Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure

Microphotoluminescence (mu-PL) investigation has been performed at room temperature on InAs quantum dot (QD) vertical cavity surface emitting laser (VCSEL) structure in order to characterize the QD epitaxial structure which was designed for 1.3 mu m wave band emission. Actual and precise QD emission spectra including distinct ground state (GS) and excited state (ES) transition peaks are obtained by an edge-excitation and edge-emission (EEEE) mu-PL configuration. Conventional photoluminescence methods for QD-VCSELs structure analysis are compared and discussed, which indicate the EEEE mu-PL is a useful tool to determine the optical features of the QD active region in an as-grown VCSEL structure. Some experimental results have been compared with simulation results obtained with the aid of the plane-wave admittance method. After adjustment of epitaxial growth according to EEEE mu-PL measurement results, QD-VCSEL structure wafer with QD GS transition wavelength of 1300 nm and lasing wavelength of 1301 nm was obtained.

Application of rapid thermal annealing on 1.3-1.55 mu m GaInNAs(Sb) lasers grown by molecular beam epitaxy

Rapid thermal annealing (RTA) has been demonstrated as an effective way to improve the crystal quality of GaInNAs(Sb) quantum wells (QWs). However, few investigations have been made into its application in laser growth and fabrication. We have fabricated 1.3 mu m GaInNAs lasers, both as -grown and with post-growth RTA. Enhanced photoluminescence (PL) intensity and decreased threshold current are obtained with RTA, but the characteristic temperature T-o and slope efficiency deteriorate. Furthermore, T-o has an abnormal dependence on the cavity length. We attribute these problems to the deterioration of the wafer's surface. RTA with deposition Of SiO2 was performed to avoid this deterioration, T-o was improved over the samples that underwent RTA without SiO2. Post-growth and in situ annealing were also investigated in a 1.55 mu m GaInNAsSb system. Finally, continuous operation at room temperature of a GaAs-based dilute nitride laser with a wavelength over 1.55 mu m was realized by introducing an in situ annealing process. (c) 2007 Elsevier B.V. All rights reserved.

GaAs-based room-temperature continuous-wave 1.59 mu m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

Starting from the growth of high-quality 1.3 mu m GaInNAs/GaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55 mu m by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5 mu m range GaInNAsSb/GaNAs QWs are quite comparable to the 1.3 mu m QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59 mu m lasing of a GaInNAsSb/GaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6 kA/cm(2) with as-cleaved facet mirrors. (c) 2005 American Institute of Physics.

The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content

Sb-assisted GaInNAs/GaAs quantum wells (QWs) with high (42.5%) indium content were investigated systematically. Transmission electron microscopy, reflection high-energy electron diffraction and photoluminescence (PL) measurements reveal that Sb acts as a surfactant to suppress three-dimensional growth. The improvement in the 1.55 mu m range is much more apparent than that in the 1.3 mu m range.. which can be attributed to the difference in N composition. The PL intensity and the full-width at half maximum of the 1.55 mu m single-QW were comparable with that of the 1.3 Am QWs. (c) 2006 Elsevier B.V. All rights reserved.

Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy

High (42.5%) indium content GaInNAs/GaAs quantum wells with room temperature emission wavelength from 1.3 mu m to 1.5 mu m range were successfully grown by Radio Frequency Plasma Nitrogen source assisted Molecular Beam Epitaxy. The growth parameters of plasma power and N-2 How rate were optimized systematically to improve the material quality. Photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54 mu m GaInNAs/GaAs QWs was kept as comparable as that in 1.31 mu m.

High performance of 1.55 mu m DFB integrated with vertically tapered self-aligned spot-size converter

A new type of self-aligned spotsize converter (SSC) integrated 1.55 mum DFB lasers had been proposed in this article. The upper optical confinement layer and the butt-coupled tapered thickness waveguide were regrown simultaneously, which not only offered the separate optimization of the active region and the integrated SSC, but also reduced the difficulty of the butt-joint selective regrowth. The vertical and horizontal far field angles were 9degrees and 12degrees respectively, the 1- dB misalignment tolerance were both 3.6 and 3.4 mum. The directed coupling efficiency to tapered single mode fiber was 48%.

Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 mu m grown by molecular beam epitaxy

The InGaNAs(Sb)/(GaNAs)/GaAs quantum wells (QWs) emitting at 1.3-1.55 mu m have been grown by molecular beam epitaxy (MBE). The parameters of the radio frequency (RF) such as RF power and flow rate are optimized to reduce the damages from the ions or energetic species. The growth temperature is carefully controlled to prevent the phase segregation and strain relaxation. The effects of Sb on the wavelength and quality are investigated. The GaNAs barrier is used to extend the wavelength and reduce the strain. A 1.5865 mu m InGaNAs(Sb)/GaNAs SQW edge emitting laser lasing at room temperature at continuous wave operation mode is demonstrated. (c) 2006 Elsevier B.V. All rights reserved.

Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 mu m

Metamorphic InGaAs quantum well structures grown on GaAs reveal strong light emission at 1.3-1.6 mu m, smooth surface with an average roughness below 2 nm. and good rectifying I-V characteristics. Dark line defects are found in the QW Post growth thermal annealing further improves the luminescence efficiency but does not remove those dark line defects. Some challenges of epitaxial growth using this method for laser applications are discussed. (c) 2006 Elsevier B.V. All rights reserved.

Supramolecular architectures, photophysics, and electroluminescence of 1,3,4-oxadiazole-based iridium(III) complexes: From mu-dichloro bridged dimer to mononuclear complexes

One mu-dichloro bridged diiridium complex and three mononuclear iridium(III) complexes based on the 1,3,4-oxadiazole derivatives as cyclometalated ligands and acetylacetonate (acac) or dithiolates O,O'-diethyldithiophosphate (Et(2)dtp) or N,N'-diethyldithiocarbamate (Et(2)dtc) as ancillary ligands have been synthesized and systematically studied by X-ray diffraction analysis. The results reveal that three mononuclear complexes all adopt distorted octahedral coordination geometry around the iridium center by two chelating ligands with cis-C-C and trans-N-N dispositions, which have the same coordination mode as the diiridium dimer. The dinuclear complex crystallizes in the monoclinic system and space group C2/c, whereas three mononuclear iridium complexes are all triclinic system and space group P(1) over bar. In the stacking structure of the dimer, one-dimensional tape-like chains along the b-axis are formed by hydrogen bondings, which are strengthened by pi stacking interactions between phenyl rings of 1,3,4-oxadiazole ligands. Then these chains assemble a three-dimensional alternating peak and valley fused wave-shape structure. In each stacking structure of three mononuclear complexes, two molecules form a dimer by the C-H center dot center dot center dot O hydrogen bondings, and these dimers are connected by pi stacking interactions along the b-axis, constructing a zigzag chain.

Dinuclear half-sandwich complexes containing bridging 1,2-dicarba-closo-dodecaborane-1,2-dichalcogenolato ligands. Molecular structures of Cp2Fe2(CO)(3)[mu-Se2C2(B10H10)], Cp2Ru2[mu-S2C2(B10H10)](2), and CP*Ru-2(2)(mu-Se)[mu-Se2C2(B10H10)].

Three prototypes of dinuclear complexes were obtained from the reactions of dilithium 1,2-dicarbacloso-dodecaborane-1,2-dichalcogenolates, (B10H10)C-2-(ELi)(2) (E = S, Se), with CpFe(CO)(2)Cl (1), CpRu(PPh3)(2)Cl (2), or [Cp*RuCl2](2) (3), respectively, and their structures have been determined by X-ray crystallography.

Synthesis and crystal structure of (1,3-(Bu2C5H3)-Bu-t)(2)Sm(mu-Cl)(2)Li(THF)(2)

Anhydrous SmCl3 reacts with two equal of Li(1-3-(Bu2C5H3)-Bu-t) to give a complex (1,3-(Bu2C5H3)-Bu-t)(2) Sm(mu -Cl)(2)Li(THF)(2) (C34H58Cl2LiO2Sm, M-r = 726.99), monoclinic, space group P2(1)/n, a = 10.615(2), b = 21.037(4), c = 17.166(3) Angstrom, beta = 93.60(3)degrees, V = 3825.7 (13) Angstrom (3), Z = 4, D-c = 1.262 Mg/m(3), mu = 1.699 mm(-1) and F(000) = 1508, final R = 0.0387 and wR = 0.0741 for 5320 observed[I greater than or equal to2 sigma (I)] reflections. The average Sm - C distance is 2.73 Angstrom. Sm - Cl1 and Sm - Cl2 distances are 2.719 (2) and 2. 697 (2) Angstrom, respectively. Two 1, 3-(Bu2C5H3)-Bu-t-ring centroids and two mu (2)-bridging chloride atoms around Sm atom form a distorted tetrahedron.

Catena-Poly[[[tetra-mu(2)-aqua-heptaaqua-(mu(2)-benzene-1,3,5-tricarboxylato)-mu(3)-hydroxido-trinickel(II)sodium]-mu(4)-benzene-1,3,5-tricarboxylato]sesqui-hydrate]

The title coordination polymer, {[Ni3Na(OH)(C9H3O6)(2)( H2O)(11)] center dot 1.5H(2)O}(n), is built up from three independent Ni-II ions and one Na-I cation bridged by benzene-2,4,6-tricarboxylate ( BTC) ligands and water molecules. Three Ni-II ions are bridged by three bidentate carboxylate groups of three BTC ligands, two aqua ligands and one OH- unit, to form a trinuclear metal cluster. The Na-I cation is bonded to the Ni-II cluster by two bridging water molecules. One of the three BTC ligands bridges neighbouring clusters into one-dimensional chains, which are further connected through a complex hydrogen-bonding scheme, forming a three-dimensional suprastructure. The title complex is isomorphous with the previously reported Co-II complex.

Spectroscopic properties of Er3+-doped tellurite glass for 1.55 mu m optical amplifier

Er3+-doped TeO2-BaO (Li2O, Na2O)-La2O3 tellurite glass system was prepared and their density, characteristic temperatures and optical properties were determined and investigated. For the TeO2-BaO-La2O3-Er2O3 system, composition with 10 mol% BaO presented the highest thermal stability and good infrared transmittance. Intense and broad 1.53 mu m infrared fluorescence were observed under 977 nm diode laser excitation and the most full width at half-maximum (FWHM) is similar to 60nm. According to absorption spectrum, we calculated the optical parameters by means of Judd-Ofelt and McCumber theory such as the fluorescence lifetimes which are about 2.72-3.25 ms and the maximum emission cross-sections which are similar to 1.0pm(2) at 1.531 mu m. The sigma(e) x FWHM value of composition with 10 mol% BaO for gain bandwidth is similar to 600 exceeding those in silicon and phosphate glasses. Our results indicated this kind of tellurite glasses could be used as an ideal host glass for optical amplifier. (c) 2005 Elsevier B.V. All rights reserved.

Infrared (1.2-1.6 mu m) luminescence in Yb, Cr : YAG with 940 nm diode pumping

Infrared (1.2-1.6 mum) luminescence in a yttrium aluminium garnet (YAG) crystal, co-doped with Yb (10 at.%) and Cr (0.05 at.%) ions, was investigated under CW laser diode pumping (lambda = 940 nm). The Cr4+ emission band was observed with its peak at 1.35 mum and measured to be about 6% with respect to Yb3+ IR luminescence (lambda = 1.03 mum). Analysis of the crystal absorption and luminescence spectra allows one to conclude that Yb3+-Cr4+ energy transfer is a mechanism responsible for the B-3(2)(T-3(2))-B-3(1)((3)A(2)) emission of Cr4+ ions. This crystal is promising as an efficient source of the near infrared emission. (C) 2004 Elsevier B.V. All rights reserved.

Infrared (1.2-1.6 mu m) luminescence in Cr4+: Yb3Al5O12 single crystal with 940 nm diode pumping

Infrared (1.2-1.6 mu m) luminescence in a ytterbium aluminium garnet (YbAG) crystal, doped with Cr (0.05 at.%) ions, was investigated under CW laser diode pumping (lambda = 940 nm). The Cr4+ emission band was observed with its peak at 1.34 mu m and measured to be about 1.3 times with respect to Yb3+ IR luminescence (lambda = 1.03 mu m). We demonstrate that for the excitation wavelength of 940 nm Yb3+ ions act as sensitizers of the B-3(2)(T-3(2))-B-3(1)((3)A(2)) emission of Cr4+ ions. This crystal is promising as a high-efficient system for tunable laser (1.2-1.6 mu m) output. (c) 2004 Elsevier B.V. All rights reserved.