibit pronounced flow serrations during the loading process of nanoindentation. The addition of Fe changes the plastic deformation behavior remarkablely. No flow serration is observed in the alloys with high Fe content for the indentation depth of 500 nm. The mechanism for the change of plastic serrated flow behavior is discussed.

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Zr-based bulk metallic glass matrix composites with the composition of Zr56.2Ti13.8Nb5.0Cu6.9Ni5.6Be12.(5) were synthesized by the copper-mould suction casting and the Bridgman solidification. The composite, containing a well-developed flowery beta-Zr dendritic phase, was obtained by the Bridgman solidification with the withdrawal velocity of 0.8 mm/s and the temperature gradient of 45 K/mm, and the ultimate strength of 2050 MPa and fracture plastic strain of 14.6% of the composite were achieved, which was mainly interpreted by the homogeneous dispersion of bcc beta-Zr phase in the glass matrix. Crown Copyright (C) 2008 Published by Elsevier B.V. All rights reserved.

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A nonvolatile recording scheme is proposed using LiNbO3:Ce:Cu crystals and modulated UV light to record gratings simultaneously in two centres and using red light to bleach the grating in the shallow centre to realize persistent photorefractive holographic storage. Compared with the normal UV-sensitized nonvolatile holographic system, the amplitude of refractive-index changes is greatly increased and the recording sensitivity is significantly enhanced by recording with UV light in the LiNbO3:Ce:Cu crystals. Based on jointly solving the two-centre material equations and the coupled-wave equations, temporal evolutions of the photorefractive grating and the diffraction effciency are effectively described and numerically analysed. Roles of doping levels and recording-beam intensity are discussed in detail. Theoretical results confirm and predict experimental results.

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Modulated UV light is used to increase the sensitivity of the two-centre holographic recording. Inherent mechanisms of nonvolatile holographic recording in oxidized and reduced crystals are numerically analysed based on solving the two-centre material equations modilied for UV-Iight recording. Experiments verification is performed with an oxidized crystal and a reduced crystal, and the role of UV intensity on the sensitivity is presented.

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Two kinds of nickel(II) and copper(II) P-diketone complexes derived from thenoyltrifluoroacetone ligand with blue-violet light absorption were synthesized by reacting free ligand and different metal(II) ions in sodium methoxide solution. Their structures were postulated based on elemental analysis, ESI-MS, FT-IR spectra and UV-vis electronic absorption spectra. Smooth films on K9 glass substrates were prepared using the spin-coating method. Their solubility in organic solvents, absorption properties of thin film and thermal stability of these complexes were evaluated. (c) 2006 Elsevier B.V. All rights reserved.

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The structural and magnetic properties of Cu+ ions-implanted GaN films have been reported. Eighty kilo-electron-volt Cu+ ions were implanted into n-type GaN film at room temperature with fluences ranging from 1 x 10(16) to 8 x 10(16) cm(-2) and subsequently annealed at 800 degrees C for 1 h in N-2 ambient. PIXE was employed to determine the Cu-implanted content. The magnetic property was measured by the Quantum Design MPMS SQUID magnetometer. No secondary phases or clusters were detected within the sensitivity of XRD. Raman spectrum measurement showed that the Cu ions incorporated into the crystal lattice positions of GaN through substitution of Ga atoms. Apparent ferromagnetic hysteresis loops measured at 10 K were presented. The experimental result showed that the ferromagnetic signal strongly increased with Cu-implanted fluence from 1 x 10(16) to 8 x 10(16) cm(-2).

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We report a room temperature study of the direct band gap photoluminescence of tensile-strained Ge/Si0.13Ge0.87 multiple quantum wells grown on Si-based germanium virtual substrates by ultrahigh vacuum chemical vapor deposition. Blueshifts of the luminescence peak energy from the Ge quantum wells in comparison with the Ge virtual substrate are in good agreement with the theoretical prediction when we attribute the luminescence from the quantum well to the c Gamma 1-HH1 direct band transition. The reduction in direct band gap in the tensile strained Ge epilayer and the quantum confinement effect in the Ge/Si0.13Ge0.87 quantum wells are directly demonstrated by room temperature photoluminescence.

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Confinement factor and absorption loss of AlInGaN based multiquantum well laser diodes (LDs) were investigated by numerical simulation based on a two-dimensional waveguide model. The simulation results indicate that an increased ridge height of the waveguide structure can enhance the lateral optical confinement and reduce the threshold current. For 405 nm violet LDs, the effects of p-AlGaN cladding layer composition and thickness on confinement factor and absorption loss were analyzed. The experimental results are in good agreement with the simulation analysis. Compared to violet LD, the confinement factors of 450 nm blue LD and 530 nm green LD were much lower. Using InGaN as waveguide layers that has higher refractive index than GaN will effectively enhance the optical confinement for blue and green LDs. The LDs based on nonpolar substrate allow for thick well layers and will increase the confinement factor several times. Furthermore, the confinement factor is less sensitive to alloys composition of waveguide and cladding layers, being an advantage especially important for ultraviolet and green LDs.

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Based on the results of the temperature-dependent photoluminescence (PL) measurements, the broad PL emission in the phase-separated GaNP alloys with P compositions of 0.03, 0.07, and 0.15 has investigated. The broad PL peaks at 2.18, 2.12 and 1.83 eV are assigned to be an emission from the optical transitions from several trap levels, possibly the iso-electronic trap levels related to nitrogen. With the increasing P composition (from 0.03 to 0.15), these iso-electronic trap levels are shown to become resonant with the conduction band of the alloy and thus optically inactive, leading to the apparent red shift (80-160meV) of the PL peak energy and the trend of the red shift is strengthened. No PL emission peak is observed from the GaN-rich GaNP region, suggesting that the photogenerated carriers in the GaN-rich GaNP region may recombine with each other via non-radiation transitions.

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Radiant heat conversion performance dominated by the active layer of Ga0.84In0.16As0.14Sb0.86 diode has been systematically investigated based on an analytic absorption spectrum, which is suggested here by numerically fitting the limited experimental data. For the concerned diode configuration, our calculation demonstrates that the optimal base doping is 3-4 x 10(17) cm(-3), which is less sensitive to the variation of the external radiation spectrum. Given the scarcity of the alloy elements, an economical device configuration of the 0.2-0.6 mu m emitter and the 4-6 mu m base would be particularly acceptable because the corresponding conversion efficiency cannot exhibit discouraging degradation in comparison to the one for the optimal structure, the thickness of which may be up to 10 mu m. More importantly, the method we suggested here to calculate alloy absorption can be easily transferred to other composition, thus bringing great convenience for design or optimization of the optoelectronic device formed by these alloys.