Effect of growth conditions on the GaN thin film by sputtering deposition

The phase transition between thermodynamically stable hexagonal wurtzite (h-WZ) gallium nitride (GaN) and metastable cubic zinc-blende (c-ZB) GaN during growth by radio-frequency planar magnetron sputtering is studied. GaN films grown on substrates with lower mismatches tend to have a h-WZ structure, but when grown on substrates with higher mismatches, a c-ZB structure is preferred. GaN films grown under high nitrogen pressure also tend to have a h-WZ structure, whereas a c-ZB structure is preferred when grown under low nitrogen pressure. In addition, low target-power growth not only helps to improve hexagonal GaN (h-GaN) crystalline quality at high nitrogen pressure on low-mismatch substrates, but also enhances cubic GaN (c-GaN) quality at low nitrogen pressure on high-mismatch substrates. (c) 2007 Elsevier B.V. All rights reserved.

Strain-induced in-plane optical anisotropy in (001) GaAs/AlGaAs superlattice studied by reflectance difference spectroscopy

In-plane optical anisotropy (IPOA) in (001) GaAs/AlGaAs superlattice induced by uniaxial strain has been investigated by reflectance difference spectroscopy (RDS). Uniaxial strain on the order of 10(-4) was introduced by bending a strip sample with a stress apparatus. The IPOA of all interband transitions shows a linear dependence on strain. The birefringence and dichroism spectra induced by strain are obtained by RDS on the basis of a three-phase model, which is in good agreement with the reported results. (c) 2006 American Institute of Physics.

Local environment of Er3+ in Er-doped Si nanoclusters embedded in SiO2 films

The local environment of Er3+ in heavily Er-doped (Er, 2.5 at. %) Si nanoclusters embedded in SiO2 films annealed at various temperatures was investigated by using the fluorescence-extended x-ray absorption fine structure spectroscopy. The results show that annealing caused a large effect on the local environment of Er3+ surrounded by O atoms and the 1.54 mu m photoluminescence intensity. The correlation between the local environment around Er3+ and the corresponding 1.54 mu m photoluminescence was discussed. (c) 2006 American Institute of Physics.

Effects of ZnO interlayers on thick GaN/Si film prepared by RF magnetron sputtering

We have successfully prepared a high-quality 2 mu m-thick GaN film with three inserted 30 nm-thick ZnO interlayers on Si (111) substrate without cracks by magnetron sputtering. The effects of the thickness and number of ZnO interlayers on the crystal quality of the GaN films were studied. It was found that the GaN crystal quality initially improved with the increase of the thickness of ZnO interlayers, but deteriorated quickly when the thickness exceeded 30 nm. Multiple ZnO interlayers were used as an effective means to further improve the crystal quality of the GaN film. By increasing the number of interlayers up to three, the cracks can be constrained to a certain extent, and the crystal quality of the GaN film greatly improved. (c) 2006 Elsevier B.V. All rights reserved.

Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering

Er-doped Si nanoclusters embedded in SiO2 (NCSO) films were prepared by radio frequency magnetron sputtering on either silicon or quartz substrates. A 1.16 mu m (1.08 eV) photoluminescence (PL) peak was observed from an Er-doped NCSO film deposited on a Si substrate. This 1.16 mu m peak is attributed to misfit dislocations at the NCSO/Si interface. The emission properties of the 1.16 mu m peak and its correlation with the Er3+ emission (1.54 mu m) have been studied in detail. The observed behavior suggests that the excitation mechanism of the 1.16 mu m PL is in a fashion similar to that shown for Er-doped Si nanoclusters embedded in a SiO2 matrix. (C) 2006 American Institute of Physics.

Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique

Radio frequency magnetron sputtering/post-carbonized-reaction technique was adopted to prepare good-quality GaN films on Al2O3(0 0 0 1) substrates. The sputtered Ga2O3 film doped with carbon was used as the precursor for GaN growth. X-ray diffraction (XRD) pattern reveals that the film consists of hexagonal wurtzite GaN. X-ray photoelectron spectroscopy (XPS) shows that no oxygen can be detected. Electrical and room-temperature photoluminescence measurements show that good-quality polycrystalline GaN films were successfully grown on Al2O3(0 0 0 1) substrates. (c) 2005 Elsevier B.V. All rights reserved.

In-situ synthesis of AlN powders and composite AlN powders with yttrium addition

Using Al-Mg and Al-Mg-Y alloys as raw materials and nitrogen as gas reactants, AIN powders and composite AIN powders by in-situ synthesis method were prepared. AIN lumps prepared by the nitriding of Al-Mg and Al-Mg-Y alloys have porous microstructure, which is favorable for pulverization. They have high purity, containing 1.23 % (mass fraction) oxygen impurity, and consisted of AIN single phase . The average particle size of AIN powders is 6.78 mum. Composite AlN powders consist of AlN phases and rare, earth oxide Y2O3 phase. The distribution of particle size of AIN powders shows two peaks. In view, of packing factor, AIN powders with such size distribution can easily be sintered to high density.

Thermodynamics and kinetics analysis of in-situ synthesizing AlN

AIN powders were prepared by in-situ synthesis technique. It is a reaction of binary molten Al-Mg alloys with highly pure nitrogen. It was confirmed through thermodynamics calculation that Mg element in Al-Mg alloys can decrease oxygen content in the reacting system. Thus, nitridation reaction can be performed to form AIN. Moreover, an analysis of kinetics shows that the nitridation reaction of Al-Mg alloys can be accelerated and transferred rapidly with the increment of Mg content.

Observation of photogalvanic current for interband absorption in InN films at room temperature

The linear and circular photogalvanic effects have been observed in undoped InN films for the interband transition by irradiation of 1060 nm laser at room temperature. The spin polarized photocurrent depends on the degree of polarization, and changes its sip when the radiation helicity changes from left-handed to right-handed. This result indicates the sizeable spin-orbit interaction in the InN epitaxial layer and provides an effective method to generate spin polarized photocurrent and to detect spin-splitting effect in semiconductors with promising applications on spintronics.

Morphology and wetting layer properties of InAs/GaAs nanostructures

In this work, we present the growth of InAs rings by droplet epitaxy. A complete process from the rings formation to their density saturation has been demonstrated: A morphological evolution with the varying of the indium deposition amount has been, clearly observed. Our results indicate that there, is a critical deposition amount (similar to 1.1 ML) for the indium to form InAs dots before droplets form; there is also a critical deposition amount (similar to 1.4 ML) to form InAs ring, but it is caused by the formation of droplets as the deposition amount increases. The density of the rings saturates when the deposition amount exceeds similar to 3.3 ML; because the adsorbed indium atoms block sites for further adsorption and the following supplied In only contributes to the size increase of In droplets. Still, as the In deposition amount increases, we can find coupled quantum rings. Moreover, the wetting layer properties of these structures are studied by reflectance difference spectroscopy, which shows a complicated evolution with the In amount. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Partial oxidation reforming of biomass fuel gas over nickel-based monolithic catalyst with naphthalene as model compound

With naphthalene as biomass tar model compound, partial oxidation reforming (with addition of O-2) and dry reforming of biomass fuel gas were investigated over nickel-based monoliths at the same conditions. The results showed that both processes had excellent performance in upgrading biomass raw fuel gas. Above 99% of naphthalene was converted into synthesis gases (H-2+CO). About 2.8 wt% of coke deposition was detected on the catalyst surface for dry reforming process at 750 degrees C during 108 h lifetime test. However, no Coke deposition was detected for partial oxidation reforming process, which indicated that addition of O-2 can effectively prohibit the coke formation. O-2 Can also increase the CH4 conversion and H-2/CO ratio of the producer gas. The average conversion of CH4 in dry and partial oxidation reforming process was 92% and 95%, respectively. The average H-2/CO ratio increased from 0.95 to 1.1 with the addition of O-2, which was suitable to be used as synthesis gas for dimethyl ether (DME) synthesis.

黄土丘陵区油松天然次生林林窗特征与更新动态

研究了黄土丘陵区油松天然次生林林窗的形状、大小结构、分布、形成木特征及其更新状况.结果表明:在油松天然次生林中,林冠林窗(CG)和扩展林窗(EG)面积均呈以小林窗为主的偏态分布.CG平均面积为31.15 m2,以20~40 m2林窗的数量比和面积比最大,分别为38.24%和30.50%;EG平均面积为58.04 m2,以30~60 m2的数量比和面积比最大,分别为36.77%和27.79%,且CG的平均面积占EG平均面积的53.67%;林窗形状多呈椭圆形,高度多在14~16 m;林窗形成年龄以10~20年为主,占33.82%.林窗中基折和枯立木分别占形成木总数的47.66%和23.44%.林窗形成的主要因素是人为间伐或盗伐,树木衰老等引起的抗性下降、干旱、病虫害等也是导致树木死亡的原因之一;每个林窗中平均有1.89个形成木,其中以2株形成木的林窗最多.林窗形成木主要是油松,其次为山杨、白桦和辽东栎等.形成木的径级呈明显的偏态分布,以10~20 cm和21~30 cm径级最为普遍,分别占总数的25.0%和45.31%,与林窗面积偏态分布吻合;林窗内林木的更新状况好于林下,且油松幼苗不存在断层,而油松林下幼苗在年...

固斑蝰蛇毒C-型凝集素样蛋白Dabocetin及L-氨基酸氧化酶DRS-LAO的研究

本论文研究了从圆斑蛙蛇泰国亚种（Daboia russellii siamensis）蛇毒中纯化的C一型凝集素样蛋白Dabocetin和L一氨基酸氧化酶DRS一AO的理化性质、生物学活性和分子克隆。Dabocetin是分子量约为28扔。的异二聚体蛋白，它由分子量约为15.0kDa和14．5kDa的两个同源亚基以和p共价结合形成。N－末端氨基酸序列比较显示，Dabocetin与目前已知的蛇毒c一型凝集素样蛋白有很高的同源性。即使在终浓度达50．0。叫而时，Dabocetin也不能直接诱导血小板聚集。此外，在终浓度为40.00μg/ml时，Dabocetin几乎不能抑制由AdP，TMVA和stejnulxin诱导的血小板聚集。但是，Dabocetin呈剂量依赖地抑制瑞斯托霉素诱导的血小板凝集，其半数抑制率ICS。值为10.80ug/ml。流式细胞仪分析表明，Dabocetin显著抑制单克隆抗体522与GPIba的结合，提示Dabocetin很可能是一个GPIb结合蛋白。从圆斑蛙蛇的毒腺中克隆到了7个编码不同蛇毒C一型凝集素样蛋白亚基的七DNA（命名为DRs一1至DRs一7）。其中，DRsLS编码Dabocetin的a亚基，DRS一6编码Dabocetin的p亚基。DRs一1和DRS一2很可能是圆斑蛙蛇毒腺中表达的X因子激活剂的两条轻链LCZ和LCI的山NA。DRS一3，DRS毛4和DRSL7可能是圆斑蛙蛇毒腺中表达的C一型凝集素样蛋白p亚基的。NA。DRsLAO是一个新的L一氨基酸氧化酶，比活力为1．98U加噶。十二烷基磺酸钠一聚丙烯酞氨凝胶电泳（SDs-PAGE）分析显示，该酶在还原和非还原条件下均呈现一条蛋白带，表观分子量约为58kDa。N-末端氨基酸序列比较显示，DRS一AO与目前已知的蛇毒L一氨基酸氧化酶有很高的同源性。该酶的最适底物为L一亮氨酸，最适pH为8．8。DRs一Ao呈剂量依赖地抑制扔P和仆IvA诱导的血小板聚集，其半数抑制率ICS。值分别为32.8μg/ml和32.3μg/ml。DRS-LAO对金黄色葡萄球菌（灯Cc25923）和耐甲氧西林金黄色葡萄球菌有较强的抗菌作用。DRs一AO对金黄色葡萄球菌必Tcc25923）的最低抑菌浓度卿C）和最低杀菌浓度耐甲氧西林金黄色葡萄球菌的孤CS。和呱Cg。值分别为18．。林留时和36.0μg/ml；DRSLAo对耐甲氧西林金黄色葡萄球菌的MBC50和MBCg。值分别为36.0μg/ml和72.0μg/ml。通过对DRS一AO的分子克隆，得到了编码DRS-AO的部分cDNA序列。