Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence


Autoria(s): Li H; Wang Z; Zhou K; Pang JB; Ke JY; Zhao YW
Data(s)

2009

Resumo

Undoped GaSb was irradiated by 2.6 MeV protons. The irradiation-induced defects were studied by positron lifetime spectroscopy (PLS) and photoluminescence (PL). Positron lifetime measurements showed that vacancy-type defects were introduced after irradiation, and divacancies were formed at higher irradiation dose. Annealing experiments revealed there were different annealing steps between the as grown and proton-irradiated samples, the reason for which was tentatively attributed to the formation of divacancies in the proton-irradiated samples during annealing. All the vacancy defects could be annealed out at around 500 degrees C. The PL intensity quickly fell down after proton irradiation and decreased with increasing irradiation dose, indicating that irradiation induced non-irradiative recombination centers, whose candidates were assigned to the vacancy defects induced by proton irradiation.

Natural Science Foundation of China 10775107 This work was supported by the Natural Science Foundation of China under Grant No. 10775107

Identificador

http://ir.semi.ac.cn/handle/172111/6991

http://www.irgrid.ac.cn/handle/1471x/63233

Idioma(s)

英语

Fonte

Li H ; Wang Z ; Zhou K ; Pang JB ; Ke JY ; Zhao YW .Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence ,JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,2009 ,11(8):1122-1126

Palavras-Chave #半导体材料 #GaSb #Proton irradiation #Defects #Positron lifetime #Photoluminescence
Tipo

期刊论文