A Low Power Dissipation Wide-Band CMOS Frequency Synthesizer for a Dual-Band GPS Receiver

This paper presents a wide tuning range CMOS frequency synthesizer for a dual-band GPS receiver,which has been fabricated in a standard 0.18μm RF CMOS process. With a high Q on-chip inductor, the wide-band VCO shows a tuning range from 2 to 3.6GHz to cover 2.45 and 3.14GHz in case of process corner or temperature variation,with a current consumption varying accordingly from 0.8 to 0.4mA,from a 1.8V supply voltage. Measurement results show that the whole frequency synthesizer consumes very low power of 5.6mW working at L1 band with in-band phase noise less than - 82dBc/Hz and out-of-band phase noise about - ll2dBc/Hz at 1MHz offset from a 3. 142GHz carrier. The performance of the frequency synthesizer meets the requirements of GPS applications very well.

1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy

The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots （QDs） by molecular beam epitaxy （MBE） is investigated,and a QD laser diode lasing at 1.33μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence （PL） spectra at room temperature is less than 35meV for most of the multi-layer QD samples,revealing good,reproducible MBE growth conditions. Moreover,atomic force microscopy images show that the QD surface density can be controlled in the range from 1×10^10 to 7 ×10^10 cm^-2 . The best PL properties are obtained at a QD surface density of about 4×10^10cm^-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported.

X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD

The growth,fabrication,and characterization of 0.2μm gate-length AlGaN/GaN HEMTs,with a high mobility GaN thin layer as a channel,grown on (0001) sapphire substrates by MOCVD,are described.The unintentionally doped 2.5μm thick GaN epilayers grown with the same conditions as the GaN channel have a room temperature electron mobility of 741cm2/(V·s) at an electron concentration of 1.52×1016 cm-3.The resistivity of the thick GaN buffer layer is greater than 108Ω·cm at room temperature.The 50mm HEMT wafers grown on sapphire substrates show an average sheet resistance of 440.9Ω/□ with uniformity better than 96%.Devices of 0.2μm×40μm gate periphery exhibit a maximum extrinsic transconductance of 250mS/mm and a current gain cutoff frequency of77GHz.The AlGaN/GaN HEMTs with 0.8mm gate width display a total output power of 1.78W (2.23W/mm) and a linear gain of 13.3dB at 8GHz.The power devices also show a saturated current density as high as 1.07A/mm at a gate bias of 0.5V.

RCE photodiodes at wavelength band of 1.06 μm

Resonant cavity enhancement (RCE) typed optical detector and modulator which operating at wavelength band of 1.06 μm is reported. The peak quantum efficiency of detector is reasonably high as 50% without bias, and the photocurrent contrast ratio of modulator is 3.6 times at -3.5 V as compared to 0 V. The incident angle dependence of RCE device's photoelectric response is investigated carefully.

1.3μm Si-Based MOEMS Optical Tunable Filter with a Tuning Range of 90nm

Optical filters capable of single control parameter-based wide tuning are implemented and studied. A prototype surface micromachined 1.3μm Si-based MOEMS (micro-opto-electro-mechanical-systems) tunable filter exhibits a continuous and large tuning range of 90 nm at 50 V tuning voltage. The filter can be integrated with Si-based photodetector in a low-cost component for coarse wavelength division multiplexing systems operating in the 1.3μm band.

Study on optical band gap of boron-doped nc-Si : H film

The optical band gap (E-g) of the boron (B)-doped hydrogenated nano-crystalline silicon (nc-Si:H) films fabricated using plasma enhanced chemical vapor deposition (PECVD) was investigated in this work. The transmittance of the films were measured by spectrophotometric and the E-g was evaluated utilizing three different relations for comparison, namely: alphahnu=C(hnu-E-g)(3), alphahnu=B-0(hnu-E-g)(2), alphahnu=C-0(hnu-E-g)(2). Result showed that E-g decreases with the increasing of Boron doping ratio, hydrogen concentration, and substrate's temperature (T-s), respectively. E-g raises up with rf power density (P-d) from 0.45W.cm(-2) to 0.60w.cm(-2) and then drops to the end. These can be explained for E-g decreases with disorder in the films.

Energy band and acceptor binding energy of GaN and AlxGa1-xN

The hole effective-mass Hamiltonian for the semiconductors of wurtzite structure is established, and the effective-mass parameters of GaN and AlxGa1-xN are given. Besides the asymmetry in the z and x, y directions, the linear term of the momentum operator in the Hamiltonian is essential in determining the valence band structure, which is different from that of the zinc-blende structure. The binding energies of acceptor states are calculated by solving strictly the effective-mass equations. The binding energies of donor and acceptor for wurtzite GaN are 20 and 131, 97 meV, respectively, which are inconsistent with the recent experimental results. It is proposed that there are two kinds of acceptors in wurtzite GaN. One kind is the general acceptor such as C, substituting N, which satisfies the effective-mass theory, and the other includes Mg, Zn, Cd etc., the binding energy of which deviates from that given by the effective-mass theory. Experimentally, wurtzite GaN was grown by the MBE method, and the PL spectra were measured. Three main peaks are assigned to the DA transitions from the two kinds of acceptor. Some of the transitions were identified as coming from the cubic phase of GaN, which appears randomly within the predominantly hexagonal material. The binding energy of acceptor in ALN is about 239, 158 meV, that in AlxGa1-xN alloys (x approximate to 0.2) is 147, 111 meV, close to that in GaN. (C) 2000 Published by Elsevier Science S.A. All rights reserved.

Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure

Microphotoluminescence (mu-PL) investigation has been performed at room temperature on InAs quantum dot (QD) vertical cavity surface emitting laser (VCSEL) structure in order to characterize the QD epitaxial structure which was designed for 1.3 mu m wave band emission. Actual and precise QD emission spectra including distinct ground state (GS) and excited state (ES) transition peaks are obtained by an edge-excitation and edge-emission (EEEE) mu-PL configuration. Conventional photoluminescence methods for QD-VCSELs structure analysis are compared and discussed, which indicate the EEEE mu-PL is a useful tool to determine the optical features of the QD active region in an as-grown VCSEL structure. Some experimental results have been compared with simulation results obtained with the aid of the plane-wave admittance method. After adjustment of epitaxial growth according to EEEE mu-PL measurement results, QD-VCSEL structure wafer with QD GS transition wavelength of 1300 nm and lasing wavelength of 1301 nm was obtained.

Search for signature inversion in the pi i(13/2) circle times upsilon i1(3/2) bands in Au-182,Au-184,Au-186

Search for low-spin signature inversion in the pi i(13/2) circle times nu i(13/2) bands in odd-odd Au-182,Au-184,Au-186 has been conducted through the standard in-beam gamma-spectroscopy techniques. The experiments for Au-182 and 186Au have been performed in the Japan Atomic Energy Agency (JAEA) via the Sm-152(Cl-35,5n)Au-182 and Yb-172(F-19,5n)Au-186 reactions, respectively. A study of Au-184 has been made using a multi-detector array GASP in LNL, Italy, via the Tb-159(Si-29,4n)Au-184 reaction. The pi i(13/2) circle times nu i(13/2) bands in these three nuclei have been identified and extended up to high-spin states. In particular, the inter-band connection between the pi i(13/2) nu i(13/2) band and the ground-state band in 184 Au has been established, leading to a firm spin-and-parity assignment for the pi i(13/2) circle times nu i(13/2) band. The low-spin signature inversion is found in the pi i(13/2) circle times nu i(13/2) bands in Au-182,Au-184,Au-186 according to our spin-assignment and the signature crossing observed at high-spin states.

Band properties of the transitional nucleus Pt-187

High-spin states in Pt-187 have been studied experimentally using the Yb-173(O-18, 4n) reaction at beam energies of 78 and 85 MeV. The previously known bands based on the nu i(13/2),nu 7/2(-)[503], and nu i(13/2)(2)nu j configurations have been extended to high-spin states, and new rotational bands associated with the nu 3/2(-)[512] and nu 1/2(-)[521] Nilsson orbits have been identified. The total Routhian surface calculations indicate that the transitional nucleus Pt-187 is very soft with respect to beta and gamma deformations. The band properties, such as level spacings, band crossing frequencies, alignment gains, and signature splittings, have been compared with the systematics observed in neighboring nuclei and have been interpreted within the framework of the cranked shell model. The rotational bands show different band crossing frequencies, which can be explained by the alignment either of i(13/2) neutrons or of h(9/2) protons. Importantly, evidence is presented for a pi h(9/2) alignment at very low frequency in the nu 7/2(-)[503] band. The proton nature of the band crossing is strongly suggested by comparing the measured B(M1;I -> I-1)/B(E2;I -> I-2) ratios with the theoretical values from the semiclassical Donau and Frauendof approach.

Observation of a pi h(9/2) circle times nu i(13/2) oblate band in Tl-188

Excited states in Tl-188 have been studied experimentally using the Gd-157(Cl-35;4n) reaction at a beam energy of 170 MeV. A rotational band built on the pi h(9/2) x nu i(13/2) configuration with oblate deformation has been established for Tl-188. Based on the structure systematics of the oblate pi h(9/2) x nu i(13/2) bands in the heavier odd-odd Tl nuclei, we have tentatively proposed spin values for the new band in Tl-188. The pi h(9/2) x nu i(13/2) oblate band in Tl-188 shows low-spin signature inversion, and it can be interpreted qualitatively by the two-quasiparticle plus rotor model including a J-dependent p-n residual interaction.

Identification of a quasiparticle band in very neutron-rich Zr-104

The high spin levels of a very neutron-rich Zr-104 nucleus have been reinvestigated by measuring the prompt. rays in the spontaneous fission of Cf-252. The ground-state band has been confirmed. A new sideband has been identified with a band-head energy at 1928.7 keV. The projected shell model is employed to investigate the band structure of Zr-104. The results of calculated levels are in good agreement with the experimental data, and suggest that the new band in Zr-104 may be based on the neutron nu 5/2(-)[532] circle times nu 3/2(+)[411] configuration.

Band properties of the transitional nucleus Pt-189

High-spin states in Pt-189 have been studied with the in-beam gamma-spectroscopy method via the Yb-176(O-18, 5n) reaction at beam energies of 88 MeV and 95 MeV. A new level scheme of Pt-189 has been established. Rotational bands based on the upsilon i(13/2)(-1), upsilon f(5/2)(p(3/2)) and upsilon i(13/2)(-2)upsilon f(p(3/2)) configurations, as well as several structures with irregular level spacings, have been observed. Properties of rotational bands have been analyzed in the framework of triaxial particle-rotor model. A gamma similar to -30 degrees triaxial shape and a near prolate shape have been proposed to the upsilon i(13/2)(-1) and uf(5/2)(p(3/2)) bands, respectively. Two Delta I=2 transition sequences with similar energies have been observed, and they have been proposed to be associated with the upsilon i(13/2)(-1)upsilon f(5/2)(p(3/2)) configuration. According to the relevant Nilsson orbitals, the bands built on the upsilon i(13/2)(-1)upsilon f(5/2)(p(3/2)) configuration could be interpreted as a pair of pseudo-spin partner.