Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser

Using effective-mass Hamiltonian model of semiconductors quantum well structures, we investigate the electronic structures of the Gamma-conduction and L-conduction subbands of GeSn/GeSiSn strained quantum well structure with an arbitrary composition. Our theoretical model suggests that the band structure could be widely modified to be type I, negative-gap or indirect-gap type II quantum well by changing the mole fraction of alpha-Sn and Si in the well and barrier layers, respectively. The optical gain spectrum in the type I quantum well system is calculated, taking into account the electrons leakage from the Gamma-valley to L-valley of the conduction band. We found that by increasing the mole fraction of alpha-Sn in the barrier layer and not in the well layer, an increase in the tensile strain effect can significantly enhance the transition probability, and a decrease in Si composition in the barrier layer, which lowers the band edge of Gamma-conduction subbands, also comes to a larger optical gain.

n-type Ge-SiGe quantum cascade structure utilizing quantum wells for electrons in the L and Gamma valleys

In this letter, we propose an n-type vertical transition bound-to-continuum Ge-SiGe quantum cascade structure utilizing electronic quantum wells in the L and F valleys of the Ge layers. The optical transition levels are located in the quantum wells in the L valley. Under a bias of 80 kV/cm, the carriers in the lower level are extracted by miniband transport and L - Gamma tunneling into the subband in the Gamma well of the next period. And then the electrons are injected into the upper level by ultrafast intervalley scattering, which not only effectively increases the tunneling rate and suppresses the thermal backfilling of electrons, but also enhances the injection efficiency of the upper level. The performance of the laser is discussed.

Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells

Photoluminescence (PL) of strained SiGe/Si multiple quantum wells (MQW) with flat and undulated SiGe well layers was studied at different temperature. With elevated temperature from 10K, the no-phonon (NP) peak of the SiGe layers in the flat sample has firstly a blue shift due to the dominant transition converting from bound excitons (BE) to free excitons (FE), and then has a red shift when the temperature is higher than 30K because of the narrowing of the band gap. In the undulated sample, however, monotonous blue shift was observed as the temperature was elevated from 10 K to 287 K. The thermally activated electrons, confined in Si due to type-II band alignment, leak into the SiGe crest regions, and the leakage is enhanced with the elevated temperature. It results in a blue shift of the SiGe luminescence spectra.

Electronic structure of diluted magnetic semiconductor superlattices: In-plane magnetic field effect

The electronic structure of diluted magnetic semiconductor (DMS) superlattices under an in-plane magnetic field is studied within the framework of the effective-mass theory; the strain effect is also included in the calculation. The numerical results show that an increase of the in-plane magnetic field renders the DMS superlattice from the direct band-gap system to the indirect band-gap system, and spatially separates the electron and the hole by changing the type-I band alignment to a type-II band alignment. The optical transition probability changes from type I to type II and back to type I like at large magnetic field. This phenomenon arises from the interplay among the superlattice potential profile, the external magnetic field, and the sp-d exchange interaction between the carriers and the magnetic ions. The shear strain induces a strong coupling of the light- and heavy-hole states and a transition of the hole ground states from "light"-hole to "heavy"-hole-like states.

Interband luminescence and absorption of GaNAs/GaAs single-quantum-well structures

We have investigated the interband electron transitions in a GaNAs/GaAs single quantum well (QW) by photoluminescence and absorption spectra. The experimental results show that the dominant photoluminescence at low temperature and high excitation intensity originates from transitions within the GaNAs layer. The interband transition energy for QWs with different well widths can be well fitted if a type-II band line up of GaNAs/GaAs QWs is assumed. (C) 2000 American Institute of Physics. [S0003-6951(00)03220-4].

Pressure dependence of the electronic subband structure of strained In0.2Ga0.8As/GaAs MQWs

We have measured low-temperature photoluminescence (PL) and optical absorption spectra of an In0.2Ga0.8As/GaAs multiple quantum well (MQW) structure at pressures up to 8 GPa. Below 4.9 GPa, PL shows only the emission of the n = 1 heavy-hole (HH) exciton. Three new X-related PL bands appear at higher pressures. They are assigned to spatially indirect (type-II) and direct (type-I) transitions from X(Z) states in GaAs and X(XY) valleys of InGaAs, respectively, to the HH subband of the wells. From the PL data we obtain a valence band offset of 80 meV for the strained In0.2Ga0.8As/GaAs MQW system. Absorption spectra show three features corresponding to direct exciton transitions in the quantum wells. In the pressure range of 4.5 to 5.5 GPa an additional pronounced feature is apparent in absorption, which is attributed to the pseudo-direct transition between a HH subband and the folded X(Z) states of the wells. This gives the first clear evidence for an enhanced strength of indirect optical transitions due to the breakdown of translational invariance at the heterointerfaces in MQWs.

Optical characterization of the Ge/Si (001) islands in multilayer structure

We show that the observed temperature dependence of the photoluminescence (PL) features can be consistently explained in terms of thermally activated carrier transfer processes in a multilayer structure of the self-organized Ge/Si(001) islands. The type II (electron confinement in Si) behavior of the Ge/Si islands is verified. With elevated temperature, the thermally activated electrons and holes enter the Ge islands from the Si and from the wetting layer (WL), respectively. An involvement of the type I (spatially direct) into type II (spatially indirect) recombination transition takes place at a high temperature.

Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells

Photoluminescence (PL) of strained SiGe/Si multiple quantum wells (MQW) with flat and undulated SiGe well layers was studied at different temperature. With elevated temperature from 10K, the no-phonon (NP) peak of the SiGe layers in the flat sample has firstly a blue shift due to the dominant transition converting from bound excitons (BE) to free excitons (FE), and then has a red shift when the temperature is higher than 30K because of the narrowing of the band gap. In the undulated sample, however, monotonous blue shift was observed as the temperature was elevated from 10 K to 287 K. The thermally activated electrons, confined in Si due to type-II band alignment, leak into the SiGe crest regions, and the leakage is enhanced with the elevated temperature. It results in a blue shift of the SiGe luminescence spectra.

An unusual electrochemically induced demetalation of iron-substituted Keggin-type undecatungstozincate ZnW11FeIII(H2O)O-39(7-)

Firstly reported for Fe-containing transition metal substituted polyoxometalates was an unusual Fe-centered demetalation process induced by the reduction of ZnW11FeIII to ZnW11FeII which resulted in a new couple of Fe-relating redox waves at positive potentials. (C) 1999 Elsevier Science S.A. All rights reserved.

Mineralogy of smectites in the surface sediments from the East Pacific and its significance

XRD, TEM, SEM and EDS are employed to analyze smectites in the clay fraction of the surface sediments from the East Pacific. It is shown from the XRD results that the clay fraction consists of about 20% smectites. Three types of smectites are identified, Fe-rich (Type I), Fe, Mg-rich (Type II) and Na,Ca smectite (Type III), and most of them are not well-crystallized. Type I is widely distributed in sediments, showing honeycomblike in the SEM, and aggregated or dispersive hairlike, or cloudy assemblage with a bit curl near its edge in the TEM. This type is considered to be typomorphic type of authigenic smectite in the East Pacific. Type II is similar to Type I in micromorphology in the TEM, showing a transition micronite, while Type III is tabletlike in the TEM with an unclear edge. Type I may be altered from volcanics and some of them even precipitated from the low subthermal water. Type II could also be formed in the ocean floor, while Type III comes from dry and distant continental area. This study suggests that the characteristic of chemical composition and morphology of smectite may give a clue to understand sediment source, origin of minerals and sedimentation in the deep sea.

高功率钕玻璃激光三倍频脉冲时间波形的研究

基于目前国内规模最大的激光驱动器——“神光Ⅱ”八路基频光已经实现功率平衡运行，通过改变其中若干路三倍频系统各调谐量的偏离，对输出三倍频波形进行束与束之间的横向对比研究．研究发现，对于Ⅱ类-Ⅱ类偏振失配三倍频系统，在影响转换效率的三个调谐量中，偏振分配角失配△θp，对三倍频波形影响最大；在入射基频功率密度约为1．0GW／cm^2情况下，当三倍频系统三个调谐量都处在最佳匹配时，三倍频波形半峰全宽τ最小。研究工作为最终实现“神光Ⅱ”八路光束三倍频功率平衡输出提供了晶体调试的方法。

利用晶体串接实现高效宽带三倍频

从耦合波方程出发,分别在小信号、高功率(1.5 GW/cm2)条件下研究KDP晶体串接三次谐波转换。当两块混频晶体的长度选择为8 mm和6 mm,晶体分别偏离原混频匹配角0.35 mrad和-0.25 mrad时可以有0.3 nm的谐波转换带宽,同时系统的三次谐波转换效率与两块混频晶体之间的距离有密切关系,当两块晶体之间的距离使从第一块混频晶体出射的光波之间的相位差改变π时,会使第一块混频晶体产生的三次谐波大部分回流到基频和倍频光,从而使转换效率大幅度下降,最合适的距离应当使光波之间的相位差改变为2π。

光谱相位相干技术测量飞秒脉冲的倍频误差

从理论上推导了第Ⅱ类相位匹配下宽带飞秒脉冲的二次谐波光场,分析输入飞秒脉冲的非共线相位匹配方式、脉冲带宽引起相位失配与群速失配对测量的影响。结果表明,为了消除飞秒脉冲的带宽影响,需要对测量记录的光强乘以一个调制因子;测量相位误差与非共线相位匹配的夹角和晶体长度成正比;相位失配与群速失配产生相位测量误差,且第Ⅱ类相位匹配方式下脉冲附加相位值较大;强度和相位误差需要在脉冲重建结果中补偿。

Recent origin of a hominoid-specific splice form of neuropsin, a gene involved in learning and memory

Neuropsin is a secreted-type serine protease involved in learning and memory. The type II splice form of neuropsin is abundantly expressed in the human brain but not in the mouse brain. We sequenced the type II-spliced region of neuropsin gene in humans and representative nonhuman primate species. Our comparative sequence analysis showed that only the hominoid species (humans and apes) have the intact open reading frame of the type II splice form, indicating that the type II neuropsin originated recently in the primate lineage about 18 MYA. Expression analysis using RT-PCR detected abundant expression of the type II form in the frontal lobe of the adult human brain, but no expression was detected in the brains of lesser apes and Old World monkeys, indicating that the type II form of neuropsin only became functional in recent time, and it might contribute to the progressive change of cognitive abilities during primate evolution.

A human-specific mutation leads to the origin of a novel splice form of neuropsin (KLK8), a gene involved in learning and memory

Neuropsin (kallikrein 8, ELKS) is a secreted-type serine protease preferentially expressed in the central nervous system and involved in learning and memory. Its splicing pattern is different in human and mouse, with the longer form (type II) only express