Laser-induced changes on the complex refractive indices of phase-change thin film

The refractive indices of crystalline phase-change films are usually obtained by thermal-induced crystallization. However, this is not accurate, because the crystallization of phase-change film in rewritable optical disks is laser induced. In this study, we use the initializer to crystallize the phase-change films. The dependence of the refractive index n and the extinction coefficient k of the phase-change films on the initialization conditions are studied. Remarkable changes of the refractive indices (especially k) are found when the initialization laser power density is 6.63 mW/mum(2) and the initialization velocity is 4.0 m/s. At the same time, the structure changes of the phase-change films are also studied. This dependence is explained by the structure change of the films. These results are significant in improving the accuracy of optical design and the thermal simulation of phase-change optical disks, as well as in the study of phase-change optical disks at shorter wavelengths. (C) 2003 Society of Photo-Optical Instrumentation Engineers.

Riboflavin sensitized photopolymer materials for holographic storage

Riboflavin is employed as the photosensitizer of a novel photopolyrner material for holographic recording, This material has a broad absorption spectrum range (More than 200nm) due to the addition of this dye. The experimental results show that our material has high diffraction efficiency and large refractive index modulation. The maximum diffraction efficiency of the photopolymer is about 56%. The digital data pages are stored in this medium and the reconstructed data page has a good fidelity, with the bit-error-ratio of about 1.8 X 10(-4). it is found that the photopolymer material is suitable for high-density volume holographic digital storage.

Temperature characteristics of optical parameters of phthalocyanine LB films and spin-coated films

The LB films and spin-coated films of tetra-neopentoxy phthalocyanine zinc (TNPPcZn) were prepared and annealed at different temperatures. Their refractive index (n) and extinction coefficient (k) were measured by p-polarized reflectance. The similar value of n and k, as well as similar changing tendency of it and k at varied annealing temperatures, was found between LB films and spin-coated films. In addition, the absorption curves of TNPPcZn LB films and spin-coated films in visible range at different annealing temperature were investigated. The results indicate that the changing tendency of the extinction coefficient of two kinds of TNPPcZn films obtained from two methods mentioned above were coincident. When the annealing temperature increased to 150 degrees C, the monomers of TNPPcZn films transformed to aggregates, n(f) and k(f) of the films increased. Further, n(f) and k(f) decreased as aggregates changed back to monomers again at the annealing temperature of 300 degrees C. The experimental results coincide well with the theoretical analysis. (C) 2004 Elsevier B.V. All rights reserved.

Stability against crystallization and spectroscopic properties of Tm3+ doped fluorophosphate glasses

Fluorophosphate glasses with various content of Al(PO3)(3) were prepared. With the increment of Al(PO3)(3) content, density decreases while refractive index increases, and transition temperature, crystallization peak temperature and melt temperature increase which were suggested by differential scanning calorimetry. These glasses exhibit the best stability against crystallization with 7-9 mol'Yo Al(PO3)(3) content. Normalized Raman spectra were used to analyze structure and phonon state. The increment of Al(PO3)(3) content does not affect phonon energy but results in the augment of phonon density. Absorption spectra were measured. H-3(6) -> F-3(4) transition exhibits absorption at L band of the third communication window. Compared with the energy of Tm3+ excited states in other glass system, F-3(4) energy of Tm3+ in these glasses is considerable higher and H-3(4) energy is considerable lower, and it can be predicted that emission band of H-3(4) -> F-3(4) transition is close to the amplified band of gain-shift Tm3+ doped fiber amplifier. Analyses of Judd-Ofelt theory suggest when Al(PO3)(3) content is no more than 7 mol%, Judd-Ofelt parameters Omega(t) and the lifetime of H-3(4) energy level of TM3+ vary little with the increment of Al(PO3)(3) content, and when Al(PO3)(3) content is more than 7 mol%, Omega(2) and Omega(6) increase and radiative lifetime of H-3(4) energy level of Tm3+ drops sharply with the increment of Al(PO3)(3) content. (c) 2006 Elsevier B.V. All rights reserved.

氧分压对ZrO2薄膜激光损伤阈值的影响

在不同的氧分压下用电子束热蒸发的方法制备了ZrO2薄膜。分别通过X射线衍射、光学光谱、热透镜技术、抗激光辐照等测试，对所制备样品的微结构、折射率、吸收率及激光损伤阈值进行了测量。实验结果表明，薄膜中晶粒主要是四方相为主的多晶结构，并且随着氧分压的增加，结晶度、折射率以及弱吸收均逐渐降低。薄膜的激光损伤阈值开始随着氧分压增加从18．5J／cm^2逐渐增加，氧分压为9×10^-3Pa时达到最大，值为26．7J／cm^2，氧分压再增加时则又降低到17．5J／cm^2。由此可见，氧分压引起的薄膜微结构变化是ZrO

斜角入射沉积法制备渐变折射率薄膜的理论探讨

从理论上分析了单一膜料倾斜入射沉积时的折射率与填充密度的关系，给出了三种不同的表达式；然后从正变和负变、完整周期和存在半周期以及不同的周期数等几个方面探讨了膜层的填充密度按照线性变化时的渐变折射率薄膜的光学特性，并将折射率的不同理论表达式对光学特性的影响进行了对比，最后讨论了单一膜料倾斜入射沉积渐变折射率薄膜的方法、填充密度线性变化时的渐变折射率薄膜的应用及制备中需要进一步解决和处理的问题．

磁控反应溅射法制备渐变折射率薄膜的模型分析

阐述了磁控反应溅射法制备渐变折射率薄膜的机理；探讨了磁控反应溅射法制备渐变折射率薄膜的理论模型，给出了渐变折射率薄膜的折射率与反应气体分压的关系，在一定的沉积参数下，由要得到的膜层折射率随膜层几何厚度的变化规律可推导出反应气体分压比随时间的变化规律；最后以制备折射率线性变化的薄膜为例说明了如何推导得到反应气体分压比随时间的变化规律．

光学薄膜中界面层和表面吸附层对相位延迟的影响

多层介质反射镜在非正入射的时候，两个不同的偏振态之间会产生不同的相移．根据空气与膜层、膜层之间的实际情况，建立了界面层和表面吸附层模型，并运用它分析相位延迟产生误差的原因．通过优化设计，入射角为54°，在1285～1345nm之间p，s波获得了270±1°的相移，同时也使反射率在99．5％以上．用离子束溅射技术制备相位延迟膜，用分光光度计测试了光谱特性和用椭偏仪测试了相位特性，在相应波段获得了262．4±1．8°的相移，同时也使反射率在99．6％以上．误差的主要来源是离子源工作特性会产生不均匀的过渡层和最

氧碘激光器相位延迟片的制备与性能研究

多层介质反射镜在非正入射的时候，两个不同的偏振态之间会产生不同的相移。利用矩阵法，根据菲涅耳公式和电磁场边界条件，推导出p，s波的相移。通过优化设计．入射角为54°，在1285～1345nm之间p，s波获得了270°±1°的相移，同时也使反射率在99．5％以上。用离子束溅射技术制备相位延迟膜，用分光光度计测试了光谱特性和用椭偏仪测试了相位特性，在相应波段获得了262．4°±1．8°的相移，同时也使反射率在99．6％以上。误差的主要来源是离子源工作特性会产生不均匀的过渡层和最外层会吸收一些水气、灰尘等也产生

反射式相位延迟器的性能研究

多层介质反射镜在非正入射的时候，两个不同的偏振态之间会产生不同的相移。通过优化设计，入射角为45°，在1285～1345nm之间p，s波获得了270°±0．15°的相移和99．5％以上的反射率。对使用的膜系进行了每层光学厚度的误差分析。用离子柬溅射技术制备相位延迟膜，在大气中对样品进行不同温度的退火，用分光光度计测试了光谱特性和用椭偏仪测试了相位特性。结果表明，未退火的样品在相应波段获得了267．5°±0．5°的相移和99．6％以上的反射率；根据拟合分析，最外层的误差和折射率与设计值的偏差是发生相移偏小的

渐变折射率薄膜的分层评价探讨

首先阐述了将渐变折射率薄膜细分为多层均匀薄膜的分层介质理论，接着给出了一种获得最佳分层数目的分层评价方法，最后以线性变化渐变折射率薄膜为例说明了如何优化获得渐变折射率薄膜的分层数目．研究发现：渐变折射率薄膜的分层数目与薄膜的厚度和薄膜的折射率变化快慢有关，在一定的折射率变化范围内，渐变折射率薄膜的分层数目随着薄膜厚度的增加先减小后增大．

4H-SiC基底Al_2O_3/SiO_2双层减反射膜的设计和制备

在4H-SiC基底上设计并制备了Al2O3/SiO2紫外双层减反射膜,通过扫描电镜(SEM)和实测反射率谱来验证理论设计的正确性。利用编程计算得到Al2O3和SiO2的最优物理膜厚分别为42.0nm和96.1nm以及参考波长λ=280nm处最小反射率为0.09%。由误差分析可知,实际镀膜时保持双层膜厚度之和与理论值一致有利于降低膜系反射率。实验中应当准确控制SiO2折射率并使Al2O3折射率接近1.715。用电子束蒸发法在4H-SiC基底上淀积Al2O3/SiO2双层膜,厚度分别为42nm和96nm。SEM截面图表明淀积的薄膜和基底间具有较强的附着力。实测反射率极小值为0.33%,对应λ=276nm,与理论结果吻合较好。与传统SiO2单层膜相比,Al2O3/SiO2双层膜具有反射率小,波长选择性好等优点,从而论证了其在4H-SiC基紫外光电器件减反射膜上具有较好的应用前景。

低损耗193nm反射膜的设计

采用1/4规整膜系,从电场强度、吸收损耗及散射损耗的分布几个方面,对影响193 nm反射膜性能的因素进行了分析。以分析结果为基础,对低损耗193 nm反射膜的设计进行了探讨。结果表明:在空气侧的外膜层中电场强度较大,随着层数向内过渡,电场强度迅速减小;高折射率材料膜层的吸收损耗明显高于低折射率材料膜层的吸收损耗,而且靠近空气侧最外层的高折射率膜层的吸收损耗最大;按由外层向内层过渡的方向,吸收损耗迅速减小,减小的速度与高低折射率材料折射率的比值相关;表面散射损耗与两种材料的折射率比值成正比,但折射率比值减小后只能通过增加膜层数来获得一定的反射率,而这样又会使表面粗糙度增加,并且引入其它的损耗。因此,选择折射率差值适当大一些的材料对降低散射损耗是有利的。设计了27层膜堆的193 nm反射膜,设计反射率在98%以上。

Y2O3 stabilized ZrO2 thin films deposited by electron-beam evaporation: Optical properties, structure and residual stresses

This paper describes the preparation and the characterization Of Y2O3 stabilized ZrO2 thin films produced by electric-beam evaporation method. The optical properties, microstructure, surface morphology and the residual stress of the deposited films were investigated by optical spectroscopy, X-ray diffraction (XRD), scanning probe microscope and optical interferometer. It is shown that the optical transmission spectra of all the YSZ thin films are similar with those of ZrO2 thin film, possessing high transparency in the visible and near-infrared regions. The refractive index of the samples decreases with increasing of Y2O3 content. The crystalline structure of pure ZrO2 films is a mixture of tetragonal phase and monoclinic phase, however, Y2O3 stabilized ZrO2 thin films only exhibit the cubic phase independently of how much the added Y2O3 content is. The surface morphology spectrum indicates that all thin films present a crystalline columnar texture with columnar grains perpendicular to the substrate and with a predominantly open microporosity. The residual stress of films transforms tensile from compressive with the increasing Of Y2O3 molar content, which corresponds to the evolutions of the structure and packing densities. (C) 2008 Elsevier Ltd. All rights reserved.

Influence of ZrO2 in HfO2 on reflectance of HfO2/SiO2 multilayer at 248 nm prepared by electron-beam evaporation

Influence of ZrO2 in HfO2 on the reflectance of HfO2/SiO2 multilayer at 248 nm was investigated. Two kinds of HfO2 with different ZrO2 content were chosen as high refractive index material and the same kind of SiO2 as low refractive index material to prepare the mirrors by electron-beam evaporation. The impurities in two kinds of HfO2 starting coating materials and in their corresponding single layer thin films were determined through glow discharge mass spectrum (GDMS) technology and secondary ion mass spectrometry (SIMS) equipment, respectively. It showed that between the two kinds of HfO2, either the bulk materials or their corresponding films, the difference of ZrO2 was much larger than that of the other impurities such as Ti and Fe. It is the Zr element that affects the property of thin films. Both in theoretical and in experimental, the mirror prepared with the HfO2 starting material containing more Zr content has a lower reflectance. Because the extinction coefficient of zirconia is relatively high in UV region, it can be treated as one kind of absorbing defects to influence the optical property of the mirrors. (C) 2008 Elsevier B.V. All rights reserved.