Observation of photogalvanic current for interband absorption in InN films at room temperature

The linear and circular photogalvanic effects have been observed in undoped InN films for the interband transition by irradiation of 1060 nm laser at room temperature. The spin polarized photocurrent depends on the degree of polarization, and changes its sip when the radiation helicity changes from left-handed to right-handed. This result indicates the sizeable spin-orbit interaction in the InN epitaxial layer and provides an effective method to generate spin polarized photocurrent and to detect spin-splitting effect in semiconductors with promising applications on spintronics.

The linear and circular photogalvanic effects have been observed in undoped InN films for the interband transition by irradiation of 1060 nm laser at room temperature. The spin polarized photocurrent depends on the degree of polarization, and changes its sip when the radiation helicity changes from left-handed to right-handed. This result indicates the sizeable spin-orbit interaction in the InN epitaxial layer and provides an effective method to generate spin polarized photocurrent and to detect spin-splitting effect in semiconductors with promising applications on spintronics.

zhangdi于2010-03-09批量导入

Made available in DSpace on 2010-03-09T02:11:51Z (GMT). No. of bitstreams: 1 651.pdf: 241881 bytes, checksum: 1d33eee9f9fefff84df60aa66fd81a76 (MD5) Previous issue date: 2008

IEEE.

[Tang, C. G.; Chen, Y. H.; Liu, Y.; Zhang, R. Q.; Liu, X. L.; Wang, Z. G.] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

IEEE.