63 resultados para refraction


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In contrast to previous two-dimensional coated photonic crystals, in this paper we propose a left-handed one that is made of dielectric tubes arranged in a close-packed hexagonal lattice. Without metallic cores, this structure is low-loss and convenient to fabricate. Negative refraction and its resulting focusing are investigated by dispersion characteristic analysis and numerical simulation of the field pattern. With proper modification at the interface, the image is improved. With better isotropy than that with noncircular rods, planoconcave lenses made by dielectric tubes focus a Gaussian beam exactly at R//n - 1/.

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As distinct from coated photonic crystals, in this paper we propose a novel one that is made of dielectric tubes arranged in a close-packet square lattice. Without metallic cores, this structure is low-loss and convenient to fabricate. A left-handed frequency region is found in the second band by dispersion characteristic analysis. Without inactive modes for the transverse electric mode, negative refraction and subwavelength imaging are demonstrated by the finite-difference time-domain simulations with two symmetrical interfaces, i.e. Gamma X and Gamma M.

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固体热容激光器(SSHCL)作为高功率固体激光器的一个重要发展方向,引起人们广泛关注。数值模拟激光介质板条在热容方式下工作的温度和应力分布是了解该类激光器工作特性的一种有效手段,采用平面应力近似法导出了半导体激光器抽运热容激光介质板的二维温度和应力分布公式,同时也对二维抽运光吸收密度、介质板温度分布和折射率变化进行了分析与讨论。数值计算的结果表明二维效应的温度分布和应力分布要比一维效应给出的分布更均匀。

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高平均功率固体激光器的增益介质由于受热而容易发生畸变,如常用材料YAG,波前畸变和去偏振现象会同时发生,高热负载固体激光介质的热效应已成为制约激光器输出功率进一步提高的严重障碍。给出一种计算热容型板条激光器热感生折射率的方法。把YAG晶体的四阶压光张量从晶胞坐标系转换到实验室坐标系,采用经过坐标转换后的新的张量,可以分析在YAG激光器中任意应力分布引起的热感应双折射。进一步的计算表明,在zigzag板条激光器中,应力双折射率与板条从晶体毛胚上切割成材的角度有关。同时也对热容板条激光器的热效应和应力特性进行了二维的理论性概述。

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Recent theoretical and experimental results suggested that the silver superlens could be constructed through controlling silver thin film thickness and preparation conditions, and applied in subdiffraction-limited optical imaging and optical lithography. In this work, we report another significant application of silver superlens-ultrahigh density optical data storage. With the silver superlens the subdiffraction-limited pit arrays on an optical disk are dynamically read out and the carrier-to-noise ratio can reach 25 dB for the thin film thickness of 46 nm. The readout laser power and readout velocity have little effect on the carrier-to-noise ratio. Additionally, in our experiment the silver thin film thickness needs to be controlled in the range from 20 to 80 nm.

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In laser applications, the size of the focus spot can be reduced beyond the diffraction limit with a thin film of strong nonlinear optical Kerr effect. We present a concise theoretical simulation of the device. The origin of the super-resolution is found to be mainly from the reshaping effect due to the strongly nonlinear refraction mediated multi-interference inside the thin film. In addition, both diffraction and self-focusing effects have been explored and found negligible for highly refractive and ultrathin films in comparison with the reshaping effect. Finally, the theoretic model has been verified in experiments with single Ge2Sb2Te5 film and SiN/Si/SiN/Ge2Sb2Te2 multilayer structures. (c) 2006 American Institute of Physics.

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The high-density holographic recording parameters of a novel two dyes-sensitized photopolymer under different exposure wavelengths are studied. The results show that the maximum diffraction efficiency, exposure sensitivity, maximum refraction index modulation, dynamic range, and the exposure time constant increases with the increase of the exposure wavelength. The analysis indicates that the scattering has an important role in the forming of the holographic grating. (c) 2005 Elsevier GmbH. All rights reserved.

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Within the framework of classic electromagnetic theories, we have studied the sign of refractive index of optical medias with the emphases on the roles of the electric and magnetic losses and gains. Starting from the Maxwell equations for an isotropic and homogeneous media, we have derived the general form of the complex refractive index and its relation with the complex electric permittivity and magnetic permeability, i.e. n = root epsilon mu, in which the intrinsic electric and magnetic losses and gains are included as the imaginary parts of the complex permittivity and permeability, respectively, as epsilon = epsilon(r) + i(epsilon i) and mu = mu(r) + i mu(i). The electric and magnetic losses are present in all passive materials, which correspond, respectively, to the positive imaginary permittivity and permeability epsilon(i) > 0 and mu(i) > 0. The electric and magnetic gains are present in materials where external pumping sources enable the light to be amplified instead of attenuated, which correspond, respectively, to the negative imaginary permittivity and permeability epsilon(i) < 0 and mu(i) < 0. We have analyzed and determined uniquely the sign of the refractive index, for all possible combinations of the four parameters epsilon(r), mu(r), epsilon(i), and mu(i), in light of the relativistic causality. A causal solution requires that the wave impedance be positive Re {Z} > 0. We illustrate the results for all cases in tables of the sign of refractive index. One of the most important messages from the sign tables is that, apart from the well-known case where simultaneously epsilon < 0 and mu < 0, there are other possibilities for the refractive index to be negative n < 0, for example, for epsilon(r) < 0, mu(r) > 0, epsilon(i) > 0, and mu(i) > 0, the refractive index is negative n < 0 provided mu(i)/epsilon(i) > mu(r)/vertical bar epsilon(r)vertical bar. (c) 2006 Elsevier B.V. All rights reserved.

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In general, the propagating behavior of extraordinary wave in anisotropic materials is different from that in isotropic materials. With the tangential continuity of Maxwell's equations, the electromagnetic propagating behaviors have been investigated at the incident and exit interfaces of the uniaxial anisotropic thin film. The emphasis was placed on two interesting optical phenomena such as homolateral refraction behavior and wide-angle Brewster's phenomenon, which occurred at the interfaces of uniaxial anisotropic thin film.

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采用电子束直接蒸发氧化铪、无辅助电子束反应蒸发和离子束辅助反应蒸发金属铪3种沉积方式制备了单层HfO2薄膜,对样品的光学性能、结构特性以及激光损伤特性进行了研究。实验结果表明:通过反应沉积的方法可以有效减少缺陷产生并改善均匀性,施加离子辅助可以提高薄膜的折射率,在一定条件下还可以有效地降低吸收,但激光损伤阈值仍未达到直接采用氧化铪制备的水平;晶体结构方面,离子辅助条件下可以获得单斜相氧化铪薄膜,并且随着轰击能量的提高由(002)面的择优取向向(-111)面转变。

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The third-order optical nonlinear refractive properties of InAs/GaAs quantum dots grown by molecular beam epitaxy have been measured using the reflection Z-scan technique at above-bandgap energy. The nonlinear refractive index and nonlinear absorption index of the InAs/GaAs quantum dots were determined for wavelengths from 740 to 777 nm. The measured results are compared with the nonlinear refractive response of several typical III-V group semiconductor materials. The corresponding mechanisms responsible for the large nonlinear response are discussed.

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The refractive nonlinearities of InAs/GaAs quantum dots under a dc electric field at photon energies above its band gap energy have been studied using the reflection Z-scan technique. The effect of the dc electric field on the nonlinear response of InAs/GaAs quantum dots showed similar linear and quadratic electro-optic effects as in the linear response regime at low fields. This implies that the electro-optic effect in the nonlinear regime is analogous to the response in the linear regime for semiconductor quantum dots. Our experimental results show the potential for voltage tunability in InAs quantum dot-based nonlinear electro-optic devices.

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Based on our experimental research on diphasic silicon films, the parameters such as absorption coefficient, mobility lifetime product and bandgap were estimated by means of effective-medium theory. And then computer simulation of a-Si: H/mu c-Si: H diphasic thin film solar cells was performed. It was shown that the more crystalline fraction in the diphasic silicon films, the higher short circuit density, the lower open-circuit voltage and the lower efficiency. From the spectral response, we can see that the response in long wave region was improved significantly with increasing crystalline fraction in the silicon films. Taking Lambertian back refraction into account, the diphasic silicon films with 40%-50% crystalline fraction was considered to be the best intrinsic layer for the bottom solar cell in micromorph tandem.

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It was theoretically predicted that when a beam of light travels through a thin slab of optically denser medium in the air, the emerging beam from the slab will suffer a lateral displacement that is different from the prediction of geometrical optics, that is, the Snell's law of refraction and can be zero and negative as well as positive. These phenomena have been directly observed in microwave experiments in which large angles of incidence are chosen for the purpose of obtaining negative lateral displacements. (C) 2005 Elsevier B.V. All rights reserved.

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It is found that when a light beam travels through a slab of optically denser dielectric medium in air, the lateral shift of the transmitted beam can be negative. This is a novel phenomenon that is reversed in comparison with the geometrical optic prediction according to Snell's law of refraction. A Gaussian-shaped beam is analyzed in the paraxial approximation, and a comparison with numerical simulations is made. Finally, an explanation for the negativity of the lateral shift is suggested, in terms of the interaction of boundary effects of the slab's two interfaces with air.