Computer simulation of a-Si : H/mu c-Si : H diphasic silicon solar cells


Autoria(s): Hao HY; Kong GL; Zeng XB; Xu Y; Diao HW; Liao XB
Data(s)

2005

Resumo

Based on our experimental research on diphasic silicon films, the parameters such as absorption coefficient, mobility lifetime product and bandgap were estimated by means of effective-medium theory. And then computer simulation of a-Si: H/mu c-Si: H diphasic thin film solar cells was performed. It was shown that the more crystalline fraction in the diphasic silicon films, the higher short circuit density, the lower open-circuit voltage and the lower efficiency. From the spectral response, we can see that the response in long wave region was improved significantly with increasing crystalline fraction in the silicon films. Taking Lambertian back refraction into account, the diphasic silicon films with 40%-50% crystalline fraction was considered to be the best intrinsic layer for the bottom solar cell in micromorph tandem.

Identificador

http://ir.semi.ac.cn/handle/172111/8666

http://www.irgrid.ac.cn/handle/1471x/63863

Idioma(s)

中文

Fonte

Hao, HY; Kong, GL; Zeng, XB; Xu, Y; Diao, HW; Liao, XB .Computer simulation of a-Si : H/mu c-Si : H diphasic silicon solar cells ,ACTA PHYSICA SINICA,JUL 2005,54 (7):3370-3374

Palavras-Chave #半导体材料 #diphasic silicon films
Tipo

期刊论文