Material response and failure mechanism of unidirectional metal matrix composites under impulsive shear loading

The material response and failure mechanism of unidirectional metal matrix composite under impulsive shear loading are investigated in this paper. Both experimental and analytical studies were performed. The shear strength of unidirectional C-f/A356.0 composite and A356.0 aluminum alloy at high strain rate were measured with a modified split Hopkinson torsional bar technique. The results indicated that the carbon fibers did not improve the shear strength of aluminum matrix if the fiber orientation aligned with the shear loading axis. The microscopic inspection of the fractured surface showed a multi-scale zigzag feature which implied a complicated shear failure mechanism in the composite. In addition to testing, the micromechanical stress field in the composite was analyzed by the generalized Eshelby equivalent method (GEEM). The influence of cracking in matrix on the micromechanical stress field was investigated as well. The results showed that the stress distribution in the composite is quite nonhomogeneous and very high shear stress concentrations are found in some regions in the matrix. The high shear stress concentration in the matrix induces tensile cracking at 45 degrees to the shear direction. This in turn aggravates the stress concentration at the fiber/matrix interface and finally leads to a catastrophic failure in the composite. From the correlation between the analysis and experimental results, the shear failure mechanism of unidirectional C-f/A356.0 composite can be elucidated qualitatively.

Implication of scaling hierarchy associated with nonequilibrium: field and particulate

The advent of nanotechnology has necessitated a better understanding of how material microstructure changes at the atomic level would affect the macroscopic properties that control the performance. Such a challenge has uncovered many phenomena that were not previously understood and taken for granted. Among them are the basic foundation of dislocation theories which are now known to be inadequate. Simplifying assumptions invoked at the macroscale may not be applicable at the micro- and/or nanoscale. There are implications of scaling hierrachy associated with in-homegeneity and nonequilibrium. of physical systems. What is taken to be homogeneous and equilibrium at the macroscale may not be so when the physical size of the material is reduced to microns. These fundamental issues cannot be dispensed at will for the sake of convenience because they could alter the outcome of predictions. Even more unsatisfying is the lack of consistency in modeling physical systems. This could translate to the inability for identifying the relevant manufacturing parameters and rendering the end product unpractical because of high cost. Advanced composite and ceramic materials are cases in point. Discussed are potential pitfalls for applying models at both the atomic and continuum levels. No encouragement is made to unravel the truth of nature. Let it be partiuclates, a smooth continuum or a combination of both. The present trend of development in scaling tends to seek for different characteristic lengths of material microstructures with or without the influence of time effects. Much will be learned from atomistic simulation models to show how results could differ as boundary conditions and scales are changed. Quantum mechanics, continuum and cosmological models provide evidence that no general approach is in sight. Of immediate interest is perhaps the establishment of greater precision in terminology so as to better communicate results involving multiscale physical events.

On the influence zone and the prediction of tensile strength of particulate polymeric composites

An intended numerical investigation is carried out. The results indicate that, even if a perfect adhesive bond is preserved between the particles and matrix materials, the two-phase element cell model is unable to predict the strength increment of the particulate polymeric composites (PPC). To explore the main reinforcing mechanism, additional microscopic experiment is performed. An ''influence zone'' was observed around each particle which is measured about 2 to 10 micrometers in thickness for a glass-polyethylene mixture. Then, an improved computational model is presented to include the ''influence zone'' effect and several mechanical behaviors of PPC are well simulated through this new model.

Effects of Thermocapillary Convection on the Growth Process in Industrial 8-inch Silicon Czochralski Growth

Czochralski (CZ) crystal growth process is a widely used technique in manufacturing of silicon crystals and other semiconductor materials. The ultimate goal of the IC industry is to have the highest quality substrates, which are free of point defect, impurities and micro defect clusters. The scale up of silicon wafer size from 200 mm to 300 mm requires large crucible size and more heat power. Transport phenomena in crystal growth processes are quite complex due to melt and gas flows that may be oscillatory and/or turbulent, coupled convection and radiation, impurities and dopant distributions, unsteady kinetics of the growth process, melt crystal interface dynamics, free surface and meniscus, stoichiometry in the case of compound materials. A global model has been developed to simulate the temperature distribution and melt flow in an 8-inch system. The present program features the fluid convection, magnetohydrodynamics, and radiation models. A multi-zone method is used to divide the Cz system into different zones, e.g., the melt, the crystal and the hot zone. For calculation of temperature distribution, the whole system inside the stainless chamber is considered. For the convective flow, only the melt is considered. The widely used zonal method divides the surface of the radiation enclosure into a number of zones, which has a uniform distribution of temperature, radiative properties and composition. The integro-differential equations for the radiative heat transfer are solved using the matrix inversion technique. The zonal method for radiative heat transfer is used in the growth chamber, which is confined by crystal surface, melt surface, heat shield, and pull chamber. Free surface and crystal/melt interface are tracked using adaptive grid generation. The competition between the thermocapillary convection induced by non-uniform temperature distributions on the free surface and the forced convection by the rotation of the crystal determines the interface shape, dopant distribution, and striation pattern. The temperature gradients on the free surface are influenced by the effects of the thermocapillary force on the free surface and the rotation of the crystal and the crucible.

Long-Term Evolution Of Delayed Ettringite And Gypsum In Portland Cement Mortars Under Sulfate Erosion

The magnitude evolution of ettringite and gypsum in hydrated Portland cement mortars due to sulfate attack was detected by X-ray powder diffraction. The influences of sulfate concentration and water-to-cement ratio on the evolution of ettringite and gypsum were investigated. Experimental results show that the magnitude of ettringite formation in sodium sulfate solution follows a three-stage process, namely, the 'penetration period', 'enhance period of strength', and 'macro-crack period'. The cracking of concrete materials is mainly attributed to the effect of ettringite. The gypsum formations occurred in two stages, the 'latent period' and the 'accelerated period'. The gypsum formation including ettringite formation was relative to the linear expansion of mortars to some extend. Both water-to-cement ratio and sulfate concentration play important roles in the evolution of ettringite and gypsum. (C) 2008 Elsevier Ltd. All rights reserved.

不同烧蚀条件下飞秒激光脉冲诱导ZnO纳米结构研究

烧蚀条件对飞秒激光脉冲诱导氧化锌纳米结构有重要影响。研究了800nm,150fs,250kHz的飞秒激光脉冲分别在空气中,去离子水中以及无水乙醇中垂直聚焦于氧化锌晶体表面,诱导形成不同形态的纳米结构。实验结果表明,在空气中利用飞秒激光脉冲辐照样品表面,形成了周期为180nm的纳米线;在去离子水中辐照诱导形成了由氧化锌纳米线聚集而成的"纳米球";在无水乙醇中形成出现分叉结构的纳米线。拉曼光谱分析辐照前后晶体晶相结果表明,形成的纳米结构相对于辐照前特征峰437cm-1强度有所下降,在570cm-1处的峰值则显著增强。分析了在各种烧蚀条件下诱导形成纳米结构的演化过程以及物理机理。

The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy

The third-order optical nonlinear refractive properties of InAs/GaAs quantum dots grown by molecular beam epitaxy have been measured using the reflection Z-scan technique at above-bandgap energy. The nonlinear refractive index and nonlinear absorption index of the InAs/GaAs quantum dots were determined for wavelengths from 740 to 777 nm. The measured results are compared with the nonlinear refractive response of several typical III-V group semiconductor materials. The corresponding mechanisms responsible for the large nonlinear response are discussed.

Optical response of high-level bandgap in one-dimensional photonic crystal applying in-plane integration

A new broadband filter, based on the high level bandgap in 1-D photonic crystals (PCs) of the form Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si is designed by the plane wave expansion method (PWEM) and the transfer matrix method (TMM) and fabricated by lithography. The optical response of this filter to normal-incident and oblique-incident light proves that utilizing the high-level bandgaps of PCs is an efficient method to lower the difficulties of fabricating PCs, increase the etching depth of semiconductor materials, and reduce the coupling loss at the interface between optical fibers and the PC device. (c) 2007 Society of Photo-Optical Instrumentation Engineers.

Optical response of high-order band gap photonic crystal applying in-plane in one-dimensional integration

A new broadband filter, based on the high-order band gap in one-dimensional photonic crystal (PCs) of the form Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si, has been designed by the plane wave expansion method (PWEM) and transfer matrix method (TMM) and fabricated by lithography. The optical response of this filter to normal-incident and oblique-incident light proves that utilizing the high-order band gaps of PCs is an efficient method to lower the difficulties of fabricating PCs, increase the etching depth of semiconductor materials, and reduce the coupling loss at the interface between optical fibers and PC device. (c) 2007 Elsevier B.V. All rights reserved.

Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence

Undoped GaSb was irradiated by 2.6 MeV protons. The irradiation-induced defects were studied by positron lifetime spectroscopy (PLS) and photoluminescence (PL). Positron lifetime measurements showed that vacancy-type defects were introduced after irradiation, and divacancies were formed at higher irradiation dose. Annealing experiments revealed there were different annealing steps between the as grown and proton-irradiated samples, the reason for which was tentatively attributed to the formation of divacancies in the proton-irradiated samples during annealing. All the vacancy defects could be annealed out at around 500 degrees C. The PL intensity quickly fell down after proton irradiation and decreased with increasing irradiation dose, indicating that irradiation induced non-irradiative recombination centers, whose candidates were assigned to the vacancy defects induced by proton irradiation.

Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy

In2O3 is a promising partner of InN to form InN/In2O3 heterosystems. The valence band offset (VBO) of wurtzite InN/cubic In2O3 heterojunction is determined by x-ray photoemission spectroscopy. The valence band of In2O3 is found to be 1.47 +/- 0.11 eV below that of InN, and a type-I heterojunction with a conduction band offset (CBO) of 0.49-0.99 eV is found. The accurate determination of the VBO and CBO is important for use of InN/In2O3 based electronic devices.

Chemical liquid phase deposition of thin aluminum oxide films

Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as precursors for film growth, and the control of the system's pH value played an important role in this experiment. The growth rate is 12 nm/h with the deposition at [Al-2(SO4)(3)]=0.0837 mol.L-1, [NaHCO3]=0.214 mol.L-1, 15 degreesC. Post-growth annealing not only densifies and purifies the films, but results in film crystallization as well. Excellent quality of Al2O3 films in this work is supported by electron dispersion spectroscopy, Fourier transform infrared spectrum, X-ray diffraction spectrum and scanning electron microscopy photograph.

Magnetic ordering and irreversible magnetization between ZFC and FC states in RCo5Ga7 compounds

The magnetic properties of RCo5Ga7 (R = Y, Tb, Dy, Ho and Er) compounds which crystallize in the ScFe6Ga6-type structure have been studied. The compounds with R, Y, Tb, Dy, Ho and Er display behaviour similar to semiconductors. The Co transition metal sublattice is ferrimagnetic with a very low spontaneous magnetization. The ferrimagnetic ordering observed for R = Y, Tb, Dy, Ho and Er is due to the transition metal sublattice with transition temperatures at about 295 K. At low temperatures, the magnetic ordering for R Tb, Dy, Ho and Er is due to the rare-earth sublattice, which is ferromagnetic with a Curie temperature below 5 K. By fitting the linear part of the inverse magnetization, the effective magnetic moment of the R ion is found to be close to its expected theoretical value, with paramagnetic Curie temperatures below 5 K. Due to the paramagnetic nature of the R sublattice above 60 K, the ferrimagnetic ordering temperature of the Co sublattice does not vary with the type of rare-earth ion. The irreversibility of the magnetization of YCo5Ga7, as measured in zero-field cooled (ZFC) and field cooled (FC) states, is attributed to movement of domain walls. Application of a large enough applied field completes the movement of the domain wall from the low-temperature to the high-temperature one at 5 K. With a very low magnetic field 100 Oe, the difference between the ZFC and the FC shrinks. (C) 2004 Elsevier B.V. All rights reserved.

Theoretical investigation on the phase stability of Nd2Fe14B and site preference of V, Cr, Mn, Zr and Nb

The stability of the excellent permanent magnetic compound Nd2Fe14B and substitution of Fe in the compound by V, Cr, Mn, Zr and Nb are investigated by using interatomic pair potentials which are converted from lattice-inversion method. Calculation shows that the substitution always makes the cell volume larger, and the increase of the volume is almost linear with substituent concentration. The calculated cohesive energy shows that the preferential order of substitution of Fe is Nb, V, Cr, Mn, Zr. Nevertheless, all the five substituting elements should most preferentially replace Fe in the j(2)' site, which has the greatest space among all six Fe sites. (C) 2005 Elsevier B.V. All rights reserved.

Optical properties of the E-0+Delta(0) energy level higher than the bandgap of GaAs studied by micro-photoluminescence technique

Using micro-photoluminescence technique, we observed a new photoluminescence peak about 0.348 eV above the bandgap of GaAs (E-0). By analyzing its optical characteristics, we assigned this peak to the nonequilibrium luminescence emission from the E-0 + Delta(0) bandgap in semi-insulated GaAs, which was further verified by Raman results. The observed polarization, excitation power dependence and temperature dependence of the photoluminescence spectra from the E-0 + Delta(0) energy level were very similar to those from the E-0 of GaAs. This mainly resulted from the common conduction band around Gamma(6) that was involved in the two optical transition processes, and indicated that the optical properties of bulk GaAs were mainly determined by the intrinsic properties of the conduction band. Our results demonstrated that the micro-photoluminescence technique is a powerful tool to investigate the high energy states above the fundamental bandgap in semiconductor materials.