Nano-modification inside transparent materials by femtosecond laser single beam

Periodic nanostructures along the polarization direction of light are observed inside silica glasses and tellurium dioxide single crystal after irradiation by a focused single femtosecond laser beam. Backscattering electron images of the irradiated spot inside silica glass reveal a periodic structure of stripe-like regions of similar to 20 nm width with a low oxygen concentration. In the case of the tellurium dioxide single crystal, secondary electron images within the focal spot show the formation of a periodic structure of voids with 30 nm width. Oxygen defects in a silica glass and voids in a tellurium dioxide single crystal are aligned perpendicular to the laser polarization direction. These are the smallest nanostructures below the diffraction limit of light, which are formed inside transparent materials. The phenomenon is interpreted in terms of interference between the incident light field and the electric field of electron plasma wave generated in the bulk of material.

Diode-pumped Yb : GSO femtosecond laser

Compact femtosecond laser operation of Yb:Gd2SiO5 (Yb:GSO) crystal was demonstrated under high-brightness diode-end-pumping. A semiconductor saturable absorption mirror was used to start passive mode-locking. Stable mode-locking could be realized near the emission bands around 1031, 1048, and 1088 nm, respectively. The mode-locked Yb: GSO laser could be tuned from one stable mode-locking band to another with adjustable pulse durations in the range 1 similar to 100 ps by slightly aligning laser cavity to allow laser oscillations at different central wavelengths. A pair of SF10 prisms was inserted into the laser cavity to compensate for the group velocity dispersion. The mode-locked pulses centered at 1031 nm were compressed to 343 fs under a typical operation situation with a maximum output power of 396 mW. (c) 2007 Optical Society of America.

Comparison of femtosecond and nanosecond laser-induced damage in HfO2 single-layer film and HfO2-SiO2 high reflector

HfO2 single layers, 800 run high-reflective (HR) coating, and 1064 ran HR coating were prepared by electron-beam evaporation. The laser-induced damage thresholds (LIDTs) and damage morphologies of these samples were investigated with single-pulse femtosecond and nanosecond lasers. It is found that the LIDT of the HfO2 single layer is higher than the HfO2-SiO2 HR coating in the femtosecond regime, while the situation is opposite in the nanosecond regime. Different damage mechanisms are applied to study this phenomenon. Damage morphologies of all samples due to different laser irradiations are displayed. (c) 2007 Optical Society of America.

Effects of deposition rates on laser damage threshold of TiO2/SiO2 high reflectors

TiO2 single layers and TiO2/SiO2 high reflectors (HR) are prepared by electron beam evaporation at different TiO2 deposition rates. It is found that the changes of properties of TiO2 films with the increase of rate, such as the increase of refractive index and extinction coefficient and the decrease of physical thickness, lead to the spectrum shift and reflectivity bandwidth broadening of HR together with the increase of absorption and decrease of laser-induced damage threshold. The damages are found of different morphologies: a shallow pit to a seriously delaminated and deep crater, and the different amorphous-to-anatase-to-rutile phase transition processes detected by Raman study. The frequency shift of Raman vibration mode correlates with the strain in. film. Energy dispersive X-ray analysis reveals that impurities and non-stoichiometric defects are two absorption initiations resulting to the laser-induced transformation. (C) 2008 Elsevier B. V. All rights reserved.

Overall optimization of high-speed semiconductor laser modules

Based on the high frequency techniques such as frequency response measurement, equivalent circuit modeling and packaging parasitics compensation, a comprehensive optimization method for packaging high-speed semiconductor laser module is presented in this paper. The experiments show that the small-signal magnitude frequency response of the TO packaged laser module is superior to that of laser diode in frequencies, and the in-band flatness and the phase-frequency linearity are also improved significantly.

Electron beam and laser testing on the novel stripixel detectors

The novel Si stripixel detector, developed at BNL (Brookhaven National Laboratory), has been applied in the development of a prototype Si strip detector system for the PHENIX Upgrade at RHIC. The Si stripixel detector can generate X-Y two-dimensional (2D) position sensitivity with single-sided processing and readout. Test stripixel detectors with pitches of 85 and 560 mu m have been subjected to the electron beam test in a SEM set-up, and to the laser beam test in a lab test fixture with an X-Y-Z table for laser scanning. Test results have shown that the X and Y strips are well isolated from each other, and 2D position sensitivity has been well demonstrated in the novel stripixel detectors. (c) 2005 Elsevier B.V. All rights reserved.

Electrical and optical coupling in an electroabsorption modulator integrated with a DFB laser

Electrical and optical coupling in an electroabsorption (EA) modulator integrated with a distributed feedback (DFB) laser have been investigated. The integrated device is treated as a three-port optoelectronic device with two electrical ports and one optical output port. The scattering parameters of this three-port device have been measured in the designed experiment. The measured results indicate that there exists the electrical coupling between the DFB laser and EA modulator of the integrated light source whenever the current applied to the laser section is below or above the threshold current, and the optical coupling will have stronger influence on the frequency responses than the electrical coupling when the bias current is above the threshold. A small-signal equivalent circuit model for the integrated device is established considering both the electrical and internal optical coupling. Experiments show that the equivalent circuit model is reasonable and the determined element values are correct. Based on the measurement and modeling, the influences of the electrical and optical coupling on the high-frequency responses are investigated and the effective measure to eliminate the additional modulation in the DFB laser are discussed.

An ambient proof and wide tuning range LC VCO with automatic amplitude control for tuner applications

This paper represents a LC VCO with AAC (Auto Amplitude Control), in which PMOS FETs are used as active components, and the varactors are directly connected to ground to widen Kvco linear range. The AAC circuitry adds little noise to the VCO and provides it with robust performance over a wide temperature and carrier frequency range. The VCO is fabricated in 50-GHz 0.35-mu m SiGe BiCMOS process. The measurement results show that it has -127.27-dBc/Hz phase noise at 1-MHz offset and a linear gain of 32.4-MHz/V between 990-MHz and 1.14-GHz. The whole circuit draws 6.6-mA current from 5.0-V supply.

双模式相关技术研究与实现

文中研究的相关跟踪技术主要应用于飞航导弹的末制导。现阶段，激光制导技术、GPS制导技术、合成孔径雷达（SAR）制导技术在我国的实际应用还不成熟，传统的电视、红外制导技术仍然具有很强的生命力，因而，基于可见光的视频相关跟踪技术具有重要的研究价值。本文主要论述的两种相关算法是：多灰度点相关（MPC）、区域模板相关（RTC）。其中多点相关（MPC）算法的跟踪灵敏度高，定位精度好，硬件实现比较方便，实时性能好；区域模板相关算法（RTC），在图像的匹配过程中，不仅考虑了目标区域的灰度特征，而且兼顾了区域里多灰度层次的位置特征、面积特征，算法具有很好的鲁棒性。文中深入研究了两种相关跟踪算法，并针对它们在实际应用中的不足，提出了有效的改善措施。最后，本文对两种相关跟踪算法进行了初步融合，一是：通过粗匹配、精匹配过程来选取目标跟踪点；二是：提出了一种度量模板更新的能量准则函数。大量的仿真实验结果表明：改进后的两种相关跟踪技术可以较好地完成一些复杂背景下的目标跟踪任务，两种算法的有效结合又进一步提高了目标跟踪的稳定性能和可靠性能。本文研究的一些相关跟踪技术已经运用到实际工程项目中。

One-step heterogeneously catalytic oxidation of o-cresol by oxygen to salicylaldehyde

Salicylaldehyde (selectivity = 57.3% at a conversion = 73.8%) was prepared for the first time by the oxidation of o-cresol in a single step using impregnated CuCo/C catalysts.

脉冲激光导致不锈钢表层温度场演化的模拟

采用焓方法对Nd:YAG脉冲激光导致的不锈钢材料表面熔凝过程的温度场进行了数值模拟.在此基础上,结合材料的结晶动力学和快速凝固理论,对材料微结构演化的几个重要参数,包括凝固速率、冷却速度和界面温度梯度做了估算和讨论.

YAG激光毛化技术进展

二十世纪八十年代，当比利时冶金研究中心(CRM)开发出CO_2激光毛化冷轧辊技术后，尝试用YAG激光进行轧辊毛化一直吸引着众多的研究者，这是因为YAG(1.06μm)激光波长比CO_2(10.6μm)激光波长短一个量级，材料对YAG激光有更高的吸收率，并用YAG激光可以聚焦到更小的光斑尺寸，同时使用电信号驱动的声光开关技术便于对毛化分布进行可设定控制。但是用传统声光调制的YAG激光虽然可以碇以很高的脉冲频率(>30kHz)，但单脉冲有量仅为10mJ左右，难以达到辊面毛化粗糙度的要求，因此人们认为YAG激光用于毛化的主要困难是脉冲能量太小。

飞秒激光作用下全向高反膜破坏的激发过程

设计和制备了全向高反膜SiO2／TiO2，研究了它在不同脉冲宽度、不同脉冲能量的飞秒激光作用下的破坏阈值和烧蚀深度．利用发展的抽运．探针方法，研究了抽运脉冲作用下材料中导带电子的超快激发和能量沉积过程，建立并求解了飞秒激光激发材料和材料的激发对抽运光自身反作用的耦合动力学模型．模型较好地揭示了材料破坏的激发过程．