Bio-syngas production from biomass catalytic gasification

A promising application for biomass is liquid fuel synthesis, such as methanol or dimethyl ether (DME). Previous studies have studied syngas production from biomass-derived char, oil and gas. This study intends to explore the technology of syngas production from direct biomass gasification, which may be more economically viable. The ratio of H-2/CO is an important factor that affects the performance of this process. In this study, the characteristics of biomass gasification gas, such as H-2/CO and tar yield, as well as its potential for liquid fuel synthesis is explored. A fluidized bed gasifier and a downstream fixed bed are employed as the reactors. Two kinds of catalysts: dolomite and nickel based catalyst are applied, and they are used in the fluidized bed and fixed bed, respectively. The gasifying agent used is an air-steam mixture. The main variables studied are temperature and weight hourly space velocity in the fixed bed reactor. Over the ranges of operating conditions examined, the maximum H-2 content reaches 52.47 vol%, while the ratio of H-2/CO varies between 1.87 and 4.45. The results indicate that an appropriate temperature (750 degrees C for the current study) and more catalyst are favorable for getting a higher H-2/CO ratio. Using a simple first order kinetic model for the overall tar removal reaction, the apparent activation energies and pre-exponential factors are obtained for nickel based catalysts. The results indicate that biomass gasification gas has great potential for liquid fuel synthesis after further processing.

手性吡啶醇基联萘酚衍生物的合成及其在不对称催化反应中的应用

C2-对称性的1,1’-联萘-2-酚(BINOL)及其衍生物在不对称催化等领域受到了广泛的关注。联萘酚自身能够与具有路易斯酸性的亲氧过渡金属配位完成不对称催化，但往往不能在不对称催化反应中给出满意的结果；可以通过对其骨架中多个可修饰位点的改造和修饰，从而影响金属中心周围的环境，达到不对称诱导的目的。因此对联萘酚的结构改造成为人们始终关注的焦点和努力的方向。 本论文以天然的手性酮(-)-葑酮、(+)-樟脑、(-)-薄荷酮为原料合成两个系列的手性吡啶醇类化合物2a-c，12a-b，并通过与3-或3,3’-单或双(硼酸嚬呐醇酯)- 2,2’-双(甲氧甲基)-1,1’-联-2-萘酚的Suzuki偶联反应在联萘酚的3,3’-位引入手性吡啶醇取代基，合成了两个系列手性联萘酚衍生物，十对非对映异构体8a-c，9a-c，19a-b，20a-b，所有反应中间体及最终产物均已用1H NMR，13C NMR，IR和ESI-MS表征和验证结构。 探讨了两个系列手性配体在芳香醛不对称ZnEt2加成反应、苯甲硫醚不对称氧化反应中的应用。其中，第一系列六对非对映异构体8a-c，9a-c在芳香醛的不对称ZnEt2加成反应中表现出中等的反应活性及较好的对映选择性，最高可达96% e.e.对映选择性；在苯甲硫醚的不对称环氧化中，这些配体表现出较好的反应活性和中等的对映选择性，最好可达51％e.e.对映选择性。第二系列四对非对映异构体19a-b，20a-b在芳香醛的不对称ZnEt2加成反应中也表现出中等的反应活性及较好的对映选择性(91% e.e.值)，但较第一系列配体要低一些；在苯甲硫醚的不对称环氧化中，这些配体同样表现出较好的反应活性和中等的对映选择性，但较第一系列配体显示出较高的手性诱导能力，e.e.值最高可达71％。 同时，将部分配体与金属钼(Ⅵ)配位合成手性金属配合物，对部分配合物进行单晶结构的表征，确定配合物中具有分子内氧桥键的结构。并初步探讨了金属配合物在非官能团化烯烃的不对称环氧化反应中的应用。

INTERFACIAL REACTIONS IN THE CO/SI/GAAS AND SI/CO/GAAS SYSTEMS

The interfacial reactions between thin films of cobalt and silicon and (100)-oriented GaAs substrates in two configurations, Co/Si/GaAs and Si/Co/GaAs, were studied using a variety of techniques including Auger electron spectroscopy, x-ray diffraction, and transmission electron microscopy. The annealing conditions were 200, 300, 400, 600-degrees-C for 30 min, and rapid thermal annealing for 15 s. It was found that Si layer in the Co/Si/GaAs system acts as a barrier at the interface between Co and GaAs when annealed up to 600-degrees-C. The interfacial reaction between Co and Si is faster than that between Co and GaAs in the system of Si/Co/GaAs. The sequence of compound formation for the two metallizations studied (Co/Si/GaAs and Si/Co/GaAs) depends strongly on the sample configuration as well as the layer thickness of Si and Co (Co/Si atomic ratio). From our results, it is promising to utilize Co/Si/GaAs multilayer film structure to make a CoSi2/GaAs contact, and this CoSi2 may offer an alternative to the commonly used W silicides as improved gate metallurgies in self-aligned metal-semiconductor field effect transistor (MESFET) technologies.

INTERFACIAL FORMATION PROCESS AND REACTIONS BETWEEN AU AND HYDROGENATED AMORPHOUS SI STUDIED BY XPS AND AES

Interfacial formation processes and reactions between Au and hydrogenated amorphous Si have been studied by photoemission spectroscopy and Auger electron spectroscopy. A three-dimensional growth of Au metal cluster occurs at initial formation of the Au/a-Si:H interface. When Au deposition exceeds a critical time, Au and Si begin interdiffusing and react to create an Au-Si alloy region. Annealing enhances interdiffusion and a Si-rich region exists on the topmost surface of Au films on a-Si:H.

PHOTOEMISSION-STUDY OF THE INTERFACIAL FORMATION PROCESS AND REACTIONS BETWEEN AL AND HYDROGENATED AMORPHOUS SI

Using photoemission spectroscopy and Auger electron spectroscopy, the interfacial formation process and the reactions between Al and hydrogenated amorphous Si are probed, and annealing behaviors of the Al/a-Si:H system are investigated as well. It is found that a three-dimensional growth of Al metal clusters which includes reacted Al and non-reacted metal Al occurs at the initial Al deposition time, reacted Al and Si alloyed layers exist in the Al/a-Si:H interface, and non-reacted Al makes layer-by-layer growth forming a metal Al layer on the sample surface. The interfacial reactions and element interdiffusion of Al/a-Si:H are promoted under the vacuum annealing.

Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers

The annealing of Mg-doped GaN with Pt and Mo layers has been found to effectively improve the hole concentration of such material by more than 2 times as high as those in the same material without metal. Compared with the Ni and Mo catalysts, Pt showed good activation effect for hydrogen desorption and ohmic contact to the Ni/Au electrode. Despite the weak hydrogen desorption, Mo did not diffuse into the GaNepilayer in the annealing process, thus suppressing the carrier compensation phenomenon with respect to Ni and Pt depositions, which resulted in the high activation of Mg acceptors. For the GaN activated with the Ni, Pt, and Mo layers, the blue emission became dominant, followed by a clear peak redshift and the degradation of photoluminescence signal when compared with that of GaN without metal.